DISCRETE SEMICONDUCTORS DATA SHEET BFQ270 NPN 6 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 6 GHz wideband transistor FEATURES BFQ270 PINNING • High power gain PIN DESCRIPTION • Emitter-ballasting resistors for good thermal stability 1 collector • Gold metallization ensures excellent reliability. 2 emitter 3 base 4 emitter page 4 3 1 DESCRIPTION Silicon NPN transistor mounted in a 4-lead dual-emitter SOT172A1. envelope with a ceramic cap. All leads are isolated from the mounting base. 2 Top view It is primarily intended for use in MATV and CATV amplifiers. MBC869 Fig.1 SOT172A1. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter − − 25 V VCEO collector-emitter voltage open base − − 19 V IC DC collector current − − 500 mA Ptot total power dissipation up to Tc = 100 °C − − 10 W hFE DC current gain IC = 240 mA; VCE = 18 V; Tj = 25 °C 60 − − fT transition frequency IC = 240 mA; VCE = 18 V; f = 1 GHz; Tamb = 25 °C − 6 − GHz GUM maximum unilateral power gain IC = 240 mA; VCE = 18 V; f = 800 MHz; Tamb = 25 °C − 10 − dB VO output voltage dim = −60 dB; IC = 240 mA; VCE = 18 V; RL = 75 Ω; f(p+q-r) = 793.25 MHz − 1.6 − V WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. September 1995 2 Philips Semiconductors Product specification NPN 6 GHz wideband transistor BFQ270 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 25 V VCEO collector-emitter voltage open base − 19 V VEBO emitter-base voltage open collector − 2 V IC DC collector current − 500 mA Ptot total power dissipation up to Tc = 100 °C − 10 W Tstg storage temperature −65 150 °C Tj junction temperature − 200 °C THERMAL RESISTANCE SYMBOL Rth j-c PARAMETER THERMAL RESISTANCE thermal resistance from junction to case 10 K/W CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = 18 V − − 100 µA hFE DC current gain IC = 240 mA; VCE = 18 V 60 110 − Cc collector capacitance IE = ie = 0; VCB = 18 V; f = 1 MHz − 3.6 − pF Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz − 11 − pF Cre feedback capacitance IC = 0; VCB = 18 V; f = 1 MHz 2 2.6 − pF Ccs collector-stud capacitance − 1.2 − pF fT transition frequency IC = 240 mA; VCE = 18 V; f = 1 GHz; Tamb = 25 °C 4.5 6 − GHz GUM maximum unilateral power gain (note 1) IC = 240 mA; VCE = 18 V; f = 500 MHz; Tamb = 25 °C − 16 − dB IC = 240 mA; VCE = 18 V; f = 1 GHz; Tamb = 25 °C − 10 − dB VO output voltage note 2 − 1.6 − V d2 second order intermodulation distortion note 3 − −50 − dB Notes 2 S 21 - dB˙ 1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log ------------------------------------------------------------2 2 1 1 – S – S 11 22 2. dim = −60 dB (DIN 45004); IC = 240 mA; VCE = 18 V; RL = 75 Ω; Vp = VO; fp = 795.25 MHz; Vq = VO −6 dB; fq = 803.25 MHz; Vr = VO −6 dB; fr = 805.25 MHz; measured at f(p+q−r) = 793.25 MHz. 3. IC = 240 mA; VCE = 18 V; RL = 75 Ω; Vp = Vq = VO = 50.5 dBmV = 335 mV; f(p+q) = 810 MHz; fp = 250 MHz; fq = 560 MHz. September 1995 3 Philips Semiconductors Product specification , ,,,,, NPN 6 GHz wideband transistor handbook, full pagewidth V bias BFQ270 VCC (1) L1 C4 R5 C8 C7 L3 R6 L1 input n–75 Ω C2 C9 L2 L4 L5 C5 L2 L6 output n–75 Ω C6 DUT C3 C1 R1 R2 R3 R4 MBB488 (1) +Vc is equivalent to VCE = Vc − Ic (A) × 17. Fig.2 Intermodulation and second order intermodulation distortion test circuit. List of components (see test circuit) DESIGNATION DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1 miniature ceramic plate capacitor 0.82 pF 2222 680 03827 C2, C5, C7, C8 multilayer ceramic capacitor 10 nF 2222 852 47103 C3 multilayer ceramic chip capacitor 2.2 pF 2222 855 12228 C4 (note 1) miniature ceramic plate capacitor 1 nF 2222 630 08102 C6 miniature ceramic plate capacitor 1.2 pF 2222 680 03128 C9 electrolytic capacitor 4.7 µF 2222 014 28478 L1 (note 1) 4.5 turns loosely wound 0.4 mm enamelled copper wire ≈35 nH L2 Ferroxcube choke 5 µH ML1, ML6 microstripline 75 Ω width 2.46 mm; length 9 mm ML2, ML5 microstripline 75 Ω width 2.46 mm; length 22 mm ML3, ML4 microstripline 145 Ω width 0.5 mm; length 12 mm R1, R2, R3, R4 metal film resistor 68 Ω type MR25 2322 151 76819 R5 (note 1) metal film resistor 240 Ω type SFR16T 2322 180 73241 R6 metal film resistor 10 kΩ type SFR16T 2322 180 73103 internal coil diameter 2 mm 3122 108 20153 Note 1. Components C4, L1, and R5 are mounted in a cavity in the brass ground plate. The circuit is constructed on a printed circuit board and 10 mm thick brass ground plate, with a relative dielectric constant of (εr = 2.2), thickness 1.57 mm; thickness of copper 0.017 mm (E.G. Rogers’ RT/Duroid 5880). September 1995 4 Philips Semiconductors Product specification NPN 6 GHz wideband transistor BFQ270 VCC Vbias C9 C7 R5 R3 R6 C8 L1 R4 L2 C4 input n–75 Ω L3 L1 L4 L2 C2 C1 L6 L5 C3 C5 C6 output n–75 Ω R2 R1 MBB487 80 mm handbook, full pagewidth copper straps 70 mm mounting screw (4 x M2.5) MBB486 Fig.3 Intermodulation test circuit printed circuit board. September 1995 5 Philips Semiconductors Product specification NPN 6 GHz wideband transistor BFQ270 MRA747 14 MRA746 150 handbook, halfpage handbook, halfpage Ptot hFE (W) 12 100 8 50 4 0 0 0 50 100 0 150 200 Tcase (oC) 100 200 300 400 500 IC (mA) VCE = 18 V; Tj = 25 °C. Fig.4 Power derating curve. Fig.5 MRA736 5 DC current gain as a function of collector current. MRA741 8 handbook, halfpage handbook, halfpage Cre (pF) fT (GHz) 4 VCE = 18 V 6 3 12 V 4 2 2 1 0 0 4 0 8 12 0 16 20 VCB (V) 100 ic = 0; f = 1 MHz. f = 1 GHz; Tamb = 25 °C. Fig.6 Fig.7 Feedback capacitance as a function of collector-base voltage. September 1995 6 200 300 400 500 IC (mA) Transition frequency as a function of collector current. Philips Semiconductors Product specification NPN 6 GHz wideband transistor BFQ270 MRA743 25 MRA745 25 handbook, halfpage handbook, halfpage gain (dB) gain (dB) 20 20 Gmax 15 GUM GUM 10 500 MHz GUM 500 MHz GUM 15 Gmax MSG 10 1 GHz Gmax 5 1 GHz Gmax 5 0 0 0 200 400 IC (mA) 600 0 200 400 Fig.8 Gain as a function of collector current. Fig.9 Gain as a function of collector current. MRA744 MRA742 50 50 handbook, halfpage handbook, halfpage gain (dB) gain (dB) 40 40 GUM 30 30 GUM MSG MSG 20 20 10 10 Gmax Gmax 10−1 1 f (GHz) 0 10−2 10 Ic = 240 mA; VCE = 12 V. 10−1 1 f (GHz) 10 Ic = 240 mA; VCE = 18 V. Fig.10 Gain as a function of frequency. September 1995 600 VCE = 18 V. VCE = 12 V. 0 10−2 IC (mA) Fig.11 Gain as a function of frequency. 7 Philips Semiconductors Product specification NPN 6 GHz wideband transistor BFQ270 MRA739 −30 MRA740 −30 handbook, halfpage handbook, halfpage dim (dB) dim (dB) −40 −40 −50 −50 −60 −60 −70 −70 75 125 175 225 IC (mA) 275 75 125 175 225 IC (mA) 275 3-tone dim; (VCE = 18 V); fp = 445.25 MHz; Vo = 65.11 dBmV (1.8 V); fq = 453.25 MHz; Vo = 59.11 dBmV; fr = 455.25 MHz; Vo = 59.11 dBmV; f(p+q-r) = 443.25 MHz. 3-tone dim; (VCE = 18 V); fp = 795.25 MHz; Vo = 64.08 dBmV (1.6 V); fq = 803.25 MHz; Vo = 58.08 dBmV; fr = 805.25 MHz; Vo = 58.08 dBmV; f(p+q-r) = 793.25 MHz. Fig.12 Intermodulation distortion as a function of collector current. Fig.13 Intermodulation distortion as a function of collector current. MRA738 −30 d2 handbook, halfpage (dB) (dB) −40 −40 −50 −50 −60 −60 −70 −70 −80 75 125 175 225 MRA737 −30 d2 handbook, halfpage −80 75 275 325 IC (mA) 125 175 225 275 325 IC (mA) VCE = 18 V; fp = 50 MHz; Vo = 50.5 dBmV (0.335 V); fq = 400 MHz; Vo = 50.5 dBmV; f(p+q) = 450 MHz. VCE = 18 V; fp = 250 MHz; Vo = 50.5 dBmV (0.335 V); fq = 560 MHz; Vo = 50.5 dBmV; f(p+q) = 810 MHz. Fig.14 Second order intermodulation distortion as a function of collector current. Fig.15 Second order intermodulation distortion as a function of collector current. September 1995 8 Philips Semiconductors Product specification NPN 6 GHz wideband transistor BFQ270 1 handbook, full pagewidth 0.5 2 3 GHz 0.2 5 10 +j 0.2 0 0.5 1 2 5 10 ∞ –j 10 5 0.2 40 MHz 2 0.5 MBB484 1 Ic = 240 mA; VCE = 18 V. Zo = 50 Ω. Fig.16 Common emitter input reflection coefficient (S11). 90° handbook, full pagewidth 120° 60° 40 MHz 150° 30° +ϕ 180° 50 40 30 20 10 0° 3 GHz −ϕ 30° 150° 60° 120° 90° MBB482 Ic = 240 mA; VCE = 18 V. Fig.17 Common emitter forward transmission coefficient (S21). September 1995 9 Philips Semiconductors Product specification NPN 6 GHz wideband transistor BFQ270 90° handbook, full pagewidth 120° 60° 150° 30° 3 GHz +ϕ 0.5 180° 0.4 0.3 0.2 0.1 0° 40 MHz −ϕ 30° 150° 60° 120° MBB483 90° Ic = 240 mA; VCE = 18 V. Fig.18 Common emitter reverse transmission coefficient (S12). 1 handbook, full pagewidth 0.5 2 3 GHz 0.2 5 10 +j 0 0.2 0.5 1 2 5 10 ∞ –j 10 5 0.2 40 MHz 2 0.5 1 MBB485 Ic = 240 mA; VCE = 18 V. Zo = 50 Ω. Fig.19 Common emitter output reflection coefficient (S22). September 1995 10 Philips Semiconductors Product specification NPN 6 GHz wideband transistor BFQ270 PACKAGE OUTLINE Studded ceramic package; 4 leads SOT172A1 D A Q c A D1 N2 N M W w1 M A D2 N3 M1 X detail X H b 4 b1 H 1 3 2 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b b1 c D D1 D2 H M M1 N N2 N3 Q mm 5.31 4.34 3.31 3.04 0.89 0.63 0.16 0.10 5.20 4.95 5.33 5.08 5.33 5.08 26.17 24.63 3.05 2.79 1.66 1.39 11.82 10.89 8.89 6.90 3.69 2.92 2.90 2.31 0.209 0.171 0.130 0.120 0.035 0.006 0.025 0.004 0.205 0.210 0.210 0.195 0.200 0.200 1.03 0.97 0.12 0.11 0.065 0.465 0.350 0.055 0.429 0.272 0.145 0.115 0.114 0.091 inches OUTLINE VERSION REFERENCES IEC JEDEC EIAJ w1 0.38 8-32 UNC EUROPEAN PROJECTION 0.015 ISSUE DATE 97-06-28 SOT172A1 September 1995 W 11 Philips Semiconductors Product specification NPN 6 GHz wideband transistor BFQ270 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1995 12