DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BFQ251 PNP video transistor Product specification Supersedes data of 1997 Oct 02 1998 Oct 06 Philips Semiconductors Product specification PNP video transistor BFQ251 FEATURES DESCRIPTION • High breakdown voltages PNP video transistor in a SOT54 (TO-92) plastic package. NPN complement: BFQ231. • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability. 1 page 2 3 PINNING MSB033 PIN DESCRIPTION 1 base APPLICATIONS 2 collector • Buffer/driver in high-resolution colour graphics monitors. 3 emitter Fig.1 Simplified outline (SOT54; TO-92). QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter − − −100 V VCER collector-emitter voltage RBE = 100 Ω − − −95 V IC collector current (DC) − − −300 mA Ptot total power dissipation Ts ≤ 65 °C; note 1 − − 1 W hFE DC current gain IC = −50 mA; VCE = −10 V 20 fT transition frequency IC = −50 mA; VCE = −10 V; Tamb = 25 °C 1 30 − 1.3 − GHz Note 1. Ts is the temperature at the soldering point of the collector pin, 4 mm from the body. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −100 V VCEO collector-emitter voltage open base − −65 V VCER collector-emitter voltage RBE = 100 Ω − −95 V VEBO emitter-base voltage open collector − −3 V IC collector current (DC) − −300 mA Ptot total power dissipation − 1 W Tstg storage temperature Ts ≤ 65 °C; notes 1 and 2; see Fig.3 −65 +150 °C Tj junction temperature − 150 °C Notes 1. Ts is the temperature at the soldering point of the collector pin, 4 mm from the body. 2. Transistor mounted on a printed-circuit board with a metallized pad area of 10 mm2. 1998 Oct 06 2 Philips Semiconductors Product specification PNP video transistor BFQ251 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-s thermal resistance from junction to soldering point Rth j-a thermal resistance from junction to ambient VALUE note 1 UNIT 85 K/W 185 K/W Note 1. Ts is the temperature at the soldering point of the collector pin, 4 mm from the body. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS IC = −0.1 mA; IE = 0 MIN. TYP. MAX. UNIT V(BR)CBO collector-base breakdown voltage −100 − − V V(BR)CEO collector-emitter breakdown voltage IC = −10 mA; IB = 0 −65 − − V V(BR)CER collector-emitter breakdown voltage IC = −10 mA; RBE = 100 Ω −95 − − V V(BR)EBO emitter-base breakdown voltage IE = −0.1 mA; IC = 0 −3 − − V ICES collector-emitter cut-off current IB = 0; VCE = −50 V − − −100 µA ICBO collector-base cut-off current IE = 0; VCB = −50 V − − −20 µA hFE DC current gain IC = −50 mA; VCE = −10 V; see Fig.4 20 30 − Ccb collector-base capacitance IC = ic = 0; VCB = −10 V; f = 1 MHz; see Fig.5 − 2 − pF fT transition frequency IC = −50; VCE = −10 V; see Fig.6 1 1.3 − GHz MEA228 - 1 MEA232 - 1 −400 handbook, halfpage handbook,1.2 halfpage Ptot (W) 1.0 IC (mA) −300 0.8 −200 0.6 0.4 −100 0.2 0 0 −20 −40 −60 0 −80 −100 VCEO (V) 0 50 100 150 Ts (oC) Tamb = 25 °C. Fig.2 DC SOAR. 1998 Oct 06 Fig.3 Power derating curve. 3 200 Philips Semiconductors Product specification PNP video transistor BFQ251 MEA231 MEA229 6 handbook, halfpage handbook,40 halfpage hFE Ccb (pF) 30 4 20 2 10 0 −100 0 −200 IC (mA) 0 −300 VCE = −10 V; Tamb = 25 °C. Fig.4 Fig.5 MBK897 handbook, halfpage fr (GHz) 1 0.5 0 0 −50 −100 I (mA) C −150 VCE = −10 V; Tamb = 25 °C. Fig.6 1998 Oct 06 −10 −20 −30 −40 VCB (V) f = 1 MHz; Tamb = 25 °C. DC current gain as a function of collector current; typical values. 1.5 0 Transition frequency as a function of collector current; typical values. 4 Collector-base capacitance as a function of collector-base voltage; typical values. Philips Semiconductors Product specification PNP video transistor BFQ251 PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 D e 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E e e1 L L1(1) mm 5.2 5.0 0.48 0.40 0.66 0.56 0.45 0.40 4.8 4.4 1.7 1.4 4.2 3.6 2.54 1.27 14.5 12.7 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 1998 Oct 06 REFERENCES IEC JEDEC EIAJ TO-92 SC-43 5 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification PNP video transistor BFQ251 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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