Order this document by MMBR5179LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line ! Designed for small–signal amplification at frequencies to 500 MHz. Specifically packaged for use in thick and thin–film circuits using surface mount components. • High Gain — Gpe = 15 dB Typ @ f = 200 MHz • Low Noise — NF = 4.5 dB Typ @ f = 200 MHz RF AMPLIFIER TRANSISTOR NPN SILICON • Available in tape and reel packaging options: T1 suffix = 3,000 units per reel MAXIMUM RATINGS Rating Symbol Value Unit VCEO VCBO 15 Vdc 30 Vdc VEBO IC 3.0 Vdc 50 mAdc TJmax PD(max) 150 °C 0.375 5.00 W mW/°C Symbol Max Unit Tstg RθJC – 55 to +150 °C 200 °C/W Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Maximum Junction Temperature Power Dissipation, Tcase = 75°C (1) Derate linearly above Tcase = 75°C @ THERMAL CHARACTERISTICS Characteristic Storage Temperature Thermal Resistance Junction to Case CASE 318–08, STYLE 6 SOT–23 LOW PROFILE (TO–236AA/AB) DEVICE MARKING MMBR5179LT1 = 7H ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 3.0 mAdc, IB = 0) V(BR)CEO 15 — — Vdc Collector–Base Breakdown Voltage (IC = 0.001 mAdc, IE = 0) V(BR)CBO 30 — — Vdc Emitter–Base Breakdown Voltage (IE = 0.01 mAdc, IC = 0) V(BR)EBO 3.0 — — Vdc ICBO — — 0.02 µAdc hFE 30 — 250 — Collector–Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) VCE(sat) — — 0.4 Vdc Base–Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) VBE(sat) — — 1.0 Vdc fT — 1,400 — MHz Collector–Base Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 to 1.0 MHz) Ccb — — 1.0 pF 50 ohm Noise Figure (IC = 1.5 mAdc, VCE = 6.0 Vdc, RS = 50 Ω, f = 200 MHz) NF — 4.5 — dB — 15 — dB OFF CHARACTERISTICS Collector Cutoff Current (VCB = 15 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (IC = 3.0 mAdc, VCE = 1.0 Vdc) SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 100 MHz) Common–Emitter Amplifier Power Gain Gpe (VCE = 6.0 Vdc, IC = 5.0 mAdc, f = 200 MHz) NOTE: 1.Case temperature measured on collector lead immediately adjacent to body of package. REV 8 RF DEVICE DATA MOTOROLA Motorola, Inc. 1997 MMBR5179LT1 1 PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. A L 3 B S 1 V DIM A B C D G H J K L S V 2 G C H D J K INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR CASE 318–08 ISSUE AF Motorola reserves the right to make changes without further notice to any products herein. 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