ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S 15A, 600V Stealth™ Diode General Description Features • Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 1.2 The ISL9R1560G2, ISL9R1560P2, ISL9R1560S2 and ISL9R1560S3S are Stealth™ diodes optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current (IRM(REC)) and exceptionally soft recovery under typical operating conditions. • Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . trr < 30ns • Operating Temperature . . . . . . . . . . . . . . . . . . . . 175oC • Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V • Avalanche Energy Rated This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRM(REC) and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the Stealth™ diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost. Applications • Switch Mode Power Supplies • Hard Switched PFC Boost Diode • UPS Free Wheeling Diode • Motor Drive FWD • SMPS FWD • Snubber Diode Formerly developmental type TA49410. Package Symbol JEDEC TO-220AC JEDEC STYLE TO-247 ANODE K CATHODE CATHODE (BOTTOM SIDE METAL) ANODE CATHODE CATHODE (FLANGE) A JEDEC STYLE TO-262 JEDEC TO-263AB ANODE CATHODE CATHODE (FLANGE) CATHODE (FLANGE) N/C ANODE Device Maximum Ratings TC = 25°C unless otherwise noted Symbol VRRM Parameter Repetitive Peak Reverse Voltage Ratings 600 Units V Working Peak Reverse Voltage 600 V DC Blocking Voltage 600 V IF(AV) Average Rectified Forward Current (TC = 145oC) 15 A IFRM Repetitive Peak Surge Current (20kHz Square Wave) 30 A IFSM Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) 200 A VRWM VR ©2002 Fairchild Semiconductor Corporation ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S Rev. C1 ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S November 2002 EAVL TJ, TSTG TL TPKG Parameter Power Dissipation Avalanche Energy (1A, 40mH) Operating and Storage Temperature Range Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Techbrief TB334 Ratings 150 Units W 20 mJ -55 to 175 °C 300 260 °C °C CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Package Marking and Ordering Information Device Marking R1560G2 Device ISL9R1560G2 Package TO-247 Tape Width N/A Quantity 30 R1560P2 ISL9R1560P2 TO-220AC N/A 50 R1560S2 ISL9R1560S2 TO-262 N/A 50 R1560S3S ISL9R1560S3S TO-263AB 24mm 800 Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off State Characteristics IR Instantaneous Reverse Current VR = 600V TC = 25°C - - 100 µA TC = 125°C - - 1.0 mA TC = 25°C - 1.8 2.2 V TC = 125°C - 1.65 2.0 V - 62 - pF On State Characteristics VF Instantaneous Forward Voltage IF = 15A Dynamic Characteristics CJ Junction Capacitance VR = 10V, IF = 0A Switching Characteristics trr trr IRM(REC) QRR Reverse Recovery Time Reverse Recovery Time Maximum Reverse Recovery Current Reverse Recovered Charge trr Reverse Recovery Time S Softness Factor (tb/ta) IRM(REC) QRR Maximum Reverse Recovery Current Reverse Recovered Charge trr Reverse Recovery Time S Softness Factor (tb/ta) IRM(REC) QRR dIM/dt Maximum Reverse Recovery Current Reverse Recovered Charge IF = 1A, dIF/dt = 100A/µs, VR = 30V - 25 30 ns IF = 15A, dIF/dt = 100A/µs, VR = 30V - 35 40 ns IF = 15A, dIF/dt = 200A/µs, VR = 390V, TC = 25°C - 29.4 - ns - 3.5 - A - 57 - nC ns IF = 15A, dIF/dt = 200A/µs, VR = 390V, TC = 125°C - 90 - - 2.0 - - 5.0 - A - 275 - nC IF = 15A, dIF/dt = 800A/µs, VR = 390V, TC = 125°C - 52 - ns - 1.36 - - 13.5 - A - 390 - nC - 800 - A/µs Maximum di/dt during tb Thermal Characteristics RθJC Thermal Resistance Junction to Case - - 1.0 °C/W RθJA Thermal Resistance Junction to Ambient TO-247 - - 30 °C/W RθJA Thermal Resistance Junction to Ambient TO-220 - - 62 °C/W RθJA Thermal Resistance Junction to Ambient TO-262 - - 62 °C/W RθJA Thermal Resistance Junction to Ambient TO-263 - - 62 °C/W ©2002 Fairchild Semiconductor Corporation ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S Rev. C1 ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S Symbol PD 4000 30 175oC 1000 IR, REVERSE CURRENT (µA) IF, FORWARD CURRENT (A) 25 175oC 150oC 20 25oC 125oC 15 100oC 10 150oC 125oC 100 100oC 75oC 10 1 5 25oC 0 0.5 0.75 1.0 1.25 1.5 1.75 2.0 0.1 100 2.25 200 VF, FORWARD VOLTAGE (V) Figure 1. Forward Current vs Forward Voltage 500 600 100 VR = 390V, TJ = 125°C 80 VR = 390V, TJ = 125°C tb AT IF = 30A, 15A, 7.5A 80 tb AT dIF/dt = 200A/µs, 500A/µs, 800A/µs t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) 400 Figure 2. Reverse Current vs Reverse Voltage 100 60 40 20 60 40 20 ta AT dIF/dt = 200A/µs, 500A/µs, 800A/µs ta AT IF = 30A, 15A, 7.5A 0 0 5 10 15 20 25 0 200 30 IF, FORWARD CURRENT (A) dIF/dt = 800A/µs 14 12 dIF/dt = 500A/µs 10 8 dIF/dt = 200A/µs 6 4 2 0 5 10 15 20 25 30 IF, FORWARD CURRENT (A) Figure 5. Maximum Reverse Recovery Current vs Forward Current ©2002 Fairchild Semiconductor Corporation 600 800 1000 1200 1400 1600 Figure 4. ta and tb Curves vs dIF/dt IRM(REC) , MAX REVERSE RECOVERY CURRENT (A) 16 VR = 390V, TJ = 125°C 400 dIF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 3. ta and tb Curves vs Forward Current IRM(REC) , MAX REVERSE RECOVERY CURRENT (A) 300 VR , REVERSE VOLTAGE (V) 25 VR = 390V, TJ = 125°C IF = 30A 20 IF = 15A 15 IF = 7.5A 10 5 0 200 400 600 800 1000 1200 1400 1600 dIF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 6. Maximum Reverse Recovery Current vs dIF/dt ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S Rev. C1 ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S Typical Performance Curves QRR, REVERSE RECOVERED CHARGE (nC) S, REVERSE RECOVERY SOFTNESS FACTOR 700 2.5 VR = 390V, TJ = 125°C IF = 30A 2.0 IF = 15A 1.5 IF = 7.5A 1.0 0.5 200 400 600 800 1000 1200 1400 VR = 390V, TJ = 125°C IF = 30A 600 500 IF = 15A 400 IF = 7.5A 300 200 200 1600 dIF /dt, CURRENT RATE OF CHANGE (A/µs) 1000 1200 1400 1600 IF(AV), AVERAGE FORWARD CURRENT (A) 16 1000 800 600 400 200 0 0.1 1 10 12 10 8 6 4 2 0 140 145 150 155 160 165 170 175 TC, CASE TEMPERATURE (oC) Figure 9. Junction Capacitance vs Reverse Voltage 1.0 14 100 VR , REVERSE VOLTAGE (V) THERMAL IMPEDANCE 800 Figure 8. Reverse Recovered Charge vs dIF/dt 1200 CJ , JUNCTION CAPACITANCE (pF) 600 dIF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 7. Reverse Recovery Softness Factor vs dIF/dt ZθJA, NORMALIZED 400 Figure 10. DC Current Derating Curve DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 SINGLE PULSE PEAK TJ = PDM x ZθJA x RθJA + TA 0.01 10-5 10-4 10-3 10-2 10-1 t, RECTANGULAR PULSE DURATION (s) 100 101 Figure 11. Normalized Maximum Transient Thermal Impedance ©2002 Fairchild Semiconductor Corporation ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S Rev. C1 ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S Typical Performance Curves (Continued) VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L IF DUT RG CURRENT SENSE dIF trr dt ta tb 0 + VGE - MOSFET t1 0.25 IRM VDD IRM t2 Figure 12. trr Test Circuit Figure 13. trr Waveforms and Definitions I = 1A L = 40mH R < 0.1Ω VDD = 50V EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L CURRENT SENSE VAVL R + VDD Q1 VDD DUT IL t0 Figure 14. Avalanche Energy Test Circuit ©2002 Fairchild Semiconductor Corporation IL I V t1 t2 t Figure 15. Avalanche Current and Voltage Waveforms ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S Rev. C1 ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S Test Circuit and Waveforms Typical Performance Curves (Continued) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx FACT ActiveArray FACT Quiet Series Bottomless FASTâ CoolFET FASTr CROSSVOLT FRFET DOME GlobalOptoisolator EcoSPARK GTO E2CMOSTM HiSeC EnSignaTM I2C Across the board. Around the world. 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Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I1