PHILIPS PH2625L

PH2625L
N-channel TrenchMOS™ logic level FET
Rev. 02 — 24 February 2005
Preliminary data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS™ technology.
1.2 Features
■ Optimized for use in DC-to-DC
converters
■ Low threshold voltage
■ Very low switching and conduction
losses
■ Low thermal resistance.
1.3 Applications
■ DC-to-DC converters
■ Voltage regulators
■ Switched-mode power supplies
■ Notebook computers.
1.4 Quick reference data
■ VDS ≤ 25 V
■ Qgd = 7.3 nC (typ)
■ RDSon ≤ 2.8 mΩ (VGS = 10 V)
■ ID ≤ 100 A
■ Qg(tot) = 32 nC (typ)
■ RDSon ≤ 4.1 mΩ (VGS = 4.5 V).
2. Pinning information
Table 1:
Pin
Pinning
Description
1, 2, 3
source
4
gate
mb
mounting base; connected to drain
Simplified outline
Symbol
D
mb
G
mbb076
1 2 3 4
SOT669 (LFPAK)
S
PH2625L
Philips Semiconductors
N-channel TrenchMOS™ logic level FET
3. Ordering information
Table 2:
Ordering information
Type number
PH2625L
Package
Name
Description
Version
LFPAK
plastic single-ended surface mounted package; 4 leads
SOT669
4. Limiting values
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions
Min
Max
Unit
VDS
Symbol Parameter
drain-source voltage (DC)
25 °C ≤ Tj ≤ 150 °C
-
25
V
VDGR
drain-gate voltage (DC)
25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ
-
25
V
VGS
gate-source voltage
-
±20
V
ID
drain current (DC)
Tmb = 25 °C; VGS = 10 V; Figure 2 and 3
-
100
A
Tmb = 100 °C; VGS = 10 V; Figure 2
-
63
A
IDM
peak drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3
-
300
A
Ptot
total power dissipation
Tmb = 25 °C; Figure 1
-
62.5
W
Tstg
storage temperature
−55
+150
°C
Tj
junction temperature
−55
+150
°C
-
52
A
Tmb = 25 °C; pulsed; tp ≤ 10 µs
-
156
A
EDS(AL)S non-repetitive drain-source
avalanche energy
unclamped inductive load; ID = 71 A;
tp = 0.1 ms; VDD ≤ 25 V; RGS = 50 Ω;
VGS = 10 V; starting at Tj = 25 °C
-
250
mJ
EDS(AL)R repetitive drain-source avalanche
energy
unclamped inductive load; ID = 7.1 A;
tp = 0.01 ms; VDD ≤ 25 V; RGS = 50 Ω;
VGS = 10 V
-
2.5
mJ
Source-drain diode
IS
source (diode forward) current (DC) Tmb = 25 °C
ISM
peak source (diode forward)
current
Avalanche ruggedness
[1] [2]
[1]
Duty cycle is limited by the maximum junction temperature.
[2]
Repetitive avalanche failure is not determined simply by thermal effects. Repetitive avalanche transients should only be applied for short
bursts, not every switching cycle.
9397 750 14324
Preliminary data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 02 — 24 February 2005
2 of 13
PH2625L
Philips Semiconductors
N-channel TrenchMOS™ logic level FET
03aa15
120
03aa23
120
Pder
Ider
(%)
(%)
80
80
40
40
0
0
0
50
100
50
0
200
150
100
150
Tmb (°C)
P tot
P der = ------------------------ × 100 %
P
°
200
Tmb (°C)
ID
I der = --------------------- × 100 %
I
°
tot ( 25 C )
D ( 25 C )
Fig 1. Normalized total power dissipation as a
function of mounting base temperature
Fig 2. Normalized continuous drain current as a
function of mounting base temperature
003aaa551
103
ID
(A)
Limit RDSon = VDS / ID
102
tp = 10 µs
100 µs
DC
1 ms
10
10 ms
100 ms
1
10-1
1
10
VDS (V)
102
Tmb = 25 °C; IDM is single pulse; VGS = 10 V
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
9397 750 14324
Preliminary data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 02 — 24 February 2005
3 of 13
PH2625L
Philips Semiconductors
N-channel TrenchMOS™ logic level FET
5. Thermal characteristics
Table 4:
Thermal characteristics
Symbol Parameter
Rth(j-mb)
Conditions
thermal resistance from junction to mounting base Figure 4
Min
Typ
Max
Unit
-
-
2
K/W
003aaa552
10
Zth(j-mb)
(K/W)
1
δ = 0.5
0.2
0.1
0.05
0.02
δ=
P
single pulse
10-1
tp
T
t
tp
T
10-2
10-5
10-4
10-3
10-2
10-1
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
9397 750 14324
Preliminary data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 02 — 24 February 2005
4 of 13
PH2625L
Philips Semiconductors
N-channel TrenchMOS™ logic level FET
6. Characteristics
Table 5:
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
25
-
-
V
Tj = 25 °C
1
1.5
2
V
Tj = 150 °C
0.5
-
-
V
Tj = −55 °C
-
-
2.2
V
Tj = 25 °C
-
0.06
1
µA
Tj = 150 °C
-
-
500
µA
Static characteristics
V(BR)DSS
drain-source breakdown voltage
ID = 250 µA; VGS = 0 V
VGS(th)
gate-source threshold voltage
ID = 1 mA; VDS = VGS; Figure 9 and 10
IDSS
drain-source leakage current
VDS = 25 V; VGS = 0 V
RG
gate resistance
f = 1 MHz
-
1.5
-
Ω
IGSS
gate-source leakage current
VGS = ±16 V; VDS = 0 V
-
10
100
nA
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 25 A; Figure 6 and 8
Tj = 25 °C
-
2
2.8
mΩ
Tj = 150 °C
-
3.2
4.3
mΩ
Tj = 25 °C
-
3
4.1
mΩ
Tj = 150 °C
-
4.8
6.6
mΩ
-
32
-
nC
-
9.6
-
nC
VGS = 4.5 V; ID = 25 A; Figure 6 and 8
Dynamic characteristics
Qg(tot)
total gate charge
ID = 25 A; VDS = 12 V; VGS = 4.5 V;
Figure 11 and 12
Qgs
gate-source charge
Qgs1
pre-VGS(th) gate-source charge
-
6
-
nC
Qgs2
post-VGS(th) gate-source charge
-
3.6
-
nC
Qgd
gate-drain (Miller) charge
-
7.3
-
nC
Vplat
plateau voltage
-
2.2
-
V
Qg(tot)
total gate charge
ID = 0 A; VDS = 0 V; VGS = 4.5 V
-
26
-
nC
VGS = 0 V; VDS = 12 V; f = 1 MHz;
Figure 13 and 14
-
4308 -
pF
-
1137 -
pF
-
439
-
pF
4830 -
pF
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer capacitance
Ciss
input capacitance
VGS = 0 V; VDS = 0 V; f = 1 MHz
-
VDS = 12 V; RL = 0.48 Ω; VGS = 4.5 V;
RG = 4.7 Ω
-
41
-
ns
-
52
-
ns
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
-
67
-
ns
tf
fall time
-
30
-
ns
-
0.85
1.2
V
-
47
-
ns
-
22
-
nC
Source-drain diode
VSD
source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 15
trr
reverse recovery time
Qr
recovered charge
IS = 20 A; dIS/dt = −100 A/µs; VGS = 0 V;
VR = 25 V
9397 750 14324
Preliminary data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 02 — 24 February 2005
5 of 13
PH2625L
Philips Semiconductors
N-channel TrenchMOS™ logic level FET
40
003aaa553
10
4.5
003aaa555
20
2.4
2.5
ID
(A)
RDSon
(mΩ)
15
VGS (V) = 2.3
30
2.1
VGS (V) = 2
2.2
2.2
2.3
10
20
2.1
1.9
10
5
4.5
1.8
10
1.7
0
0
0
1
0.5
1.5
VDS (V)
0
2
Tj = 25 °C
10
20
30
ID (A)
40
Tj = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6. Drain-source on-state resistance as a function
of drain current; typical values
ID
03af18
2
003aaa554
40
a
(A)
1.5
30
Tj = 150 °C
25 °C
1
20
0.5
10
0
0
1
2
VGS (V)
3
Tj = 25 °C and 150 °C; VDS > ID × RDSon
0
-60
0
120
Tj (°C)
180
R DSon
a = ----------------------------R DSon ( 25 °C )
Fig 7. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature
9397 750 14324
Preliminary data sheet
60
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 02 — 24 February 2005
6 of 13
PH2625L
Philips Semiconductors
N-channel TrenchMOS™ logic level FET
03aa33
2.5
VGS(th)
(V)
2
1.5
03aa36
10-1
ID
(A)
max
10-2
typ
10-3
min
max
10-4
min
1
typ
10-5
0.5
0
-60
10-6
0
60
120
180
Tj (°C)
0
1
2
VGS (V)
3
Tj = 25 °C; VDS = 5 V
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
003aaa558
10
VGS
(V)
VDS (V) = 4.5
12
19
8
VDS
ID
6
Vplat
4
VGS(th)
VGS
2
Qgs1
Qgs2
Qgs
0
0
20
40
60
QG (nC)
80
Qgd
Qg(tot)
003aaa508
ID = 25 A; VDS = 4.5 V, 12 V and 19 V
Fig 11. Gate-source voltage as a function of gate
charge; typical values
Fig 12. Gate charge waveform definitions
9397 750 14324
Preliminary data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 02 — 24 February 2005
7 of 13
PH2625L
Philips Semiconductors
N-channel TrenchMOS™ logic level FET
003aaa556
104
003aaa632
8000
C
C
(pF)
Ciss
(pF)
Ciss
6000
103
4000
Coss
Crss
Crss
102
10-1
1
2000
0
102
10
0
2
4
6
8
10
VGS (V)
VDS (V)
VGS = 0 V; f = 1 MHz
VDS = 0 V; f = 1 MHz
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Fig 14. Input and reverse transfer capacitances as a
function of gate-source voltage; typical values
003aaa557
40
IS
(A)
30
Tj = 150 °C
25 °C
20
10
0
0.2
0.4
0.6
0.8
VSD (V)
1
Tj = 25 °C and 150 °C; VGS = 0 V
Fig 15. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
9397 750 14324
Preliminary data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 02 — 24 February 2005
8 of 13
PH2625L
Philips Semiconductors
N-channel TrenchMOS™ logic level FET
7. Package outline
Plastic single-ended surface mounted package (LFPAK); 4 leads
A2
A
E
SOT669
C
c2
b2
E1
b3
L1
mounting
base
b4
D1
D
H
L2
1
2
3
e
4
w M A
b
X
c
1/2 e
A
(A 3)
A1
C
θ
L
detail X
y C
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
A2
A3
b
b2
1.20 0.15 1.10
0.50 4.41
0.25
1.01 0.00 0.95
0.35 3.62
mm
b3
b4
2.2
2.0
0.9
0.7
c
D (1)
c2
D1(1)
E(1) E1(1)
max
0.25 0.30 4.10
4.20
0.19 0.24 3.80
5.0
4.8
3.3
3.1
e
H
L
L1
L2
w
y
θ
1.27
6.2
5.8
0.85
0.40
1.3
0.8
1.3
0.8
0.25
0.1
8°
0°
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
OUTLINE
VERSION
SOT669
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
03-09-15
04-10-13
MO-235
Fig 16. Package outline SOT669 (LFPAK)
9397 750 14324
Preliminary data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 02 — 24 February 2005
9 of 13
PH2625L
Philips Semiconductors
N-channel TrenchMOS™ logic level FET
8. Soldering
5.70
4.70
solder lands
4.60
0.075
3.70
solder resist
2.50
occupied area
2.00
0.90 (3×)
solder paste
0.25 (2×)
0.25
(2×)
2.00
2.05
3.45 3.50
3.68
3.30
3.48
2.50
0.60 (3×)
0.85
1.10
2.15
MSD864
1.27
3.81
0.70 (4×)
0.05 around (4×)
All dimensions in mm
Fig 17. Optimized soldering footprint SOT669 (LFPAK)
9397 750 14324
Preliminary data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 02 — 24 February 2005
10 of 13
PH2625L
Philips Semiconductors
N-channel TrenchMOS™ logic level FET
9. Revision history
Table 6:
Revision history
Document ID
Release date
Data sheet status Change notice
Doc. number
Supersedes
PH2625L_2
20050224
Preliminary data
sheet
9397 750 14324
PH2625L-01
Modifications:
PH2625L-01
-
•
The format of this data sheet has been redesigned to comply with the new presentation and
information standard of Philips Semiconductors.
•
RDSon data revised in Section 1.4 “Quick reference data” and Section 6 “Characteristics”
20040428
Preliminary data
sheet
-
9397 750 14324
Preliminary data sheet
9397 750 12306
-
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 02 — 24 February 2005
11 of 13
PH2625L
Philips Semiconductors
N-channel TrenchMOS™ logic level FET
10. Data sheet status
Level
Data sheet status [1]
Product status [2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
[2]
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
11. Definitions
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
13. Trademarks
TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V.
12. Disclaimers
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
14. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: [email protected]
9397 750 14324
Preliminary data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 02 — 24 February 2005
12 of 13
PH2625L
Philips Semiconductors
N-channel TrenchMOS™ logic level FET
15. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Contact information . . . . . . . . . . . . . . . . . . . . 12
© Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 24 February 2005
Document number: 9397 750 14324
Published in The Netherlands