Switching Diodes MA4S159 Silicon epitaxial planar type Unit : mm For switching circuits 2.1 ± 0.1 1.25 ± 0.1 2.0 ± 0.1 1.3 ± 0.1 ■ Features Symbol Rating Unit VR 80 V Reverse voltage (DC) Peak reverse voltage Average forward Single current Double Peak forward Single current Double Non-repetitive peak Single forward surge current* Double VRM 80 V IF(AV) 100 mA 225 2 3 1 : Anode 1 2 : Anode 2 3 : Cathode 2 4 : Cathode 1 S-Mini Type Package (4-pin) Marking Symbol: M1B 75 IFM 4 0.7 ± 0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter 1 0.3 ± 0.05 • Small S-mini type 4-pin package • Two isolated elements contained in one package, allowing highdensity mounting • Flat lead type, resulting in improved mounting efficiency and solderability with the high-speed mounting machine • Short reverse recovery time trr • Small terminal capacitance, Ct mA Internal Connection 170 IFSM 500 mA 1 4 2 3 375 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Note) * : t = 1 s ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Reverse current (DC) IR VR = 75 V Forward voltage (DC) VF IF = 100 mA Reverse voltage (DC) VR IR = 100 µA Terminal capacitance Ct VR = 0 V, f = 1 MHz Reverse recovery time* trr IF = 10 mA, VR = 6 V Irr = 0.1 · IR, RL = 100 Ω Typ Max Unit 0.1 µA 0.95 1.2 V 0.9 2 pF 3 ns 80 V Note) 1. Rated input/output frequency: 100 MHz 2. * : trr measuring circuit Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 0.1 · IR IF = 10 mA VR = 6 V RL = 100 Ω 1 MA4S159 Switching Diodes 104 Ta = 150°C 100°C 25°C − 20°C 1 10−1 1.6 1.4 Ta = 150°C Forward voltage VF (V) 102 10 VF Ta IR V R 105 Reverse current IR (nA) Forward current IF (mA) IF VF 103 100°C 103 102 25°C 1.2 1.0 IF = 100 mA 0.8 10 mA 0.6 3 mA 0.4 10 0.2 0 0.2 0.4 0.6 0.8 1.0 1 1.2 0 Forward voltage VF (V) 20 60 80 100 0 −40 120 Reverse voltage VR (V) IR Ta 35 V 6V 103 102 10 80 120 160 200 IF(surge) tW f = 1 MHz Ta = 25°C Terminal capacitance Ct (pF) VR = 75 V 40 1 000 1.2 104 0 Ambient temperature Ta (°C) Ct VR 105 Reverse current IR (nA) 40 Forward surge current IF(surge) (A) 10−2 1.0 0.8 0.6 0.4 0.2 Ta = 25°C IF(surge) 300 tW Non repetitive 100 30 10 3 1 0.3 1 −40 0 0 40 80 120 160 Ambient temperature Ta (°C) 2 200 0.1 0 20 40 60 80 100 Reverse voltage VR (V) 120 0.1 0.3 1 3 10 Pulse width tW (ms) 30