DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 BAP50-04 General purpose PIN diode Product specification Supersedes data of 1999 May 10 1999 Dec 03 Philips Semiconductors Product specification General purpose PIN diode BAP50-04 FEATURES PINNING • Two elements in series configuration in a small-sized plastic SMD package PIN • Low diode capacitance • Low diode forward resistance. DESCRIPTION 1 anode 2 cathode 3 common connection APPLICATIONS • General RF applications. handbook, halfpage 2 1 DESCRIPTION 2 Two planar PIN diodes in series configuration in an SOT23 small plastic SMD package. 1 3 3 MAM232 Marking code: 4Lp. Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VR continuous reverse voltage − 50 V IF continuous forward current − 50 mA Ptot total power dissipation − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature −65 +150 °C 1999 Dec 03 Ts = 90 °C 2 Philips Semiconductors Product specification General purpose PIN diode BAP50-04 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per diode VF forward voltage IF = 50 mA − 0.95 1.1 V VR reverse voltage IR = 10 µA 50 − − V IR reverse current VR = 50 V − − 100 nA Cd diode capacitance VR = 0; f = 1 MHz − 0.45 − pF VR = 1 V; f = 1 MHz − 0.35 0.6 pF rD diode forward resistance τL charge carrier life time LS series inductance VR = 5 V; f = 1 MHz − 0.3 0.5 pF IF = 0.5 mA; f = 100 MHz; note 1 − 25 40 Ω IF = 1 mA; f = 100 MHz; note 1 − 14 25 Ω IF = 10 mA; f = 100 MHz; note 1 − 3 5 Ω when switched from IF 10 mA to IR 6 mA; RL 100 Ω; measured at IR 3 mA − 1.05 − µs − 1.4 − nH Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS SYMBOL Rth j-s 1999 Dec 03 PARAMETER thermal resistance from junction to soldering point 3 VALUE UNIT 220 K/W Philips Semiconductors Product specification General purpose PIN diode BAP50-04 GRAPHICAL DATA MGS317 103 handbook, halfpage MGL927 600 handbook, halfpage Cd (fF) rD (Ω) 102 400 10 200 1 10 −2 0 10 −1 1 I F (mA) 10 0 5 f = 100 MHz; Tj = 25 °C. f = 1 MHz; Tj = 25 °C. Fig.2 Fig.3 Forward resistance as a function of the forward current; typical values. MGS319 0 handbook, halfpage 2 (dB) −1 15 VR (V) 20 Diode capacitance as a function of reverse voltage; typical values. MGS320 0 handbook, halfpage 2 (1) |S21| 10 |S21| (dB) −5 (2) (3) −2 −10 −3 −15 −4 −20 −5 0.5 1 1.5 2 2.5 −25 0.5 3 f (GHz) (1) IF = 10 mA. (2) IF = 1 mA. 2 2.5 3 (3) IF = 0.5 mA. Diode zero biased and inserted in series with a 50 Ω stripline circuit. Tamb = 25 °C. Insertion loss (|S21|2) of the diode in on-state as a function of frequency; typical values. 1999 Dec 03 1.5 f (GHz) Diode inserted in series with a 50 Ω stripline circuit and biased via the analyzer Tee network. Tamb = 25 °C. Fig.4 1 Fig.5 4 Isolation (|S21|2) of the diode in off-state as a function of frequency; typical values. Philips Semiconductors Product specification General purpose PIN diode BAP50-04 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 1999 Dec 03 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 TO-236AB 5 Philips Semiconductors Product specification General purpose PIN diode BAP50-04 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Dec 03 6 Philips Semiconductors Product specification General purpose PIN diode BAP50-04 NOTES 1999 Dec 03 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 125004/02/pp8 Date of release: 1999 Dec 03 Document order number: 9397 750 06476