DISCRETE SEMICONDUCTORS DATA SHEET BFG135 NPN 7GHz wideband transistor Product specification File under discrete semiconductors, SC14 1995 Sep 13 Philips Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The small emitter structures, with integrated emitter-ballasting resistors, ensure high output voltage capabilities at a low distortion level. PIN DESCRIPTION 1 emitter 2 base 3 emitter 4 collector 4 age The distribution of the active areas across the surface of the device gives an excellent temperature profile. 1 2 Top view 3 MSB002 - 1 Fig.1 SOT223. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter − − 25 V VCEO collector-emitter voltage open base − − 15 V IC DC collector current − − 150 mA Ptot total power dissipation up to Ts = 145 °C (note 1) − − 1 W hFE DC current gain IC = 100 mA; VCE = 10 V; Tj = 25 °C 80 130 − fT transition frequency IC = 100 mA; VCE = 10 V; f = 1 GHz; Tamb = 25 °C − 7 − GHz GUM maximum unilateral power gain IC = 100 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 °C − 16 − dB IC = 100 mA; VCE = 10 V; f = 800 MHz; Tamb = 25 °C − 12 − dB 850 − mV Vo output voltage dim = −60 dB; IC = 100 mA; VCE = 10 V; − RL = 75 Ω; Tamb = 25 °C; f(p+q−r) = 793.25 MHz LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 25 VCEO collector-emitter voltage open base − 15 V VEBO emitter-base voltage open collector − 2 V IC DC collector current − 150 mA Ptot total power dissipation − 1 W Tstg storage temperature −65 150 °C Tj junction temperature − 175 °C up to Ts = 145 °C (note 1) Note 1. Ts is the temperature at the soldering point of the collector tab. 1995 Sep 13 2 V Philips Semiconductors Product specification NPN 7GHz wideband transistor BFG135 THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER THERMAL RESISTANCE CONDITIONS thermal resistance from junction to soldering point up to Ts = 145 °C (note 1) 30 K/W Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. − TYP. − MAX. UNIT µA ICBO collector cut-off current IE = 0; VCB = 10 V hFE DC current gain IC = 100 mA; VCE = 10 V 80 130 − Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz − 2 − pF Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz − 7 − pF 1 Cre feedback capacitance IC = 0; VCE = 10 V; f = 1 MHz − 1.2 − pF fT transition frequency IC = 100 mA; VCE = 10 V; f = 1 GHz; Tamb = 25 °C − 7 − GHz GUM maximum unilateral power gain IC = 100 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 °C − 16 − dB IC = 100 mA; VCE = 10 V; f = 800 MHz; Tamb = 25 °C − 12 − dB note 1 − 900 − mV note 2 − 850 − mV IC = 90 mA; VCE = 10 V; VO = 50 dBmV; Tamb = 25 °C; f(p+q) = 450 MHz; fp = 50 MHz; fq = 400 MHz − −58 − dB IC = 90 mA; VCE = 10 V; VO = 50 dBmV; Tamb = 25 °C; f(p+q) = 810 MHz; fp = 250 MHz; fq = 560 MHz − −53 − dB Vo d2 output voltage second order intermodulation distortion Notes 1. dim = −60 dB (DIN 45004B); IC = 100 mA; VCE = 10 V; RL = 75 Ω; Tamb = 25 °C; Vp = Vo at dim = −60 dB; fp = 445.25 MHz; Vq = Vo −6 dB; fq = 453.25 MHz; Vr = Vo −6 dB; fr = 455.25 MHz; measured at f(p+q−r) = 443.25 MHz. 2. dim = −60 dB (DIN 45004B); IC = 100 mA; VCE = 10 V; RL = 75 Ω; Tamb = 25 °C; Vp = Vo at dim = −60 dB; fp = 795.25 MHz; Vq = Vo −6 dB; fq = 803.25 MHz; Vr = Vo −6 dB; fr = 805.25 MHz; measured at f(p+q−r) = 793.25 MHz. 1995 Sep 13 3 Philips Semiconductors Product specification NPN 7GHz wideband transistor BFG135 ,, , VCC handbook, full pagewidth C4 L6 C5 L5 VBB C3 input 75 Ω C1 C6 L3 R1 output 75 Ω R2 L1 L2 L4 DUT C7 C2 R3 R4 MBB284 Fig.2 Intermodulation distortion and second order intermodulation distortion test circuit. List of components (see test circuit) DESIGNATION DESCRIPTION VALUE UNIT DIMENSIONS CATALOGUE NO. C1, C3, C5, C6 multilayer ceramic capacitor 10 nF 2222 590 08627 C2, C7 multilayer ceramic capacitor 1 pF 2222 851 12108 C4 (note 1) miniature ceramic plate capacitor 10 nF L1 microstripline 75 Ω length 7 mm; width 2.5 mm 2222 629 08103 L2 microstripline 75 Ω length 22mm; width 2.5 mm L3 (note 1) 1.5 turns 0.4 mm copper wire L4 microstripline 75 Ω L5 Ferroxcube choke 5 µH L6 (note 1) 0.4 mm copper wire ≈25 nH R1 metal film resistor 10 kΩ 2322 180 73103 R2 (note 1) metal film resistor 200 Ω 2322 180 73201 R3, R4 metal film resistor 27 Ω 2322 180 73279 int. dia. 3 mm; winding pitch 1 mm length 19 mm; width 2.5 mm 3122 108 20153 length 30 mm Note 1. Components C4, L3, L6 and R2 are mounted on the underside of the PCB. The circuit is constructed on a double copper-clad printed circuit board with PTFE dielectric (εr = 2.2); thickness 1⁄ 1 16 inch; thickness of copper sheet ⁄32 inch. 1995 Sep 13 4 Philips Semiconductors Product specification NPN 7GHz wideband transistor BFG135 handbook, full pagewidth VBB VCC C3 C5 R1 75 Ω input L5 R3 C1 L3 L1 L2 C2 C6 75 Ω output L4 C7 R2 R4 L6 C4 MBB299 andbook, full pagewidth 80 mm 60 mm MBB298 handbook, full pagewidth MBB297 Fig.3 Intermodulation distortion test printed-circuit board. 1995 Sep 13 5 Philips Semiconductors Product specification NPN 7GHz wideband transistor BFG135 MBB300 MBB294 1.2 160 handbook, halfpage P handbook, halfpage tot (W) h FE 1.0 0.8 120 0.6 0.4 80 0.2 40 0 0 50 100 150 Ts 200 ( o C) 0 40 80 120 160 I C (mA) VCE = 10 V; Tj = 25 °C. Fig.5 DC current gain as a function of collector current. Fig.4 Power derating curve. MBB295 MBB296 8 3 handbook, halfpage handbook, halfpage fT (GHz) C re (pF) 6 2 4 1 2 0 0 0 4 8 12 0 16 20 VCB (V) 120 160 VCE = 10 V; f = 1 GHz; Tamb = 25 °C. Feedback capacitance as a function of collector-base voltage. 1995 Sep 13 80 I C (mA) IE = 0; f = 1 MHz; Tj = 25 °C. Fig.6 40 Fig.7 6 Transition frequency as a function of collector current. Philips Semiconductors Product specification NPN 7GHz wideband transistor BFG135 MBB292 MBB293 45 45 handbook, halfpage handbook, halfpage d im (dB) d im (dB) 50 50 55 55 60 60 65 65 70 20 40 60 80 70 20 100 120 I C (mA) VCE = 10 V; Vo = 900 mV; Tamb = 25 °C; f(p+q−r) = 443.25 MHz. Fig.8 40 60 80 VCE = 10 V; Vo = 850 mV; Tamb = 25 °C; f(p+q−r) = 793.25 MHz. Intermodulation distortion as a function of collector current. Fig.9 Intermodulation distortion as a function of collector current. MBB291 MBB290 45 45 handbook, halfpage handbook, halfpage d2 (dB) d2 (dB) 50 50 55 55 60 60 65 65 70 20 100 120 I C (mA) 40 60 80 70 20 100 120 I C (mA) 40 60 80 100 120 I C (mA) VCE = 10 V; Vo = 50 dBmV; Tamb = 25 °C; f(p+q) = 450 MHz. VCE = 10 V; Vo = 50 dBmV; Tamb = 25 °C f(p+q) = 810 MHz. Fig.10 Second order intermodulation distortion as a function of collector current. Fig.11 Second order intermodulation distortion as a function of collector current. 1995 Sep 13 7 Philips Semiconductors Product specification NPN 7GHz wideband transistor BFG135 MEA951 60 MEA952 50 handbook, Z halfpage handbook, halfpage L (Ω) ZL (Ω) 50 40 40 RL RL 30 30 20 20 10 10 0 –10 XL 0 0.25 0.50 XL 0 0.75 1.0 POUT (W) 0 0.5 1 POUT (W) 1.5 VCE = 7.5 V; f = 900 MHz. VCE = 10 V; f = 900 MHz. Fig.12 Load impedance as a function of output power. Fig.13 Load impedance as a function of output power. MEA953 60 MEA948 10 handbook, halfpage handbook, halfpage ZL (Ω) Zi (Ω) 50 8 ri RL 40 xi 6 30 4 20 XL 10 2 0 0 0 0.5 1 P (W) 1.5 OUT 0 0.25 0.50 0.75 1.0 P (W) OUT VCE = 12.5 V; f = 900 MHz. VCE = 7.5 V; f = 900 MHz. Fig.14 Load impedance as a function of output power. Fig.15 Input impedance as a function of output power. 1995 Sep 13 8 Philips Semiconductors Product specification NPN 7GHz wideband transistor BFG135 MEA949 MEA950 10 10 handbook, halfpage handbook, halfpage Zi (Ω) Zi (Ω) 8 8 ri ri 6 6 xi xi 4 4 2 2 0 0 0 0.5 0 1.5 1 0.5 1 POUT (W) 1.5 POUT (W) VCE = 10 V; f = 900 MHz. VCE = 12.5 V; f = 900 MHz. Fig.16 Input impedance as a function of output power. Fig.17 Input impedance as a function of output power. MEA947 MEA945 1.5 80 handbook, halfpage handbook, halfpage η (%) V CE = 12.5 V P OUT (W) V CE = 12.5 V 70 7.5 V 10 V 1 10 V 7.5 V 60 0.5 50 40 0 0 0.5 1 POUT (W) 1.5 0 100 200 300 P IN (mW) f = 900 MHz. f = 900 MHz. Fig.18 Efficiency as a function of output power. Fig.19 Output power as a function of input power. 1995 Sep 13 9 Philips Semiconductors Product specification NPN 7GHz wideband transistor BFG135 MEA946 MBB289 40 10 handbook, halfpage handbook, halfpage Gp (dB) G UM V (dB) = CE 12.5 V 8 30 6 10 V 20 7.5 V 4 10 2 0 0 0 0.5 1 POUT (W) 1.5 10 102 103 f (MHz) 104 IC = 100 mA; VCE = 10 V; Tamb = 25 °C. f = 900 MHz. Fig.21 Maximum unilateral power gain as a function of frequency. Fig.20 Power gain as a function of output power. 1995 Sep 13 10 Philips Semiconductors Product specification NPN 7GHz wideband transistor BFG135 50 handbook, full pagewidth 25 100 10 250 +j 10 0 25 50 100 ∞ 250 –j 250 10 100 25 MBB288 50 IC = 100 mA; VCE = 10 V; Tamb = 25 °C; Zo = 50 Ω.. Fig.22 Common emitter input reflection coefficient (S11). 90 o handbook, full pagewidth 60 o 120 o 150 o 180 o 50 30 o 40 30 20 10 0o 30 o 150 o 60 o 120 o 90 o MBB286 IC = 100 mA; VCE = 10 V; Tamb = 25 °C. Fig.23 Common emitter forward transmission coefficient (S21). 1995 Sep 13 11 Philips Semiconductors Product specification NPN 7GHz wideband transistor BFG135 90 o handbook, full pagewidth 60 o 120 o 150 o 30 o 0.1 0.2 180 o 0.3 0.4 0.5 0.6 0o 30 o 150 o 60 o 120 o 90 o MBB285 IC = 100 mA; VCE = 10 V; Tamb = 25 °C. Fig.24 Common emitter reverse transmission coefficient (S12). 50 handbook, full pagewidth 25 100 10 250 +j 0 10 25 50 100 250 ∞ –j 250 10 100 25 50 MBB287 IC = 100 mA; VCE = 10 V; Tamb = 25 °C; Zo = 50 Ω.. Fig.25 Common emitter output reflection coefficient (S22). 1995 Sep 13 12