PHILIPS PEMD12

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
PEMD12
NPN/PNP resistor-equipped
transistors
Product specification
Supersedes data of 2001 Aug 30
2001 Nov 07
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors
FEATURES
PEMD12
QUICK REFERENCE DATA
• 300 mW total power dissipation
SYMBOL
• Very small 1.6 mm x 1.2 mm ultra thin package
VCEO
collector-emitter voltage
50
V
ICM
peak collector current
100
mA
R1
bias resistor
47
kΩ
R2
bias resistor
47
kΩ
• Excellent coplanarity due to straight leads
• Replaces two SC-75/SC-89 packaged transistors on
same PCB area
• Reduces required PCB area
• Reduced pick and place costs.
PARAMETER
MAX.
UNIT
PINNING
PIN
APPLICATIONS
• General purpose switching and amplification
• Inverter and interface circuits
DESCRIPTION
1, 4
emitter
TR1; TR2
2, 5
base
TR1; TR2
6, 3
collector
TR1; TR2
• Circuit driver.
DESCRIPTION
handbook, halfpage
6
6
5
5
4
4
NPN/PNP resistor-equipped transistor in a SOT666 plastic
package.
R1
R2
TR2
TR1
MARKING
TYPE NUMBER
PEMD12
R2
MARKING CODE
1
2
3
1
D2
R1
2
3
MAM448
Top view
Fig.1 Simplified outline (SOT666) and symbol.
2, 5
6, 3
1, 4
MBK120
Fig.2 Equivalent inverter symbol.
2001 Nov 07
2
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors
PEMD12
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor for the PNP transistor with negative polarity
VCBO
collector-base voltage
open emitter
−
50
V
VCEO
collector-emitter voltage
open base
−
50
V
VEBO
emitter-base voltage
open collector
−
10
V
VI
input voltage TR1
positive
−
+40
V
negative
−
−10
V
input voltage TR2
positive
−
+10
V
negative
−
−40
V
−
100
mA
Io
output current (DC)
ICM
peak collector current
Ptot
total power dissipation
Tstg
−
100
mA
−
200
mW
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
−
300
mW
Tamb ≤ 25 °C; notes 1 and 2
Per device
total power dissipation
Ptot
Tamb ≤ 25 °C; note 1
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering is reflow soldering.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
notes 1 and 2
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering is reflow soldering.
2001 Nov 07
3
VALUE
UNIT
416
K/W
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors
PEMD12
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per transistor for the PNP transistor with negative polarity
ICBO
collector-base cut-off current
ICEO
collector-emitter cut-off current
VCB = 50 V; IE = 0
−
−
100
nA
VCE = 50 V; IB = 0
−
−
1
µA
VCE = 30 V; IB = 0; Tj = 150 °C
−
−
50
µA
µA
IEBO
emitter-base cut-off current
VEB = 5 V; IC = 0
−
−
90
hFE
DC current gain
VCE = 5 V; IC = 5 mA
80
−
−
VCEsat
saturation voltage
IC = 10 mA; IB = 0.5 mA
−
−
150
mV
Vi(off)
input off voltage
VCE = 5 V; IC = 100 µA
−
1.2
0.8
V
Vi(on)
input on voltage
VCE = 0.3 V; IC = 2 mA
3
1.6
−
V
R1
input resistor
33
47
61
kΩ
R2
-------R1
resistor ratio
0.8
1
1.2
Cc
collector capacitance
−
−
2.5
pF
−
−
3
pF
TR1 (NPN)
IE = ie = 0; VCB = 10 V;
f = 1 MHz
TR2 (PNP)
2001 Nov 07
4
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors
MLD716
103
handbook, halfpage
hFE
MLD715
10−1
handbook, halfpage
(1)
VCEsat
(V)
(2)
102
PEMD12
(1)
(2)
(3)
(3)
10
1
10−1
1
10
IC (mA)
10−2 −1
10
102
TR1 (NPN); VCE = 5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
TR1 (NPN); IC/IB = 20.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
Fig.3
Fig.4
DC current gain as a function of collector
current; typical values.
MLD718
10
10
1
102
Collector-emitter saturation voltage as a
function of collector current; typical values.
MLD717
102
handbook, halfpage
handbook, halfpage
IC (mA)
Vi(on)
(V)
Vi(off)
(V)
10
(1)
(2)
1
(1)
(2)
(3)
1
10−1
10−2
10−1
1
IC (mA)
(3)
10−1
10−1
10
TR1 (NPN); VCE = 5 V.
(1) Tamb = −40 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
TR1 (NPN); VCE = 0.3 V.
(1) Tamb = −40 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig.5
Fig.6
Input-off voltage as a function of collector
current; typical values.
2001 Nov 07
5
1
10
IC (mA)
102
Input-on voltage as a function of collector
current; typical values.
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors
MLD720
103
handbook, halfpage
PEMD12
MLD719
−10−1
handbook, halfpage
(1)
hFE
VCEsat
(V)
(2)
(3)
102
(1)
(2)
(3)
10
1
−10−1
−1
−10
IC (mA)
−10−2 −1
−10
−102
TR2 (PNP); VCE = −5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
TR2 (PNP); IC/IB = 20.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
Fig.7
Fig.8
DC current gain as a function of collector
current; typical values.
MLD722
−10
−10
−1
−102
Collector-emitter saturation voltage as a
function of collector current; typical values.
MLD721
−102
handbook, halfpage
handbook, halfpage
IC (mA)
Vi(on)
(V)
Vi(off)
(V)
−10
(1)
−1
(2)
(1)
(2)
(3)
−1
−10−1
−10−2
−10−1
−1
IC (mA)
−10−1
−10−1
−10
(3)
−1
−10
IC (mA)
−102
TR2 (PNP); VCE = −5 V.
(1) Tamb = −40 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
TR2 (PNP); VCE = −0.3 V.
(1) Tamb = −40 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig.9
Fig.10 Input-on voltage as a function of collector
current; typical values.
Input-off voltage as a function of collector
current; typical values.
2001 Nov 07
6
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors
PEMD12
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT666
D
E
A
X
Y S
S
HE
6
5
4
pin 1 index
A
1
2
e1
c
3
bp
w M A
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp
c
D
E
e
e1
HE
Lp
w
y
mm
0.6
0.5
0.27
0.17
0.18
0.08
1.7
1.5
1.3
1.1
1.0
0.5
1.7
1.5
0.3
0.1
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
01-01-04
01-08-27
SOT666
2001 Nov 07
EUROPEAN
PROJECTION
7
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors
PEMD12
DATA SHEET STATUS
DATA SHEET STATUS(1)
PRODUCT
STATUS(2)
DEFINITIONS
Objective data
Development
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2001 Nov 07
8
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors
NOTES
2001 Nov 07
9
PEMD12
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors
NOTES
2001 Nov 07
10
PEMD12
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors
NOTES
2001 Nov 07
11
PEMD12
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected].
SCA73
© Koninklijke Philips Electronics N.V. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/02/pp12
Date of release: 2001
Nov 07
Document order number:
9397 750 09045