Order this document by BF421/D SEMICONDUCTOR TECHNICAL DATA PNP Silicon COLLECTOR 2 3 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol BF421 BF423 Unit Collector – Emitter Voltage VCEO –300 –250 Vdc Collector – Base Voltage VCBO –300 –250 Vdc Emitter – Base Voltage VEBO –5.0 Vdc Collector Current — Continuous IC –500 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Watts mW/°C TJ, Tstg – 55 to +150 °C Operating and Storage Junction Temperature Range 3 CASE 29–04, STYLE 14 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Max –300 –250 — — –300 –250 — — –5.0 –5.0 — — — — –0.01 — — — –100 — Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (1) (IC = –1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –100 mAdc, IC = 0) Collector Cutoff Current (VCB = –200 Vdc, IE = 0) Emitter Cutoff Current (VEB = –5.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%. V(BR)CEO BF421 BF423 Vdc V(BR)CBO BF421 BF423 Vdc V(BR)EBO BF421 BF423 Vdc mAdc ICBO BF421 BF423 IEBO BF421 BF423 Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 nAdc 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max 50 50 — — Unit ON CHARACTERISTICS DC Current Gain (IC = –25 mA, VCE = –20 Vdc) hFE BF421 BF423 — Collector – Emitter Saturation Voltage (IC = –20 mAdc, IB = –2.0 mAdc) VCE(sat) — –0.5 Vdc Base – Emitter Saturation Voltage (IC = –20 mA, IB = –2.0 mA) VBE(sat) — –2.0 Vdc fT 60 — MHz Cre — 2.8 pF SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = –10 mAdc, VCE = –10 Vdc, f = 20 MHz) Common Emitter Feedback Capacitance (VCB = –30 Vdc, IE = 0, f = 1.0 MHz) 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data 150 TJ = +125°C VCE = –10 Vdc hFE, DC CURRENT GAIN 100 +25°C 70 –55°C 50 30 20 15 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –80 –100 IC, COLLECTOR CURRENT (mA) 100 50 C, CAPACITANCE (pF) Cib 20 10 5.0 2.0 Ccb 1.0 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100–200 –500 –1000 VR, REVERSE VOLTAGE (VOLTS) f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz) Figure 1. DC Current Gain 100 TJ = 25°C VCE = –20 Vdc 80 60 40 30 20 0 –1.0 Figure 2. Capacitances –2.0 –5.0 –10 –20 IC, COLLECTOR CURRENT (mA) –50 –100 Figure 3. Current–Gain — Bandwidth Product –1.0 –500 100 µs IC, COLLECTOR CURRENT (mA) 1.0 ms V, VOLTAGE (VOLTS) –0.8 VBE @ VCE = –10 V –0.6 –0.4 –0.2 0 –1.0 VCE(sat) @ IC/IB = 10 mA –2.0 –5.0 –10 –20 IC, COLLECTOR CURRENT (mA) –50 –100 Figure 4. “On” Voltages Motorola Small–Signal Transistors, FETs and Diodes Device Data 1.0 s –200 –100 BF423 –50 –20 1.5 WATT THERMAL LIMITATION @ TC = 25°C 625 mW THERMAL LIMITATION @ TA = 25°C –10 –5.0 –3.0 BF421 BONDING WIRE LIMITATION SECOND BREAKDOWN LIMITATION TJ = 150°C –100 –200 –300 –5.0 –10 –20 –30 –50 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 5. Active Region — Safe Operating Area 3 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K DIM A B C D F G H J K L N P R V D J X X G H V C 1 SECTION X–X N N CASE 029–04 (TO–226AA) ISSUE AD INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE Motorola reserves the right to make changes without further notice to any products herein. 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