DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BGA2771 MMIC wideband amplifier Product specification Supersedes data of 2001 Oct 19 2002 Aug 06 Philips Semiconductors Product specification MMIC wideband amplifier BGA2771 FEATURES PINNING • Internally matched PIN • Wide frequency range DESCRIPTION 1 • Very flat gain • High output power • High linearity • Unconditionally stable. VS 2, 5 GND2 3 RF out 4 GND1 6 RF in APPLICATIONS 6 • Cable systems 5 4 1 • LNB IF amplifiers 6 • General purpose • ISM. 1 2 Top view 3 4 3 2, 5 MAM455 DESCRIPTION Marking code: G4-. Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package. Fig.1 Simplified outline (SOT363) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER VS DC supply voltage CONDITIONS TYP. MAX. UNIT 3 4 V IS DC supply current 33.3 − mA s212 insertion power gain f = 1 GHz 21.4 − dB NF noise figure f = 1 GHz 4.5 − dB PL(sat) saturated load power f = 1 GHz 13.2 − dBm CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. 2002 Aug 06 2 Philips Semiconductors Product specification MMIC wideband amplifier BGA2771 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER VS DC supply voltage IS supply current CONDITIONS MIN. RF input AC coupled Ts ≤ 80 °C MAX. UNIT − 4 V − 50 mA Ptot total power dissipation − 200 mW Tstg storage temperature −65 +150 °C Tj operating junction temperature − 150 °C PD maximum drive power − 10 dBm THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to solder point VALUE UNIT 300 K/W MAX. UNIT Ptot = 200 mW; Ts ≤ 80 °C CHARACTERISTICS VS = 3 V; IS = 33 mA; f = 1 GHz; Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER IS supply current s212 insertion power gain RL IN return losses input RL OUT return losses output NF noise figure CONDITIONS MIN. TYP. 29 33.3 45 mA f = 1 GHz − 21.4 − dB f = 2 GHz − 20.8 − dB f = 1 GHz − 17 − dB f = 2 GHz − 13 − dB f = 1 GHz − 9 − dB f = 2 GHz − 9 − dB f = 1 GHz − 4.5 − dB f = 2 GHz − 4.7 − dB −3 dB below flat gain at 1 GHz − 2.4 − GHz s212 BW bandwidth at PL(sat) saturated load power f = 1 GHz − 13.2 − dBm f = 2 GHz − 10.5 − dBm PL 1 dB load power at 1 dB gain compression; f = 1 GHz − 12.1 − dBm at 1 dB gain compression; f = 2 GHz − 8.4 − dBm IP3(in) IP3(out) 2002 Aug 06 input intercept point output intercept point f = 1 GHz − 0.5 − dBm f = 2 GHz − −4.3 − dBm f = 1 GHz − 21.9 − dBm f = 2 GHz − 16.5 − dBm 3 Philips Semiconductors Product specification MMIC wideband amplifier BGA2771 APPLICATION INFORMATION In Fig.6 the MMIC is used as a driver to the power amplifier as part of a transmitter circuit. Good linear performance and matched input and output offer quick design solutions in such applications. Figure 2 shows a typical application circuit for the BGA2771 MMIC. The device is internally matched to 50 Ω, and therefore does not need any external matching. The value of the input and output DC blocking capacitors C2 and C3 should be not more than 100 pF for applications above 100 MHz. However, when the device is operated below 100 MHz, the capacitor value should be increased. DC-block handbook, halfpage The nominal value of the RF choke L1 is 100 nH. At frequencies below 100 MHz this value should be increased to 220 nH. At frequencies above 1 GHz a much lower value must be used (e.g. 10 nH) to improve return losses. For optimal results, a good quality chip inductor such as the TDK MLG 1608 (0603), or a wire-wound SMD type should be chosen. DC-block 100 pF 100 pF DC-block 100 pF input output MGU437 Fig.3 Simple cascade circuit. Both the RF choke L1 and the 22 nF supply decoupling capacitor C1 should be located as closely as possible to the MMIC. Separate paths must be used for the ground planes of the ground pins GND1 and GND2, and these paths must be as short as possible. When using vias, use multiple vias per pin in order to limit ground path inductance. mixer handbook, halfpage from RF circuit to IF circuit or demodulator wideband amplifier MGU438 oscillator Fig.4 IF amplifier application. Vshalfpage handbook, C1 L1 Vs RF in RF input RF out C2 RF output C3 GND1 GND2 mixer handbook, halfpage to IF circuit or demodulator antenna MGU436 LNA wideband amplifier MGU439 oscillator Fig.2 Typical application circuit. Fig.5 RF amplifier application. Figure 3 shows two cascaded MMICs. This configuration doubles overall gain while preserving broadband characteristics. Supply decoupling and grounding conditions for each MMIC are the same as those for the circuit of Fig.2. from modulation or IF circuit The excellent wideband characteristics of the MMIC make it and ideal building block in IF amplifier applications such as LBNs (see Fig.4). to power amplifier wideband amplifier MGU440 oscillator As a buffer amplifier between an LNA and a mixer in a receiver circuit, the MMIC offers an easy matching, low noise solution (see Fig.5). 2002 Aug 06 mixer handbook, halfpage Fig.6 Power amplifier driver application. 4 Philips Semiconductors Product specification MMIC wideband amplifier BGA2771 90° handbook, full pagewidth 1.0 +1 135° 0.8 45° +2 +0.5 0.6 +0.2 0.4 +5 0.2 180° 0.2 0 0.5 3 GHz 1 100 MHz 2 5 0° 0 −5 −0.2 −0.5 −2 −135° −45° −1 MGU457 1.0 −90° IS = 33.4 mA; VS = 3 V; PD = −30 dBm; ZO = 50 Ω. Fig.7 Input reflection coefficient (s11); typical values. 90° handbook, full pagewidth 1.0 +1 135° 0.8 45° +2 +0.5 0.6 +0.2 0.4 +5 100 MHz 3 GHz 180° 0.2 0 0.2 1 2 5 0° 0 −5 −0.2 −0.5 −2 −135° −45° −1 MGU458 −90° IS = 33.4 mA; VS = 3 V; PD = −30 dBm; ZO = 50 Ω. Fig.8 Output reflection coefficient (s22); typical values. 2002 Aug 06 5 1.0 Philips Semiconductors Product specification MMIC wideband amplifier BGA2771 MGU459 0 12 (dB) s21 2 (dB) −20 20 −40 10 −60 MGU460 30 handbook, halfpage handbook, halfpage s 2 0 0 1000 2000 0 3000 1000 f (MHz) IS = 33.4 mA; VS = 3 V; PD = −30 dBm; ZO = 50 Ω. Fig.9 IS = 33.4 mA; VS = 3 V; PD = −30 dBm; ZO = 50 Ω. Isolation (s122) as a function of frequency; typical values. Fig.10 Insertion gain (s212) as a function of frequency; typical values. MGU461 20 handbook, halfpage PL (dBm) PL (dBm) 10 10 0 0 −10 −10 −30 −20 −10 MGU462 20 handbook, halfpage −20 −40 3000 2000 f (MHz) −20 −40 0 −30 PD (dBm) −20 −10 0 PD (dBm) VS = 3 V; f = 1 GHz; ZO = 50 Ω. VS = 3 V; f = 2 GHz; ZO = 50 Ω. Fig.11 Load power as a function of drive power at 1 GHz; typical values. Fig.12 Load power as a function of drive power at 2 GHz; typical values. 2002 Aug 06 6 Philips Semiconductors Product specification MMIC wideband amplifier BGA2771 MGU463 10 MGU464 5 handbook, halfpage handbook, halfpage NF (dB) K 8 4 6 3 4 2 2 1 0 0 0 1000 2000 f (MHz) 3000 0 1000 2000 f (MHz) 3000 IS = 33.4 mA; VS = 3 V; ZO = 50 Ω. IS = 33.4 mA; VS = 3 V; ZO = 50 Ω. Fig.13 Noise figure as a function of frequency; typical values. Fig.14 Stability factor as a function of frequency; typical values. Scattering parameters IS = 33.4 mA; VS = 3 V; PD = −30 dBm; ZO = 50 Ω; Tamb = 25 °C. f (MHz) s21 s11 s12 s22 MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) 100 0.09328 62.11 10.336 25.98 0.02953 13.71 0.50404 29.78 200 0.09722 25.33 11.266 5.910 0.02687 6.556 0.35904 16.09 400 0.10224 5.155 11.693 −13.69 0.02437 0.870 0.31417 −10.34 600 0.10707 −1.282 11.806 −27.51 0.02288 1.273 0.32541 −29.56 800 0.12009 −0.985 11.851 −40.46 0.02176 3.809 0.34755 −44.52 1000 0.13693 1.692 11.931 −53.00 0.02174 8.643 0.36785 −56.69 1200 0.15676 3.594 11.990 −65.95 0.02229 11.84 0.37169 −68.24 1400 0.17873 4.299 12.036 −79.54 0.02341 13.89 0.36720 −79.76 1600 0.20322 3.166 11.953 −93.52 0.02492 15.56 0.35425 −92.62 1800 0.21560 0.032 11.755 −108.7 0.02645 13.77 0.33802 −107.7 2000 0.20901 −2.617 11.224 −124.7 0.02676 11.10 0.32517 −125.3 2200 0.18846 −5.529 10.499 −140.3 0.02653 9.411 0.32259 −145.1 2400 0.14965 −1.870 9.2991 −156.2 0.02605 6.749 0.33529 −164.4 2600 0.11394 11.81 7.8388 −169.3 0.02388 3.622 0.37019 178.5 2800 0.11394 36.35 6.7932 −178.5 0.02139 6.039 0.39826 165.2 3000 0.13292 50.28 5.9348 174.2 0.01987 12.49 0.44613 156.5 2002 Aug 06 7 Philips Semiconductors Product specification MMIC wideband amplifier BGA2771 PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT363 D E B y X A HE 6 v M A 4 5 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION SOT363 2002 Aug 06 REFERENCES IEC JEDEC EIAJ SC-88 8 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification MMIC wideband amplifier BGA2771 DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2002 Aug 06 9 Philips Semiconductors Product specification MMIC wideband amplifier BGA2771 NOTES 2002 Aug 06 10 Philips Semiconductors Product specification MMIC wideband amplifier BGA2771 NOTES 2002 Aug 06 11 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA74 © Koninklijke Philips Electronics N.V. 2002 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613516/03/pp12 Date of release: 2002 Aug 06 Document order number: 9397 750 10017 This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.