BGM1013 MMIC wideband amplifier Rev. 03 — 9 December 2004 Product data sheet 1. Product profile 1.1 General description Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package. CAUTION This device is sensitive to electrostatic discharge (ESD). Therefore care should be taken during transport and handling. MSC895 1.2 Features ■ ■ ■ ■ ■ ■ ■ ■ Internally matched to 50 Ω Good output match to 75 Ω Very high gain; 35.5 dB at 1 GHz Upper corner frequency at 2.1 GHz 31 dB flat gain up to 2.2 GHz application 14 dBm saturated output power at 1 GHz High linearity (23 dBm IP3out and 43 dBc IM2) 40 dB isolation. 1.3 Applications ■ Low Noise Block (LNB) Intermediate Frequency (IF) amplifiers ■ Cable systems ■ General purpose. 1.4 Quick reference data Table 1: Quick reference data Symbol Parameter Conditions Min Typ Max Unit VS DC supply voltage RF input; AC coupled - 5 6 V IS DC supply current 23 27.5 33 mA |s21|2 insertion power gain f = 1 GHz 34.5 35.5 36.2 dB NF noise figure f = 1 GHz - 4.6 4.7 dB PL(sat) saturated load power f = 1 GHz 13.0 14.0 - dBm BGM1013 Philips Semiconductors MMIC wideband amplifier 2. Pinning information Table 2: Pinning Pin Description 1 VS 2, 5 GND2 3 RF_OUT 4 GND1 6 RF_IN Simplified outline 6 5 Symbol 1 4 6 3 4 2, 5 sym062 1 2 3 SOT363 3. Ordering information Table 3: Ordering information Type number BGM1013 Package Name Description Version SC-88 plastic surface mounted package; 6 leads SOT363 4. Marking Table 4: Marking codes Type number Marking code BGM1013 C4- 5. Limiting values Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VS DC supply voltage RF input; AC coupled IS DC supply current Ptot total power dissipation Tstg storage temperature Tj PD Max Unit - 6 V - 35 mA - 200 mW −65 +150 °C junction temperature - 150 °C maximum drive power - −10 dBm Tsp ≤ 90 °C 9397 750 14413 Product data sheet Min © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 03 — 9 December 2004 2 of 14 BGM1013 Philips Semiconductors MMIC wideband amplifier 6. Recommended operating conditions Table 6: Operating conditions Symbol Parameter VS Tamb Conditions Min Typ Max Unit supply voltage 4.5 5.0 5.5 V ambient temperature −40 25 85 °C 7. Thermal characteristics Table 7: Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-sp) thermal resistance from junction to solder point Ptot = 200 mW; Tsp ≤ 90 °C 300 K/W 8. Characteristics Table 8: Characteristics VS = 5 V; IS = 27.5 mA; Tj = 25 °C; measured on demo board; unless otherwise specified. Symbol Parameter VS DC supply voltage IS DC supply current |s21|2 insertion power gain |s11|2 |s22|2 input return loss output return loss Conditions Min Typ Max Unit RF input; AC coupled - 5 6 V 23 27.5 33 mA f = 100 MHz 34.5 35.2 35.9 dB f = 1 GHz 34.5 35.5 36.2 dB f = 1.8 GHz 33.0 34.0 35.2 dB f = 2.2 GHz 30.5 31.8 33.1 dB f = 2.6 GHz 25.2 29.7 31.2 dB f = 3 GHz 24.0 26.1 27.9 dB f = 1 GHz 10.1 10.6 - dB f = 2.2 GHz 9.3 10.2 - dB f = 1 GHz 18 20 - dB f = 2.2 GHz 13 16 - dB f = 1 GHz 15 17 - dB f = 2.2 GHz 12 15 - dB f = 1 GHz 40 42 - dB f = 2.2 GHz 34 36 - dB ZL = 50 Ω ZL = 75 Ω |s12|2 NF isolation noise figure f = 1 GHz - 4.6 4.7 dB f = 2.2 GHz - 4.9 5.1 dB GHz B bandwidth 3 dB below flat gain at f = 1 GHz - 2.1 - K stability factor f = 1 GHz 1.2 1.3 - f = 2.2 GHz 0.9 1.0 - PL(sat) saturated load power f = 1 GHz 13.0 14.0 - dBm f = 2.2 GHz 9.0 10.2 - dBm 9397 750 14413 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 03 — 9 December 2004 3 of 14 BGM1013 Philips Semiconductors MMIC wideband amplifier Table 8: Characteristics …continued VS = 5 V; IS = 27.5 mA; Tj = 25 °C; measured on demo board; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit PL(1dB) load power at 1 dB gain compression f = 1 GHz 12.0 13.0 - dBm f = 2.2 GHz 7.0 8.1 - dBm input third order intercept point f = 1 GHz −14 −12.8 - dBm f = 2.2 GHz −15 −13.2 - dBm 21 22.7 - dBm 17 18.6 - dBm IP3in IP3out output third order intercept point f = 1 GHz f = 2.2 GHz IM2 second order intermodulation product f0 = 1 GHz; PD = −45 dBm (PL = −10 dBm) - 45 43 dBc f0 = 1 GHz; PD = −40 dBm (PL = −5 dBm) - 43 41 dBc 9. Application information Figure 1 shows a typical application circuit for the BGM1013 MMIC. The device is internally matched to 50 Ω and therefore does not need any external matching. Output impedance is also very good to 75 Ω load. The value of the input and output DC blocking capacitors C1 and C2 should be not more than 100 pF for applications above 100 MHz. Their values can be used to fine-tune the input and output impedance. For the RF-choke, optimal results are obtained with a good quality chip inductor like the TDK MLG1608 (0603) or a wire-wound SMD. The value of the inductor can be used to fine-tune the output impedance. The RF choke and supply decoupling components should be located as close as possible to the MMIC. Ground paths must be as short as possible. The printed-circuit board (PCB) top ground plane must be as close as possible to the MMIC, and ideally directly beneath it. When using vias, use at least 3 vias for the top ground plane in order to limit ground path inductance. Supply decoupling with C3 should be from pin 1 to the same top ground plane. VS VS 1 IN 6 RF in C3 L1 C2 3 OUT C1 RF out R1(1) BGM1013 SOT363 4 2, 5 GND1 GND2 001aab389 (1) R1 is omitted in typical application. Fig 1. Typical application circuit 9397 750 14413 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 03 — 9 December 2004 4 of 14 BGM1013 Philips Semiconductors MMIC wideband amplifier Figure 2 shows the PCB layout used for the typical application. 30 mm PH 30 mm IN OUT V+ PH IC1 C2 C1 L1 IN OUT C3 V+ 001aab395 Material = FR4; thickness = 0.6 mm; εr = 4.6. Fig 2. Printed-circuit board layout and component view for typical application Table 9: List of components used for the typical application Component Description Value C1, C2 multilayer ceramic chip capacitor 100 pF 0603 C3 multilayer ceramic chip capacitor 22 nF 0603 R1 SMD resistor - 0603 L1 SMD inductor 100 nH 0603 9397 750 14413 Product data sheet Dimensions © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 03 — 9 December 2004 5 of 14 BGM1013 Philips Semiconductors MMIC wideband amplifier 9.1 Flat gain application: 31 dB between 800 MHz and 2.2 GHz By changing the components at the output of the amplifier, a flatter gain can be obtained. The gain is 31 dB ± 1 dB between 800 MHz and 2.2 GHz. PL(1dB) is 10 dBm at 1 GHz and 5.7 dBm at 2.2 GHz. 30 mm PH 30 mm IN OUT V+ PH IC1 C2 R1 C1 L1 IN OUT C3 V+ 001aab397 Fig 3. Printed-circuit board layout and component view for 31 dB flat gain application Table 10: List of components used for the 31 dB flat gain application [1] Component Description Value Dimensions C1 multilayer ceramic chip capacitor 100 pF 0603 C2 multilayer ceramic chip capacitor 4.7 nF 0603 C3 multilayer ceramic chip capacitor 22 nF 0603 R1 SMD resistor 27 Ω 0603 L1 SMD inductor 5.6 nH 0603 [1] Pin 2 should not be connected in order to obtain optimal input matching. 9397 750 14413 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 03 — 9 December 2004 6 of 14 BGM1013 Philips Semiconductors MMIC wideband amplifier 90° 1.0 +1 135° +0.5 0.8 45° +2 0.6 +0.2 0.4 +5 0.2 180° 0 0.2 0.5 1 100 MHz 2 5 10 0° 0 3 GHz −5 −0.2 −135° −2 −0.5 −45° −1 1.0 −90° 001aab399 IS = 27.5 mA; VS = 5 V; PD = −35 dBm; Zo = 50 Ω. Fig 4. Input reflection coefficient (s11); typical values 90° 1.0 +1 135° +0.5 0.8 45° +2 0.6 +0.2 0.4 +5 100 MHz 0.2 180° 0 0.2 0.5 1 2 5 10 0° 0 3 GHz −5 −0.2 −135° −2 −0.5 −45° −1 −90° 1.0 001aab401 IS = 27.5 mA; VS = 5 V; PD = −35 dBm; Zo = 50 Ω. Fig 5. Output reflection coefficient (s22); typical values 9397 750 14413 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 03 — 9 December 2004 7 of 14 BGM1013 Philips Semiconductors MMIC wideband amplifier 001aab402 0 |s12| 2 (dB) −10 001aab404 40 |s21| 2 (dB) 35 (1) −20 (2) 30 −30 (3) 25 −40 −50 20 0 1000 2000 3000 0 1000 2000 f (MHz) 3000 f (MHz) IS = 27.5 mA; VS = 5 V; PD = −35 dBm; Zo = 50 Ω. PD = −35 dBm; Zo = 50 Ω. (1) IS = 32.6 mA; VS = 5.5 V. (2) IS = 27.5 mA; VS = 5 V. (3) IS = 21.5 mA; VS = 4.5 V. |2) Fig 6. Isolation (|s12 typical values as a function of frequency; 001aab406 20 (1) PL (dBm) (2) Fig 7. Insertion gain (|s21|2) as a function of frequency; typical values 001aab408 15 PL (dBm) (1) (2) 10 (3) (3) 10 5 0 0 −5 −10 −45 −35 −25 −15 −10 −40 −30 −20 PD (dBm) f = 1 GHz; Zo = 50 Ω. f = 2.2 GHz; Zo = 50 Ω. (1) VS = 5.5 V. (1) VS = 5.5 V. (2) VS = 5 V. (2) VS = 5 V. (3) VS = 4.5 V. (3) VS = 4.5 V. Fig 8. Load power as a function of drive power at 1 GHz; typical values Fig 9. Load power as a function of drive power at 2.2 GHz; typical values 9397 750 14413 Product data sheet −10 PD (dBm) © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 03 — 9 December 2004 8 of 14 BGM1013 Philips Semiconductors MMIC wideband amplifier 001aab410 6 001aab411 5 K NF (dB) 4 5.5 3 5 (1) 2 (2) (3) 4.5 1 4 0 0 500 1000 1500 2000 2500 f (MHz) Zo = 50 Ω. 0 1000 2000 3000 4000 f (MHz) IS = 27.5 mA; VS = 5 V; Zo = 50 Ω. (1) VS = 5.5 V. (2) VS = 5 V. (3) VS = 4.5 V. Fig 10. Noise figure as a function of frequency; typical values Fig 11. Stability factor as a function of frequency; typical values 9397 750 14413 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 03 — 9 December 2004 9 of 14 BGM1013 Philips Semiconductors MMIC wideband amplifier Table 11: Scattering parameters VS = 5 V; IS = 27.5 mA; PD = −35 dBm; Zo = 50 Ω; Tamb = 25 °C; measured on demo board. f (MHz) s11 s21 s12 s22 K-factor Magnitude (ratio) Angle (deg) Magnitude (ratio) Angle (deg) Magnitude (ratio) Angle (deg) Magnitude (ratio) Angle (deg) 100 0.259 19.3 57.79 2.5 0.01642 47.3 0.325 118.6 0.9 200 0.258 3.2 57.96 −10.9 0.01096 20.7 0.248 110.9 1.0 400 0.270 −25.6 60.08 −41.2 0.00712 −12.6 0.163 87.0 1.3 600 0.271 −43.7 60.60 −67.0 0.00751 −13.9 0.134 63.2 1.2 800 0.281 −61.5 60.74 −95.6 0.00687 −12.1 0.104 43.7 1.3 1000 0.296 −80.1 60.44 −121.2 0.00759 −7.3 0.092 37.7 1.2 1200 0.317 −102.3 59.21 −147.1 0.00828 −11.5 0.097 33.9 1.2 1400 0.335 −127.7 57.01 −172.9 0.00981 −16.8 0.123 25.6 1.1 1600 0.334 −158.1 54.46 160.8 0.01130 −25.1 0.142 6.0 1.0 1800 0.331 169.6 50.31 134.1 0.01272 −34.0 0.157 −14.2 1.0 2000 0.326 130.6 44.63 104.7 0.01571 −43.0 0.172 −39.8 0.9 2200 0.309 95.9 38.92 79.4 0.01826 −57.0 0.172 −61.9 0.9 2400 0.287 59.0 33.31 55.5 0.01994 −69.2 0.161 −83.5 1.0 2600 0.257 20.4 28.20 33.1 0.01952 −78.3 0.147 −104.4 1.1 2800 0.224 −15.5 23.60 13.1 0.02037 −89.9 0.139 −125.1 1.2 3000 0.198 −50.7 20.24 −4.8 0.02198 −99.8 0.127 −151.5 1.3 9397 750 14413 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 03 — 9 December 2004 10 of 14 BGM1013 Philips Semiconductors MMIC wideband amplifier 10. Package outline Plastic surface mounted package; 6 leads SOT363 D E B y X A HE 6 5 v M A 4 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION REFERENCES IEC SOT363 JEDEC JEITA SC-88 EUROPEAN PROJECTION ISSUE DATE 97-02-28 04-11-08 Fig 12. Package outline SOT363 (SC-88) 9397 750 14413 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 03 — 9 December 2004 11 of 14 BGM1013 Philips Semiconductors MMIC wideband amplifier 11. Revision history Table 12: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes BGM1013_3 20041209 Product data sheet - 9397 750 14413 BGM1013_2 Modifications: • Section 6 added. BGM1013_2 20041130 Product data sheet - 9397 750 14229 BGM1013_1 BGM1013_1 20040831 Product data sheet - 9397 750 13469 - 9397 750 14413 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 03 — 9 December 2004 12 of 14 BGM1013 Philips Semiconductors MMIC wideband amplifier 12. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 13. Definitions 14. Disclaimers Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 15. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: [email protected] 9397 750 14413 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 03 — 9 December 2004 13 of 14 BGM1013 Philips Semiconductors MMIC wideband amplifier 16. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 10 11 12 13 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Recommended operating conditions. . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 4 Flat gain application: 31 dB between 800 MHz and 2.2 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information . . . . . . . . . . . . . . . . . . . . 13 © Koninklijke Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 9 December 2004 Document number: 9397 750 14413 Published in The Netherlands