DISCRETE SEMICONDUCTORS DATA SHEET BLW80 UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for nominal supply voltages up to 13,5 V. BLW80 The transistor is housed in a 1⁄4" capstan envelope with a ceramic cap. The resistance stabilization of the transistor provides protection against device damage at severe load mismatch conditions. QUICK REFERENCE DATA R.F. performance up to Th = 25 °C in an unneutralized common-emitter class-circuit. MODE OF OPERATION VCE V f MHz PL W c.w. 12,5 470 4 > c.w. 12,5 175 4 typ. 15,0 PIN CONFIGURATION η % Gp dB 8,0 zi Ω YL mS 60 2,1 + j2,3 57 − j56 typ. 60 2,0 − j2,2 51 −j48 > PINNING - SOT122A. PIN 4 handbook, halfpage 1 3 DESCRIPTION 1 collector 2 emitter 3 base 4 emitter 2 Top view MBK187 Fig.1 Simplified outline. SOT122A. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged. March 1993 2 Philips Semiconductors Product specification UHF power transistor BLW80 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value VCESM max 36 V Collector-emitter voltage (open base) VCEO max 17 V Emitter-base voltage (open collector) VEBO max 4 V Collector current (d.c.) IC max 1 A Collector current (peak value); f > 1 MHz ICM max 3 A Total power dissipation (d.c. and r.f.) up to Tmb = 25 °C Ptot max 17 W Storage temperature Tstg −65 to +150 Operating junction temperature Tj max 200 °C MGP938 10 °C MGP939 30 handbook, halfpage handbook, halfpage r.f. power dissipation VCE ≤ 16.5 V f > 1 MHz Prf (W) IC (A) 20 short time operation during mismatch Tmb = 25 °C 1 Th = 70 °C continuous operation 10 10−1 1 10 VCE (V) derate by 0.092 W/K 0 102 0 Fig.2 D.C. soar. 50 Th (°C) 100 Fig.3 R.F. power dissipation. THERMAL RESISTANCE From junction to mounting base Rth j-mb = 10,3 K/W From mounting base to heatsink Rth mb-h = 0,6 K/W March 1993 3 Philips Semiconductors Product specification UHF power transistor BLW80 CHARACTERISTICS Tj = 25 °C Breakdown voltages Collector-emitter voltage VBE = 0; IC = 10 mA V(BR)CES > 36 V V(BR)CEO > 17 V V(BR)EBO > 4 V ICES < 4 mA Collector-emitter voltage open base; IC = 50 mA Emitter-base voltage open collector; IE = 4 mA Collector cut-off current VBE = 0; VCE = 17 V D.C. current gain (1) > 10 typ 35 VCEsat typ 0,75 V IC = 0,5 A; VCE = 12,5 V fT typ 1,75 GHz IC = 1,5 A; VCE = 12,5 V fT typ 1,25 GHz Cc typ 14 pF IC = 40 mA; VCE = 12,5 V Cre typ 7,1 pF Collector-stud capacitance Ccs typ 1,2 pF IC = 0,5 A; VCE = 5 V hFE Collector-emitter saturation voltage (1) IC = 1,5 A; IB = 0,3 A Transition frequency at f = 500 MHz (1) Collector capacitance at f = 1 MHz IE = Ie = 0; VCB = 12,5 V Feedback capacitance at f = 1 MHz Note 1. Measured under pulse conditions: tp ≤ 200 µs; δ ≤ 0,02. March 1993 4 Philips Semiconductors Product specification UHF power transistor BLW80 MGP562 MGP563 40 30 handbook, halfpage VCE = 5 V handbook, halfpage IE = Ie = 0 Cc f = 1 MHz Tj = 25 °C Tj = 25 °C hFE typ (pF) 30 20 typ 20 10 10 0 0 1 2 IC (A) 0 3 10 0 Fig.4 20 VCB (V) Fig.5 MGP564 2 handbook, full pagewidth VCE = 12.5 V f = 500 MHz Tj = 25 °C fT (GHz) typ 1 0 0 1 2 Fig.6 March 1993 5 IC (A) 3 Philips Semiconductors Product specification UHF power transistor BLW80 APPLICATION INFORMATION R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit) Th = 25 °C f (MHz) VCE (V) PL (W) PS (W) 470 12,5 4 < 0,63 470 13,5 4 − 175 12,5 4 − IC (A) η (%) 8,0 < 0,53 > typ 9,5 − typ 65 − − typ 15,0 − typ 60 2,0 − j2,2 51 − j48 Gp (dB) > 60 zi (Ω) YL (mS) 2,1 + j2,3 57 − j56 C1 handbook, full pagewidth L6 C2 50 Ω C7 L5 C3 C8 T.U.T. L1 50 Ω L7 L2 C4 C5 C6 L3 R2 R1 L4 +VCC MGP565 Fig.7 Class-B test circuit at f = 470 MHz. List of components: C1 = 2,2 pF (± 0,25 pF) ceramic capacitor C2 = C7 = C8 = 1,4 to 5,5 pF film dielectric trimmer (cat. no. 2222 809 09001) C3 = 5,6 pF (± 0,25 pF) ceramic capacitor C4 = 2 to 9 pF film dielectric trimmer (cat. no. 2222 809 09002) C5 = 100 pF ceramic feed-through capacitor C6 = 100 nF polyester capacitor L1 = stripline (22,5 mm × 6,0 mm) L2 = 13 turns closely wound enamelled Cu wire (0,5 mm); int. dia. 4 mm; leads 2 × 5 mm L3 = L4 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640) L5 = 51 nH; 3,5 turns Cu wire (1 mm); int. dia. 6 mm; coil length 7 mm; leads 2 × 5 mm L6 = stripline (10,0 mm × 6,0 mm) L7 = 15 nH; 1 turn Cu wire (1 mm); int. dia. 5 mm; leads 2 × 5 mm L1 and L6 are striplines on a double Cu-clad printed-circuit board with PTFE fibre-glass dielectric (εr = 2,74); thickness 1/16". R1 = R2 = 10 Ω (± 5%) carbon resistor Component layout and printed-circuit board for 470 MHz test circuit (Fig.8). March 1993 6 Philips Semiconductors Product specification UHF power transistor BLW80 101 handbook, full pagewidth 58 L3 C3 R1 rivet C1 L7 L2 C2 L1 C8 L6 C4 C7 L5 C5 R2 C6 L4 +VCC MGP566 The circuit and the components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as earth. Earth connections are made by means of hollow rivets. Fig.8 Component layout and printed-circuit board for 470 MHz test circuit. March 1993 7 Philips Semiconductors Product specification UHF power transistor BLW80 MGP567 10 handbook, halfpage handbook, halfpage Gp (dB) PL (W) f = 470 MHz Th = 25 °C typical values η (%) VCC = 13.5 V 10 100 70 °C η 5 0 50 0 0 150 VCC = 12.5 V Gp Th = 25 °C 5 MGP568 15 VCC = 12.5 V VCC = 13.5 V f = 470 MHz typical values 1 2 PS (W) 0 0 Fig.9 5 PL (W) 10 Fig.10 Conditions for R.F. SOAR f = 470 MHz Th = 70 °C Rth mb-h = 0,6 K/W VCCnom = 12,5 V or 13,5 V PS = PSnom at VCCnom and VSWR = 1 measured in the circuit of Fig.7. MGP569 6.5 handbook, halfpage PLnom (W) VSWR = 1 The transistor has been developed for use with unstabilized supply voltages. As the output power and drive power increase with the supply voltage, the nominal output power must be derated in accordance with the graph for safe operation at supply voltages other that the nominal. The graph shows the permissible output power under nominal conditions (VSWR = 1), as a function of the expected supply over-voltage ratio, with VSWR as parameter. VSWR = 6 6 10 5.5 50 5 1 1.1 1.2 PS PSnom VCC VCCnom The graph applies to the situation in which the drive (PS/PSnom) increases linearly with supply over-voltage ratio. 1.3 Fig.11 March 1993 8 Philips Semiconductors Product specification UHF power transistor BLW80 OPERATING NOTE Below 300 MHz a base-emitter resistor of 10 Ω is recommended to avoid oscillation. This resistor must be effective for r.f. only. MGP570 20 handbook, halfpage power gain versus frequency (class-B operation) Gp (dB) 15 10 5 100 300 f (MHz) 500 Measuring conditions: VCC = 12,5 V PL = 4 W Th = 25 °C typical values Fig.12 MGP571 10 handbook, halfpage MGP572 22 handbook, halfpage load impedance (parallel components) input impedance (series components) versus frequency (class-B operation) ri, xi RL (Ω) (Ω) 5 versus frequency (class-B operation) CL CL (pF) −30 20 ri −10 ri RL xi 0 −50 18 xi −5 100 300 f (MHz) 16 100 500 Measuring conditions: VCC = 12,5 V PL = 4 W Th = 25 °C typical values Measuring conditions: VCC = 12,5 V PL = 4 W Th = 25 °C typical values Fig.13 March 1993 300 Fig.14 9 f (MHz) −70 500 Philips Semiconductors Product specification UHF power transistor BLW80 PACKAGE OUTLINE Studded ceramic package; 4 leads SOT122A D A ceramic BeO metal Q c N1 A D1 w1 M A D2 N M W N3 M1 X detail X H b α 4 L 3 H 1 2 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 D2 H L M1 M N N1 max. N3 Q W w1 α mm 5.97 4.74 5.85 5.58 0.18 0.14 7.50 7.23 6.48 6.22 7.24 6.93 27.56 25.78 9.91 9.14 3.18 2.66 1.66 1.39 11.82 11.04 1.02 3.86 2.92 3.38 2.74 8-32 UNC 0.381 90° OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-04-18 SOT122A March 1993 EUROPEAN PROJECTION 10 Philips Semiconductors Product specification UHF power transistor BLW80 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. March 1993 11