DISCRETE SEMICONDUCTORS DATA SHEET BLT53 UHF power transistor Product specification May 1991 Philips Semiconductors Product specification UHF power transistor FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability • Withstands full load mismatch. BLT53 QUICK REFERENCE DATA RF performance at Tmb = 25 °C in a common emitter test circuit. MODE OF OPERATION f (MHz) c.w. class-B VCE (V) 470 7.5 PL (W) Gp (dB) > 6 8 ηc (%) > 60 WARNING DESCRIPTION Product and environmental safety - toxic materials NPN silicon planar epitaxial transistor encapsulated in a 4-lead SOT122D studless envelope with a ceramic cap. It is designed for common emitter, class-B operation in portable radio transmitters in the 470 MHz communications band. All leads are isolated from the mounting flange. This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. PIN CONFIGURATION PINNING - SOT122D PIN DESCRIPTION 1 collector 2 emitter 3 base 4 emitter halfpage 4 c 1 3 handbook, halfpage b MBB012 2 MSB055 Fig.1 Simplified outline and symbol. May 1991 2 e Philips Semiconductors Product specification UHF power transistor BLT53 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 10 V VEBO emitter-base voltage open collector − 3 V IC, IC(AV) collector current DC or average value − 2.5 A ICM collector current peak value f > 1 MHz − 7.5 A Ptot total power dissipation RF operation; Tmb = 25 °C − 35.5 W Tstg storage temperature range −65 150 °C Tj junction operating temperature − 200 °C MCD192 10 IC (A) MCD193 50 handbook, halfpage handbook, halfpage Ptot (W) (3) 40 Tmb = 25 oC (2) 70 oC 30 (1) 1 20 10 10−1 1 10 VCE (V) 0 102 0 40 80 120 160 Tmb (oC) (1) Continuous DC operation. (2) Continuous RF operation (f > 1 MHz). (3) Short time operation during mismatch (f > 1 MHz). Fig.2 DC SOAR. Fig.3 Power derating curve. THERMAL RESISTANCE SYMBOL Rth j-mb(RF) May 1991 PARAMETER CONDITIONS from junction to mounting base Ptot = 35.5 W; Tmb = 25 °C 3 MAX. 4.9 UNIT K/W Philips Semiconductors Product specification UHF power transistor BLT53 CHARACTERISTICS Tj = 25 °C. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)CBO collector-base breakdown voltage open emitter; IC = 20 mA 20 − − V V(BR)CEO collector-emitter breakdown voltage open base; IC = 40 mA 10 − − V V(BR)EBO emitter-base breakdown voltage open collector; IE = 4 mA 3 − − V ICES collector-emitter leakage current VBE = 0; VCE = 10 V − − 1 mA hFE DC current gain VCE = 5 V; IC = 1.2 A 25 − − fT transition frequency VCE = 7.5 V; IE = 1.6 A − 3.9 − GHz Cc collector capacitance VCB = 7.5 V; IE = Ie = 0; f = 1 MHz − 24 − pF Cre feedback capacitance VCE = 7.5 V; IC = 0; f = 1 MHz − 17 − pF Cc-mb collector-mounting base capacitance f = 1 MHz − 1.2 − pF MCD194 MCD195 handbook,80 halfpage handbook,50 halfpage Cc (pF) hFE 40 60 30 40 20 20 10 0 0 2 4 IC (A) 0 6 0 4 VCE = 5 V. IE = ie = 0; f = 1 MHz. Fig.4 Fig.5 May 1991 DC current gain as a function of collector current, typical values. 4 8 VCB (V) 12 Collector capacitance as a function of collector-base voltage, typical values. Philips Semiconductors Product specification UHF power transistor BLT53 MCD196 5 handbook, halfpage fT (GHz) 4 3 2 1 0 0 2 4 IE (A) 6 VCB = 7.5 V. Fig.6 May 1991 Transition frequency as a function of emitter current, typical values. 5 Philips Semiconductors Product specification UHF power transistor BLT53 APPLICATION INFORMATION RF performance at Tmb = 25 °C in a common emitter test circuit. MODE OF OPERATION f (MHz) c.w. class-B VCE (V) 470 7.5 MCD197 10 Gp (dB) handbook, halfpage η 70 > 6 typ. 6.8 > 60 typ. 65 MCD198 handbook,12 halfpage η PL (W) 60 Gp ηc (%) Gp (dB) 8 (%) 8 PL (W) 8 6 50 4 40 4 30 2 20 0 0 4 8 PL (W) 0 12 0 1 2 Class-B operation; VCE = 7.5 V; f = 470 MHz. Class-B operation; VCE = 7.5 V; f = 470 MHz. Fig.7 Fig.8 Gain and efficiency as functions of load power, typical values. Ruggedness in class-B operation The BLT53 is capable of withstanding a full load mismatch corresponding to VSWR = 50:1 through all phases at rated output power, up to a supply voltage of 9 V, and f = 470 MHz. May 1991 6 3 PD (W) 4 Load power as a function of drive power, typical values. Philips Semiconductors Product specification UHF power transistor handbook, full pagewidth BLT53 C2 input ZS = 50 Ω ,, C1 ,, C7 L4 L1 T.U.T. L3 R1 C3 C8 C4 output ZL = 50 Ω L2 C5 C6 R2 MBH107 L5 +VCC Fig.9 Class-B test circuit at f = 470 MHz. List of components (see test circuit) COMPONENT DESCRIPTION VALUE DIMENSIONS C1, C2, C7, C8 film dielectric trimmer 2 to 9 pF C3, C4 multilayer ceramic chip capacitor 15 pF C5 feed-through capacitor 100 pF C6 polyester capacitor 33 nF L1 stripline (note 1) 44 Ω 41.1 mm × 5 mm L2 13 turns closely wound enamelled 0.5 mm copper wire 320 nH int. dia. 4 mm L3 2 turns enamelled 1 mm copper wire L4 stripline (note 1) L5 grade 3B1 Ferroxcube wideband HF choke CATALOGUE NO. 2222 809 09002 int. dia. 4 mm; pitch 1.5 mm; leads 2 × 5 mm 44 Ω 52.7 mm × 5 mm 4312 020 36640 R1 0.25 W carbon resistor 1 Ω, 5% R2 0.25 W carbon resistor 10 Ω, 5% Note 1. The striplines are mounted on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (εr = 2.74); thickness 1⁄16 inch. May 1991 7 Philips Semiconductors Product specification UHF power transistor BLT53 146 handbook, full pagewidth 41.1 52.7 rivet (4x) 47 L2 input 50 Ω R1 C1 output 50 Ω C3 C7 L4 L1 C2 C6 C4 C8 L3 R2 C5 L5 VCC MBH108 The circuit and components are situated on one side of a copper-clad PTFE fibre-glass board; the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by means of hollow rivets. Dimensions in mm. Fig.10 Component layout for 470 MHz class-B test circuit. May 1991 8 Philips Semiconductors Product specification UHF power transistor BLT53 MCD199 MCD200 3 handbook, halfpage 4 handbook, halfpage ri RL ZL (Ω) Zi (Ω) 2 2 0 1 xi 0 400 XL −2 440 480 f (MHz) −4 400 520 440 480 f (MHz) 520 Class-B operation; VCE = 7.5 V; PL = 8 W. Class-B operation; VCE = 7.5 V; PL = 8 W. Fig.11 Input impedance (series components) as a function of frequency, typical values. Fig.12 Load impedance (series components) as a function of frequency, typical values. MCD201 handbook,10 halfpage Gp (dB) 8 6 handbook, halfpage 4 Zi ZL 2 MBA451 0 400 440 480 f (MHz) 520 Class-B operation; VCE = 7.5 V; PL = 8 W. Fig.13 Definition of transistor impedance. May 1991 Fig.14 Power gain as a function of frequency, typical values. 9 Philips Semiconductors Product specification UHF power transistor BLT53 PACKAGE OUTLINE Studless ceramic package; 4 leads SOT122D D A Q c D2 H b α 4 L 3 H 1 2 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D2 H L Q α mm 4.17 3.27 5.85 5.58 0.18 0.14 7.50 7.23 7.24 6.98 27.56 25.78 9.91 9.14 1.58 1.27 90° OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-04-18 SOT122D May 1991 EUROPEAN PROJECTION 10 Philips Semiconductors Product specification UHF power transistor BLT53 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. May 1991 11