P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BS250P ISSUE 2 SEPT 93 FEATURES * 45 Volt VDS * RDS(on)=14Ω D G REFER TO ZVP2106A FOR GRAPHS S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS -45 V Continuous Drain Current at Tamb =25°C ID -230 mA Pulsed Drain Current I DM -3 A Gate-Source Voltage VGS ±20 V Power Dissipation at Tamb =25°C Ptot 700 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BVDSS -45 Gate-Source Threshold Voltage VGS(th) -1 Gate Body Leakage Zero Gate Voltage Drain Current TYP. UNIT CONDITIONS. V ID=-100µ A, VGS=0V -3.5 V ID=-1mA, VDS=VGS IGSS -20 nA VGS=-15V, VDS=0V IDSS -500 nA VGS=0V, VDS=-25V 14 Ω VGS=-10V, ID=-200mA Static Drain-Source RDS(on) on-State Resistance (1) MAX. Forward gfs Transconductance (1)(2) 150 mS VDS=-10V, ID=-200mA Input Capacitance (2) Ciss 60 pF VGS=0V, VDS=-10V f=1MHz Turn-On Time (2)(3) t(on) 20 ns VDD≈ -25V, ID=-500mA Turn-Off Time (2)(3) t(off) 20 ns (1) Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% (2) Sample test (3) Switching times measured with a 50Ω source impedance and <5ns rise time on a pulse generator 3-28