BAM80 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BAM80 is Designed for VHF AM power amplifier Applications in the range of 100 to 150 MHz. PACKAGE STYLE .380 4L STUD FEATURES: .112x45° A B C • Common Emitter • PG = 6.0 dB at 20 W/150 MHz • Omnigold™ Metalization System E E ØC B D 8.5 A VCES 60 V VCEO 35 V TJ F E 4.0 V 85 W -65 °C to +200 °C TSTG -65 °C to +200 °C θJC 2.0 °C/W CHARACTERISTICS MAXIMUM DIM MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 B .980 / 24.89 C .370 / 9.40 .385 / 9.78 D .004 / 0.10 .007 / 0.18 E .320 / 8.13 .330 / 8.38 F .100 / 2.54 .130 / 3.30 G .450 / 11.43 .490 / 12.45 H .090 / 2.29 .100 / 2.54 I .155 / 3.94 .175 / 4.45 .750 / 19.05 J TC = 25 °C NONETEST CONDITIONS SYMBOL G #8-32 UNC-2A IC PDISS I J MAXIMUM RATINGS VEBO H MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 50 mA 35 V BVCES IC = 20 mA 60 V BVEBO IE = 5.0 mA 4.0 V ICBO VCB = 30 V ICES VCE = 30 V hFE VCE = 5.0 V Ccb VCB = 28 V PG ηC VSWR VCE = 13.5 V O TC = 125 C IC = 500 mA 5.0 f = 1.0 MHz POUT =20 W f = 150 MHz 6.0 65 30:1 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 2.0 mA 10 mA --- --- 75 pF dB % --- REV. B 1/1