Order this document by BU208A/D SEMICONDUCTOR TECHNICAL DATA . . . designed for use in televisions. • • • • Collector–Emitter Voltages VCES 1500 Volts Fast Switching — 400 ns Typical Fall Time Low Thermal Resistance 1_C/W Increased Reliability Glass Passivated (Patented Photoglass). Triple Diffused Mesa Technology for Long Term Stability 5.0 AMPERES NPN SILICON POWER TRANSISTOR 700 VOLTS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v CASE 1–07 TO–204AA (TO–3) MAXIMUM RATINGS Rating Symbol BU208A Unit Collector–Emitter Voltage VCEO(sus) 700 Vdc Collector–Emitter Voltage VCES 1500 Vdc Emitter–Base Voltage VEB 5.0 Vdc Collector Current — Continuous — Peak IC ICM 5.0 7.5 Vdc Base Current — Continuous — Peak (Negative) IB IBM 4.0 3.5 Adc Total Power Dissipation @ TC = 95_C Derate above 95_C PD 12.5 0.625 Watts W/_C TJ, Tstg – 65 to + 115 _C Symbol Max Unit RθJC 1.6 _C/W TL 275 _C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Maximum Lead Temperature for Soldering Purpose, 1/8″ from Case for 5 Seconds NOTES: 1. Pulsed 5.0 ms, Duty Cycle 10%. 2. See page 3 for Additional Ratings on A Type. 3. Figures in ( ) are Standard Ratings Motorola Guarantees are Superior. REV 7 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ BU208A ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VCEO(sus) 700 — — Vdc ICES — — 1.0 mAdc 5 — — 7 — — hFE 2.25 — — Collector–Emitter Saturation Voltage (IC = 4.5 Adc, IB = 2 Adc) VCE(sat) — — 1 Vdc Base–Emitter Saturation Voltage (IC = 4.5 Adc, IB = 2 Adc) VBE(sat) — — 1.5 Vdc fT — 4 — MHz Cob — 125 — pF Storage Time (see test circuit fig. 1) (IC = 4.5 Adc, IB1 = 1.8 Adc, LB = 10 µH) ts — 8 — µs Fall time (see test circuit fig. 1) (IC = 4.5 Adc, IB1 = 1.8 Adc, LB = 10 µH) tf — 0.4 — µs OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (IC = 100 mAdc, L = 25 mH) Collector Cutoff Current1 (VCE = rated VCES, VBE = 0) ALL TYPES Emitter Base Voltage1 (IC = 0, IE = 10 mAdc) (IC = 0, IE = 100 mAdc) VEBO Vdc ON CHARACTERISTICS1 DC Current Gain (IC = 4.5 Adc, VCE = 5 Vdc) DYNAMIC CHARACTERISTICS Current–Gain Bandwidth Product (IC = 0.1 Adc, VCE = 5 Vdc, ftest = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) SWITCHING CHARACTERISTICS 1Pulse test: PW = 300 µs; Duty cycle 2 2%. Motorola Bipolar Power Transistor Device Data BU208A + 40 V 1K 7 mH + 40 V 0.5 µF 250 µF 0.3 A FUSE 130 V POWER SUPPLY 400 mA 1K 6.5 mH Ly = 1.3 mH 1 µF 1N5242 (12 V) 100 Ω 10 K 820 3 10 nF 2 680 nF 220 MPSU04 RB 0.56 680 µF 10 K 16 15 T.U.T. 10 nF 1 TBA920 14 22 nF 22 nF 1A 1500 V LB 100 2K7 2K 3K3 Figure 1. Switching Time Test Circuit POWER DISSIPATION (W) 80 60 40 20 0 40 80 120 TC, CASE TEMPERATURE (°C) 160 200 Figure 2. Power Derating Motorola Bipolar Power Transistor Device Data 3 BU208A BASE DRIVE The Key to Performance By now, the concept of controlling the shape of the turn–off base current is widely accepted and applied in horizontal deflection design. The problem stems from the fact that good saturation of the output device, prior to turn–off, must be assured. This is accomplished by providing more than enough IB1 to satisfy the lowest gain output device hFE at the end of scan I CM. Worst–case component variations and maximum high voltage loading must also be taken into account. If the base of the output transistor is driven by a very low impedance source, the turn–off base current will reverse very quickly as shown in Fig. 3. This results in rapid, but only partial collector turn–off, because excess carriers become trapped in the high resistivity collector and the transistor is still conductive. This is a high dissipation mode, since the collector voltage is rising very rapidly. The problem is overcome by adding inductance to the base circuit to slow the base current reversal as shown in Fig. 4, thus allowing access carrier recombination in the collector to occur while the base current is still flowing. Choosing the right LB Is usually done empirically since the equivalent circuit is complex, and since there are several important variables (I CM, I B1, and h FE at I CM). One method is to plot fall time as a function of L B, at the desired conditions, for several devices within the h FE specification. A more informative method is to plot power dissipation versus I B1 for a range of values of LB. This shows the parameter that really matters, dissipation, whether caused by switching or by saturation. For very low LB a very narrow optimum is obtained. This occurs when IB1 hFE ICM, and therefore would be acceptable only for the “typical” device with constant ICM. As LB is increased, the curves become broader and flatter above the IB1. hFE = ICM point as the turn off “tails” are brought under control. Eventually, if LB is raised too far, the dissipation all across the curve will rise, due to poor initiation of switching rather than tailing. Plotting this type of curve family for devices of different hFE, essentially moves the curves to the left, or right according to the relation IB1 hFE = constant. It then becomes obvious that, for a specified ICM, an LB can be chosen which will give low dissipation over a range of hFE and/or IB1. The only remaining decision is to pick IB1 high enough to accommodate the lowest hFE part specified. Neither LB nor IB1 are absolutely critical. Due to the high gain of Motorola devices it is suggested that in general a low value of IB1 be used to obtain optimum efficiency — eg. for BU208A with ICM = 4.5 A use IB1 1.5 A, at ICM = 4 A use IB1 1.2 A. These values are lower than for most competition devices but practical tests have showed comparable efficiency for Motorola devices even at the higher level of IB1. An LB of 10 µH to 12 µH should give satisfactory operation of BU208A with ICM of 4 to 4.5 A and IB1 between 1.2 and 2 A. ^ [ [ TEST CIRCUIT WAVEFORMS IB IB IC IC (TIME) (TIME) Figure 3 Figure 4 TEST CIRCUIT OPTIMIZATION The test circuit may be used to evaluate devices in the conventional manner, i.e., to measure fall time, storage time, and saturation voltage. However, this circuit was designed to evaluate devices by a simple criterion, power supply input. 4 Excessive power input can be caused by a variety of problems, but it is the dissipation in the transistor that is of fundamental importance. Once the required transistor operating current is determined, fixed circuit values may be selected. Motorola Bipolar Power Transistor Device Data BU208A 13 VCE(sat) , COLLECTOR–EMITTER SATURATION VOLTAGE (V) 14 VCE = 5 V hFE, DC CURRENT GAIN 12 11 10 9 8 7 6 5 4 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (A) 5.0 10 0.5 0.4 0.3 IC/IB = 3 0.2 0.1 0 0.1 Figure 5. DC Current Gain VCE(sat) , COLLECTOR–EMITTER SATURATION VOLTAGE (V) VBE, BASE–EMITTER VOLTAGE (V) 1.6 1.4 1.3 1.2 1.1 IC/IB = 2 0.9 0.8 0.7 0.6 0.1 IC, COLLECTOR CURRENT (A) 15 10 5 0.2 0.5 5.0 5.0 10 2.4 IC = 2 A IC = 3 A IC = 3.5 A 2.0 IC = 4 A 1.6 IC = 4.5 A 1.2 0.8 0.4 0.1 0.2 0.5 1.0 2.0 Figure 8. Collector Saturation Region 1 µs 2 5 10 20 50 100 200 300 ICM (max.) TC ≤ 95°C BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT DUTY CYCLE ≤ 1% 0.02 0.01 0.005 2 5 10 20 10 5.0 Figure 7. Base–Emitter Saturation Voltage 0.2 0.1 0.05 10 2.8 IB, BASE CURRENT CONTINUOUS (A) 0.5 1 2.0 0.5 1.0 2.0 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) IC (max.) 2 1 0.002 0.001 1.0 0.2 Figure 6. Collector–Emitter Saturation Voltage 1.5 1.0 IC/IB = 2 50 100 200 1 ms 2 ms D.C. BU208, A1 500 1000 2000 1Pulse width ≤ 20 µs. Duty cycle ≤ 0.25. RBE ≤ 100 Ohms. VCE, COLLECTOR–EMITTER VOLTAGE (V) Figure 9. Maximum Forward Bias Safe Operating Area Motorola Bipolar Power Transistor Device Data 5 BU208A PACKAGE DIMENSIONS A N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO–204AA OUTLINE SHALL APPLY. C –T– E D K 2 PL 0.13 (0.005) U T Q M M Y M –Y– L V SEATING PLANE 2 H G B M T Y 1 –Q– 0.13 (0.005) M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF ––– 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC ––– 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF ––– 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC ––– 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR CASE 1–07 TO–204AA (TO–3) ISSUE Z Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 6 ◊ Motorola Bipolar Power Transistor Device Data *BU208A/D* BU208A/D