MOTOROLA Order this document by MAC8S/D SEMICONDUCTOR TECHNICAL DATA TRIACS MAC8S SERIES Designed for industrial and consumer applications for full wave control of ac loads such as appliance controls, heater controls, motor controls, and other power switching applications. TRIACS 8 AMPERES RMS 400 THRU 800 VOLTS Silicon Bidirectional Thyristors • Sensitive Gate Allows Triggering by Microcontrollers and other Logic Circuits • High Immunity to dv/dt — 25 V/ms Minimum at 110_C MT2 • High Commutating di/dt — 8.0 A/ms Minimum at 110_C • Minimum and Maximum Values of IGT, VGT and IH Specified for ease of Design • On-State Current Rating of 8 Amperes RMS at 70_C • High Surge Current Capability — 70 Amperes • Blocking Voltage to 800 Volts MT1 MT2 G • Rugged, Economical TO220AB Package CASE 221A–06 (TO-220AB) STYLE 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Peak Repetitive Off-State Voltage (1) (TJ = –40 to 110°C, Sine Wave, 50 to 60Hz, Gate Open) Value VDRM 400 600 800 MAC8SD MAC8SM MAC8SN On-State RMS Current (Full Cycle Sine Wave, 60Hz, TJ = 70°C) Peak Non-repetitive Surge Current (One Half Cycle, 60Hz, TJ = 110°C) Circuit Fusing Consideration (t = 8.3 ms) Peak Gate Power (Pulse Width ≤ 1.0µs, TC = 70°C) Average Gate Power (t = 8.3ms, TC = 70°C) Operating Junction Temperature Range Storage Temperature Range Unit Volts IT(RMS) 8 A ITSM 70 A I2t 20 A2sec PGM 16 Watts PG(AV) 0.35 Watts TJ – 40 to +110 °C Tstg – 40 to +150 °C RθJC RθJA 2.2 62.5 TL 260 THERMAL CHARACTERISTICS °C/W Thermal Resistance — Junction to Case — Junction to Ambient Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 5 Seconds °C (1) VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. REV 0 Motorola Thyristor Motorola, Inc. 1995 Device Data 1 Data Sheets ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max — — — — 0.01 2.0 — — 1.85 .8 .8 .8 2.0 3.0 3.0 5.0 5.0 5.0 1.0 3.0 10 2.0 2.0 2.0 5.0 10 5.0 15 20 15 0.45 0.45 0.45 0.62 0.60 0.65 1.5 1.5 1.5 Unit OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, Gate Open) ON CHARACTERISTICS Peak On-State Voltage* (ITM = IDRM mA TJ = 25°C TJ = 110°C 11A) VTM Continuous Gate Trigger Current (VD = 12 V, RL = 100Ω) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) Hold Current (VD = 12V, Gate Open, Initiating Current = Volts IGT 150mA) mA IH Latching Current (VD = 24V, IG = 5mA) MT2(+), G(+) MT2(–), G(–) MT2(+), G(–) mA IL Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100Ω) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) mA VGT Volts DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off–State Voltage (VD = 400V, ITM = 3.5A, Commutating dv/dt = 10Vm/sec, Gate Open, TJ = 110_C, f= 500 Hz, Snubber: CS = 0.01 mF, RS = 15W, see Figure 16.) (dv/dt)c 8.0 10 — A/ms Critical Rate of Rise of Off-State Voltage (VD = Rate VDRM, Exponential Waveform, RGK = 510W, TJ = 110°C) dv/dt 25 75 — V/ms T C , MAXIMUM ALLOWABLE CASE TEMPERATURE ( °C) * Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. P(AV), AVERAGE POWER DISSIPATION (WATTS) 110 100 a = 30 and 60° 90 α α 80 a = CONDUCTION ANGLE 90° 70 180° DC 60 0 2 4 6 8 10 IT(RMS), RMS ON–STATE CURRENT (AMPS) 12 20 DC 180° 120° α α 15 a = CONDUCTION ANGLE 90° 60° 10 a = 30° 5 0 0 2 4 6 8 10 IT(RMS), RMS ON–STATE CURRENT (AMPS) 12 Figure 2.0 Maximum On–State Power Dissipation Figure 1.0 RMS Current Derating Data Sheets 25 2 Motorola Thyristor Device Data 100 R(t) , TRANSIENT THERMAL RESISTANCE (NORMALIZED) I T, INSTANTANOUS ON–STATE CURRENT (AMPS) Typical @ TJ = 25 °C Maximum @ TJ = 110°C 10 1 0.1 0.5 Maximum @ TJ = 25 °C 1 2.5 3 3.5 4.5 1.5 2 4 5 VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS) 5.5 6 1 ZqJC(t) = RqJC(t) r(t) 0.1 0.01 0.1 10 100 t, TIME (ms) 1@10 4 1000 Figure 4.0 Transient Thermal Response Figure 3.0 On–State Characteristics 25 I L , LATCHING CURRENT (mA) 10 I H , HOLDING CURRENT (mA) 1 8 6 MT2 NEGATIVE 4 MT2 POSITIVE 2 20 15 10 Q3 5 Q1 0 –40 –25 –10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) 95 0 –40 110 5 20 35 50 65 80 95 110 Figure 6.0 Typical Latching Current Versus Junction Temperature 14 1 V GT, GATE TRIGGER VOLTAGE (VOLTS) IGT, GATE TRIGGER CURRENT (mA) –10 TJ, JUNCTION TEMPERATURE (°C) Figure 5.0 Typical Holding Current Versus Junction Temperature 12 10 8 Q3 6 Q2 4 2 Q1 0 –40 –25 –25 –10 5 20 35 50 65 TJ, JUNCTION TEMPERATURE (°C) 80 95 110 Figure 7.0 Typical Gate Trigger Current Versus Junction Temperature Motorola Thyristor Device Data Q1 0.9 0.8 Q3 0.7 Q3 0.6 0.5 Q2 Q1 0.4 0.3 –40 –25 –10 5 20 35 50 65 TJ, JUNCTION TEMPERATURE (°C) 80 95 110 Figure 8.0 Typical Gate Trigger Voltage Versus Junction Temperature 3 Data Sheets 200 130 RG – MT1 = 510W TJ = 110°C 180 STATIC dv/dt (V/mS) STATIC dv/dt (V/mS) 120 VPK = 400V 160 140 600V 800V 120 TJ = 100°C 110 110°C 100 100 90 120°C 80 60 100 200 300 400 500 600 700 800 RGK, GATE–MT1 RESISTANCE (OHMS) 900 1000 80 400 500 550 600 650 VPK, Peak Voltage (Volts) 700 750 800 Figure 10.0 Typical Exponential Static dv/dt Versus Peak Voltage, MT2(+) Figure 9.0 Typical Exponential Static dv/dt Versus Gate–MT1 Resistance, MT2(+) 130 350 120 300 VPK = 400V 110 100 STATIC dv/dt (V/mS) STATIC dv/dt (V/mS) 450 600V 90 RG – MT1 = 510W 80 TJ = 100°C 250 110°C 200 800V 70 100 105 110 115 TJ, Junction Temperature (°C) 120 120°C RG – MT1 = 510W 150 100 125 400 450 500 550 600 650 VPK, Peak Voltage (Volts) 700 750 800 Figure 12.0 Typical Exponential Static dv/dt Versus Peak Voltage, MT2(–) Figure 11.0 Typical Exponential Static dv/dt Versus Junction Temperature, MT2(+) 350 300 VPK = 400V 300 STATIC dv/dt (V/mS) STATIC dv/dt (V/mS) 250 VPK = 400V 250 600V 200 800V 150 600V 200 800V 150 RG – MT1 = 510W 100 50 100 105 110 115 TJ, Junction Temperature (°C) TJ = 110°C 120 125 Figure 13.0 Typical Exponential Static dv/dt Versus Junction Temperature, MT2(–) Data Sheets 100 100 200 300 700 800 900 400 500 600 RGK, GATE–MT1 RESISTANCE (OHMS) 1000 Figure 14.0 Typical Exponential Static dv/dt Versus Gate–MT1 Resistance, MT2(–) 4 Motorola Thyristor Device Data (dv/dt)c , CRITICAL RATE OF RISE OF COMMUTATING VOLTAGE (V/ms) 100 VPK = 400V 90°C 10 100°C f= 1 2 tw tw (di/dt)c = VDRM 6f ITM 1000 110°C 1 1 5 10 15 20 25 30 (di/dt)c, CRITICAL RATE OF CHANGE OF COMMUTATING CURRENT (A/ms) Figure 15.0 Critical Rate of Rise of Commutating Voltage MEASURE I TRIGGER TRIGGER CONTROL CHARGE 1N4007 20 mHY LL 400 VRMS ADJUST FOR ITM, 60 Hz VAC CHARGE CONTROL 5 mF NON-POLAR CL RS CS 2 1N914 51 G 15W – 0.01 mF + ADJUST FOR dv/dt(c) 400 V 1 Note: Component values are for verification of rated (dv/dt)c. See AN1048 for additional information. Figure 16.0 Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Voltage Motorola Thyristor Device Data 5 Data Sheets NOTES Data Sheets 6 Motorola Thyristor Device Data NOTES Motorola Thyristor Device Data 7 Data Sheets PACKAGE DIMENSIONS –T– B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. SEATING PLANE C F T S 4 A Q 1 2 3 U H K STYLE 4: PIN 1. 2. 3. 4. Z L R V J G D CASE 221A–06 (TO-220AB) N MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 Motorola reserves the right to make changes without further notice to any products herein. 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