PHILIPS BLV2046

DISCRETE SEMICONDUCTORS
DATA SHEET
BLV2046
UHF power transistor
Product specification
1997 Aug 22
Philips Semiconductors
Product specification
UHF power transistor
BLV2046
FEATURES
PINNING - SOT460A
• Emitter ballasting resistors for optimum temperature
profile
PIN
• Gold metallization ensures excellent reliability
• Internal input and output matching to achieve high
power gain and collector efficiency for an easy design of
wideband circuits.
SYMBOL
1
c
collector
2
b
base
3
e
emitter, connected to flange
1
handbook, halfpage
APPLICATIONS
DESCRIPTION
• Common emitter class-AB operation in PCN and PCS
applications in the 1800 to 1990 MHz frequency range.
3
2
Top view
DESCRIPTION
NPN silicon planar transistor in a 2-lead SOT460A flange
package with a ceramic cap. The emitter is connected to
the flange.
MBK093
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common emitter test circuit
MODE OF
OPERATION
f
(MHz)
VCE
(V)
PL
(W)
Gp
(dB)
ηC
(%)
dim
(dBc)
CW, class-AB
1 990
26
50
≥7.5
≥40
−
2-tone, class-AB
f1 = 1990.0; f2 = 1990.1
26
50 (PEP)
typ. 8
typ. 33
typ. −30
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location
of the user. It must never be thrown out with the general or domestic waste.
1997 Aug 22
2
Philips Semiconductors
Product specification
UHF power transistor
BLV2046
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN. MAX. UNIT
VCBO
collector-base voltage
open emitter
−
60
V
VCEO
collector-emitter voltage
open base
−
27
V
VEBO
emitter-base voltage
open collector
−
2.5
V
IC
collector current (DC)
−
12
A
IC(AV)
average collector current
−
12
A
Ptot
total power dissipation
−
195
W
Tstg
storage temperature
−65
+150
°C
Tj
operating junction temperature
−
200
°C
Tmb = 25 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-mb
thermal resistance from junction to mounting-base
Rth mb-h
thermal resistance from mounting-base to heatsink
MAX.
UNIT
0.9
K/W
0.2
K/W
Pdis = 195 W; Tmb = 25 °C
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
65
−
−
V(BR)CBO
collector-base breakdown voltage
V(BR)CEO
collector-emitter breakdown voltage IC = 60 mA; open base
27
−
−
V
V(BR)EBO
emitter-base breakdown voltage
IE = 20 mA; IB = 30 mA; open collector 3.2
−
−
V
ICBO
collector-base leakage current
VCB = 40 V; IE = 0
−
4
mA
hFE
DC current gain
VCE = 5 V; IC = 1 A
20
−
100
Cc
collector capacitance
VCB = 26 V; IE = ie = 0; f = 1 MHz;
note 1
−
60
−
pF
Cre
feedback capacitance
VCE = 26 V; IC = 0; f = 1 MHz
−
40
−
pF
IC = 20 mA; open emitter
Note
1. Die only.
1997 Aug 22
3
−
V
Philips Semiconductors
Product specification
UHF power transistor
BLV2046
APPLICATION INFORMATION
RF performance at Th = 25 °C in a common-emitter test circuit.
ηC
MODE OF
OPERATION
f
(MHz)
VCE
(V)
ICQ
(mA)
PL
(W)
Gp
(dB)
(%)
dim
(dBc)
CW class-AB
1990
26
200
50
≥7.5
≥40
−
26
200
50 (PEP)
typ. 8
typ. 33
typ. −30
2-tone class-AB f1 = 1990.0; f2 = 1990.1
Ruggedness in class-AB operation
The BLV2046 is capable of withstanding a load mismatch corresponding to VSWR = 2:1 through all phases under the
following conditions: f1 = 1990.0 MHz; f2 = 1990.1 MHz; VCE = 26 V; ICQ = 200 mA; PL = 50 W (PEP) and Th = 25 °C.
MDA208
10
Gp
Gp
(dB)
8
handbook, halfpage
PL
(W)
40
40
ηC
6
MDA209
60
50
ηC
(%)
handbook, halfpage
30
4
20
20
2
10
0
0
0
20
40
PL (W)
0
60
0
2
4
6
VCE = 26 V; ICQ = 200 mA; f = 1990 MHz.
VCE = 26 V; ICQ = 200 mA; f = 1990 MHz.
Fig.2
Fig.3
Power gain and efficiency as a function of
load power; typical values.
1997 Aug 22
4
8
PD (W)
10
Load power as a function of drive power;
typical values.
Philips Semiconductors
Product specification
UHF power transistor
BLV2046
MDA214
MDA213
10
Gp
10
Gp
handbook, halfpage
handbook, halfpage
(1)
(dB)
8
(1)
(dB)
(2)
(2)
8
(3)
(3)
6
6
(4)
(4)
4
4
2
2
0
10−3
10−2
10−1
VCE = 26 V; f = 1990 MHz.
(1) ICQ = 600 mA.
(2) ICQ = 400 mA.
Fig.4
(3)
(4)
1
PD (W)
0
10
0
10
102
PL (PEP) (W)
VCE = 26 V; f1 = 1990 MHz; f2 = 1990.1 MHz.
(3) ICQ = 200 mA.
(1) ICQ = 600 mA.
(4) ICQ = 100 mA.
(2) ICQ = 400 mA.
ICQ = 200 mA.
ICQ = 100 mA.
Power gain expansion as a function of drive
power; typical values.
Fig.5
MDA215
0
1
Power gain expansion as a function of load
power; typical values.
MDA216
0
handbook, halfpage
handbook, halfpage
d3
(dBc)
dim
(dBc)
−10
−20
−20
(1)
d3
(2)
−30
−40
(3)
−40
−50
d5
(4)
−60
0
20
40
PL (PEP) (W)
60
0
20
40
PL (PEP) (W)
60
VCE = 26 V; f1 = 1990 MHz; f2 = 1990.1 MHz.
(3) ICQ = 400 mA.
(1) ICQ = 100 mA.
(4) ICQ = 600 mA.
(2) ICQ = 200 mA.
VCE = 26 V; ICQ = 200 mA; f1 = 1990 MHz; f2 = 1990.1 MHz.
Fig.6
Fig.7
Intermodulation distortion as a function of
load power; typical values.
1997 Aug 22
5
Intermodulation distortion as a function of
load power; typical values.
Philips Semiconductors
Product specification
UHF power transistor
BLV2046
handbook, full pagewidth VCE (+26 V)
C9
C10
VCE (+26 V)
R1
TR1
C5
C4
R2
R3
P1
C11
C7
C6
D1
L2
F1
,,,,,,,,
,,,,,,,
,,
,,,,,
,,,
,,,,,,,
,,,,,,,,,,,,,,,,,
,,,,,,,
D2
L8
S3
input
50 Ω
S1
L4
L3
L9
L1
T1
L10
L11
L14
L7
L6
L5
L13
L12
L15
output
50 Ω
C8
C1
MGK450
C3
S2
S4
C2
Fig.8 Class-AB test circuit for 1990 MHz.
List of components
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
C1, C8
multilayer ceramic chip capacitor; note 1
30 pF
C2, C3
trimmer capacitor
0.4 to 2.5 pF
C4, C5
feedthrough bypass capacitor
1500 pF
C6, C7
tantal SMD capacitor
10 µF; 35 V
C9
electrolytic capacitor
10 µF; 100 V
C10
multilayer ceramic chip capacitor
22 nF
C11
electrolytic capacitor
10 µF; 63 V
L1
5 turns enamelled 0.5 mm copper wire
int. dia. = 4 mm;
length = 6.7 mm
L2
2 turns enamelled 0.5 mm copper wire
int. dia. = 4 mm;
length = 2.7 mm
L3
stripline; note 2
48.8 Ω
2222 629 08223
5.34 × 0.59 mm
L4
stripline; note 2
17 Ω
1.2 × 3.23 mm
L5
stripline; note 2
48.8 Ω
2.93 × 0.59 mm
1997 Aug 22
6
CATALOGUE NO.
Philips Semiconductors
Product specification
UHF power transistor
COMPONENT
L6
BLV2046
DESCRIPTION
VALUE
stripline; note 2
DIMENSIONS
48.8 Ω
6.63 × 0.59 mm
L7
stripline; note 2
17.1 Ω
1.6 × 3.2 mm
L8
stripline; note 2
6.8 Ω
6 × 9.6 mm
L9
stripline; note 2
6.8 Ω
9.11 × 9.6 mm
L10
stripline; note 2
16.6 Ω
5.09 × 3.32 mm
L11
stripline; note 2
10.9 Ω
0.85 × 5.59 mm
L12
stripline; note 2
31.9 Ω
9.26 × 1.3 mm
L13
stripline; note 2
48.8 Ω
0.24 × 0.59 mm
L14
stripline; note 2
11.9 Ω
1.15 × 5.04 mm
L15
stripline; note 2
48.8 Ω
2.5 × 0.59 mm
S1
stub; note 2
2.4 × 2.17 mm
S2
stub; note 2
2.4 × 3.04 mm
S3
stub; note 2
0.9 × 8.63 mm
S4
stub; note 2
0.9 × 7.29 mm
T1
taper; note 2
1.3 × 2.7 / 3.2 mm
F1
grade 4B1 ferrite bead
P1
linear potentiometer
5 kΩ
R1
resistor
100 Ω, 3 W
R2
resistor
1 kΩ, 0.25 W
R3
resistor
56 Ω, 3 W
TR1
transistor
BD241C
D1
diode, note 3
BY239
D2
diode, note 4
BY239
CATALOGUE NO.
4330 030 43081
Notes
1. American Technical Ceramics type 100A (C1), type 100B (C8) or capacitor of same quality.
2. The striplines are on a double copper-clad PCB with duroid 6 010 dielectric (εr = 10.2); thickness 0.635 mm.
3. In thermal contact with TR1.
4. In thermal contact with DUT.
1997 Aug 22
7
Philips Semiconductors
Product specification
UHF power transistor
BLV2046
30
handbook, full pagewidth
30
40
+VBE
+VCE
C4
F1
C6
input
50 Ω
C5
C7
output
50 Ω
L2
L1
C1
C8
C3
C2
MGK451
Dimensions in mm.
The components are situated on one side of the copper-clad board, the other side is unetched and serves as a ground plane. Earth connections from the
component side to the ground plane are made by through metallization.
Fig.9 Component layout and printed-circuit board for 1990 MHz class-AB test circuit.
1997 Aug 22
8
Philips Semiconductors
Product specification
UHF power transistor
BLV2046
MDA210
3
MDA211
4
handbook, halfpage
handbook, halfpage
ZL
(Ω)
ri
Zi
RL
(Ω)
2
2
xi
0
1
−2
XL
0
1800
1850
1900
1950
f (MHz)
−4
1800
2000
1850
1900
1950
f (MHz)
2000
VCE = 26 V; ICQ = 400 mA; PL = 50 W; Tmb = 25 °C.
VCE = 26 V; ICQ = 400 mA; PL = 50 W; Tmb = 25 °C.
Fig.11 Load impedance as a function of the
frequency (series components); typical
values.
Fig.10 Input impedance as function of the frequency
(series components); typical values.
MDA212
16
handbook, halfpage
Gp
(dB)
12
handbook, halfpage
8
Zi
ZL
4
0
1800
1850
1900
1950
MBA451
2000
f (MHz)
VCE = 26 V; ICQ = 200 mA; PL = 50 W; Tmb = 25 °C.
Fig.12 Gain as a function of the frequency;
typical values.
1997 Aug 22
Fig.13 Definition of transistor impedance.
9
Philips Semiconductors
Product specification
UHF power transistor
BLV2046
PACKAGE OUTLINE
Flanged hermetic ceramic package; 2 mounting holes; 2 leads
SOT460A
D
A
F
3
U1
B
q
c
C
1
L
U2
E
w1 M A B
p
A
L
2
w2 M C
b
0
5
Q
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
D
E
F
L
p
Q
q
U1
U2
w1
w2
mm
5.39
4.49
9.78
9.52
0.16
0.07
12.45
11.68
6.94
6.22
1.66
1.39
6.10
5.33
3.28
3.02
2.37
1.95
17.98
22.99
22.73
6.43
6.17
0.51
1.02
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
SOT460A
1997 Aug 22
EUROPEAN
PROJECTION
ISSUE DATE
97-05-23
10
Philips Semiconductors
Product specification
UHF power transistor
BLV2046
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Aug 22
11
Philips Semiconductors – a worldwide company
Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,
Tel. +61 2 9805 4455, Fax. +61 2 9805 4466
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010,
Fax. +43 160 101 1210
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773
Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 689 211, Fax. +359 2 689 102
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Colombia: see South America
Czech Republic: see Austria
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,
Tel. +45 32 88 2636, Fax. +45 31 57 0044
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615800, Fax. +358 9 61580920
France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex,
Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 23 53 60, Fax. +49 40 23 536 300
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,
Tel. +30 1 4894 339/239, Fax. +30 1 4814 240
Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Indonesia: see Singapore
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,
Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
South America: Rua do Rocio 220, 5th floor, Suite 51,
04552-903 São Paulo, SÃO PAULO - SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 829 1849
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 3 301 6312, Fax. +34 3 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 632 2000, Fax. +46 8 632 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2686, Fax. +41 1 481 7730
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
© Philips Electronics N.V. 1997
SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
127067/00/01/pp12
Date of release: 1997 Aug 22
Document order number:
9397 750 01823