Central CMHD3595 TM Semiconductor Corp. LOW LEAKAGE SILICON DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHD3595 is a Silicon Diode, manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high conductance applications requiring low leakage. Marking Code is C95. SOD-123 CASE MAXIMUM RATINGS: (TA=25°C) 150 UNITS V Peak Working Reverse Voltage SYMBOL VRRM VRWM 125 V Average Forward Current IO 150 mA Forward Steady-State Current IF 225 mA Recurrent Peak Forward Current 600 mA 500 mA Peak Forward Surge Current (1.0µs pulse) if IFSM IFSM 4.0 A Power Dissipation PD 400 mW -65 to +150 °C 312.5 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) MIN MAX SYMBOL TEST CONDITIONS UNITS Peak Repetitive Reverse Voltage Peak Forward Surge Current (1.0s pulse) Operating and Storage Junction Temperature TJ,Tstg Thermal Resistance ΘJA BVR IR IR IR IR VF VF VF VF VF VF CT trr IR=100µA VR=125V VR=125V, TA=125°C VR=125V, TA=150°C VR=30V, TA=125°C IF=1.0mA IF=5.0mA IF=10mA IF=50mA IF=100mA IF=200mA VR=0, f=1.0MHz VR=3.5V, If=10mA, RL=1.0kΩ 150 0.54 0.62 0.65 0.75 0.79 0.83 1.0 500 3.0 300 0.69 0.77 0.80 0.88 0.92 1.00 8.0 3.0 V nA nA µA nA V V V V V V pF µs R2 ( 2-November 2001) Central TM CMHD3595 Semiconductor Corp. LOW LEAKAGE SILICON DIODE SOD-123 CASE - MECHANICAL OUTLINE D A 1 B E G C F 2 H R3 SYMBOL A B C D E F G H DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0.037 0.053 0.95 1.35 0.005 0.12 0.008 0.20 0.055 0.071 1.40 1.80 0.098 0.112 2.50 2.84 0.140 0.154 3.55 3.90 0.010 0.25 0.020 0.028 0.50 0.70 SOD-123 (REV:R3) LEAD CODE: 1) Cathode 2) Anode MARKING CODE: C95 R2 ( 2-November 2001)