MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR20F MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE CR20F OUTLINE DRAWING 8 19 Dimensions in mm 2 3 (22) 3 3 1 1.6 3.5 φ3.5 1 25.5 2 φ14 11 2 4.4 TYPE NAME 2.1 3 14 1 CATHODE 2 ANODE 3 GATE 36 φ1.5 M6×1 LOCK WASHER NUT SOLDERLESS TERMINAL • IT (AV) ......................................................................... 20A • VDRM ............................. 400V/600V/800V/1000V/1200V • IGT ..........................................................................50mA TELEGRAPH WIRE 2.63~6.64mm2 Note: Mica washer and spacer are provided only upon request. APPLICATION DC motor control, electric furnace control, static switches, DC supply MAXIMUM RATINGS Symbol Parameter Voltage class 8 12 16 20 24 Unit VRRM Repetitive peak reverse voltage 400 600 800 1000 1200 V VRSM Non-repetitive peak reverse voltage 480 720 960 1200 1350 V VR (DC) DC reverse voltage 320 480 640 800 960 V VDRM Repetitive peak off-state voltage 400 600 800 1000 1200 V VDSM Non-repetitive peak off-state voltage 480 720 980 1000 1200 V VD (DC) DC off-state voltage 320 480 640 800 960 V Ratings Unit 31.5 A 20 A 60Hz sine half wave 1 full cycle, peak value, non-repetitive 300 A I2t for fusing Value corresponding to 1 cycle of half wave 60Hz, surge on-state current 380 A2s di/dt Critical rate of rise of on-state current VD=1/2VDRM, ITM=60A, IG=0.1A. T j=25°C, f=60Hz 100 A/µs PGM Peak gate power dissipation 5.0 W PG (AV) Average gate power dissipation 0.5 W VFGM Peak gate forward voltage 10 V VRGM Peak gate reverse voltage 5 V IFGM Peak gate forward current 2 Tj Junction temperature –30 ~ +125 Tstg Storage temperature –30 ~ +125 Symbol Conditions Parameter IT (RMS) RMS on-state current IT (AV) Average on-state current Commercial frequency, sine half wave, 180° conduction, Tc =86°C ITSM Surge on-state current I2t — Mounting torque — Weight 30 2.94 Typical value 20 A °C °C kg·cm N·m g Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR20F MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol Parameter Limits Test conditions Min. Typ. Max. Unit IRRM Repetitive peak reverse current Tj=125°C, V RRM applied — — 4.0 mA IDRM Repetitive peak off-state current Tj=125°C, V DRM applied — — 4.0 mA VTM On-state voltage Tc=25°C, ITM=60A, Instantaneous value — — 1.8 V dv/dt Critical-rate of rise of off-state voltage Tj=125°C, VD=2/3VDRM 50 — — V VGT Gate trigger voltage Tj=25°C, VD=6V, IT=0.5A — — 3.0 V VGD Gate non-trigger voltage Tj=125°C, VD=1/2VDRM 0.25 — — V IGT Gate trigger current Tj=25°C, VD=6V, IT=0.5A — — 50 mA tgt Turn-on time Tc=25°C, VD =100V, IT =15A, IG=0.1A — — 10 µs R th (j-c) Thermal resistance Junction to case — — 1.0 °C/W R th (c-f) Contact thermal resistance Case to fin — — 0.4 °C/W MAXIMUM ON-STATE CHARACTERISTICS 103 7 5 Tc = 25°C 3 2 102 7 5 3 2 125°C 101 7 5 3 2 100 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 ON-STATE VOLTAGE (V) RATED SURGE ON-STATE CURRENT 320 SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) PERFORMANCE CURVES 280 240 200 160 120 80 40 0 100 2 3 4 5 7 101 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR20F MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE GATE VOLTAGE (V) 3 2 VFGM = 10V PGM = 5W 101 7 5 VGT = 3V PG(AV) = 3 IGT 2 0.5W Tj = 100 IFGM = 125°C 7 2A 25°C 5 30°C 3 2 VGD = 0.25V 10–1 7 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 AVERAGE POWER DISSIPATION (W) GATE CHARACTERISTICS MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE HALF WAVE) 50 45 40 35 20 AMBIENT TEMPERATURE (°C) CASE TEMPERATURE (°C) θ 360° RESISTIVE, INDUCTIVE LOADS 100 90 80 θ = 30° 60° 90° 120° 180° 70 60 50 0 4 8 12 16 20 24 28 5 0 20 15 θ θ 360° 0 4 8 12 4 8 12 16 RESISTIVE LOADS 16 20 24 28 32 AVERAGE ON-STATE CURRENT (A) 360° PAINTED BLACK AND GREASED RESISTIVE, INDUCTIVE LOADS NATURAL θ = 180° CONVECTION 120 100 80 60 θ = 90° 40 20 0 4 8 12 16 20 24 28 32 AVERAGE ON-STATE CURRENT (A) ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) 130 CASE TEMPERATURE (°C) AVERAGE POWER DISSIPATION (W) 25 0 0 RESISTIVE, INDUCTIVE LOADS 20 24 28 32 ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160 BX40-06 FIN 120 120 t3 140 θ ALUMINUM PLATE 0 32 MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE FULL WAVE) 40 120° 180° 90° 35 60° 30 θ = 30° 5 360° 10 AVERAGE ON-STATE CURRENT (A) 10 θ 15 AVERAGE ON-STATE CURRENT (A) ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 130 110 60° 120° 180° 25 GATE CURRENT (mA) 120 θ = 30° 30 90° 120 θ 110 360° 100 RESISTIVE LOADS θ 90 80 θ = 30° 60° 90° 120° 180° 70 60 50 0 4 8 12 16 20 24 28 32 AVERAGE ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR20F MEDIUM POWER USE ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) 160 BX40-06 FIN 120 120 t3 140 θ θ ALUMINUM PLATE PAINTED BLACK 360° 120 AND GREASED RESISTIVE 100 LOADS NATURAL 80 CONVECTION 60 θ = 180° 40 90° 20 0 AVERAGE POWER DISSIPATION (W) AMBIENT TEMPERATURE (°C) NON-INSULATED TYPE, GLASS PASSIVATION TYPE 0 4 8 12 16 20 24 28 32 MAXIMUM AVERAGE POWER DISSIPATION (RECTANGULAR WAVE) 50 270° DC 180° 45 120° 40 90° 35 60° 25 20 AMBIENT TEMPERATURE (°C) 360° 100 90 80 θ = 30° 70 90° 180° 270° 60° 120° DC 60 5 0 0 5 10 15 20 25 30 35 0 5 10 15 20 RESISTIVE, INDUCTIVE LOADS 25 30 35 40 ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) 160 BX40-06 FIN 120 120 t3 140 θ ALUMINUM PLATE PAINTED BLACK 360° 120 AND GREASED RESISTIVE, 100 INDUCTIVE AVERAGE ON-STATE CURRENT (A) θ = 90° 60 DC 40 180° 20 0 40 LOADS NATURAL CONVECTION 80 0 5 10 15 20 25 30 35 40 AVERAGE ON-STATE CURRENT (A) 20 CR20F BLOCK FIN BX40-06 OUTLINE DRAWING (Unit: mm) 2−φ6.5 M6×1 3 NAME PLATE NAME PLATE (38.5) 99 115 125 30 φ9.5 19.5 60 120 50 50 16 CASE TEMPERATURE (°C) θ RESISTIVE, INDUCTIVE LOADS 360° 10 AVERAGE ON-STATE CURRENT (A) ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) 130 110 θ 15 AVERAGE ON-STATE CURRENT (A) 120 θ = 30° 30 40 Feb.1999