June 1996 NDT452AP P-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and DC motor control. -5A, -30V. RDS(ON) = 0.065Ω @ VGS = -10V RDS(ON) = 0.1Ω @ VGS = -4.5V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ________________________________________________________________________________ D G Absolute Maximum Ratings Symbol Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current - Continuous D D S (Note 1a) Maximum Power Dissipation NDT452AP Units -30 V ±20 V -5 A - 15 (Note 1a) 3 (Note 1b) 1.3 (Note 1c) TJ,TSTG S T A = 25°C unless otherwise noted - Pulsed PD G Operating and Storage Temperature Range W 1.1 -65 to 150 °C THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 42 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 12 °C/W * Order option J23Z for cropped center drain lead. © 1997 Fairchild Semiconductor Corporation NDT452AP Rev. B1 Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min -30 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA IDSS Zero Gate Voltage Drain Current VDS = -24 V, VGS = 0 V V TJ = 55°C -1 µA -10 µA IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS= 0 V -100 nA -2.8 V ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA RDS(ON) Static Drain-Source On-Resistance VGS = -10 V, ID = -5.0 A -1 TJ = 125°C -0.7 TJ = 125°C VGS = -4.5 V, ID = -4.3 A ID(on) gFS On-State Drain Current Forward Transconductance VGS = -10 V, VDS = -5 V -15 VGS = -4.5 V, VDS = -5 V -5 -1.6 -1.2 -2.2 0.052 0.065 0.075 0.13 0.085 0.1 Ω A VDS = -10 V, ID = -5.0 A 7 S VDS = -15 V, VGS = 0 V, f = 1.0 MHz 690 pF 430 pF 160 pF DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 2) tD(on) Turn - On Delay Time tr Turn - On Rise Time tD(off) Turn - Off Delay Time tf Turn - Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = -10 V, ID = -1 A, VGEN = -10 V, RGEN = 6 Ω VDS = -10 V, ID = -5.0 A, VGS = -10 V 9 20 ns 20 30 ns 40 50 ns 19 40 ns 22 30 nC 3.2 nC 5.2 nC NDT452AP Rev. B1 Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units -2.5 A -0.85 -1.2 V 100 ns DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -2.5 A trr Reverse Recovery Time VGS = 0 V, IF = -2.5 A, dIF/dt = 100 A/µs (Note 2) Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. PD (t ) = T J−TA R θJA(t ) = T J−TA R θJC+RθCA(t ) = I 2D (t ) × RDS(ON ) TJ Typical RθJA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment: a. 42oC/W when mounted on a 1 in2 pad of 2oz copper. b. 95oC/W when mounted on a 0.066 in2 pad of 2oz copper. c. 110oC/W when mounted on a 0.0123 in2 pad of 2oz copper. 1a 1b 1c Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. NDT452AP Rev. B1 Typical Electrical Characteristics -20 3 -15 -5.0 -4.5 R DS(on), NORMALIZED ID , DRAIN-SOURCE CURRENT (A) -6.0 -4.0 -10 -3.5 -5 -3.0 DRAIN-SOURCE ON-RESISTANCE VGS = -10V 0 0 -1 -2 -3 V DS , DRAIN-SOURCE VOLTAGE (V) VGS = -3.5V 2.5 - 4.0 -4.5 2 -5.0 1.5 -6.0 -10 1 0.5 -4 0 Figure 1. On-Region Characteristics. -20 V GS = -10V V GS = -10V R DS(on), NORMALIZED 1.4 1.2 1 0.8 0.6 -50 DRAIN-SOURCE ON-RESISTANCE R DS(ON), NORMALIZED -16 2 I D = -5.0A 1.5 TJ = 125°C 25°C 1 -55°C 0.5 -25 0 25 50 75 100 T , JUNCTION TEMPERATURE (°C) 125 150 0 -4 I J D -8 -12 , DRAIN CURRENT (A) -16 -20 Figure 4. On-Resistance Variation with Drain Current and Temperature. Figure 3. On-Resistance Variation with Temperature. 1.2 V DS = -10V T J = -55°C 125°C V th , NORMALIZED -15 25°C -10 -5 0 -1 -2 -3 -4 -5 VGS , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. -6 GATE-SOURCE THRESHOLD VOLTAGE -20 I D , DRAIN CURRENT (A) -8 -12 I D , DRAIN CURRENT (A) Figure 2. On-Resistance Variation with Gate Voltage and Drain Current. 1.6 DRAIN-SOURCE ON-RESISTANCE -4 V DS = VGS 1.1 I D = -250µA 1 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (°C) 125 150 Figure 6. Gate Threshold Variation with Temperature. NDT452AP Rev. B1 Typical Electrical Characteristics 20 5 1.06 1.04 1.02 1 0.98 0.96 0.94 -50 -25 V GS = 0V 10 I D = -250µA -I S , REVERSE DRAIN CURRENT (A) BV DSS , NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE 1.1 1.08 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (°C) 125 150 TJ = 125°C 1 25°C -55°C 0.1 0.01 0.001 0 0.4 0.8 1.2 1.6 -VSD , BODY DIODE FORWARD VOLTAGE (V) Figure 8. Body Diode Forward Voltage Variation with Current and Temperature. Figure 7. Breakdown Voltage Variation with Temperature. 10 2000 , GATE-SOURCE VOLTAGE (V) ID = -5.0A C iss C oss 500 300 f = 1 MHz C rss VDS = -5V -10V -20V 8 6 4 2 -V V GS = 0 V GS CAPACITANCE (pF) 1000 200 2 100 0.1 0.2 0.5 1 2 5 10 30 0 0 5 10 15 Q g , GATE CHARGE (nC) -V DS , DRAIN TO SOURCE VOLTAGE (V) -VDD ton t d(on) t off tr RL t d(off) tf 90% 90% V OUT D VGS 25 Figure 10. Gate Charge Characteristics. Figure 9. Capacitance Characteristics. V IN 20 VOUT R GEN 10% 10% DUT G 90% S V IN 50% 50% 10% PULSE WIDTH Figure 11. Switching Test Circuit. INVERTED Figure 12. Switching Waveforms. NDT452AP Rev. B1 Typical Thermal Characteristics 3.5 TJ = -55°C VDS = -10V 9 STEADY-STATE POWER DISSIPATION (W) g FS, TRANSCONDUCTANCE (SIEMENS) 12 25°C 125°C 6 3 0 0 -4 -8 -12 I D , DRAIN CURRENT (A) -16 -20 2.5 2 1.5 1b 1c 1 4.5"x5" FR-4 Board o TA = 2 5 C Still Air 0.5 0 0.2 0.4 0.6 0.8 2oz COPPER MOUNTING PAD AREA (in 2 ) 1 Figure 14. SOT-223 Maximum Steady- tate Power Dissipation versus Copper Mounting Pad Area. Figure 13. Transconductance Variation with Drain Current and Temperature. 6 50 20 10 1a 5 -I D , DRAIN CURRENT (A) I D , STEADY-STATE DRAIN CURRENT (A) 1a 3 4 1b 1c 3 4.5"x5" FR-4 Board TA = 2 5 o C 5 RD S(O N) 10 1 ms 0m s 1s 10s VGS = -10V DC SINGLE PULSE 0.1 0.05 us s R θJ A = See Note 1c T A = 25°C 2 Figure 15. Maximum Steady-State Drain Current versus Copper Mounting Pad Area. 1m 0.5 VG S = - 1 0 V 0.2 0.4 0.6 0.8 2oz COPPER MOUNTING PAD AREA (in 2 ) 100 IT 10 Still Air 0 LIM 1 0.01 0.1 0.2 0.5 1 2 5 10 - V DS , DRAIN-SOURCE CURRENT (V) 30 50 Figure 16. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 0.5 D = 0.5 0.2 0.2 0.1 0.1 0.05 0.05 0.02 0.02 0.01 R JA (t) = r(t) * R JA θ θ R JA = See Note 1 c θ P(pk) 0.01 t1 0.005 (t) θJA Duty Cycle, D = t 1 / t 2 Single Pulse 0.002 0.001 0.0001 t2 TJ - TA = P * R 0.001 0.01 0.1 t 1 , TIME (sec) 1 10 100 300 Figure 17. Transient Thermal Response Curve. Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change depending on the circuit board design. NDT452AP Rev. B1