FGH30N6S2 / FGP30N6S2 / FGB30N6S2 600V, SMPS II Series N-Channel IGBT General Description Features The FGH30N6S2, FGP30N6S2, and FGB30N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential. SMPS II LGC devices have been specially designed for: • 100kHz Operation at 390V, 14A • • • • • • • 200kHZ Operation at 390V, 9A • 600V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . 90ns at TJ = 125oC • Low Gate Charge . . . . . . . . . 23nC at VGE = 15V • Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical • UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 150mJ Power Factor Correction (PFC) circuits Full bridge topologies Half bridge topologies Push-Pull circuits Uninterruptible power supplies Zero voltage and zero current switching circuits • Low Conduction Loss Formerly Developmental Type TA49367. Symbol Package C TO-247 E C G TO-220AB E C TO-263AB G G G E COLLECTOR (Back-Metal) COLLECTOR (Flange) E Device Maximum Ratings TC= 25°C unless otherwise noted Symbol BVCES Parameter Collector to Emitter Breakdown Voltage Ratings 600 Units V IC25 Collector Current Continuous, TC = 25°C 45 A IC110 Collector Current Continuous, TC = 110°C 20 A Collector Current Pulsed (Note 1) 108 A VGES Gate to Emitter Voltage Continuous ±20 V VGEM Gate to Emitter Voltage Pulsed ±30 V SSOA Switching Safe Operating Area at TJ = 150°C, Figure 2 ICM 60A at 600V EAS Pulsed Avalanche Energy, ICE = 20A, L = 1.3mH, VDD = 50V 150 PD Power Dissipation Total TC = 25°C 167 W Power Dissipation Derating TC > 25°C 1.33 W/°C Operating Junction Temperature Range -55 to 150 °C Storage Junction Temperature Range -55 to 150 °C TJ TSTG mJ CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. Pulse width limited by maximum junction temperature. ©2003 Fairchild Semiconductor Corporation FGH30N6S2 / FGP30N6S2 / FGB30N6S2 Rev. A1 FGH30N6S2 / FGP30N6S2 / FGB30N6S2 August 2003 Device Marking 30N6S2 Device FGH30N6S2 Package TO-247 Reel Size Tube Tape Width N/A Quantity 30 Units 30N6S2 FGP30N6S2 TO-220AB Tube N/A 50 Units 30N6S2 FGB30N6S2 TO-263AB Tube N/A 50 Units 30N6S2 FGB30N6S2T TO-263AB 330mm 24mm 800 Units Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off State Characteristics BVCES Collector to Emitter Breakdown Voltage IC = 250µA, VGE = 0 600 - - V BVECS Emitter to Collector Breakdown Voltage IC = -10mA, VGE = 0 20 - - V Collector to Emitter Leakage Current VCE = 600V TJ = 25°C - - 100 µA TJ = 125°C - - 2 mA - - ±250 nA ICES IGES Gate to Emitter Leakage Current VGE = ± 20V On State Characteristics VCE(SAT) Collector to Emitter Saturation Voltage IC = 12A, VGE = 15V TJ = 25°C - 2.0 2.5 V TJ = 125°C - 1.7 2.0 V VGE = 15V - 23 29 nC VGE = 20V - 26 33 nC 3.5 4.3 5.0 V - 6.5 8.0 V - A Dynamic Characteristics QG(ON) VGE(TH) VGEP Gate Charge IC = 12A, VCE = 300V Gate to Emitter Threshold Voltage IC = 250µA, VCE = 600V Gate to Emitter Plateau Voltage IC = 12A, VCE = 300V Switching Characteristics SSOA Switching SOA TJ = 150°C, RG = 10Ω, VGE = 15V, L = 100µH, VCE = 600V td(ON)I Current Turn-On Delay Time IGBT and Diode at TJ = 25°C, ICE = 12A, VCE = 390V, VGE = 15V, RG = 10Ω L = 200µH Test Circuit - Figure 20 trI td(OFF)I tfI Current Rise Time Current Turn-Off Delay Time Current Fall Time EON1 Turn-On Energy (Note 2) EON2 Turn-On Energy (Note 2) EOFF Turn-Off Energy (Note 3) td(ON)I Current Turn-On Delay Time trI td(OFF)I tfI Current Rise Time Current Turn-Off Delay Time Current Fall Time EON1 Turn-On Energy (Note 2) EON2 Turn-On Energy (Note 2) EOFF Turn-Off Energy (Note 3) IGBT and Diode at TJ = 125°C ICE = 12A, VCE = 390V, VGE = 15V, RG = 10Ω L = 200µH Test Circuit - Figure 20 60 - - 6 - ns - 10 - ns - 40 - ns - 53 - ns - 55 - µJ - 110 - µJ - 100 150 µJ - 11 - ns - 17 - ns - 73 100 ns - 90 100 ns - 55 - µJ - 160 200 µJ - 250 350 µJ - - 0.75 °C/W Thermal Characteristics RθJC Thermal Resistance Junction-Case NOTE: 2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in figure 20. 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. ©2003 Fairchild Semiconductor Corporation FGH30N6S2 / FGP30N6S2 / FGS30N6S2 Rev. A1 FGH30N6S2 / FGP30N6S2 / FGS30N6S2 Package Marking and Ordering Information 40 30 20 10 0 50 75 100 125 150 70 TJ = 150oC, RG = 10Ω, VGE = 15V, L = 100µH 60 50 40 30 20 10 0 0 100 TC , CASE TEMPERATURE (oC) fMAX, OPERATING FREQUENCY (kHz) 1000 TC 75oC VGE = 15V fMAX1 = 0.05 / (td(OFF)I + td(ON)I) 100 fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RØJC = 0.49oC/W, SEE NOTES TJ = 125oC, RG = 3Ω, L = 200µH, V CE = 390V 10 20 10 1 30 DUTY CYCLE < 0.5%, VGE = 10V PULSE DURATION = 250µs 14 12 10 8 6 TJ = 125oC 4 0 0.50 TJ = 25oC 0.75 1.00 1.25 1.50 1.75 2.00 2.25 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 5. Collector to Emitter On-State Voltage ©2003 Fairchild Semiconductor Corporation 700 600 350 VCE = 390V, RG = 10Ω, TJ = 125oC 10 300 8 250 ISC tSC 6 200 4 150 2 9 10 11 12 13 14 100 16 15 Figure 4. Short Circuit Withstand Time ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) 18 2 500 VGE , GATE TO EMITTER VOLTAGE (V) Figure 3. Operating Frequency vs Collector to Emitter Current TJ = 150oC 400 12 ICE, COLLECTOR TO EMITTER CURRENT (A) 16 300 Figure 2. Minimum Switching Safe Operating Area tSC , SHORT CIRCUIT WITHSTAND TIME (µs) Figure 1. DC Collector Current vs Case Temperature VGE = 10V 200 VCE, COLLECTOR TO EMITTER VOLTAGE (V) ISC, PEAK SHORT CIRCUIT CURRENT (A) 25 ICE, COLLECTOR TO EMITTER CURRENT (A) ICE , DC COLLECTOR CURRENT (A) 50 18 DUTY CYCLE < 0.5%, VGE =15V PULSE DURATION = 250µs 16 14 12 10 8 6 TJ = 150oC TJ = 125oC 4 TJ = 25oC 2 0 .5 .75 1 1.25 1.50 1.75 2.0 2.25 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 6. Collector to Emitter On-State Voltage FGH30N6S2 / FGP30N6S2 / FGS30N6S2 Rev. A1 FGH30N6S2 / FGP30N6S2 / FGS30N6S2 Typical Performance Curves 600 EOFF TURN-OFF ENERGY LOSS (µJ) EON2 , TURN-ON ENERGY LOSS (µJ) 400 RG = 10Ω, L = 500µH, VCE = 390V 350 300 TJ = 125oC, VGE = 10V, VGE = 15V 250 200 150 100 TJ = 25oC, VGE = 10V, VGE = 15V 50 0 0 5 10 15 20 RG = 10Ω, L = 500µH, VCE = 390V 500 400 TJ = 125oC, VGE = 10V, VGE = 15V 300 200 100 TJ = 25oC, VGE = 10V, VGE = 15V 0 25 0 ICE , COLLECTOR TO EMITTER CURRENT (A) Figure 7. Turn-On Energy Loss vs Collector to Emitter Current 20 25 RG = 10Ω, L = 500µH, VCE = 390V 14 35 12 10 TJ = 25oC, TJ = 125oC, VGE = 10V 8 6 4 30 25 TJ = 125oC, VGE = 15V, VGE = 10V 20 15 10 TJ = 25oC, VGE = 10V, VGE =15V TJ = 25oC, TJ = 125oC, VGE = 15V 5 2 0 15 40 RG = 10Ω, L = 500µH, VCE = 390V trI , RISE TIME (ns) td(ON)I, TURN-ON DELAY TIME (ns) 10 Figure 8. Turn-Off Energy Loss vs Collector to Emitter Current 16 0 5 10 15 20 0 25 0 ICE , COLLECTOR TO EMITTER CURRENT (A) 5 10 15 20 25 ICE , COLLECTOR TO EMITTER CURRENT (A) Figure 9. Turn-On Delay Time vs Collector to Emitter Current Figure 10. Turn-On Rise Time vs Collector to Emitter Current 90 120 RG = 10Ω, L = 500µH, VCE = 390V RG = 10Ω, L = 500µH, VCE = 390V 80 tfI , FALL TIME (ns) td(OFF) TURN-OFF DELAY TIME (ns) 5 ICE , COLLECTOR TO EMITTER CURRENT (A) 70 60 50 40 100 TJ = 125oC, VGE = 10V OR 15V 80 60 30 TJ = 25oC, VGE = 10V OR 15V 20 40 0 5 10 15 20 25 ICE , COLLECTOR TO EMITTER CURRENT (A) Figure 11. Turn-Off Delay Time vs Collector to Emitter Current ©2003 Fairchild Semiconductor Corporation 0 5 10 15 20 25 ICE , COLLECTOR TO EMITTER CURRENT (A) Figure 12. Fall Time vs Collector to Emitter Current FGH30N6S2 / FGP30N6S2 / FGS30N6S2 Rev. A1 FGH30N6S2 / FGP30N6S2 / FGS30N6S2 Typical Performance Curves (Continued) DUTY CYCLE < 0.5%, VCE = 10V PULSE DURATION = 250µs 150 125 o TJ = 25 C 100 75 50 TJ = 125oC 25 o TJ = -55 C 12 VCE = 600V 10 8 6 VCE = 400V 4 VCE = 200V 2 0 5 6 7 9 8 10 IG(REF) = 1mA, RL = 25Ω, TJ = 25oC 14 VGE, GATE TO EMITTER VOLTAGE (V) ICE, COLLECTOR TO EMITTER CURRENT (A) 16 175 11 12 13 14 15 0 16 0 2 4 6 1.2 RG = 10Ω, L = 500µH, VCE = 390V, VGE = 15V ETOTAL = EON2 + EOFF ICE = 24A 0.8 0.6 0.4 ICE = 12A 0.2 ICE = 6A 0 25 50 75 TC 150 125 100 , CASE TEMPERATURE (oC) C, CAPACITANCE (nF) 1.2 1.0 0.8 CIES 0.6 COES 0.2 CRES 10 20 30 40 50 60 70 80 90 100 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 17. Capacitance vs Collector to Emitter Voltage ©2003 Fairchild Semiconductor Corporation VCE, COLLECTOR TO EMITTER VOLTAGE (V) FREQUENCY = 1MHz 0 14 16 18 20 22 24 10 TJ = 125oC, L = 500µH, VCE = 390V, VGE = 15V ETOTAL = EON2 + EOFF ICE = 24A 1 ICE = 12A ICE = 6A 0.1 10 1.0 100 1000 Figure 16. Total Switching Loss vs Gate Resistance 1.4 0.0 12 RG, GATE RESISTANCE (Ω) Figure 15. Total Switching Loss vs Case Temperature 0.4 10 Figure 14. Gate Charge ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) Figure 13. Transfer Characteristic 1.0 8 QG , GATE CHARGE (nC) VGE , GATE TO EMITTER VOLTAGE (V) 3.5 DUTY CYCLE < 0.5%, VCE = 10V PULSE DURATION = 250µs 3.0 2.5 ICE = 24A ICE = 12A 2.0 ICE = 6A 1.5 6 7 8 9 10 11 12 13 14 15 16 VGE, GATE TO EMITTER VOLTAGE (V) Figure 18. Collector to Emitter On-State Voltage vs Gate to Emitter Voltage FGH30N6S2 / FGP30N6S2 / FGS30N6S2 Rev. A1 FGH30N6S2 / FGP30N6S2 / FGS30N6S2 Typical Performance Curves (Continued) ZθJC , NORMALIZED THERMAL RESPONSE 100 0.50 0.20 t1 0.10 10-1 PD t2 0.05 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC 0.02 0.01 SINGLE PULSE 10-2 -5 10 10-4 10-3 10-2 10-1 100 101 t1 , RECTANGULAR PULSE DURATION (s) Figure 19. IGBT Normalized Transient Thermal Impedance, Junction to Case Test Circuit and Waveforms FGP30N6S2D DIODE TA49390 90% 10% VGE EON2 EOFF L = 200mH VCE RG = 10Ω 90% + FGP30N6S2 ICE VDD = 390V - 10% td(OFF)I tfI trI td(ON)I Figure 20. Inductive Switching Test Circuit ©2003 Fairchild Semiconductor Corporation Figure 21. Switching Test Waveforms FGH30N6S2 / FGP30N6S2 / FGS30N6S2 Rev. A1 FGH30N6S2 / FGP30N6S2 / FGS30N6S2 Typical Performance Curves (Continued) Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD™ LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gatevoltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. Operating Frequency Information Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 21. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM . td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON2 and EOFF are defined in the switching waveforms shown in Figure 21. EON2 is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0) ECCOSORBD is a Trademark of Emerson and Cumming, Inc. ©2003 Fairchild Semiconductor Corporation FGH30N6S2 / FGP30N6S2 / FGS30N6S2 Rev. A1 FGH30N6S2 / FGP30N6S2 / FGS30N6S2 Handling Precautions for IGBTs TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOSTM I2C™ TM EnSigna ImpliedDisconnect™ FACT™ ISOPLANAR™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I5