MWS11-PH22-CS CMDA Power Amplifier A M I C R O S E M I C O M P A N Y P RELIMINARY There are two leadless chip carrier (LCC) package versions for this Power Amplifier family. One is a 3mm x 3mm chip scale package (CSP) with external input/output match and the other is a 6mm x 6mm internally I/O matched module. Single 3V Supply 29dBm Linear Output Power 27dB Linear Gain 38-40% Linear Efficiency 70mA Idle Current 3V 1710-1780MHz CDMA Handsets 3V 1850-1910MHz CDMA Handsets IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com W W W . Microsemi . COM The MWS CDMA is a highefficiency linear amplifier targeting 3V mobile handheld systems. The device is manufactured in an advanced InGaP/GaAs Heterojunction Bipolar Transistor (HBT) RF IC fab process. It is designed for use as a final RF amplifier in 3V CDMA and TDMA PCS battery-powered digital equipment (dual-mode), spread spectrum systems, and other linear applications in the 1700MHz to 1900MHz band. 3V TDMA PCS Handsets Spread Spectrum Systems Other Linear Wireless Applications 16-Pin Leadless Package TOP BOTTOM 3mm PACKAGE DATA 3mm Actual Size TJ (°C) 1700-1900MHz CDMA Copyright 2000 Rev. 0.2,2000-12-08 3mm x 3mm Plastic MLP 16-PIN MWS11-PH22-CS Microsemi Micro WaveSys 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 1 MWS11-PH22-CS CMDA Power Amplifier A M I C R O S E M I C O M P A N Y P RELIMINARY W W W . Microsemi . COM Supply Voltage (VBAT) ........................................................................................... +8.0V DC Supply Voltage (POUT < 31 dBm) ........................................................................... +4.5V DC Control Voltage (VREF)........................................................................................... +3.2V DC Input RF Power ........................................................................................................+6dBm Operating Case Temperature....................................................................... -30°C to 100°C Storage Temperature ................................................................................... -65°C to 150°C Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to Ground. Currents are positive into, negative out of specified terminal. RF IN RF input. An external series capacitor is required as a DC block. The input match can be improved to < 2:1 by using a series capacitor and shunt inductor. VCC1 Power supply for first stage and interstage match. VCC should be fed through an inductor terminated with a capacitor on the supply side. VCC2 Power supply for Second stage and interstage match. VCC should be fed through an inductor terminated with a capacitor on the supply side. VCC Supply for bias reference circuits. VB1 First stage control voltage. The VB1 pin can be connected with the other stage control voltages into a single reference voltage through an external resistor bridge. VB2 Second stage control voltage. The VB2 pin can be connected with the other stage control voltages into a single reference voltage through an external resistor bridge. RF OUT RF Output and Power supply for final stage. This is the unmatched collector output of the third stage. A DC Block is required following the matching components. The biasing may be provided via a parallel L-C set for resonance at the operating frequency of 1920MHz to 1980 MHz. It is important to select an inductor with very low DC resistance with a 1A current rating. Alternatively, shunt microstrip techniques are also applicable and provide very low DC resistance. Low frequency bypassing is required for stability. There are three pins designated as RF OUT. This is a bias circuit level ground, isolated from the backside ground contact. Ground for First Stage. This ground should be isolated from the backside ground contact. GND2 Ground for Second Stage. This ground should be isolated from the backside ground contact. PKG GND Copyright 2000 Rev. 0.2,2000-12-08 Ground connection. The backside of the package should be soldered to a top side ground pad which is connected to the ground plane with multiple vias. The pad should have a short thermal path to the ground plane. Microsemi Micro WaveSys 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 2 PACKAGE DATA GND GND1 MWS11-PH22-CS CMDA Power Amplifier A M I C R O S E M I C O M P A N Y P RELIMINARY Unless otherwise specified, the following specifications apply over the operating ambient temperature -35°C ≤ TA ≤ 85°C except where otherwise noted. Test Conditions: T=25C, Vcc=3.4V, Pout=29dBm. Parameter Symbol Test Conditions Usable Frequency Range ACPR Units 1910 MHz 26 28 dB -46 -44 dBc 1750 - 1780 1850 - 1910 Tuned I/O matching network GP CDMA Adjacent Channel Power Rejection MWS11-PH22-CS Typ Max 1750 Typical Frequency Range Linear Power Gain Min 24 1.25MHz offset as defined by IS-95 Second Harmonic -35 dBc Third Harmonic -40 dBc Fourth Harmonic -45 dBc -139 dBm/Hz CDMA Noise Power Linear Power-Added Efficiency 80MHz offset PAE ICQ Quiescent Current VREF range: 2.6 to 2.9V 36 38 40 % 60 70 90 mA 80MHz offset CDMA Noise Power -139 W W W . Microsemi . COM dBm/Hz < 2:1 Input VSWR No damage Output Load VSWR 10:1 5:1 Stability Power Supply Voltage 3.0 VCC 3.4 4.5 V SPECIFICATIONS Copyright 2000 Rev. 0.2,2000-12-08 Microsemi Micro WaveSys 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 3 MWS11-PH22-CS CMDA Power Amplifier A M I C R O S E M I C O M P A N Y P RELIMINARY W W W . Microsemi . COM Figure 1 – Evaluation Board for the CDMA Power Amp V R EF 2.8V C 15 C8 C9 C 17 R2 T1 V CC 3.5V C 13 C 12 C 16 R1 C 10 VB2 VCC T2 VCC2 VB1 RF line line C 16 C6 C7 C3 Figure 2 – Evaluation Board for the CDMA Schematic Copyright 2000 Rev. 0.2,2000-12-08 Microsemi Micro WaveSys 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 4 APPLICATION R F IN M W S 11P H 22-C S MWS11-PH22-CS CMDA Power Amplifier A M I C R O S E M I C O M P A N Y P RELIMINARY W W W . Microsemi . COM NOTES Preliminary Data – Information contained in this document is pre-production data and is proprietary to Microsemi. It may not be modified in any way without the express written consent of Microsemi. Product referred to herein is offered in sample form only and Microsemi reserves the right to change or discontinue this proposed product at any time. Copyright 2000 Rev. 0.2,2000-12-08 Microsemi Micro WaveSys 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 5