UHF POWER TRANSISTOR DRF1402F NPN SiGe RF TRANSISTOR SOT-89 The DRF1402F is a low cost, NPN medium power SiGe HBT(Hetero-Junction Bipolar Transistor) encapsulated in a plastic SOT-89 SMD package. 4 The DRF1402F can be used as a driver device or an output device, depending on the specific application □ FEATURES o 4.8 Volt operation o P1dB 28 dBm @f=465MHz o Power gain 10 dB @f=465MHz PIN CONFIGURATION PIN NO SYMBOL 1 B base o Hand-held radio equipment in common 2 C collector emitter class-AB operation in 450 MHz 3 E emitter communication band. 4 C collector □ APPLICATIONS DESCRIPTION □ MAXIMUM RATINGS SYMBOL PARAMETER CONDITION VALUE Unit VCBO Collector-Base Voltage Open Emitter 20 V VCEO Collector-Emitter Voltage Open Base 8 V VEBO Emitter-Base Voltage Open Collector 4 V Ic Collector Current (DC) 350 mA PT Total Power Dissipation 1 W TSTG Storage Temperature -65 ~ 150 ℃ TJ Operating Junction Temperature 150 ℃ www.tachyonics.co.kr Ts = 60℃ ; note 1 - 1/6 - Sep-03-2002 2nd Edition UHF POWER TRANSISTOR DRF1402F □ THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITION thermal resistance from junction to soldering point PT=1W; Ts=60℃;note1 VALUE Unit 55 K/W * Note 1. Ts is temperature at the soldering point of the collector pin. □ QUICK REFERENCE DATA RF performance at Ts ≤ 60 ℃ in common emitter test circuit (see Fig 8.) Mode of Operation f [MHz] VCE [V] PL [mW] GP [dB] ηC [%] CW, class-AB 465 4.8 630 ≥ 10 ≥ 60 www.tachyonics.co.kr - 2/6 - Sep-03-2002 2nd Edition UHF POWER TRANSISTOR DRF1402F □ DC CHARACTERISTICS Tj=25 ℃ unless otherwise specified SYMBOL PARAMETER CONDITION MIN. MAX. UNIT BVCBO collector-base breakdown voltage open emitter 20 V BVCEO collector-emitter breakdown voltage open base 8 V BVEBO emitter-base breakdown voltage open collector 3 V Is Collector leakage current 0.1 mA hFE DC current gain 60 Cc Collector capacitance 4.5 160 pF 6 Hfe 140 Cc [pF] 120 5 100 4 80 60 3 40 20 2 0 0.00 0 0.10 0.20 0.30 0.40 2 4 0.50 Ic(A) 8 10 VCB [V] f=900MHz; VCE=4.8V; ICQ=5mA; Ts < 60℃ VCE = 4.8V ; Tj =25℃ Fig 1. DC Current gain v.s Collector current 6 Fig 2. Collector-base capacitance v.s Collectorbase voltage(DC) www.tachyonics.co.kr - 3/6 - Sep-03-2002 2nd Edition UHF POWER TRANSISTOR DRF1402F □ APPLICATION INFORMATION RF performance at Ts ≤ 60 ℃ in common emitter configuration. Mode of Operation f [MHz] VCE [V] PL [mW] GP [dB] ηC [%] CW, class-AB 465 4.8 630 ≥ 10 ≥ 60 DRF1402F Source/Load Impedance as a frequency DRF1402F Transister Impedance VCE = 4.8V, ICQ = 5mA, Pout = 28dBm ZS [Ω] ZL [Ω] Freq. [MHz] Rs Xs RL XL 440 17.34 6.91 22.21 -0.59 450 17.21 7.89 19.31 2.58 460 17.12 8.90 17.20 7.07 470 17.09 9.95 15.66 19.00 ZL Zs 20 30 Rs ZS 18 [Ω] ZL [Ω] 16 25 14 15 12 10 10 RL 20 5 Xs XL 8 0 6 -5 -10 4 430 440 450 460 470 430 480 Freq[MHz] 450 460 470 480 Freq [MHz] Fig 5. Source Impedance (series components) as a freq, typical values. www.tachyonics.co.kr 440 Fig 6. Load Impedance (series components) as a freq, typical values. - 4/6 - Sep-03-2002 2nd Edition UHF POWER TRANSISTOR DRF1402F Vcc Part List C1, C7,C10,C11 50 RF_OUT RF IN : Air Coil 79.5 470pF C3,C4 6pF C2 C5 8pF 7pF C6 12pF C9,C12 1nF C8,C13 100nF L1(Chip L : 1608) 8.2nH L2,L3,L4 (Air Coil) 3turn L5,L6 (Air Coil) 8turn Air Coil Diameter 2 mm Unit : mm Fig 7. DRF1402F Test Circuit Board Layout @ f = 465MHz Test board : FR4 glass epoxy board, dielectric constant = 4.5, thickness = 0.8 mm Test condition : CW test, VCC = 4.8 V, ICQ = 5 mA, frequency = 465 MHz. Fig 8. Test Circuit Schematic Diagram @f = 465MHz www.tachyonics.co.kr - 5/6 - Sep-03-2002 2nd Edition UHF POWER TRANSISTOR DRF1402F □ PACKAGE DIMENSION Fig 9. SOT-89 Package dimension www.tachyonics.co.kr - 6/6 - Sep-03-2002 2nd Edition