Order this document by MRA1000–3.5L/D SEMICONDUCTOR TECHNICAL DATA The RF Line Designed primarily for wideband, large–signal output and driver amplifier stages to 1000 MHz. • Designed for Class A Linear Power Amplifiers • Specified 19 Volt, 1000 MHz Characteristics: Output Power — 3.5 Watts Power Gain — 10 dB, Small–Signal 10 dB, 1000 MHz 3.5 W BROADBAND UHF POWER TRANSISTOR • Built–In Matching Network for Broadband Operation • Gold Metallization for Improved Reliability • Diffused Ballast Resistors CASE 145D–02, STYLE 1 (.380 SOE) MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 28 Vdc Collector–Base Voltage VCBO 50 Vdc Emitter–Base Voltage VEBO 3.5 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 22 0.125 Watts W/°C Operating Junction Temperature TJ 200 °C Tstg – 65 to +200 °C Symbol Max Unit RθJC 8 °C/W Storage Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (TC = 70°C) ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 10 mA, IB = 0) V(BR)CEO 28 – – Vdc Collector–Emitter Breakdown Voltage (IC = 10 mA, VBE = 0) V(BR)CES 50 – – Vdc Collector–Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO 50 – – Vdc Emitter–Base Breakdown Voltage (IE = 5 mA, IC = 0) V(BR)EBO 3.5 – – Vdc ICBO – – 10 mAdc OFF CHARACTERISTICS Collector Cutoff Current (VCB = 30 V, IE = 0) . (continued) REV 1 RF DEVICE DATA MOTOROLA Motorola, Inc. 1997 MRA1000–3.5L 1 ELECTRICAL CHARACTERISTICS — continued Characteristic Symbol Min Typ Max Unit hFE 20 – 90 – Cob – – 15 pF Common–Emitter Amplifier Small–Signal Gain (VCE = 19 V, Pin = 1 mW, f = 1 GHz, IC = 600 mA) GSS 10 – – dB Load Mismatch (VCE = 19 V, IC = 600 mA, Pout = 3.5 W, f = 1 GHz, Load VSWR = ∞:1, All Phase Angles) ψ ON CHARACTERISTICS DC Current Gain (IC = 250 mA, VCE = 5 V) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 24 V, IE = 0, f = 1 MHz) FUNCTIONAL TESTS No Degradation in Output Power Overdrive (VCE = 19 V, IC = 600 mA, f = 1 GHz) (No degradation) Pinover – – 1.75 W TYPICAL CHARACTERISTICS Table 1. Common Emitter S–Parameters S11 S21 S12 S22 VCE (Volts) IC (mA) f (GHz) Mag éφ Mag éφ Mag éφ Mag éφ 19 600 0.5 0.6 0.7 0.8 0.9 1 0.91 0.9 0.87 0.85 0.82 0.78 174 173 171 168 168 168 1.78 1.64 1.53 1.51 1.49 1.5 53 47 36 24 10 –7 0.03 0.03 0.03 0.03 0.03 0.03 23 21 19 15 5 –4 0.55 0.58 0.63 0.68 0.74 0.83 –164 –170 –159 –157 –158 –160 Ă Ă Ă Ă Table 2. Zin and ZOL* versus Frequency VCC = 19 V, Pc = 3.5 W ZOL* Zin (Ohms) Freq. (MHz) Re Im Re Im 500 600 700 800 900 1000 14.6 13.2 11.7 9.95 7.72 4.67 –6.31 –4.07 –8.95 –9.65 –9.72 –8.74 2.36 2.74 3.36 4.12 4.99 6.36 2.53 3.18 4.14 5.13 5.33 5.04 ZOL* = Conjugate of the optimum lead impedance into which the device output operates at a given frequency, output power and voltage. MRA1000–3.5L 2 MOTOROLA RF DEVICE DATA 1.0 0.8 1.5 0.6 2.0 0.4 7.0 3.0 Zo = 50 Ω Zin 800 900 700 f = 1000 MHz 600 0.2 0.4 0.6 0.8 1.0 1.5 500 0 600 f = 500 MHz 700 1000 800 900 0.2 ZOL* Pout , OUTPUT POWER (WATTS) 4.0 5.0 0.2 10 2.0 3.0 4.0 5.0 10 10 5.0 6.0 5.0 4.0 3.0 2.0 1.0 4.0 3.0 0 0.4 0 100 200 2.0 0.6 300 400 500 600 700 Pin, INPUT POWER (mW) 800 900 1000 1.5 0.8 Figure 2. Power Input versus Power Output 1.0 VCC = 19 V, Po = 3.5 W, Zo = 50 Ω Figure 1. Series Equivalent Input/Output Impedance L1 L2 L4 L3 VBIAS C6 C7 + C9 C8 R1 VCC = 19 Vdc R2 Z3 C1 C5 Z1 RF IN Z2 Z5 Z6 Z4 C2 RF OUT C4 C3 C1, C3, C5, C6, C7 C2, C4 C9 L1 L2 L3 L4 R1, R2 Z1 Z2 Z3, Z4 Z5 Z6 500 pF, ATC 0.8 – 10 pF, JFD 0.1 µF, 50 V, Ceramic 7T, 20 Gauge on 200 Mil Ferrite Toroid 8T, 20 Gauge, 100 Mil Dia. 11T, 20 Gauge, 100 Mil Dia. 8T, 20 Gauge on 275 Mil Ferrite Toroid 15 Ω, 1/4 Watt 50 Ω, Microstripline, ȏ = 0.110 λ 10 Ω, Microstripline, ȏ = 0.162 λ 50 Ω, Microstripline, ȏ = 0.052 λ 24 Ω, Microstripline, ȏ = 0.080 λ 50 Ω, Microstripline, ȏ = 0.125 λ Figure 3. 1 GHz Test Circuit VSUPPLY = 21.6 Vdc VSUPPLY 3 x 11 Ω 5W VCC 2N2222 1.0 kΩ TIP41 4.7 kΩ 2.7 kΩ 180 Ω 4.7 Ω 68 Ω VBIAS Figure 4. Bias Circuit MOTOROLA RF DEVICE DATA MRA1000–3.5L 3 PACKAGE DIMENSIONS A J R NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. H C V DIM A B C D H J K R V W 8–32UNC–2A W D 2 B 3 1 4 INCHES MIN MAX 0.320 0.385 0.320 0.330 0.700 0.778 0.220 0.230 0.160 0.170 0.003 0.006 0.490 0.520 0.248 0.275 0.100 0.130 0.055 0.065 STYLE 1: PIN 1. 2. 3. 4. K MILLIMETERS MIN MAX 9.28 9.77 8.13 8.38 17.78 19.76 5.59 5.84 4.07 4.31 0.08 0.15 12.45 13.20 6.30 7.23 2.54 3.30 1.40 1.65 EMITTER BASE EMITTER COLLECTOR CASE 145D–02 ISSUE A Motorola reserves the right to make changes without further notice to any products herein. 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