DT410EL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · · High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance SOT-223 Dim Min Max A A 6.30 6.71 B B 2.90 3.10 D C 6.71 7.29 D 3.30 3.71 2.35 C D D G E S P G E 2.22 G 0.92 1.00 H 1.10 1.30 J 1.55 1.80 K 0.025 0.102 L 0.66 0.79 M 4.55 4.70 N — 10° Mechanical Data P 10° 16° · · R 0.254 0.356 S 10° 16° R H J K L S N M SOT-223 Plastic Case Terminal Connections: See Outline Drawing and Internal Circuit Diagram Above Maximum Ratings All Dimensions in mm 25°C unless otherwise specified Symbol Value Drain-Source Voltage Characteristic VDSS 100 V Gate-Source Voltage VGSS ±20 V Note 1a Continuous Pulsed ID ±2.1 ±10 A Note 1a Note 1b Note 1c Pd 3.0 1.3 1.1 W Tj, TSTG -65 to +150 °C Symbol Value Unit RQJA 42 °C/W RQJC 12 °C/W Drain Current Maximum Power Dissipation Operating and Storage Temperature Range Unit Thermal Characteristics Characteristic Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Notes: the Note 1 1. RQJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as solder mounting surface of the drain pins. RQJC is guaranteed by design while RQCA is determined by the user’s board design. 1a. With 1 in2 oz 2 oz. copper mounting pad RQJA = 42°C/W. 1b. With 0.0066 in2 oz 2 oz. copper mounting pad RQJA = 95°C/W. 1c. With 0.0123 in2 oz 2 oz. copper mounting pad RQJA = 110°C/W. DS11601 Rev.C-4 1 of 4 DT410EL Electrical Characteristics 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition — — 15 mJ VDD = 50V, ID = 10A — — 10 A BVDSS 100 — — V VGS = 0V, ID = 250µA IDSS — — — — 1.0 10 µA VDS = 80V, VGS = 0V Gate-Body Leakage, Forward IGSSF — — 100 nA VGS = 20V, VDS = 0V Gate-Body Leakage, Reverse IGSSR — — -100 nA VGS = -20V, VDS = 0V VGS(th) 1.0 0.65 1.5 1.1 2.0 1.5 V VDS = VGS, ID = 250µA RDS (ON) — 0.2 0.37 0.25 0.50 W VGS = 5.0V, ID = 2.1A ID(ON) 10 — — A VGS = 5.0V, VDS = 5.0V gFS — 6.0 — m VGS = 10V, ID = 2.1A Input Capacitance CISS — 528 — pF Output Capacitance COSS — 85 — pF Reverse Transfer Capacitance CRSS — 20 — pF DRAIN-SOURCE AVALANCHE RATINGS (Note 2) Single Pulse Drain-Source Avalanche WDSS Energy Maximum Drain-Source Avalanche IAR Current OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Tj =55°C ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Tj = 125°C Static Drain-Source On-Resistance Tj = 125°C On-State Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS VDS = 25V, VGS = 0V f = 1.0MHz SWITCHING CHARACTERISTICS (Note 2) Turn-On Delay Time tD(ON) — 9.0 20 ns Turn-On Rise Time tr — 72 120 ns Turn-Off Delay Time tD(OFF) — 49 80 ns Turn-Off Fall Time tf — 47 80 ns Total Gate Charge Qg — 10 16 nC Gate-Source Charge Qgs — 1.5 — nC Gate-Drain Charge Qgd — 5.6 — nC 2.3 A DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Max Continuous Drain-Source Diode IS — — Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Notes: VDD = 50V, ID = 2.1A VGEN = 5.0V, RGEN = 25W VDS = 80V, ID = 2.1A. VGS = 5.0V VSD — — 1.3 V VGS = 0V, IS = 2.3A (Note 2) trr — — 150 ns VGS = 0V, IF = 2.3A, dlF / dt = 100A / µs 2. Pulse Test: Pulse width l 300µs, duty cycle l 2.0%. DS11601 Rev.C-4 2 of 4 DT410EL VGS = 10V ID, DRAIN-SOURCE CURRENT (A) 6.0 3.5 5.0 8 4.0 6 3.0 4 2 0 2.5 0 1 2 3 4 5 2.0 VGS = 3.0V 1.5 3.5 4.0 5.0 1.0 0.5 6 0 2 4 6 TJ = -55 C VDS = 10V ID = 2.1A VGS = 5V 8 2.0 1.5 1.0 0.5 -50 DS11601 Rev.C-4 6.0 10 8 10 ID, DRAIN CURRENT (A) Fig. 2, On-Resistance vs Gate Voltage and Drain Current 10 2.5 ID, DRAIN CURRENT (A) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1, On-Region Characteristics RDS(ON), NORMALIZED DRAIN-SOURCE 0N-RESISTANCE 10 125 25 6 4 2 0 50 100 150 175 Tj, JUNCTION TEMPERATURE ( C) Fig. 3, On-Resistance vs Temperature 0 1 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) Fig. 4, Transfer Characteristics 3 of 4 DT410EL 20 10 10 s LI M IT N) R s DS (O m 10 s 10 dc ID, DRAIN CURRENT (A) s 0 10 s 1m 1s 1 VGS = 10V SINGLE PULSE RQJA = 42 C TA = 25 C 0.1 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 5, Maximum Safe Operating Area 1.0 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.2 0.1 0.1 RQJA (t) = r(t) b RQJA RQJA = See Note 1c 0.05 0.02 P(pk) 0.01 0.01 Single Pulse t1 t2 TJ - TA = PPK b RQJA(t) Duty Cycle, D = t1/t2 0.001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 3000 t1, SQUARE WAVE PULSE DURATION (seconds) Fig. 6, Typical Normalized Transient Thermal Impedance Curves Remark: Thermal characterization performed under conditions described in note 1c. Transient thermal response will change depending on the circuit board design. DS11601 Rev.C-4 4 of 4 DT410EL