FGD3N60LSD IGBT Features Description • High Current Capability Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provide very low conduction losses. The device is designed for applications where very low On-Voltage Drop is a required feature. • Very Low Saturation Voltage : VCE(sat) = 1.2 V @ IC = 3A • High Input Impedance Applications • HID Lamp Applications • Piezo Fuel Injection Applications C C G G D-PAK E E Absolute Maximum Ratings Symbol Description FGD3N60LSD Units VCES Collector-Emitter Voltage 600 V VGES Gate-Emitter Voltage ± 20 V IC Collector Current @ TC = 25°C 6 A Collector Current @ TC = 100°C 3 A 25 A 3 A ICM (1) Pulsed Collector Current IF Diode Continous Forward Current I FM Diode Maximum Forward Current PD Maximum Power Dissipation @ TC = 100°C @ TC = 25°C Derating Factor 25 A 40 W 0.32 W/°C TJ Operating Junction Temperature -55 to +150 °C Tstg Storage Temperature Range -55 to +150 °C TL Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds 250 °C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC (IGBT) RθJA Typ. Max. Units Thermal Resistance, Junction-to-Case Parameter -- 3.1 °C/W Thermal Resistance, Junction-to-Ambient (PCB Mount) (2) -- 100 °C/W Notes : (2) Mounted on 1” squre PCB (FR4 or G-10 Material) ©2005 Fairchild Semiconductor Corporation FGD3N60LSD Rev. A 1 www.fairchildsemi.com FGD3N60LSD IGBT July 2005 Device Marking Device Package Reel Size Tape Width Quantity FGD3N60LSD FGD3N60LSDTM D-PAK 380mm 16mm 2500 FGD3N60LSD FGD3N60LSDTF D-PAK 380mm 16mm 2000 Electrical Characteristics of the IGBT Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units 600 -- -- V -- V/°C Off Characteristics BVCES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA ∆BVCES/ ∆TJ Temperature Coefficient of Breakdown] Voltage VGE = 0V, IC = 1mA -- 0.6 ICES Collector Cut-Off Current VCE = VCES, VGE = 0V -- -- 250 uA IGES G-E Leakage Current VGE = VGES, VCE = 0V -- -- ± 100 nA On Characteristics VGE(th) G-E Threshold Voltage IC = 3mA, VCE = VGE 2.5 3.2 5.0 V VCE(sat) Collector to Emitter Saturation Voltage IC = 3A, VGE = 10V -- 1.2 1.5 V IC = 6A, VGE = 10V -- 1.8 -- V -- 185 -- pF Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 25V, VGE = 0V, f = 1MHz -- 20 -- pF -- 5.5 -- pF Switching Characteristics td(on) Turn-On Delay Time tr Rise Time VCC = 480 V, IC = 3A, RG = 470Ω, VGE = 10V, Inductive Load, TC = 25°C -- 40 -- ns -- 40 -- ns -- 600 -- ns -- 600 -- ns td(off) Turn-Off Delay Time tf Fall Time Eon Turn-On Switching Loss -- 250 -- uJ Eoff Turn-Off Switching Loss -- 1.00 -- mJ -- 1.25 -- mJ -- 40 -- ns Ets Total Switching Loss td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss Ets Total Switching Loss Qg Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector Charge Le Internal Emitter Inductance FGD3N60LSD Rev. A VCC = 480 V, IC = 3A, RG = 470Ω, VGE = 10V, Inductive Load, TC = 125°C -- 45 -- ns -- 620 -- ns -- 800 -- ns -- 300 -- uJ -- 1.9 -- mJ -- 2.2 -- mJ VCE = 480 V, IC = 3A, VGE = 10V -- 12.5 -- nC -- 2.8 -- nC -- 4.9 -- nC Measured 5mm from PKG -- 7.5 -- nH 2 www.fairchildsemi.com FGD3N60LSD IGBT Package Marking and Ordering Information C Symbol VFM trr Irr Qrr = 25°C unless otherwise noted Parameter Diode Forward Voltage Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Test Conditions IF = 3A IF = 3A, di/dt = 100A/us VR = 200V Diode Reverse Recovery Charge FGD3N60LSD Rev. A 3 Min. Typ. Max. Units V TC = 25°C -- 1.5 1.9 TC = 100°C -- 1.55 -- TC = 25°C -- 234 -- TC = 100°C -- -- -- TC = 25°C -- 2.64 -- TC = 100°C -- -- -- TC = 25°C -- 309 -- TC = 100°C -- -- -- ns A nC www.fairchildsemi.com FGD3N60LSD IGBT Electrical Characteristics of DIODE T FGD3N60LSD IGBT Typical Performance Characteristics Figure 1. Typical Output Characteristics 30 Figure 2. Typical Output Characteristics 30 Common Emitter T C = 25 ° C 20V Common Emitter TC = 125°C 15V Collector Current, IC [A] Collector Current, IC [A] 24 10V 18 V GE = 8V 12 6 20V 24 15V 18 10V VGE = 8V 12 6 0 0 2 4 6 8 0 0 Collector-Emitter Voltage, V CE [V] Figure 3. Typical Output Characteristics 10 Common Emitter V CE = 20V Common Emitter V GE = 10V Collector Current, IC [A] T C = 25 ° C 8 T C = 125 ° C 6 4 2 8 T C = 25° C T C = 125 ° C 6 4 2 0 0 0.1 1 10 1 Figure 5. Saturation Voltage vs. Case 3 Figure 6. Capacitance Characteristics 600 Com m on Em itter V GE = 10V Com m on Em itter V GE = 0V, f = 1MHz T C = 25 ° C Capacitance [pF] 500 2 IC = 6A IC = 3A 1 10 Gate-Emitter Voltage, V GE[V] Collector-Emitter Voltage, V CE[V] Collector-Emitter Voltage, VCE [V] 8 Figure 4. Transfer Characteristics 10 Collector Current, IC [A] 2 4 6 Collector-Emitter Voltage, VCE [V] I C = 1.5A 400 Cies 300 Coes 200 Cres 100 0 0 0 30 60 90 120 150 1 Case Temperature, T C [° C] FGD3N60LSD Rev. A 10 Collector - Emitter Voltage, V C E [V] 4 www.fairchildsemi.com (Continued) Figure 7. Gate Charge 12 1 0 00 C om m on E m itte r V C C = 48 0V , V GE = 1 0V Vcc = 480V T C = 25 ° C IC = 3 A Switching Time [ns] Gate - Emitter Voltage, VGE [V] Figure 8. Turn-On Characteristics vs. Gate Resistance Com m on Em itter R L = 160 Ω 10 FGD3N60LSD IGBT Typical Performance Characteristics 8 6 4 T C = 25 ° C T C = 12 5 ° C Ton 1 00 Tr 2 0 0 2 4 6 8 10 10 12 2 00 40 0 6 00 8 00 10 0 0 G ate R esistance , R G [ Ω ] Gate Charge, Q g [nC] Figure 9. Turn-Off Characteristics vs. Gate Resistance Figure 10. Switching Loss vs. Gate Resistance 10000 10000 Com m on Em itter V CC = 480V, V GE = 10V IC = 3A Eoff T C = 125 ° C Switching Loss [µJ] Switching Time [ns] T C = 25 ° C Toff 1000 Tf 1000 Eon 100 Com m on Em itter V CC = 480V, V GE = 10V IC = 3A T C = 25 °C 100 200 400 600 T C = 125 °C 10 800 1000 200 400 Gate Resistance, R G [ Ω ] Gate Resistance, R G [Ω ] Figure 11. Turn-On Characteristics vs. Collector Current 600 800 1000 Figure 12. Turn-Off Characteristics vs. Collector Current Common Emitter Vcc = 480V, V GE = 10V R G = 470 Ω 100 1000 T C = 125 ° C Toff Switching Time [ns] Switching Time [ns] T C = 25 °C Ton Tr Tf Common Emitter Vcc = 480 V, V GE = 10V R G = 470 Ω T C = 25 °C T C = 125° C 10 2 FGD3N60LSD Rev. A 3 Collector Current, IC [A] 100 4 2 5 3 Collector Current, IC [A] 4 www.fairchildsemi.com FGD3N60LSD IGBT Typical Performance Characteristics (Continued) Figure 13. Switching Loss vs. Collector Current Figure 14. Forward Characteristics 100 Tc = 25°C Tc = 100°C Common Emitter Vcc = 480 V, VGE = 10V RG = 470Ω TC = 25°C Forward Current, IF [A] Switching Loss [µJ] TC = 125°C Eoff 1000 Eon 10 1 100 0.1 2 3 Collector Current, IC [A] 0 4 1 2 3 4 Forward Voltage Drop, VF [V] Figure 15. Forward Voltage Drop Vs Tj Figure 16. SOA Characteristics 100 2.8 2.4 Collector Current, Ic [A] Forward Voltage Drop, VF [V] Ic MAX (Pulsed) IF=6 A 2.0 1.6 IF=3 A 50µs 10 1ms 1 DC Operation Single Nonrepetitive Pulse Tc = 25°C Curves must be derated linearly with increase in temperature 0.1 IF=1.5 A 1.2 100µs Ic MAX (Continuous) 0.01 25 50 75 100 125 0.1 Junction Temperature, Tj [°C] 1 10 100 1000 Collector - Emitter Voltage, VCE [V] Figure 17. Transient Thermal Impedance of IGBT 10 Thermal Response [Zthjc] 0 .5 1 0 .2 0 .1 0 .0 5 0 .1 0 .0 2 Pdm s in g le p u ls e t1 0 .0 1 t2 Duty factor D = t1 / t2 Peak Tj = Pdm × Zthjc + TC 0 .0 1 1 E -5 1 E -4 1 E -3 0 .0 1 0 .1 1 10 R e cta ngula r P uls e D ura tio n [s e c] FGD3N60LSD Rev. A 6 www.fairchildsemi.com D-PAK MIN0.55 0.91 ±0.10 9.50 ±0.30 0.50 ±0.10 0.76 ±0.10 0.50 ±0.10 1.02 ±0.20 2.30TYP [2.30±0.20] (1.00) (3.05) (2XR0.25) (0.10) 2.70 ±0.20 6.10 ±0.20 9.50 ±0.30 6.60 ±0.20 (5.34) (5.04) (1.50) (0.90) 2.30 ±0.20 (0.70) 2.30TYP [2.30±0.20] (0.50) 2.30 ±0.10 0.89 ±0.10 MAX0.96 (4.34) 2.70 ±0.20 0.80 ±0.20 0.60 ±0.20 (0.50) 6.10 ±0.20 5.34 ±0.30 0.70 ±0.20 6.60 ±0.20 0.76 ±0.10 Dimensions in Millimeters FGD3N60LSD Rev. A 7 www.fairchildsemi.com FGD3N60LSD IGBT Mechanical Dimensions The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 8 FGD3N60LSD Rev. A www.fairchildsemi.com FGD3N60LSD IGBT TRADEMARKS