Order this document by MMFT3055VL/D SEMICONDUCTOR TECHNICAL DATA N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. TMOS POWER FET 1.5 AMPERES 60 VOLTS RDS(on) = 0.140 OHM TM D 4 G New Features of TMOS V • On–resistance Area Product about One–half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology • Faster Switching than E–FET Predecessors 1 2 3 S CASE 318E–04, Style 3 TO–261AA Features Common to TMOS V and TMOS E–FETS • Avalanche Energy Specified • IDSS and VDS(on) Specified at Elevated Temperature • Static Parameters are the Same for both TMOS V and TMOS E–FET • Available in 12 mm Tape & Reel Use MMFT3055VLT1 to order the 7 inch/1000 unit reel Use MMFT3055VLT3 to order the 13 inch/4000 unit reel MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Value Unit VDSS VDGR VGS VGSM 60 Vdc 60 Vdc ± 15 ± 20 Vdc Vpk Drain Current – Continuous Drain Current – Continuous @ 100°C Drain Current – Single Pulse (tp ≤ 10 µs) ID ID IDM 1.5 1.2 5.0 Adc Total PD @ TA = 25°C mounted on 1” sq. Drain pad on FR–4 bd material Total PD @ TA = 25°C mounted on 0.70” sq. Drain pad on FR–4 bd material Total PD @ TA = 25°C mounted on min. Drain pad on FR–4 bd material Derate above 25°C PD 2.1 1.7 0.94 6.3 Watts mW/°C TJ, Tstg EAS – 55 to 175 °C Rating Drain–to–Source Voltage Drain–to–Gate Voltage (RGS = 1.0 MΩ) Gate–to–Source Voltage – Continuous Gate–to–Source Voltage – Non–repetitive (tp ≤ 10 ms) Operating and Storage Temperature Range Single Pulse Drain–to–Source Avalanche Energy – Starting TJ = 25°C (VDD = 25 Vdc, VGS = 5.0 Vdc, Peak IL = 3.4 Apk, L = 10 mH, RG = 25 Ω ) Thermal Resistance – Junction to Ambient on 1” sq. Drain pad on FR–4 bd material – Junction to Ambient on 0.70” sq. Drain pad on FR–4 bd material – Junction to Ambient on min. Drain pad on FR–4 bd material Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds Apk mJ 58 °C/W RθJA RθJA RθJA TL 70 88 159 260 °C Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. E–FET, Designer’s, and TMOS V are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. REV 1 TMOS Motorola Motorola, Inc. 1996 Power MOSFET Transistor Device Data 1 MMFT3055VL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max Unit 60 — — 65 — — Vdc mV/°C — — — — 10 100 — — 100 nAdc 1.0 — 1.5 3.7 2.0 — Vdc mV/°C — 0.125 0.14 Ohm — — — — 0.25 0.24 gFS 1.0 3.5 — mhos Ciss — 350 490 pF Coss — 110 150 Crss — 29 60 td(on) — 9.5 20 tr — 18 40 td(off) — 35 70 tf — 22 40 QT — 9.0 10 Q1 — 1.0 — Q2 — 4.0 — Q3 — 3.5 — — — 0.82 0.68 1.2 — trr — 41 — ta — 29 — tb — 12 — QRR — 0.066 — — 4.5 — — 7.5 — OFF CHARACTERISTICS (Cpk ≥ 2.0) (3) Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = 0.25 mAdc) Temperature Coefficient (Positive) V(BR)DSS Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C) IDSS Gate–Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc) IGSS µAdc ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) Threshold Temperature Coefficient (Negative) (Cpk ≥ 2.0) (3) Static Drain–to–Source On–Resistance (VGS = 5.0 Vdc, ID = 0.75 Adc) (Cpk ≥ 2.0) (3) VGS(th) RDS(on) Drain–to–Source On–Voltage (VGS = 5.0 Vdc, ID = 1.5 Adc) (VGS = 5.0 Vdc, ID = 0.75 Adc, TJ = 150°C) VDS(on) Forward Transconductance (VDS = 8.0 Vdc, ID = 1.5 Adc) Vdc DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (2) Turn–On Delay Time (VDD = 30 Vdc, ID = 1.5 Adc, VGS = 5.0 Vdc, RG = 9.1 Ω) Rise Time Turn–Off Delay Time Fall Time Gate Charge (VDS = 48 Vdc, ID = 1.5 Adc, VGS = 5.0 Vdc) ns nC SOURCE–DRAIN DIODE CHARACTERISTICS Forward On–Voltage (1) (IS = 1.5 Adc, VGS = 0 Vdc) (IS = 1.5 Adc, VGS = 0 Vdc, TJ = 150°C) Reverse Recovery Time (IS = 1.5 Adc, VGS = 0 Vdc, dIS/dt = 100 A/µs) Reverse Recovery Stored Charge VSD Vdc ns µC INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the drain lead 0.25″ from package to center of die) LD Internal Source Inductance (Measured from the source lead 0.25″ from package to source bond pad) LS nH nH (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. (2) Switching characteristics are independent of operating junction temperature. (3) Reflects typical values. Max limit – Typ Cpk = 3 x SIGMA 2 Motorola TMOS Power MOSFET Transistor Device Data MMFT3055VL TYPICAL ELECTRICAL CHARACTERISTICS 6V 4.5 V 3.5 V I D , DRAIN CURRENT (AMPS) 3.5 4 TJ = 25°C 3 2.5 2 1.5 2.5 V 1 0.5 0 1 2 3 4 5 6 7 8 VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) 3 2.5 2 1.5 1 25°C 0.5 2V 0 VDS ≥ 10 V 3.5 3V I D , DRAIN CURRENT (AMPS) 4 9 0 10 0 0.5 1 TJ = 100°C 0.175 25°C 0.125 – 55°C 0.1 0.075 0.05 0.025 0 0 0.5 1 2 2.5 1.5 3 ID, DRAIN CURRENT (AMPS) 3.5 4 R DS(on) , DRAIN–TO–SOURCE RESISTANCE (OHMS) R DS(on) , DRAIN–TO–SOURCE RESISTANCE (OHMS) VGS = 5 V 0.15 3 3.5 4 4.5 5 5.5 6 6.5 TJ = 25°C 0.2 0.175 0.15 VGS = 10 V 0.125 0.1 15 V 0.075 0.05 0.025 0 0 0.5 1 1.5 3 2 2.5 ID, DRAIN CURRENT (AMPS) 3.5 4 Figure 4. On–Resistance versus Drain Current and Gate Voltage 1000 2.0 VGS = 0 V VGS = 5 V ID = 0.75 A 1.6 1.4 I DSS , LEAKAGE (nA) RDS(on) , DRAIN–TO–SOURCE RESISTANCE (NORMALIZED) 2.5 0.25 0.225 Figure 3. On–Resistance versus Drain Current and Temperature 1.8 2 Figure 2. Transfer Characteristics 0.25 0.2 1.5 VGS, GATE–TO–SOURCE VOLTAGE (VOLTS) Figure 1. On–Region Characteristics 0.225 100°C TJ = – 55°C 1.2 1.0 0.8 0.6 TJ = 125°C 100 100°C 10 0.4 0.2 0 – 50 – 25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) 150 175 Figure 5. On–Resistance Variation with Temperature Motorola TMOS Power MOSFET Transistor Device Data 1 0 10 30 40 20 50 VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) 60 Figure 6. Drain–To–Source Leakage Current versus Voltage 3 MMFT3055VL POWER MOSFET SWITCHING Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (∆t) are determined by how fast the FET input capacitance can be charged by current from the generator. The capacitance (Ciss) is read from the capacitance curve at a voltage corresponding to the off–state condition when calculating td(on) and is read at a voltage corresponding to the on–state when calculating td(off). The published capacitance data is difficult to use for calculating rise and fall because drain–gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) can be made from a rudimentary analysis of the drive circuit so that At high switching speeds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which reduces the gate drive current. The voltage is determined by Ldi/dt, but since di/dt is a function of drain current, the mathematical solution is complex. The MOSFET output capacitance also complicates the mathematics. And finally, MOSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If the parasitics were not present, the slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. t = Q/IG(AV) During the rise and fall time interval when switching a resistive load, VGS remains virtually constant at a level known as the plateau voltage, VSGP. Therefore, rise and fall times may be approximated by the following: tr = Q2 x RG/(VGG – VGSP) tf = Q2 x RG/VGSP where VGG = the gate drive voltage, which varies from zero to VGG RG = the gate drive resistance and Q2 and VGSP are read from the gate charge curve. During the turn–on and turn–off delay times, gate current is not constant. The simplest calculation uses appropriate values from the capacitance curves in a standard equation for voltage change in an RC network. The equations are: td(on) = RG Ciss In [VGG/(VGG – VGSP)] td(off) = RG Ciss In (VGG/VGSP) 1000 C, CAPACITANCE (pF) 800 VGS = 0 V VDS = 0 V 900 TJ = 25°C Ciss 700 600 Crss 500 400 Ciss 300 200 Coss 100 Crss 0 10 5 0 VGS 5 10 15 20 25 VDS GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 4 Motorola TMOS Power MOSFET Transistor Device Data 30 9 27 QT 8 24 7 VGS 21 6 18 5 15 4 Q1 12 Q2 3 9 2 ID = 1.5 A 6 TJ = 25°C 3 0 8 9 10 1 Q3 0 0 1 VDS 2 3 4 6 5 7 1000 t, TIME (ns) 10 VDS , DRAIN–TO–SOURCE VOLTAGE (VOLTS) VGS, GATE–TO–SOURCE VOLTAGE (VOLTS) MMFT3055VL VDD = 30 V ID = 1.5 A VGS = 5 V TJ = 25°C 100 td(off) tf tr td(on) 10 1 1 10 QT, TOTAL CHARGE (nC) RG, GATE RESISTANCE (OHMS) Figure 8. Gate–To–Source and Drain–To–Source Voltage versus Total Charge Figure 9. Resistive Switching Time Variation versus Gate Resistance 100 DRAIN–TO–SOURCE DIODE CHARACTERISTICS 1.6 I S , SOURCE CURRENT (AMPS) 1.4 VGS = 0 V TJ = 25°C 1.2 1 0.8 0.6 0.4 0.2 0 0.6 0.625 0.65 0.675 0.7 0.725 0.75 0.775 0.8 0.825 0.85 VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS) Figure 10. Diode Forward Voltage versus Current SAFE OPERATING AREA The Forward Biased Safe Operating Area curves define the maximum simultaneous drain–to–source voltage and drain current that a transistor can handle safely when it is forward biased. Curves are based upon maximum peak junction temperature and a case temperature (TC) of 25°C. Peak repetitive pulsed power limits are determined by using the thermal response data in conjunction with the procedures discussed in AN569, “Transient Thermal Resistance–General Data and Its Use.” Switching between the off–state and the on–state may traverse any load line provided neither rated peak current (IDM) nor rated voltage (VDSS) is exceeded and the transition time (tr,tf) do not exceed 10 µs. In addition the total power averaged over a complete switching cycle must not exceed (TJ(MAX) – TC)/(RθJC). A Power MOSFET designated E–FET can be safely used in switching circuits with unclamped inductive loads. For reli- Motorola TMOS Power MOSFET Transistor Device Data able operation, the stored energy from circuit inductance dissipated in the transistor while in avalanche must be less than the rated limit and adjusted for operating conditions differing from those specified. Although industry practice is to rate in terms of energy, avalanche energy capability is not a constant. The energy rating decreases non–linearly with an increase of peak current in avalanche and peak junction temperature. Although many E–FETs can withstand the stress of drain– to–source avalanche at currents up to rated pulsed current (IDM), the energy rating is specified at rated continuous current (ID), in accordance with industry custom. The energy rating must be derated for temperature as shown in the accompanying graph (Figure 13). Maximum energy at currents below rated continuous ID can safely be assumed to equal the values indicated. 5 MMFT3055VL SAFE OPERATING AREA 60 VGS = 15 V SINGLE PULSE TC = 25°C 10 ms 1 100 ms 500 ms 0.1 1s RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.01 0.1 1 50 40 30 20 10 0 100 25 50 75 100 125 150 175 VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature 1 Rthja(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE dc 10 ID = 1.5 A EAS, SINGLE PULSE DRAIN–TO–SOURCE AVALANCHE ENERGY (mJ) I D , DRAIN CURRENT (AMPS) 10 0.1 0.01 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.001 SINGLE PULSE 0.0001 1.0E–05 1.0E–04 1.0E–03 1.0E–02 1.0E–01 t, TIME (s) 1.0E+00 1.0E+01 1.0E+02 1.0E+03 Figure 13. Thermal Response di/dt IS trr ta tb TIME 0.25 IS tp IS Figure 14. Diode Reverse Recovery Waveform 6 Motorola TMOS Power MOSFET Transistor Device Data MMFT3055VL INFORMATION FOR USING THE SOT–223 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.15 3.8 0.079 2.0 0.091 2.3 0.248 6.3 0.091 2.3 0.079 2.0 0.059 1.5 0.059 1.5 0.059 1.5 inches mm SOT–223 SOT–223 POWER DISSIPATION PD = TJ(max) – TA RθJA PD = 175°C – 25°C = 943 milliwatts 159°C/W The 159°C/W for the SOT–223 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 943 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT–223 package. One is to increase the area of the drain pad. By increasing the area of the drain pad, the power Motorola TMOS Power MOSFET Transistor Device Data 160 140 Board Material = 0.0625″ G–10/FR–4, 2 oz Copper TA = 25°C 0.8 Watts ° 120 1.25 Watts* 1.5 Watts 100 θ The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 943 milliwatts. dissipation can be increased. Although one can almost double the power dissipation with this method, one will be giving up area on the printed circuit board which can defeat the purpose of using surface mount technology. A graph of RθJA versus drain pad area is shown in Figure 17. R JA , Thermal Resistance, Junction to Ambient ( C/W) The power dissipation of the SOT–223 is a function of the drain pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SOT–223 package, PD can be calculated as follows: *Mounted on the DPAK footprint 80 0.0 0.2 0.4 0.6 A, Area (square inches) 0.8 1.0 Figure 15. Thermal Resistance versus Drain Pad Area for the SOT–223 Package (Typical) Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. 7 MMFT3055VL SOLDER STENCIL GUIDELINES Prior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads. A solder stencil is required to screen the optimum amount of solder paste onto the footprint. The stencil is made of brass or stainless steel with a typical thickness of 0.008 inches. The stencil opening size for the SOT–223 package should be the same as the pad size on the printed circuit board, i.e., a 1:1 registration. SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C. 8 • The soldering temperature and time shall not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. Motorola TMOS Power MOSFET Transistor Device Data MMFT3055VL TYPICAL SOLDER HEATING PROFILE For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones, and a figure for belt speed. Taken together, these control settings make up a heating “profile” for that particular circuit board. On machines controlled by a computer, the computer remembers these profiles from one operating session to the next. Figure 18 shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. This profile will vary among soldering systems but it is a good starting point. Factors that can affect the profile include the type of soldering system in use, density and types of components on the board, type of solder used, and the type of board or substrate material being used. This profile shows temperature versus time. The STEP 1 PREHEAT ZONE 1 “RAMP” 200°C STEP 2 STEP 3 VENT HEATING “SOAK” ZONES 2 & 5 “RAMP” DESIRED CURVE FOR HIGH MASS ASSEMBLIES line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. The two profiles are based on a high density and a low density board. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this profile. The type of solder used was 62/36/2 Tin Lead Silver with a melting point between 177 –189°C. When this type of furnace is used for solder reflow work, the circuit boards and solder joints tend to heat first. The components on the board are then heated by conduction. The circuit board, because it has a large surface area, absorbs the thermal energy more efficiently, then distributes this energy to the components. Because of this effect, the main body of a component may be up to 30 degrees cooler than the adjacent solder joints. STEP 5 STEP 4 HEATING HEATING ZONES 3 & 6 ZONES 4 & 7 “SPIKE” “SOAK” STEP 6 STEP 7 VENT COOLING 205° TO 219°C PEAK AT SOLDER JOINT 170°C 160°C 150°C 150°C 140°C 100°C 100°C SOLDER IS LIQUID FOR 40 TO 80 SECONDS (DEPENDING ON MASS OF ASSEMBLY) DESIRED CURVE FOR LOW MASS ASSEMBLIES 50°C TIME (3 TO 7 MINUTES TOTAL) TMAX Figure 16. Typical Solder Heating Profile Motorola TMOS Power MOSFET Transistor Device Data 9 MMFT3055VL PACKAGE DIMENSIONS A F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 4 S B 1 2 3 D L G J C 0.08 (0003) M H INCHES DIM MIN MAX A 0.249 0.263 B 0.130 0.145 C 0.060 0.068 D 0.024 0.035 F 0.115 0.126 G 0.087 0.094 H 0.0008 0.0040 J 0.009 0.014 K 0.060 0.078 L 0.033 0.041 M 0_ 10 _ S 0.264 0.287 MILLIMETERS MIN MAX 6.30 6.70 3.30 3.70 1.50 1.75 0.60 0.89 2.90 3.20 2.20 2.40 0.020 0.100 0.24 0.35 1.50 2.00 0.85 1.05 0_ 10 _ 6.70 7.30 K STYLE 3: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN CASE 318E–04 ISSUE H Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 or 602–303–5454 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–81–3521–8315 MFAX: [email protected] – TOUCHTONE 602–244–6609 INTERNET: http://Design–NET.com ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 10 ◊ *MMFT3055VL/D* Motorola TMOS Power MOSFET TransistorMMFT3055VL/D Device Data