Freescale Semiconductor, Inc. Order this document by MHPA21010/D SEMICONDUCTOR TECHNICAL DATA The RF Line Freescale Semiconductor, Inc... Designed for Class AB amplifier applications in 50 ohm systems operating in the UMTS frequency band. A silicon FET design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital modulation systems. • Typical W–CDMA Performance for VDD = 28 Volts, Vbias = 8 Volts, IDQ = 550 mA, Channel Bandwidth = 3.84 MHz, Adjacent Channels at ± 5 MHz, ACPR Measured in 3.84 MHz Bandwidth. Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF, 3GPP Test Model 1, 64 DTCH. • Adjacent Channel Power: –50 dBc @ 30 dBm, 5 MHz Channel Spacing • Power Gain: 23.7 dB Min (@ f = 2140 MHz) • Excellent Phase Linearity and Group Delay Characteristics • 0.2 dB Typical Gain Flatness • Ideal for Feedforward Base Station Applications 2110–2170 MHz 10 W, 23.7 dB RF HIGH POWER LDMOS AMPLIFIER CASE 301AP–02, STYLE 3 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Value Unit DC Supply Voltage VDD 30 Vdc RF Input Power (Single Carrier CW) Pin +20 dBm Storage Temperature Range Tstg –40 to +100 °C Operating Case Temperature Range TC –20 to +100 °C Quiescent Bias Current IDQ 750 mA Rating ELECTRICAL CHARACTERISTICS (VDD = 28 Vdc, VBIAS ≅ 8 V Set for Supply Current of 550 mA, TC = 25°C, 50 Ω System) Characteristic Supply Current Symbol Min Typ Max Unit IDD — 550 — mA Power Gain (f = 2140 MHz) Gp 23.7 25 — dB Gain Flatness (f = 2110–2170 MHz) GF — 0.2 0.6 dB Power Output @ 1 dB Comp. (f = 2140 MHz) P1dB — 41.5 — dBm Input VSWR (f = 2110–2170 MHz) VSWRin — 1.5:1 2:1 Noise Figure (f = 2140 MHz) NF — — 10 dB ACPR — –55 –50 dBc Adjacent Channel Power Rejection @ 30 dBm Avg., 3.84 MHz BW, 5 MHz Channel Spacing REV 2 MOTOROLA RF DEVICE DATA Motorola, Inc. 2003 For More Information On This Product, Go to: www.freescale.com MHPA21010 1 Freescale Semiconductor, Inc. -+ 3 0881/8 % - 0881/8 #0'1.2 & 695 0881/8 0.:1*; - 4 4 + $%% & $' ()* & + % & ++ , - "(./ #0'1.2 + 5 - 6 -+ - - -5 -4 +_ $%% & $' ()* & - <29 % & ++ , +_ η - -_ 4 - 5 +_ -4 - - +_ - 5 - " & -_ -5 -- - -6 -5 -+ -4 -3 - Figure 1. Two–Tone Power Gain, Input Return Loss and Output Return Loss versus Frequency Figure 2. 2–Carrier W–CDMA Power Gain and Efficiency versus Frequency 6 6 6+ - $%% & $' ()* 1. & - <29 % & ++ , " & +_ -_ 5 6 +_ 0881/8 % - 0881/8 #0'1.2 695 0881/8 0.:1*; 5+ = + 6 = - 0.:1*; & 695 +_ + -_ + ++ - 5 +_ -- - -6 -5 -+ -4 -3 4 - 6"%%"%"%#""' $%% & $' % & ++ , - ?@ - & -6A9A+ & -59+ - @ - & -6+ & -5+ + 6 6+ 5 5+ - ? + ++ 4 - -+ 6 % & 3+ , 4+ , 5+ + 4 $%% & $' - & -6+ & -5+ ++ , ++ 5+ , -+ + 6 6+ 5 ()* "" ""# Figure 5. Third Order Intermodulation Distortion versus Output Power MHPA21010 2 η%7 ()* "", + 5 + 6 6+ 5 ()* "" ""# Figure 4. Two–Tone W–CDMA IM3 versus Output Power 6+ 5 4 5 + 6 5 ()* 5 6 -4 $%% & $' % & ++ , & -5 η + + - -+ + -4 η%7 6 %>""' 6"%%"%"%#""' Figure 3. 2–Carrier W–CDMA IM3 and ACPR versus Frequency 6"%%"%"%#""' Freescale Semiconductor, Inc... !"!"""## TYPICAL CHARACTERISTICS - + 1. " , Figure 6. CW Output Power, Efficiency and Gain versus Input Power MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. - $%% & $' % & ++ , - & -6+ & -5+ 6' ' 5+ + 4 6 ++ 4 4+ 5 η + - -+ + 6 η%7 5 6+ ()* "" , Freescale Semiconductor, Inc... Figure 7. 2–Carrier W–CDMA ACPR, IM3 and Efficiency versus Output Power MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MHPA21010 3 Freescale Semiconductor, Inc. PACKAGE DIMENSIONS A A 2X G 99+- " R 1 " # 2 3 4 K DIM A B C D E F G H J K L N P Q R S W W 99+- 4X D " N L Freescale Semiconductor, Inc... H F E T C 4X P 99+- "#@ -9 "" %## % "# # -59+ -AA59 9 " %#@ 9 69 %# BB " " %#9 S J S B Q 99 SEATING PLANE " INCHES MIN MAX -934 -93 -963 -96A 95+ 94+ 9-3 96 9 9- 94# -94+# -9A# 944 9 9-+ 9-4+ 9AA# 96A# 9 9-6 9-- 9-6 9+6+ 9+++ 955+ 954+ 9A# #" 6@ -9 9 69 59 #@ MILLIMETERS MIN MAX 5593 5+9659 6+9649 4936 956 9+ 96 9+5 9-# 5-9A-# 6933# 4934 39-69- 59-A +9-+# A9A-# 9 966 69 696+ -69+A -59- --96 --99A# " $# $%% "" % CASE 301AP–02 ISSUE C NOTE: VDD (Pin 3) should always be applied before VBIAS (Pin 2). Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. 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Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Motorola and the Stylized M Logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners. E Motorola, Inc. 2003. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T. Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors MHPA21010 4 MOTOROLA RF DEVICE DATA ◊For More Information On This Product, Go to: www.freescale.com MHPA21010/D