Order this document by MMDF1N05E/D SEMICONDUCTOR TECHNICAL DATA Medium Power Surface Mount Products MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola’s TMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a low reverse recovery time. MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. • • • • • • • • DUAL TMOS MOSFET 50 VOLTS 1.5 AMPERE RDS(on) = 0.30 OHM D G CASE 751–05, Style 11 SO–8 S Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life Logic Level Gate Drive — Can Be Driven by Logic ICs Miniature SO–8 Surface Mount Package — Saves Board Space Diode Is Characterized for Use In Bridge Circuits Diode Exhibits High Speed Avalanche Energy Specified Mounting Information for SO–8 Package Provided IDSS Specified at Elevated Temperature Source–1 1 8 Drain–1 Gate–1 2 7 Drain–1 Source–2 3 6 Drain–2 Gate–2 4 5 Drain–2 Top View MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain–to–Source Voltage VDS 50 Volts Gate–to–Source Voltage — Continuous VGS ± 20 Volts Drain Current — Continuous Drain Current — Pulsed ID IDM 2.0 10 Amps Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C (VDD = 25 V, VGS = 10 V, IL = 2 Apk) EAS 300 mJ TJ, Tstg – 55 to 150 °C PD 2.0 Watts RθJA 62.5 °C/W TL 260 10 °C Sec Rating Operating and Storage Temperature Range Total Power Dissipation @ TA = 25°C Thermal Resistance – Junction to Ambient (1) Maximum Temperature for Soldering, Time in Solder Bath DEVICE MARKING F1N05 (1) Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with one die operating, 10 sec. max. ORDERING INFORMATION Device MMDF1N05ER2 Reel Size Tape Width Quantity 13″ 12 mm embossed tape 2500 MiniMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of the Bergquist Company REV 5 TMOS Motorola Motorola, Inc. 1996 Power MOSFET Transistor Device Data 1 MMDF1N05E ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 50 — — Vdc Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0) IDSS — — 250 µAdc Gate–Body Leakage Current (VGS = 20 Vdc, VDS = 0) IGSS — — 100 nAdc VGS(th) 1.0 — 3.0 Vdc RDS(on) RDS(on) — — — — 0.30 0.50 gFS — 1.5 — mhos Ciss — 330 — pF Coss — 160 — Crss — 50 — td(on) — — 20 tr — — 30 td(off) — — 40 tf — — 25 Qg — 12.5 — Qgs — 1.9 — Qgd — 3.0 — VSD — — 1.6 V trr — 45 — ns Characteristic OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0, ID = 250 µA) ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 1.5 Adc) (VGS = 4.5 Vdc, ID = 0.6 Adc) Ohms Forward Transconductance (VDS = 15 V, ID = 1.5 A) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VDS = 25 V, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance SWITCHING CHARACTERISTICS(2) Turn–On Delay Time Rise Time Turn–Off Delay Time (VDD = 10 V, ID = 1.5 A, RL = 10 Ω, VG = 10 V, RG = 50 Ω) Fall Time Total Gate Charge Gate–Source Charge (VDS = 10 V, ID = 1.5 A, VGS = 10 V) Gate–Drain Charge SOURCE–DRAIN DIODE CHARACTERISTICS (TC = 25°C) Forward Voltage(1) (IS = 1.5 A, VGS = 0 V) (dIS/dt = 100 A/µs) Reverse Recovery Time ns nC (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%. (2) Switching characteristics are independent of operating junction temperature. 2 Motorola TMOS Power MOSFET Transistor Device Data MMDF1N05E TYPICAL ELECTRICAL CHARACTERISTICS 10 6V 8V TJ = 25°C 10 8 4.5 V 6 4V 4 VGS = 3.5 V 2 8 0 2 4 6 8 VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) 6 4 25°C 2 0 10 0 1 RDS(on) , DRAIN–TO–SOURCE ON–RESISTANCE (NORMALIZED) RDS(on) , DRAIN–TO–SOURCE ON–RESISTANCE (OHMS) VGS = 10 V 0.4 0.3 100°C 25°C 0.1 – 55°C 0 2 4 6 ID, DRAIN CURRENT (AMPS) 8 0.5 ID = 1.5 A VGS = 0 0.3 0.2 0.1 0 2 3 4 5 6 7 8 TJ, JUNCTION TEMPERATURE 4 5 6 7 8 125 150 9 1.8 1.6 1.4 VGS = 10 V ID = 1.5 A 1.2 1 0.8 0.6 0.4 0.2 0 – 50 – 25 25 75 0 50 100 TJ, JUNCTION TEMPERATURE (°C) Figure 4. On–Resistance Variation with Temperature 10 Figure 5. On Resistance versus Gate–To–Source Voltage Motorola TMOS Power MOSFET Transistor Device Data V GS(th), GATE THRESHOLD VOLTAGE (NORMALIZED) RDS(on) , DRAIN–TO–SOURCE RESISTANCE (OHMS) Figure 3. On–Resistance versus Drain Current 0.4 – 55°C 3 Figure 2. Transfer Characteristics 0.5 0 2 VGS, GATE–TO–SOURCE VOLTAGE (VOLTS) Figure 1. On–Region Characteristics 0.2 25°C 100°C 100°C 0 – 55°C VDS ≥ 10 V 5V I D , DRAIN CURRENT (AMPS) I D , DRAIN CURRENT (AMPS) 10 V 1.2 VDS = VGS ID = 1 mA 1.1 1 0.9 0.8 0.7 – 50 – 25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (°C) 125 150 Figure 6. Gate Threshold Voltage Variation with Temperature 3 MMDF1N05E VGS 1200 VDS 12 VGS , GATE–TO–SOURCE VOLTAGE (VOLTS) Ciss TJ = 25°C Crss 1000 C, CAPACITANCE (pF) 0 800 VDS = 0 VGS = 0 600 Ciss 400 Coss 200 Crss 0 VDS = 25 V ID = 1.2 A 10 8 6 4 2 0 20 10 0 20 25 15 5 5 10 15 GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS) 0 2 4 Figure 7. Capacitance Variation 6 10 8 12 Qg, TOTAL GATE CHARGE (nC) 14 16 Figure 8. Gate Charge versus Gate–To–Source Voltage 100 SAFE OPERATING AREA INFORMATION I D , DRAIN CURRENT (AMPS) Forward Biased Safe Operating Area The FBSOA curves define the maximum drain–to–source voltage and drain current that a device can safely handle when it is forward biased, or when it is on, or being turned on. Because these curves include the limitations of simultaneous high voltage and high current, up to the rating of the device, they are especially useful to designers of linear systems. The curves are based on a case temperature of 25°C and a maximum junction temperature of 150°C. Limitations for repetitive pulses at various case temperatures can be determined by using the thermal response curves. Motorola Application Note, AN569, “Transient Thermal Resistance — General Data and Its Use” provides detailed instructions. 10 VGS = 20 V SINGLE PULSE TC = 25°C Mounted on 2” sq. FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with one die operating, 10s max. 100 µs 10 µs 10 ms 1 dc 0.1 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.01 0.1 10 1 100 VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 9. Maximum Rated Forward Biased Safe Operating Area Rthja(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE 10 1 0.1 D = 0.5 0.2 0.1 0.05 0.02 Normalized to θja at 10s. Chip 0.0175 Ω 0.0710 Ω 0.2706 Ω 0.0154 F 0.0854 F 0.3074 F 0.5776 Ω 0.7086 Ω 0.01 0.01 SINGLE PULSE 0.001 1.0E–05 1.0E–04 1.0E–03 1.0E–02 1.0E–01 t, TIME (s) 1.0E+00 1.7891 F 1.0E+01 107.55 F 1.0E+02 Ambient 1.0E+03 Figure 10. Thermal Response 4 Motorola TMOS Power MOSFET Transistor Device Data MMDF1N05E INFORMATION FOR USING THE SO–8 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self–align when subjected to a solder reflow process. 0.060 1.52 0.275 7.0 0.155 4.0 0.024 0.6 0.050 1.270 inches mm SO–8 POWER DISSIPATION The power dissipation of the SO–8 is a function of the input pad size. These can vary from the minimum pad size for soldering to the pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient; and the operating temperature, TA. Using the values provided on the data sheet for the SO–8 package, PD can be calculated as follows: PD = TJ(max) – TA RθJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 2.0 Watts. PD = 150°C – 25°C 62.5°C/W = 2.0 Watts The 62.5°C/W for the SO–8 package assumes the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 2.0 Watts using the footprint shown. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using board material such as Thermal Clad, the power dissipation can be doubled using the same footprint. SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C. Motorola TMOS Power MOSFET Transistor Device Data • The soldering temperature and time shall not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. 5 MMDF1N05E PACKAGE DIMENSIONS –A– M 1 4 R 4X 0.25 (0.010) –B– X 45 _ B M 5 P 8 NOTES: 1. DIMENSIONS A AND B ARE DATUMS AND T IS A DATUM SURFACE. 2. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 3. DIMENSIONS ARE IN MILLIMETER. 4. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 5. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 6. DIMENSION D DOES NOT INCLUDE MOLD PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. J M_ C F G –T– K SEATING PLANE 8X D 0.25 (0.010) M T B S A S CASE 751–05 SO–8 ISSUE P DIM A B C D F G J K M P R MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.18 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50 STYLE 11: PIN 1. 2. 3. 4. 5. 6. 7. 8. SOURCE 1 GATE 1 SOURCE 2 GATE 2 DRAIN 2 DRAIN 2 DRAIN 1 DRAIN 1 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 or 602–303–5454 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–81–3521–8315 MFAX: [email protected] – TOUCHTONE 602–244–6609 INTERNET: http://Design–NET.com ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 6 ◊ *MMDF1N05E/D* Motorola TMOS Power MOSFET TransistorMMDF1N05E/D Device Data