MOTOROLA MJ10000

Order this document
by MJ10000/D
SEMICONDUCTOR TECHNICAL DATA
 20 AMPERE
NPN SILICON
POWER DARLINGTON
TRANSISTORS
350 VOLTS
175 WATTS
The MJ10000 Darlington transistor is designed for high–voltage, high–speed,
power switching in inductive circuits where fall time is critical. It is particularly suited
for line operated switchmode applications such as:
•
•
•
•
•
Switching Regulators
Inverters
Solenoid and Relay Drivers
Motor Controls
Deflection Circuits
100_C Performance Specified for:
Reversed Biased SOA with Inductive Loads
Switching Times With Inductive Loads —
210 ns Inductive Fall Time (Typ)
Saturation Voltages
Leakage Currents
CASE 1–07
TO–204AA
(TO–3)
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v
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≈ 100
≈ 15
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
350
Vdc
Collector–Emitter Voltage
VCEX
400
Vdc
Collector–Emitter Voltage
VCEV
450
Vdc
Emitter Base Voltage
VEB
8
Vdc
Collector Current — Continuous
— Peak (1)
IC
ICM
20
30
Adc
Base Current — Continuous
— Peak (1)
IB
IBM
2.5
5
Adc
Total Power Dissipation @ TC = 25_C
@ TC =100_C
Derate above 25_C
PD
175
100
1
Watts
TJ, Tstg
– 65 to + 200
_C
Symbol
Max
Unit
RθJC
1
_C/W
TL
275
_C
Operating and Storage Junction Temperature Range
W/_C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 Seconds
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
10%.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
REV 4
 Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MJ10000
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
350
—
—
400
275
—
—
—
—
—
—
—
—
0.25
5
Unit
OFF CHARACTERISTICS (2)
Collector–Emitter Sustaining Voltage (Table 1)
(IC = 250 mA, IB = 0, Vclamp = Rated VCEO)
MJ10000
VCEO(sus)
Collector–Emitter Sustaining Voltage (Table 1, Figure 12)
IC = 2 A, Vclamp = Rated VCEX, TC = 100_C
IC = 10 A, Vclamp = Rated VCEX, TC = 100_C
MJ10000
MJ10000
Vdc
VCEX(sus)
Vdc
Collector Cutoff Current
(VCEV = Rated Value, VBE(off) = 1.5 Vdc)
(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 150_C)
ICEV
mAdc
Collector Cutoff Current
(VCE = Rated VCEV, RBE = 50 Ω, TC = 100_C)
ICER
—
—
5
mAdc
Emitter Cutoff Current
(VEB = 8 Vdc, IC = 0)
IEBO
—
—
150
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with base forward biased
IS/b
See Figure 11
Adc
ON CHARACTERISTICS (2)
DC Current Gain
(IC = 5 Adc, VCE = 5 Vdc)
(IC = 10 Adc, VCE = 5 Vdc)
hFE
—
50
40
—
—
600
400
—
—
—
—
—
—
1.9
3
2
—
—
—
—
2.5
2.5
Vf
—
3
5
Vdc
Small–Signal Current Gain
(IC = 1.0 Adc, VCE = 10 Vdc, ftest = 1 MHz)
hfe
10
—
—
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 100 kHz)
Cob
100
325
pF
td
tr
ts
tf
—
—
—
—
0.12
0.20
1.5
1.1
0.2
0.6
3.5
2.4
µs
µs
µs
µs
Collector–Emitter Saturation Voltage
(IC = 10 Adc, IB = 400 mAdc)
(IC = 20 Adc, IB = 1 Adc)
(IC = 10 Adc, IB = 400 mAdc, TC = 100_C)
VCE(sat)
Base–Emitter Saturation Voltage
(IC = 10 Adc, IB = 400 mAdc)
(IC = 10 Adc, IB = 400 mAdc, TC = 100_C)
VBE(sat)
Diode Forward Voltage (1)
(IF = 10 Adc)
Vdc
Vdc
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
Rise Time
Storage Time
Fall Time
(VCC = 250 Vdc, IC = 10 A,
IB1 = 400 mA, VBE(off) = 5 Vdc, tp = 50 µs,
Duty Cycle
2%)
Inductive Load, Clamped (Table 1)
Storage Time
Crossover Time
(IC = 10 A(pk), Vclamp = Rated VCEX, IB1 = 400 mA,
VBE(off) = 5 Vdc, TC = 100_C)
tsv
tc
—
—
3.5
1.5
5.5
3.7
µs
µs
Storage Time
Crossover Time
(IC = 10 A(pk), Vclamp = Rated VCEX, IB1 = 400 mA,
VBE(off) = 5 Vdc, TC = 25_C)
tsv
tc
—
—
1.0
0.7
—
—
µs
µs
(1) The internal Collector–to–Emitter diode can eliminate the need for an external diode to clamp inductive loads.
(1) Tests have shown that the Forward Recovery Voltage (Vf) of this diode Is comparable to that of typical fast recovery rectifiers.
(2) Pulse Test: Pulse Width = 300 µs, Duty Cycle
2%.
v
2
Motorola Bipolar Power Transistor Device Data
MJ10000
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
DC CHARACTERISTICS
500
TJ = 150°C
300
hFE, DC CURRENT GAIN
200
25°C
100
70
50
– 55°C
30
20
10
7
5
0.2 0.3
VCE = 5 V
2
3
0.5 0.7 1
5 7
IC, COLLECTOR CURRENT (AMP)
10
20
3
TJ = 25°C
2.6
10 A
15 A
1.4
1
0.02 0.03
0.2 0.3
0.5 0.7
0.05 0.07 0.1
IB, BASE CURRENT (ANP)
2
2.8
IC/IB = 25
VBE(sat) @ IC/IB = 25
VBE(on) @ VCE = 3 V
2.4
V, VOLTAGE (VOLTS)
2
1.6
TJ = – 55°C
1.2
25°C
0.8
TJ = 55°C
2
25°C
1.6
25°C
1.2
150°C
150°C
0.2 0.3
0.5 0.7 1
2
5
3
7
IC, COLLECTOR CURRENT (AMPS)
10
0.8
0.2 0.3
20
0.5 0.7 1
2
3
5 7
IC, COLLECTOR CURRENT (AMP)
Figure 3. Collector Emitter Saturation Voltages
Cob , OUTPUT CAPACITANCE (pF)
103
TJ = 125°C
100°C
101
75°C
100
25°C
10–1
– 0.2
20
1000
VCE = 250 V
102
10
Figure 4. Base-Emitter Voltage
104
IC, COLLECTOR CURRENT ( µA)
1
Figure 2. Collector Saturation Region
2.4
0.4
20 A
1.8
Figure 1. DC Current Gain
V, VOLTAGE (VOLTS)
IC = 5 A
2.2
0
TJ = 25°C
700
500
300
200
100
Cob
70
+ 0.2
+ 0.4
+ 0.6
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 5. Collector Cutoff Region
Motorola Bipolar Power Transistor Device Data
+ 0.8
50
0.4 0.6
1
2
4
6
10
20
40 60 100
200
400
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Output Capacitance
3
MJ10000
Table 1. Test Conditions for Dynamic Performance
VCEO(sus)
VCEX(sus) AND INDUCTIVE SWITCHING
RESISTIVE SWITCHING
INDUCTIVE TEST CIRCUIT
1
20
INPUT
CONDITIONS
TUT
1
0
INPUT
2
SEE ABOVE FOR
DETAILED CONDITIONS
CIRCUIT
VALUES
PW Varied to Attain
IC = 250 mA
Lcoil = 180 µH
Rcoil = 0.05 Ω
VCC = 20 V
TEST CIRCUITS
TUT
VCC
t1 Adjusted to
Obtain IC
t1 ≈
tf CLAMPED
t
t1
t2 ≈
tf
VCE
RS =
0.1 Ω
2
[ t2
IC(pk)
Lcoil
Vclamp
RESISTIVE TEST CIRCUIT
tf UNCLAMPED
Rcoil
1N4937
OR
EQUIVALENT
SEE ABOVE FOR
DETAILED CONDITIONS
VCC = 250 V
RL = 25 Ω
Pulse Width = 50 µs
Vclamp = Rated VCEX Value
IC
INPUT
VCC
OUTPUT WAVEFORMS
INDUCTIVE TEST CIRCUIT
1
Vclamp
Lcoil
RS =
0.1 Ω
2
Lcoil = 10 mH, VCC = 10 V
Rcoil = 0.7 Ω
Vclamp = VCEO(sus)
Rcoil
1N4937
OR
EQUIVALENT
Lcoil (IC
pk
TUT
)
1
VCC
Lcoil (IC
pk
VClamp
2
)
RL
VCC
Test Equipment
Scope — Tektronix
475 or Equivalent
VCE or
Vclamp
t
TIME
t2
SWITCHING TIMES NOTE
IC
Vclamp
90% Vclamp
trv
tsv
tfi
tti
tc
Vclamp
10%
Vclamp
90% IB1
10%
IC
2%
IC
IB
TIME
Figure 7. Inductive Switching Measurements
4
In resistive switching circuits, rise, fall, and storage times
have been defined and apply to both current and voltage
waveforms since they are in phase. However, for inductive
loads which are common to SWITCHMODE power supplies
and hammer drivers, current and voltage waveforms are not
in phase. Therefore, separate measurements must be made
on each waveform to determine the total switching time. For
this reason, the following new terms have been defined.
tsv = Voltage Storage Time, 90% IB1 to 10% Vclamp
trv = Voltage Rise Time, 10 – 90% Vclamp
tfi = Current Fall Time, 90 – 10% IC
tti = Current Tail, 10 – 2% IC
tc = Crossover Time, 10% Vclamp to 10% IC
An enlarged portion of the turn–off waveforms is shown in
Figure 7 to aid in the visual identity of these terms.
Motorola Bipolar Power Transistor Device Data
MJ10000
]
SWITCHING TIMES NOTE (continued)
For the designer, there is minimal switching loss during
storage time and the predominant switching power losses
occur during the crossover interval and can be obtained using the standard equation from AN–222:
PSWT = 1/2 VCCIC(tc)f
In general, trv + tfi
tc. However, at lower test currents this
relationship may not be valid.
As is common with most switching transistors, resistive
switching is specified at 25_C and has become a benchmark
for designers. However, for designers of high frequency converter circuits, the user oriented specifications which make
this a “SWITCHMODE” transistor are the inductive switching
speeds (tc and tsv) which are guaranteed at 100_C.
RESISTIVE SWITCHING PERFORMANCE
2
3
VBE(off) = 5 V
VCC = 250 V
IC/IB = 25
TJ = 25°C
t, TIME ( µs)
1
0.7
0.5
1
t, TIME ( µs)
2
td
0.3
tr
0.7
0.5
tf
0.3
VBF(off) = 5 V
VCC = 250 V
IC/IB = 25
TJ = 25°C
0.2
0.2
0.1
ts
1
2
7
10
3
5
IC, COLLECTOR CURRENT (AMP)
20
0.1
1
2
3
5
7
10
IC, COLLECTOR CURRENT (AMP)
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
Figure 8. Turn–On Time
1.0
0.7
0.5
0.3
20
Figure 9. Turn–Off Time
D = 0.5
0.2
0.2
0.1
0.1
0.07
0.05
P(pk)
ZθJC (t) = r(t) RθJC
RθJC = 1.0°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t1
READ TIME AT t1
t2
TJ(pk) – TC = P(pk) ZθJC(t)
DUTY CYCLE, D = t1/t2
0.05
0.02
0.03
0.02
0.01
0.01
0.01
0.02
SINGLE PULSE
0.05
0.1
0.2
0.5
1.0
2.0
5.0
t, TIME (ms)
10
20
50
100
200
500 1.0 k
Figure 10. Thermal Response
Motorola Bipolar Power Transistor Device Data
5
MJ10000
The Safe Operating Area figures shown in Figures 11 and 12 are
specified for these devices under the test conditions shown.
SAFE OPERATING AREA INFORMATION
FORWARD BIAS
IC, COLLECTOR CURRENT (AMPS)
50
10 µs
100 µs
20
10
1 ms
TC = 25°C
3.0
5 ms
1.0
0.5
dc
0.2
0.1
0.05
0.02
0.01
0.005
4.0
BONDING WIRE LIMITED
THERMALLY LIMITED
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED VCEO
MJ10000
MJ10001
7.0 10
20 30
50 70 100
200
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
350
400
Figure 11. Forward Bias Safe Operating Area
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 11 is based on TC = 25_C; T J(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when TC ≥ 25 _C. Second breakdown limitations do not
derate the same as thermal limitations. Allowable current at
the voltages shown on Figure 11 may be found at any case
temperature by using the appropriate curve on Figure 13.
TJ(pk) may be calculated from the data in Figure 10. At high
case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations imposed by second breakdown.
REVERSE BIAS
IC, COLLECTOR CURRENT (AMP)
20
TURN OFF LOAD LINE
BOUNDARY FOR MJ10001.
THE LOCUS FOR MJ10000
IS 50 V LESS
16
12
TJ
v 100°C
VBE(off) = 5 V
VBE(off) = 2 V
8
VBE(off) = 0 V
4
0
0
100
200
300
400
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
For inductive loads, high voltage and high current must be
sustained simultaneously during turn–off, in most cases, with
the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc. The safe level for these
devices is specified as V CEX(sus) at a given collector current
and represents a voltage–current condition that can be sustained during reverse biased turn–off. This rating is verified
under clamped conditions so that the device is never subjected to an avalanche mode. Figure 12 gives the complete
reverse bias safe operating area characteristics.
500
Figure 12. Reverse Bias Switching
Safe Operating Area
POWER DERATING FACTOR (%)
100
SECOND BREAKDOWN
DERATING
80
60
THERMAL DERATING
20
0
0
40
160
80
120
TC, CASE TEMPERATURE (°C)
200
Figure 13. Power Derating
6
Motorola Bipolar Power Transistor Device Data
MJ10000
PACKAGE DIMENSIONS
A
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO–204AA OUTLINE SHALL APPLY.
C
–T–
E
D
K
2 PL
0.13 (0.005)
U
T Q
M
M
Y
M
–Y–
L
V
SEATING
PLANE
2
H
G
B
M
T Y
1
–Q–
0.13 (0.005)
M
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
INCHES
MIN
MAX
1.550 REF
–––
1.050
0.250
0.335
0.038
0.043
0.055
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
–––
0.830
0.151
0.165
1.187 BSC
0.131
0.188
MILLIMETERS
MIN
MAX
39.37 REF
–––
26.67
6.35
8.51
0.97
1.09
1.40
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
–––
21.08
3.84
4.19
30.15 BSC
3.33
4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
CASE 1–07
TO–204AA (TO–3)
ISSUE Z
Motorola Bipolar Power Transistor Device Data
7
MJ10000
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8
◊
Motorola Bipolar Power Transistor Device Data
*MJ10000/D*
MJ10000/D