MITSUBISHI SEMICONDUCTOR GaAs FET MGF0910A L, S BAND POWER GaAs FET DESCRIPTION The MGF0910A, GaAs FET with an N-channel schottky gate, is OUTLINE DRAWING designed for use in UHF band amplifiers. Unit:millimeters 17.5 FEATURES 1 1.0 • Class A operation • High output power P1dB=38dBm(TYP) @2.3GHz 2-R1.25 • High power gain GLP=11dB(TYP) 2 @2.3GHz 2 • High power added efficiency ηadd=45%(TYP) 3 @2.3GHz,P1dB 14.3 • Hermetically sealed metal-ceramic package with ceramic lid 9.4 APPLICATION UHF band power amplifiers QUALITY GRADE • IG 10.0 RECOMMENDED BIAS CONDITIONS • VDS=10V 1 GATE • ID=1.3A 2 SOURCE(FLANGE) 3 DRAIN GF-21 • Rg=100Ω • Refer to Bias Procedure ABSOLUTE MAXIMUM RATINGS (Ta=25˚C) Symbol VGDO VGSO ID IGR IGF PT Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation Channel temperature Storage temperature Ratings *1 -15 -15 5 15 31.5 27.3 175 -65 to +175 Unit V V A mA mA W ˚C ˚C *1:TC=25˚C ELECTRICAL CHARACTERISTICS (Ta=25˚C) Symbol IDSS gm VGS(off) P1dB GLP ηadd Rth(ch-c) Test conditions Parameter Saturated drain current Transconductance Gate to source cut-off voltage Output power at 1dB gain compression VDS=3V,VGS=0V VDS=3V,ID=1.3A VDS=3V,ID=10mA VDS=10V,ID 1.3A,f=2.3GHz Linear power gain *2 Power added efficiency at P1dB Thermal resistance *1 ∆Vf method Min – – -2 Limits Typ – 1.5 – Max 5.0 – -5 37 38 – dBm 10 – – 11 45 – – – 5.5 dB % ˚C/W Unit A S V *1:Channel to case *2:Pin=22dBm Nov. ´97 MITSUBISHI SEMICONDUCTOR GaAs FET MGF0910A L, S BAND POWER GaAs FET TYPICAL CHARACTERISTICS ID vs. VGS ID vs. VDS 6 6 VDS=3V Ta=25˚C VGS=-0.5V/Step Ta=25˚C VGS=0V 4 4 2 2 0 -3 -2 -1 0 0 1 0 2 3 4 5 6 GATE TO SOURCE VOLTAGE VGS(V) DRAIN TO SOURCE VOLTAGE VDS(V) PO & add vs. Pin (f=2.3GHz) GLP,P1dB, ID and add vs. VDS (f=2.3GHz) 40 Gp=11 10 9 dB VDS=10V ID=1.3A 13 ID=1.3A GLP 12 11 10 PO 39 P1dB 30 37 ηadd 20 0 20 30 INPUT POWER Pin(dBm) 50 40 30 20 10 0 35 ηadd 40 20 6 8 10 VDS(V) Nov. ´97 MITSUBISHI SEMICONDUCTOR GaAs FET MGF0910A L, S BAND POWER GaAs FET S11 ,S22 vs. f. S21 ,S12 vs. f. +90˚ +j50 +j25 +j10 +j100 3.0GHz 3.0GHz +j250 S21 3.0GHz S11 0.5GHz S22 0 25 50 100 250 ±180˚ 5 4 3 2 1 0 S12 0.5GHz 0˚ I S 21 I -j10 -j250 0.5GHz 0.1 -j25 -j100 -j50 Ta=25˚C VDS=10V ID=1.3A 0.2 -90˚ S PARAMETERS (Ta=25˚C,VDS=10V,ID=1.3A) Freq. (GHz) Magn. 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 0.962 0.961 0.960 0.959 0.958 0.957 0.956 0.955 0.954 0.952 0.950 0.948 0.946 0.944 0.941 0.938 0.934 0.930 0.926 0.922 0.918 0.913 0.907 0.902 0.895 0.885 S11 Angle(deg.) -155.5 -159.7 -163.4 -166.8 -168.4 -171.3 -173.8 -175.4 -176.8 -178.7 -179.7 178.4 177.2 176.0 174.7 174.3 173.3 172.3 171.2 169.9 169.0 167.6 166.1 164.6 163.3 162.0 Magn. 3.762 3.339 2.768 2.460 2.219 2.021 1.830 1.691 1.590 1.500 1.425 1.352 1.330 1.255 1.201 1.040 0.993 0.977 0.949 0.921 0.909 0.900 0.876 0.873 0.843 0.832 S21 Angle(deg.) 97.8 93.6 90.8 87.5 87.1 84.1 82.2 80.2 78.0 75.7 73.7 71.6 69.9 67.7 66.2 65.3 63.3 61.7 59.1 57.0 55.4 54.3 52.2 49.9 48.4 45.5 Magn. 0.0080 0.0090 0.0110 0.0130 0.0140 0.0149 0.0156 0.0172 0.0182 0.0189 0.0192 0.0195 0.0219 0.0224 0.0225 0.0235 0.0239 0.0249 0.0258 0.0265 0.0275 0.0280 0.0286 0.0296 0.0310 0.0320 S12 Angle(deg.) 50.0 49.9 48.5 47.5 46.5 46.0 45.6 44.6 44.0 43.5 42.3 40.9 40.3 39.0 38.5 38.0 37.2 36.5 35.8 35.3 34.6 33.6 32.5 31.2 30.2 29.1 Magn. 0.869 0.869 0.867 0.865 0.860 0.854 0.845 0.840 0.832 0.825 0.818 0.805 0.795 0.782 0.773 0.757 0.750 0.740 0.725 0.708 0.687 0.672 0.662 0.642 0.629 0.610 S22 Angle(deg.) -177.6 -179.6 178.5 178.2 177.6 176.8 175.6 176.6 176.1 175.7 175.3 175.1 174.7 174.0 173.4 174.4 174.2 173.4 172.7 172.2 171.6 170.3 168.9 167.7 166.9 159.4 K MSG/MAG (dB) 0.752 0.795 0.835 0.842 0.883 0.902 0.943 1.025 1.055 1.085 1.125 1.175 1.195 1.212 1.256 1.285 1.295 1.305 1.355 1.395 1.415 1.435 1.454 1.475 1.495 1.525 25.0 24.8 24.7 23.5 23.0 23.1 22.4 21.5 20.0 19.0 18.5 17.8 17.0 16.9 16.0 15.4 14.8 14.5 14.2 13.8 13.5 12.8 12.3 11.9 10.8 10.5 Nov. ´97