Order this document by MJW16010A/D SEMICONDUCTOR TECHNICAL DATA *Motorola Preferred Device 1 kV SWITCHMODE Series These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated switchmode applications. Typical Applications: Features: • • • • • • Switching Regulators Inverters Solenoids Relay Drivers Motor Controls Deflection Circuits POWER TRANSISTORS 15 AMPERES 500 VOLTS 125 AND 175 WATTS • Collector–Emitter Voltage — VCEV = 1000 Vdc • Fast Turn–Off Times 50 ns Inductive Fall Time — 100_C (Typ) 90 ns Inductive Crossover Time — 100_C (Typ) 900 ns Inductive Storage Time — 100_C (Typ) • 100_C Performance Specified for: Reverse–Biased SOA with Inductive Load Switching Times with Inductive Loads Saturation Voltages Leakage Currents • Extended FBSOA Rating Using Ultra–fast Rectifiers • Extremely High RBSOA Capability ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ vÎÎÎÎ MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 500 Vdc Collector–Emitter Voltage VCEV 1000 Vdc Emitter–Base Voltage VEB 6 Vdc Collector Current— Continuous — Peak(1) IC ICM 15 20 Adc Base Current — Continuous — Peak(1) IB IBM 10 15 Adc Total Power Dissipation @ TC = 25_C @ TC = 100_C Derate above TC = 25_C PD 135 54 1.09 Watts TJ, Tstg – 55 to 150 IC Symbol Max Unit RθJC 0.92 _C/W TL 275 _C Operating and Storage Junction Temperature Range CASE 340F–03 TO–247AE W/_C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%. Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Preferred devices are Motorola recommended choices for future use and best overall value. Designer’s and SWITCHMODE are trademarks of Motorola, Inc. REV 3 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MJW16010A ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v ÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VCEO(sus) 500 — — Vdc — — 0.003 0.020 0.15 1.0 OFF CHARACTERISTICS(1) Collector–Emitter Sustaining Voltage (Table 1) (IC = 100 mA, IB = 0) Collector Cutoff Current (VCEV = 1000 Vdc, VBE(off) = 1.5 Vdc) (VCEV = 1000 Vdc, VBE(off) = 1.5 Vdc, TC = 100_C) ICEV mAdc Collector Cutoff Current (VCE = 1000 Vdc, RBE = 50 Ω, TC = 100_C) ICER — 0.020 1.0 mAdc Emitter Cutoff Current (VEB = 6 Vdc, IC = 0) IEBO — 0.005 0.15 mAdc SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased Clamped Inductive SOA with Base Reverse Biased IS/b See Figure 14a or 14b RBSOA See Figure 15 ON CHARACTERISTICS(1) Collector–Emitter Saturation Voltage (IC = 5 Adc, IB = 1 Adc) (IC = 10 Adc, IB = 2 Adc) (IC = 10 Adc, IB = 2 Adc, TC = 100_C) VCE(sat) Base–Emitter Saturation Voltage (IC = 10 Adc, IB = 2 Adc) (IC = 10 Adc, IB = 2 Adc, TC = 100_C) VBE(sat) DC Current Gain (IC = 15 Adc, VCE = 5 Vdc) Vdc — — — 0.25 0.45 0.60 0.7 1 1.5 — — 1.2 1.2 1.5 1.5 hFE 5 8 — — Cob — — 400 pF tsv — 900 2000 ns tfi — 50 250 tc — 90 300 tsv — 1100 — tfi — 70 — tc — 120 — td — 25 100 tr — 325 600 ts — 1300 3000 tf — 175 400 ts — 700 — tf — 80 — Vdc DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 kHz) SWITCHING CHARACTERISTICS Inductive Load (Table 1) Storage Time (TJ = 100_C) Fall Time Crossover Time Storage Time Fall Time (IC = 10 Adc, IB1 = 1.3 Adc, VBE(off) = 5 Vdc, VCE(pk) = 400 Vdc) (TJ = 150_C) Crossover Time Resistive Load (Table 2) Delay Time Rise Time Storage Time Fall Time Storage Time (IC = 10 Adc, VCC = 250 Vdc, IB1 = 1.3 Adc, PW = 30 µs, Duty Cycle 2%) (IB2 = 2.6 Adc, RB2 = 1.6 Ω) (VBE(off) = 5 Vdc) Fall Time (1) Pulse Test: PW = 300 µs, Duty Cycle 2 ns 2%. Motorola Bipolar Power Transistor Device Data MJW16010A VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) TYPICAL STATIC CHARACTERISTICS 50 TJ = 100°C 30 hFE, DC CURRENT GAIN VCE = 5 V 25°C 20 – 55°C 10 7 5 3 0.2 0.3 0.5 1 2 5 3 IC, COLLECTOR CURRENT (AMPS) 10 20 5 3 2 1 0.5 IC/IB = 10 TJ = 25°C 0.3 0.2 IC/IB = 5 TJ = 25°C 0.1 0.05 0.15 0.2 0.3 Figure 1. DC Current Gain 1 3 5 0.5 2 IC, COLLECTOR CURRENT (AMPS) 10 15 Figure 2. Collector–Emitter Saturation Region 10 1.5 VBE, BASE–EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) IC/IB = 10 TJ = 100°C 5 2 15 A 1 0.5 10 A 5A 0.2 IC = 1 A 0.1 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 1 IC/IB = 10 TJ = 25°C IC/IB = 10 TJ = 100°C 0.5 0.3 0.2 0.15 0.15 0.2 0.3 0.5 1 2 3 5 10 IB, BASE CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 3. Collector–Emitter Saturation Region Figure 4. Base–Emitter Saturation Region 15 C, CAPACITANCE (pF) 10 k 5k 3k 2k Cib 1k 500 300 200 Cob 100 TC = 25°C 50 20 10 0.1 0.3 0.5 5 10 20 30 50 100 1 2 VR, REVERSE VOLTAGE (VOLTS) 300 500 850 Figure 5. Capacitance Motorola Bipolar Power Transistor Device Data 3 MJW16010A TYPICAL INDUCTIVE SWITCHING CHARACTERISTICS IC/IB1 = 5, TC = 75°C, VCE(pk) = 400 V IC/IB1 = 10, TC = 75°C, VCE(pk) = 400 V 5000 3000 2000 VBE(off) = 0 V 1000 5V 3000 2000 2V t sv, STORAGE TIME (ns) t sv, STORAGE TIME (ns) 5000 500 300 200 100 0.07 0.05 1.5 VBE(off) = 0 V 2V 1000 700 500 5V 300 200 100 2 3 5 10 7 0.05 1.5 15 2 Figure 6. Storage Time tfi, COLLECTOR CURRENT FALL TIME (ns) tfi, COLLECTOR CURRENT FALL TIME (ns) VBE(off) = 0 V 300 200 5V 100 2V 50 20 2 3 5 7 10 500 15 300 200 100 2V 50 5V 20 10 1.5 15 VBE(off) = 0 V 2 3 5 7 10 15 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 8. Collector Current Fall Time Figure 9. Collector Current Fall Time 1500 1000 1500 1000 VBE(off) = 0 V t c , CROSSOVER TIME (ns) t c , CROSSOVER TIME (ns) 10 1000 500 500 300 200 5V 2V 100 50 20 500 VBE(off) = 0 V 300 200 100 2V 50 5V 20 2 3 5 7 IC, COLLECTOR CURRENT (AMPS) Figure 10. Crossover Time 4 7 Figure 7. Storage Time 1000 15 1.5 5 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) 10 1.5 3 10 15 15 1.5 2 3 5 7 10 IC, COLLECTOR CURRENT (AMPS) Figure 11. Crossover Time Motorola Bipolar Power Transistor Device Data 15 MJW16010A Table 1. Inductive Load Switching Drive Circuit VCEO(sus) L = 10 mH RB2 = ∞ VCC = 20 Volts IC(pk) = 100 mA +15 1 µF 150 Ω 100 µF 100 Ω MTP8P10 MTP8P10 A +10 MPF930 RB2 50 Ω MUR105 MJE210 1 µF 150 Ω Voff *Tektronix AM503 *P6302 or Equivalent Scope — Tektronix 7403 or Equivalent T1 IB2 *IC T1 L T.U.T. 1N4246GP +V *IB Vclamp 0V VCC –V I B2 , REVERSE BASE CURRENT (AMPS) 10 IC(pk) VCE(pk) 90% VCE(pk) tsv 90% IC(pk) trv tfi tti tc 10% VCE(pk) VCE IB IB1 IB A (ICpk) [ LcoilVCC T1 adjusted to obtain IC(pk) Note: Adjust Voff to obtain desired VBE(off) at Point A. IC VCE RBSOA L = 200 µH RB2 = 0 VCC = 20 Volts RB1 selected for desired IB1 MTP12N10 500 µF VCE(pk) Inductive Switching L = 200 µH RB2 = 0 VCC = 20 Volts RB1 selected for desired IB1 RB1 MPF930 IC(pk) IC 90% IB1 10% IC(pk) 2% IC 9 8 7 6 4 1A 3 IC = 10 A TC = 25°C 2 1 0 t, TIME IB1 = 2 A 5 4 1 2 3 VBE(off), REVERSE BASE VOLTAGE (VOLTS) 0 Figure 12. Inductive Switching Measurements 5 Figure 13. Peak Reverse Base Current Table 2. Resistive Load Switching +15 td and tr H.P. 214 OR EQUIV. P.G. ts and tf 1 µF 150 Ω 100 µF 100 Ω MTP8P10 MTP8P10 *IC *IB T.U.T. RB = 8.5 Ω RL 50 V(off) adjusted to give specified off drive RB1 MPF930 A +10 V MPF930 VCC RB2 50 Ω MUR105 MTP12N10 Vin ≈ 11 V 0V tr ≤ 15 ns VCC 250 Vdc VCC 250 V RL 25 Ω IC 10 A IC 10 A IB1 1.3 A IB 1.3 A IB2 Per Spec RB1 11.5 Ω RB2 Per Spec RL 25 Ω *Tektronix AM503 *P6302 or Equivalent Motorola Bipolar Power Transistor Device Data MJE210 500 µF 1 µF 150 Ω Voff T.U.T. A *IB *IC RL VCC 5 MJW16010A ÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉ GUARANTEED OPERATING AREA INFORMATION IC, COLLECTOR CURRENT (AMPS) 30 20 10 5 3 1 10 µs TC = 25°C 1 ms REGION II — EXPANDED FBSOA USING MUR8100 ULTRA–FAST RECTIFIER, SEE FIGURE 17 0.5 0.3 0.2 100 ns dc II BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 0.1 0.05 0.03 10 100 1000 1 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 14. Maximum Rated Forward Biased Safe Operating Area 100 POWER DERATING FACTOR (%) IC, COLLECTOR CURRENT (AMPS) 20 16 12 8 VBE(off) = 5 V IC/IB1 ≥ 4 TJ ≤ 100°C 4 80 SECOND BREAKDOWN DERATING 60 THERMAL DERATING 40 20 VBE(off) = 0 V 0 0 600 800 200 400 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 1000 0 0 40 Figure 15. Maximum Reverse Biased Safe Operating Area 80 120 TC, CASE TEMPERATURE (°C) 160 Figure 16. Power Derating VCE (1000 V MAX) +15 150 Ω 1 µF 100 Ω 100 µF 10 µF MTP8P10 MTP8P10 RB1 10 mH MUR8100 MUR1100 MPF930 MUR105 +10 T.U.T. MPF930 RB2 MUR105 50 Ω MTP12N10 MJE210 500 µF 150 Ω 1 µF Note: Test Circuit for Ultra–fast FBSOA Note: RB2 = 0 and VOff = – 5 Volts Voff Figure 17. Switching Safe Operating Area 6 Motorola Bipolar Power Transistor Device Data 200 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) MJW16010A 1 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 0.03 P(pk) RθJC(t) = r(t) RθJC RθJC = 1 or 0.92°CW TJ(pk) – TC = P(pk) RθJC(t) 0.03 0.02 0.02 0.01 0.01 t1 SINGLE PULSE 0.02 0.03 0.05 0.1 t2 DUTY CYCLE, D = t1/t2 0.2 0.3 0.5 1 2 3 5 t, TIME (ms) 10 20 30 50 100 200 300 500 1000 Figure 18. Thermal Response SAFE OPERATING AREA INFORMATION FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figures 14a and 14b is based on TC = 25 _C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC ≥ 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figures 14a and 14b may be found at any case temperature by using the appropriate curve on Figure 16. TJ(pk) may be calculated from the data in Figure 18. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. REVERSE BIAS For inductive loads, high voltage and high current must be sustained simultaneously during turn–off, in most cases, with the base–to–emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Biased Safe Operating Area and represents the voltage–current condition allowable during reverse biased turn–off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 15 gives the RBSOA characteristics. SWITCHMODE DESIGN CONSIDERATIONS 1. FBSOA — Allowable dc power dissipation in bipolar power transistors decreases dramatically with increasing collector–emitter Motorola Bipolar Power Transistor Device Data voltage. A transistor which safely dissipates 100 watts at 10 volts will typically dissipate less than 10 watts at its rated V CEO(sus). From a power handling point of view, current and voltage are not interchangeable (see Application Note AN875). 2. TURN–ON — Safe turn–on load line excursions are bounded by pulsed FBSOA curves. The 10 µs curve applies for resistive loads, most capacitive loads, and inductive loads that are clamped by standard or fast recovery rectifiers. Similarly, the 100 ns curve applies to inductive loads which are clamped by ultra– fast recovery rectifiers, and are valid for turn–on crossover times less than 100 ns (see Application Note AN952). At voltages above 75% of V CEO(sus), it is essential to provide the transistor with an adequate amount of base drive VERY RAPIDLY at turn–on. More specifically, safe operation according to the curves is dependent upon base current rise time being less than collector current rise time. As a general rule, a base drive compliance voltage in excess of 10 volts is required to meet this condition (see Application Note AN875). 3. TURN–OFF — A bipolar transistor’s ability to withstand turn–off stress is dependent upon its forward base drive. Gross overdrive violates the RBSOA curve and risks transistor failure. For this reason, circuits which use fixed base drive are often more likely to fail at light loads due to heavy overdrive (see Application Note AN875). 4. OPERATION ABOVE VCEO(sus) — When bipolars are operated above collector–emitter breakdown, base drive is crucial. A rapid application of adequate forward base current is needed for safe turn–on, as is a stiff negative bias needed for safe turn–off. Any hiccup in the base–drive circuitry that even momentarily violates either of these conditions will likely cause the transistor to fail. Therefore, it is important to design the driver so that its output is negative in the absence of anything but a clean crisp input signal (see Application Note AN952). 7 MJW16010A SWITCHMODE III DESIGN CONSIDERATIONS (Cont.) 5. RBSOA — Reverse Biased Safe Operating Area has a first order dependency on circuit configuration and drive parameters. The RBSOA curves in this data sheet are valid only for the conditions specified. For a comparison of RBSOA results in several types of circuits (see Application Note AN951). 6. DESIGN SAMPLES — Transistor parameters tend to vary much more from wafer lot to wafer lot, over long periods of time, than from one de- 8 vice to the next in the same wafer lot. For design evaluation it is advisable to use transistors from several different date codes. 7. BAKER CLAMPS — Many unanticipated pitfalls can be avoided by using Baker Clamps. MUR105 and MUR1100 diodes are recommended for base drives less than 1 amp. Similarly, MUR405 and MUR4100 types are well–suited for higher drive requirements (see Article Reprint AR131). Motorola Bipolar Power Transistor Device Data MJW16010A PACKAGE DIMENSIONS 0.25 (0.010) M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. –T– –Q– T B M E –B– C 4 U A R 1 K 2 3 –Y– P F V D 0.25 (0.010) M L Y Q S H J G DIM A B C D E F G H J K L P Q R U V MILLIMETERS MIN MAX 20.40 20.90 15.44 15.95 4.70 5.21 1.09 1.30 1.50 1.63 1.80 2.18 5.45 BSC 2.56 2.87 0.48 0.68 15.57 16.08 7.26 7.50 3.10 3.38 3.50 3.70 3.30 3.80 5.30 BSC 3.05 3.40 STYLE 3: PIN 1. 2. 3. 4. INCHES MIN MAX 0.803 0.823 0.608 0.628 0.185 0.205 0.043 0.051 0.059 0.064 0.071 0.086 0.215 BSC 0.101 0.113 0.019 0.027 0.613 0.633 0.286 0.295 0.122 0.133 0.138 0.145 0.130 0.150 0.209 BSC 0.120 0.134 BASE COLLECTOR EMITTER COLLECTOR CASE 340F–03 ISSUE E Motorola Bipolar Power Transistor Device Data 9 MJW16010A Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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