MC10EPT20 LVTTL/LVCMOS to Differential LVPECL Translator The MC10EPT20 is a LVTTL/LVCMOS to differential LVPECL translator. Because LVPECL (Positive ECL) levels are used only +3.3V and ground are required. The small outline 8–lead SOIC package and the single gate of the EPT20 makes it ideal for those applications where space, performance, and low power are at a premium. • • • • • • • • • • • 390ps Typical Propagation Delay High Bandwidth to 1.0 GHz Typical Differential LVPECL Outputs Small Outline SOIC Package PNP LVTTL Inputs for Minimal Loading VCC Range of 3.0V to 3.6V ESD Protection: >1.5KV HBM, >200V MM Q Output will default HIGH with inputs open Moisture Sensitivity Level 1, Indefinite Time Out of Drypack. For Additional Information, See Application Note AND8003/D Flammability Rating: UL–94 code V–0 @ 1/8”, Oxygen Index 28 to 34 Transistor Count = 150 devices http://onsemi.com 8 1 SO–8 D SUFFIX CASE 751 MARKING DIAGRAM 8 HPT20 ALYW A L Y W = Assembly Location = Wafer Lot = Year = Work Week 1 *For additional information, see Application Note AND8002/D NC Q Q 1 8 LVTTL 2 3 7 VCC D 6 NC 5 GND PIN DESCRIPTION PIN FUNCTION Q, Q Differential LVPECL Outputs D LVTTL Input VCC Positive Supply GND Ground LVPECL NC 4 ORDERING INFORMATION Device Figure 1. 8–Lead Pinout (Top View) and Logic Diagram Semiconductor Components Industries, LLC, 1999 September, 1999 – Rev. 1.0 1 Package Shipping MC10EPT20D SOIC 98 Units/Rail MC10EPT20DR2 SOIC 2500 Tape & Reel Publication Order Number: MC10EPT20/D MC10EPT20 MAXIMUM RATINGS* Value Unit VCC Symbol Power Supply Parameter 6.0 to 0 VDC VI Input Voltage (VI not more positive than VCC) 6.0 to 0 VDC Iout Output Current 50 100 mA TA Operating Temperature Range –40 to +85 °C Tstg Storage Temperature –65 to +150 °C θJA Thermal Resistance (Junction–to–Ambient) 190 130 °C/W θJC Thermal Resistance (Junction–to–Case) 41 to 44 ± 5% °C/W Tsol Solder Temperature (<2 to 3 Seconds: 245°C desired) 265 °C Continuous Surge Still Air 500lfpm * Maximum Ratings are those values beyond which damage to the device may occur. LVTTL INPUT DC CHARACTERISTICS (VCC = 3.3V ±0.3V; GND = 0V; TA = –40°C to +85°C) Symbol Characteristic Min Typ Max Unit 20 µA IIH Input HIGH Current (Vin = 2.7V) IIHH Input HIGH Current MAX (Vin = 6.0V) 100 µA IIL Input LOW Current (Vin = 0.5V) –0.6 mA VIK Input Clamp Voltage (Iin = –18mA) –1.2 V VIH Input HIGH Voltage VIL Input LOW Voltage 2.0 V 0.8 V LVPECL OUTPUT DC CHARACTERISTICS (VCC = 3.3V ± 0.3V; GND = 0V) (Note 3.) –40°C Symbol Characteristic 25°C 85°C Min Typ Max Min Typ Max Min Typ Max Unit 15 23 31 15 23 31 15 23 31 mA ICC Power Supply Current HIGH (Note 1.) VOH Output HIGH Voltage (Note 3.) 2165 2310 2415 2230 2355 2480 2290 2375 2540 mV VOL Output LOW Voltage (Note 3.) 1365 1550 1615 1430 1570 1680 1490 1580 1740 mV NOTE: 10EP circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500lfpm is maintained. 1. VCC = 3.3V, GND = 0V, all other pins floating. 2. All loading with 50 ohms to VCC–2.0 volts. 3. Output parameters vary 1:1 with VCC. AC CHARACTERISTICS (VCC = 3.3V ± 0.3V; GND = 0V) –40°C Symbol Characteristic fmax Maximum Toggle Frequency (Note 4.) tPLH, tPHL Propagation Delay to Output Differential tJITTER Cycle–to–Cycle Jitter Min Typ 25°C Max Min 1000 Typ 85°C Max Min 1000 Typ Max 1000 Unit MHz ps 150 350 600 150 TBD 370 600 150 TBD tr Output Rise/Fall Times tf (20% – 80%) Q, Q 50 100 180 60 120 4. Fmax guaranteed for functionality only. VOL and VOH levels are guaranteed at DC only. http://onsemi.com 2 380 600 TBD ps ps 200 70 140 220 MC10EPT20 PACKAGE DIMENSIONS SO–8 D SUFFIX PLASTIC SOIC PACKAGE CASE 751–06 ISSUE T D A 8 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. DIMENSIONS ARE IN MILLIMETER. 3. DIMENSION D AND E DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 5. DIMENSION B DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS OF THE B DIMENSION AT MAXIMUM MATERIAL CONDITION. C 5 0.25 H E M B M 1 4 h B e X 45 _ q A C SEATING PLANE L 0.10 A1 B 0.25 M C B S A S DIM A A1 B C D E e H h L q http://onsemi.com 3 MILLIMETERS MIN MAX 1.35 1.75 0.10 0.25 0.35 0.49 0.19 0.25 4.80 5.00 3.80 4.00 1.27 BSC 5.80 6.20 0.25 0.50 0.40 1.25 0_ 7_ MC10EPT20 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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