Low Power, 180 MHz Buffer Amplifier Features General Description # # # # # # # # # # The EL2002 is a low cost monolithic, high slew rate, buffer amplifier. Built using the Elantec monolithic Complementary Bipolar process, this patented buffer has a b 3 dB bandwidth of 180 MHz, and delivers 100 mA, yet draws only 5 mA of supply current. It typically operates from g 15V power supplies but will work with as little as g 5V. 180 MHz bandwidth 2000 V/ms slew rate Low bias current, 3 mA typical 100 mA output current 5 mA supply current Short circuit protected Low cost Stable with capacitive loads Wide supply range g 5V to g 15V No thermal runaway Applications # # # # Op amp output current booster Cable/line driver A/D input buffer Isolation buffer Ordering Information Package OutlineÝ EL2002ACN Part No. Temp. Range 0§ C to a 75§ C P-DIP MDP0031 EL2002CM 0§ C to a 75§ C 20-Lead SOL MDP0027 EL2002CN 0§ C to a 75§ C P-DIP MDP0031 EL2002C EL2002C This high speed buffer may be used in a wide variety of applications in military, video and medical systems. Typical examples include fast op-amp output current boosters, coaxial cable drivers and A/D converter input buffers. Elantec’s products and facilities comply with MIL-I-45208A, and other applicable quality specifications. For information on Elantec’s processing, see the Elantec document, QRA-1: Elantec’s Processing, Monolithic Integrated Circuits. Connection Diagrams EL2002 DIP Pinout EL2002 SOL Pinout 2002 – 1 Top View 2002 – 2 Top View Note: All information contained in this data sheet has been carefully checked and is believed to be accurate as of the date of publication; however, this data sheet cannot be a ‘‘controlled document’’. Current revisions, if any, to these specifications are maintained at the factory and are available upon your request. We recommend checking the revision level before finalization of your design documentation. © 1989 Elantec, Inc. December 1995 Rev D Manufactured Under U.S. Patent No. 4,833,424 and U.K. Patent No. 2217134. EL2002C Low Power, 180 MHz Buffer Amplifier Absolute Maximum Ratings Supply Voltage (V a bVb) Input Voltage (Note 1) Input Current (Note 1) Power Dissipation (Note 2) Output Short Circuit Duration (Note 3) VS VIN IIN PD TA g 18V or 36V g 15V or VS TJ TST g 50 mA See Curves Operating Temperature Range: EL2002AC/EL2002C Operating Junction Temperature Storage Temperature 0§ C to a 75§ C 150§ C b 65§ C to a 150§ C Continuous Important Note: All parameters having Min/Max specifications are guaranteed. The Test Level column indicates the specific device testing actually performed during production and Quality inspection. Elantec performs most electrical tests using modern high-speed automatic test equipment, specifically the LTX77 Series system. Unless otherwise noted, all tests are pulsed tests, therefore TJ e TC e TA. Test Level I II III IV V Test Procedure 100% production tested and QA sample tested per QA test plan QCX0002. 100% production tested at TA e 25§ C and QA sample tested at TA e 25§ C , TMAX and TMIN per QA test plan QCX0002. QA sample tested per QA test plan QCX0002. Parameter is guaranteed (but not tested) by Design and Characterization Data. Parameter is typical value at TA e 25§ C for information purposes only. Electrical Characteristics VS e g 15V, RS e 50X, unless otherwise specified Parameter VOS IIN RIN AV1 AV2 EL2002AC EL2002C Limits Description Units VIN Load Temp Min Typ Max Test Level Offset Voltage EL2002A/EL2002AC 0 % 25§ C b 15 5 a 15 I mV TMIN, TMAX b 20 a 20 III mV EL2002/EL2002C 0 25§ C b 40 a 40 I mV TMIN, TMAX b 50 a 50 III mV a 10 I mA a 15 III mA a 15 I mA a 20 III mA I MX III MX % Input Current EL2002A/EL2002AC 0 EL2002/EL2002C 0 % a 12V 100X Input Resistance Voltage Gain Voltage Gain g 12V g 10V 25§ C b 10 TMIN, TMAX b 15 25§ C b 15 TMIN, TMAX b 20 25§ C 1 TMIN, TMAX 0.1 % 25§ C 0.990 TMIN, TMAX 0.985 25§ C 0.85 TMIN, TMAX 0.83 % 100X 2 10 3 5 3 0.998 0.93 I V/V III V/V I V/V III V/V TD is 3.3in Test Conditions EL2002C Low Power, 180 MHz Buffer Amplifier Electrical Characteristics VS e g 15V, RS e 50X, unless otherwise specified Ð Contd. Parameter Description VIN Load Voltage Gain with VS e g 5V g 3V 100X VO Output Voltage Swing g 12V 100X ROUT Output Resistance g 2V 100X AV3 Temp Min Typ 0.91 25§ C 0.83 TMIN, TMAX 0.80 25§ C g 10 TMIN, TMAX g 9.5 25§ C IS Output Current Supply Current g 12V 8 0 25§ C a 100 TMIN, TMAX g 95 (Note 4) 25§ C % 5 Supply Rejection, (Note 5) tr 25§ C 60 TMIN, TMAX 50 Units I V/V III V/V I V III V I X 15 III X I mA III mA 7.5 II mA 10 III mA I dB 0 % III dB Rise Time 0.5V 100X 25§ C 2.8 V ns td Propagation Delay 0.5V 100X 25§ C 1.5 V ns SR Slew Rate, (Note 6) g 10V 100X 25§ C 2000 IV V/ms 1200 75 Test Level 13 a 160 TMIN, TMAX PSRR Max g 11 TMIN, TMAX IOUT EL2002AC EL2002C Limits Note 1: If the input exceeds the ratings shown (or the supplies) or if the input to output voltage exceeds g 7.5V then the input current must be limited to g 50 mA. See the applications section for more information. Note 2: The maximum power dissipation depends on package type, ambient temperature and heat sinking. See the characteristic curves for more details. Note 3: A heat sink is required to keep the junction temperature below the absolute maximum when the output is short circuited. Note 4: Force the input to a 12V and the output to a 10V and measure the output current. Repeat with b12 VIN and b10V on the output. Note 5: VOS is measured at VS a e a 4.5V, VSb e b4.5V and VS a e a 18V, VSb e 18V. Both supplies are changed simultaneously. Note 6: Slew rate is measured between VOUT e a 5V and b5V. 3 TD is 3.5in Test Conditions EL2002C Low Power, 180 MHz Buffer Amplifier Typical Performance Curves Offset Voltage vs Temperature Voltage Gain vs Temperature Output Voltage Swing vs Temperature Supply Current vs Supply Voltage Voltage Gain vs Input Voltage Voltage Gain vs Source Resistance Input Bias Current vs Input Voltage at Various Temperatures Input Bias Current vs Input Voltage g Slew Rate vs Supply Voltage 2002 – 4 4 EL2002C Low Power, 180 MHz Buffer Amplifier Typical Performance Curves Ð Contd. Slew Rate vs Load Capacitance Voltage Gain vs Frequency for Various Resistive Loads Voltage Gain vs Frequency for Various Capacitive Loads; RL e 100X Voltage Gain vs Frequency for Various Capacitive Loads; RL e % Phase Shift vs Frequency for Various Capacitive Loads b 3 dB Bandwidth vs Supply Voltage Power Supply Rejection Ratio vs Frequency Output Impedance vs Frequency Reverse Isolation vs Frequency 2002 – 5 5 EL2002C Low Power, 180 MHz Buffer Amplifier Typical Performance Curves Ð Contd. Small Signal Output Resistance vs Output Current 8-Lead Plastic DIP Maximum Power Dissipation vs Ambient Temperature 20-Lead SOL Maximum Power Dissipation vs Ambient Temperature Short Circuit Current vs Temperature 2002 – 6 Large Signal Response Small Signal Response OUTPUT RL e 100X CL e 10 pF f e 20 MHz OUTPUT RL e % CL e 220 pF f e 5 MHz 2002 – 9 2002 – 8 6 EL2002C Low Power, 180 MHz Buffer Amplifier Burn-In Circuit Power Supplies The EL2002 may be operated with single or split supplies with total voltage difference between 10V ( g 5V) and 36V ( g 18V). It is not necessary to use equal split value supplies. For example b 5V and a 12V would be excellent for signals from b 2V to a 9V. Bypass capacitors from each supply pin to ground are highly recommended to reduce supply ringing and the interference it can cause. At a minimum, 1 mF tantalum capacitor with short leads should be used for both supplies. 2002 – 10 Simplified Schematic Input Characteristics The input to the EL2002 looks like a resistance in parallel with about 3.5 pF in addition to a DC bias current. The DC bias current is due to the miss-match in beta and collector current between the NPN and PNP transistors connected to the input pin. The bias current can be either positive or negative. The change in input current with input voltage (RIN) is affected by the output load, beta and the internal boost. RIN can actually appear negative over portions of the input range; typical input current curves are shown in the characteristic curves. Internal clamp diodes from the input to the output are provided. These diodes protect the transistor base emitter junctions and limit the boost current during slew to avoid saturation of internal transistors. The diodes begin conduction at about g 2.5V input to output differential. When that happens the input resistance drops dramatically. The diodes are rated at 50 mA. When conducting they have a series resistance of about 20X. There is also 100X in series with the input that limits input current. Above g 7.5V differential input to output, additional series resistance should be added. 2002 – 11 Application Information The EL2002 is a monolithic buffer amplifier built on Elantec’s proprietary Complementary Bipolar process that produces NPN and PNP transistors with essentially identical DC and AC characteristics. The EL2002 takes full advantage of the complementary process with a unique circuit topology. Source Impedance The EL2002 has good input to output isolation. When the buffer is not used in a feedback loop, capacitive and resisitive sources up to 1 MHz present no oscillation problems. Care must be used in board layout to minimize output to input coupling. CAUTION: When using high source impedances (RS l 100 kX), significant gain errors can be observed due to output offset, load resistor, and the action of the boost circuit. See typical performance curves. Elantec has applied for two patents based on the EL2002’s topology. The patents relate to the base drive and feedback mechanism in the buffer. This feedback makes 2000 V/ms slew rates with 100X loads possible with very low supply current. 7 EL2002C TAB WIDE Low Power, 180 MHz Buffer Amplifier EL2002 Macromodel TD is 3.9in a input * Connections: a Vsupply * l b Vsupply * l l output * l l l * l l l l .subckt M2002 2 1 4 7 * Input Stage e1 10 0 2 0 1.0 r1 10 0 1K rh 10 11 150 ch 11 0 2pF rc 11 12 100 cc 12 0 3pF e2 13 0 12 0 1.0 * Output Stage q1 4 13 14 qp q2 1 13 15 qn q3 1 14 16 qn q4 4 15 19 qp r2 16 7 1 r3 19 7 1 i1 1 14 2mA i2 15 4 2mA * Bias Current iin a 2 0 3uA * Models .model qn npn(is e 5eb15 bf e 150 rb e 200 ptf e 45 tf e 0.1nS) .model qp pnp(is e 5eb15 bf e 150 rb e 200 ptf e 45 tf e 0.1nS) .ends 8 EL2002C Low Power, 180 MHz Buffer Amplifier EL2002 Macromodel Ð Contd. 2002 – 12 9 10 BLANK 11 BLANK EL2002C EL2002C Low Power, 180 MHz Buffer Amplifier General Disclaimer Specifications contained in this data sheet are in effect as of the publication date shown. Elantec, Inc. reserves the right to make changes in the circuitry or specifications contained herein at any time without notice. Elantec, Inc. assumes no responsibility for the use of any circuits described herein and makes no representations that they are free from patent infringement. December 1995 Rev D WARNING Ð Life Support Policy Elantec, Inc. products are not authorized for and should not be used within Life Support Systems without the specific written consent of Elantec, Inc. Life Support systems are equipment intended to support or sustain life and whose failure to perform when properly used in accordance with instructions provided can be reasonably expected to result in significant personal injury or death. Users contemplating application of Elantec, Inc. products in Life Support Systems are requested to contact Elantec, Inc. factory headquarters to establish suitable terms & conditions for these applications. Elantec, Inc.’s warranty is limited to replacement of defective components and does not cover injury to persons or property or other consequential damages. Elantec, Inc. 1996 Tarob Court Milpitas, CA 95035 Telephone: (408) 945-1323 (800) 333-6314 Fax: (408) 945-9305 European Office: 44-71-482-4596 12 Printed in U.S.A.