LL5711 and LL6263 Schottky Diodes Features MiniMELF (SOD-80C) Cathode Band .063 (1.6) Dia. .051 (1.3) .019 (0.48) .011 (0.28) .146 (3.7) .130 (3.3) • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. • This diode is also available in the DO-35 case with type designation 1N5711 and 1N6263. Mechanical Data Case: MiniMELF Glass Case (SOD-80C) Weight: approx. 0.05g Cathode Band Color: Green Packaging Codes/Options: D1/10K per 13” reel (8mm tape), 20K/box D2/2.5K per 7” reel (8mm tape), 20K/box Dimensions in inches and (millimeters) Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified. Parameter Symbol Value Unit VRRM 70 60 V Power Dissipation (Infinite Heatsink) Ptot 400(1) mW Maximum Single Cycle Surge 10µs Square Wave IFSM 2.0 A Junction Temperature Tj 125 °C Storage Temperature Range TS –55 to +150 °C LL5711 LL6263 Peak Inverse Voltage Electrical Characteristics (T = 25°C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit V(BR)R IR = 10µA 70 60 — — — — V Leakage Current IR VR = 50V — — 200 nA Forward Voltage Drop VF IF = 1.0mA IF = 15mA — — — — 0.41 1.0 V Junction Capacitance Ctot VR = 0V, f = 1MHz — — 2.2 pF trr IF = IR = 5mA, recover to 0.1IR — — 1 ns J Reverse Breakdown Voltage Reverse Recovery Time LL5711 LL6263 Note: (1) Valid provided that electrodes are kept at ambient temperature. 10/6/00 LL5711 and LL6263 Schottky Diodes Ratings and Characteristic Curves (T A = 25°C unless otherwise noted)