FREESCALE MRF5S21100HSR3

MRF5S21100H
Rev. 2, 1/2005
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
MRF5S21100HR3
MRF5S21100HSR3
Designed for W- CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
• Typical 2 - carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1050 mA,
Pout = 23 Watts Avg., Full Frequency Band, Channel Bandwidth =
3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 13.5 dB
Drain Efficiency — 26%
IM3 @ 10 MHz Offset — - 37 dBc @ 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — - 40 dBc @ 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 100 Watts CW
Output Power
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched, Controlled Q, for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40µ″ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
2170 MHz, 23 W AVG., 28 V
2 x W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF5S21100HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF5S21100HSR3
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain- Source Voltage
Rating
VDSS
- 0.5, +65
Vdc
Gate- Source Voltage
VGS
- 0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
273
1.56
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value (1,2)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 100 W CW
Case Temperature 78°C, 23 W CW
°C/W
RθJC
0.57
0.64
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
 Freescale Semiconductor, Inc., 2005. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF5S21100HR3 MRF5S21100HSR3
1
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M3 (Minimum)
Charge Device Model
C7 (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
µAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
µAdc
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
0.5
µAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 250 µAdc)
VGS(th)
2.5
2.8
3.5
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 1050 mAdc)
VGS(Q)
—
3.8
—
Vdc
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 2.5 Adc)
VDS(on)
—
0.24
0.3
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 2.5 Adc)
gfs
—
6
—
S
Crss
—
2.14
—
pF
Characteristic
Off Characteristics
On Characteristics (DC)
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1050 mA, Pout = 23 W Avg., f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in
3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. Peak/Avg. = 8.5 dB @ 0.01%
Probability on CCDF.
Power Gain
Gps
12.5
13.5
—
dB
Drain Efficiency
ηD
24
26
—
%
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
IM3
—
- 37
- 35
dBc
ACPR
—
- 40
- 38
dBc
IRL
—
- 16
-9
dB
1. Part is internally matched both on input and output.
MRF5S21100HR3 MRF5S21100HSR3
2
RF Device Data
Freescale Semiconductor
R4
B1
R1
VBIAS
+
C12
R2
C5
Z8
Z7
RF
INPUT
Z2
C13
Z3
Z4
VSUPPLY
+
C11
C8
C3
R3
Z1
C7
W1
C10
C9
C4
C6
Z5
Z16
Z10 Z11 Z12 Z13 Z14
Z9
Z6
Z15
C2
Z17
RF
OUTPUT
C15
C14 C1
DUT
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
0.674″ x 0.080″ Microstrip
0.421″ x 0.080″ Microstrip
0.140″ x 0.080″ Microstrip
1.031″ x 0.080″ Microstrip
0.380″ x 0.643″ Microstrip
0.080″ x 0.643″ Microstrip
0.927″ x 0.048″ Microstrip
0.620″ x 0.048″ Microstrip
0.079″ x 1.136″ Microstrip
Z10
Z11
Z12
Z13
Z14
Z15
Z16
Z17
PCB
0.368″ x 1.136″ Microstrip
0.151″ x 0.393″ Microstrip
0.280″ x 0.220″ Microstrip
0.481″ x 0.142″ Microstrip
0.138″ x 0.080″ Microstrip
0.344″ x 0.080″ Microstrip
0.147″ x 0.099″ Microstrip
0.859″ x 0.080″ Microstrip
Arlon GX - 0300- SS - 22, 0.030″, εr = 2.55
Figure 1. MRF5S21100HR3(SR3) Test Circuit Schematic
Table 5. MRF5S21100HR3(SR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
Short RF Bead
95F786
Newark
C1, C2
8.2 pF Chip Capacitors
100B8R2CP500X
ATC
C3
5.6 pF Chip Capacitor
100B5R6CP500X
ATC
C4
0.1 µF Chip Capacitor
C1210C104J5RAC
Kemet
C5, C7
7.5 pF Chip Capacitors
100B7R5JP500X
ATC
C6
1.2 pF Chip Capacitor
100B1R2BP500X
ATC
C8
1K pF Chip Capacitor
100B102JP500X
ATC
C9, C10
0.56 µF Chip Capacitors
C1825C564J5RAC
Kemet
C11
470 µF, 63 V Electrolytic Capacitor
95F4579
Newark
C12
100 µF, 50 V Electrolytic Capacitor
51F2913
Newark
C13
0.6- 4.5 pF Gigatrim Variable Capacitor
44F3358
Newark
C14
2.7 pF Chip Capacitor
100B2R7CP500X
ATC
C15
0.4- 2.5 pF Gigatrim Variable Capacitor
44F3367
Newark
R1
1 kW Chip Resistor
D5534M07B1K00R
Newark
R2
560 kW Chip Resistor
CR1206564JT
Newark
R3, R4
12 W Chip Resistors
RM73B2B120JT
Garrett Electronics
MRF5S21100HR3 MRF5S21100HSR3
RF Device Data
Freescale Semiconductor
3
C12
C5 C6
R1
B1
R2
R3
R4
C3
C10
C4
C2
CUT OUT AREA
C14
VDD
W1
C7 C8
C1
C13
C11
C9
VGG
C15
MRF5S21100L
Rev 03
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MRF5S21100HR3(SR3) Test Circuit Component Layout
MRF5S21100HR3 MRF5S21100HSR3
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
15
G ps , POWER GAIN (dB)
30
ηD
12
11
10
IRL
9
8
25
VDD = 28 Vdc, Pout = 23 W (Avg.), IDQ = 1050 mA
2−Carrier W−CDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth
Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF)
20
−20
−25
−30
IM3
7
−35
6
−40
ACPR
5
−45
2040 2060 2080 2100 2120 2140 2160 2180 2200 2220 2240
0
−10
−20
−30
−40
−50
IRL, INPUT RETURN LOSS (dB)
35
Gps
13
IM3 (dBc), ACPR (dBc)
14
ηD, DRAIN
EFFICIENCY (%)
40
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier W - CDMA Broadband Performance
−15
G ps , POWER GAIN (dB)
15
IDQ = 1400 mA
1250 mA
14
1050 mA
850 mA
13
650 mA
12
VDD = 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurement, 10 MHz Tone Spacing
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
16
10
−25
−30
IDQ = 1400 mA
−35
−40
1250 mA
−45
850 mA
−50
−55
10
1
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation Distortion
versus Output Power
56
−25
55
Pout , OUTPUT POWER (dBm)
IMD, INTERMODULATION DISTORTION (dBc)
−20
3rd Order
−35
−40
5th Order
−45
7th Order
−50
−55
VDD = 28 Vdc, Pout = 100 W (PEP), IDQ = 1050 mA
Two−Tone Measurements, Center Frequency = 2140 MHz
−60
Ideal
P3dB = 51.88 dBm (154.17 W)
54
53
P1dB = 51.18 dBm (131.22 W)
52
Actual
51
50
VDD = 28 Vdc, IDQ = 1050 mA
Pulsed CW, 8µsec(on), 1msec(off)
Center Frequency = 2140 MHz
49
48
0.1
1
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Two - Tone Power Gain versus
Output Power
−30
1050 mA
650 mA
11
1
VDD = 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurement, 10 MHz Tone Spacing
−20
10
34
35
36
37
38
39
40
41
TWO−TONE SPACING (MHz)
Pin, INPUT POWER (dBm)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
Figure 7. Pulse CW Output Power versus
Input Power
42
MRF5S21100HR3 MRF5S21100HSR3
RF Device Data
Freescale Semiconductor
5
40
109
35
30
ηD
−20
−25
IM3
25
−30
20
−35
Gps
15
−40
10
−45
ACPR
5
−50
0
MTTF FACTOR (HOURS x AMPS2)
−15
VDD = 28 Vdc, IDQ = 1050 mA
f1 = 2135 MHz, f2 = 2145 MHz
2x W−CDMA, 10 MHz @ 3.84 MHz Channel Bandwidth
Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF)
IM3 (dBc), ACPR (dBc)
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
TYPICAL CHARACTERISTICS
107
106
100
−55
10
1
108
120
140
160
180
200
220
TJ, JUNCTION TEMPERATURE (_C)
Pout, OUTPUT POWER (WATTS) AVG. W−CDMA
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
Figure 8. 2 - Carrier W - CDMA ACPR, IM3, Power
Gain and Drain Efficiency versus Output Power
Figure 9. MTTF Factor versus Junction Temperature
TYPICAL CHARACTERISTICS
W - CDMA TEST SIGNAL
−20
100
3.84 MHz
Channel BW
−30
−40
−50
1
−60
(dB)
PROBABILITY (%)
10
0.1
−70
−80
0.01
−90
−110
−ACPR @
+ACPR @
3.84 MHz BW 3.84 MHz BW
−IM3 @
3.84 MHz BW
−120
−25
−20
−100
0.001
0.0001
0
2
4
6
8
10
PEAK−TO−AVERAGE (dB)
Figure 10. CCDF W - CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single Carrier Test Signal
−15
−10
−5
0
5
10
+IM3 @
3.84 MHz BW
15
20
25
f, FREQUENCY (MHz)
Figure 11. 2-Carrier W-CDMA Spectrum
MRF5S21100HR3 MRF5S21100HSR3
6
RF Device Data
Freescale Semiconductor
Zo = 10 Ω
Zload
f = 2200 MHz
f = 2100 MHz
Zsource
f = 2200 MHz
f = 2100 MHz
VDD = 28 Vdc, IDQ = 1050 mA, Pout = 23 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
2100
3.4 - j7.2
1.2 - j2.1
2120
3.4 - j6.5
1.4 - j2.3
2160
4.9 - j7.0
2.2 - j3.0
2200
3.4 - j8.6
1.7 - j2.1
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 12. Series Equivalent Source and Load Impedance
MRF5S21100HR3 MRF5S21100HSR3
RF Device Data
Freescale Semiconductor
7
NOTES
MRF5S21100HR3 MRF5S21100HSR3
8
RF Device Data
Freescale Semiconductor
NOTES
MRF5S21100HR3 MRF5S21100HSR3
RF Device Data
Freescale Semiconductor
9
NOTES
MRF5S21100HR3 MRF5S21100HSR3
10
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
B
G
Q
bbb
2X
1
M
T A
M
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
M
3
B
K
2
(FLANGE)
D
bbb
T A
M
B
M
M
M
bbb
N
R
(INSULATOR)
M
T A
B
M
M
ccc
M
T A
M
M
aaa
M
T A
M
ccc
B
S
(LID)
M
T A
B
M
(LID)
M
(INSULATOR)
B
M
H
C
F
E
T
A
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4X Z
(LID)
B
1
K
2X
2
(FLANGE)
D
bbb
M
T A
M
B
M
N
(LID)
ccc
M
R
M
T A
M
B
M
ccc
M
T A
M
T A
M
S
(INSULATOR)
bbb
M
B
M
aaa
M
T A
M
(LID)
B
M
(INSULATOR)
B
M
H
C
3
F
E
A
T
A
(FLANGE)
MILLIMETERS
MIN
MAX
33.91
34.16
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
27.94 BSC
1.45
1.70
4.32
5.33
19.66
19.96
19.60
20.00
3.00
3.51
9.27
9.53
9.27
9.52
0.127 REF
0.254 REF
0.381 REF
CASE 465 - 06
ISSUE F
NI - 780
MRF5S21100HR3
4X U
(FLANGE)
B
INCHES
MIN
MAX
1.335
1.345
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
1.100 BSC
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
.118
.138
0.365
0.375
0.365
0.375
0.005 REF
0.010 REF
0.015 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
SEATING
PLANE
(FLANGE)
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
DIM
A
B
C
D
E
F
H
K
M
N
R
S
U
Z
aaa
bbb
ccc
INCHES
MIN
MAX
0.805
0.815
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
0.365
0.375
0.365
0.375
−−−
0.040
−−−
0.030
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
20.45
20.70
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
1.45
1.70
4.32
5.33
19.61
20.02
19.61
20.02
9.27
9.53
9.27
9.52
−−−
1.02
−−−
0.76
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
SEATING
PLANE
CASE 465A - 06
ISSUE F
NI - 780S
MRF5S21100HSR3
MRF5S21100HR3 MRF5S21100HSR3
RF Device Data
Freescale Semiconductor
11
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 Freescale Semiconductor, Inc. 2005. All rights reserved.
MRF5S21100HR3 MRF5S21100HSR3
Document Number: MRF5S21100H
Rev. 2, 1/2005
12
RF Device Data
Freescale Semiconductor