PD- 94016
IRF5803D2
TM
FETKY MOSFET & Schottky Diode
l
l
l
l
l
Co-packaged HEXFET Power
MOSFET and Schottky Diode
Ideal For Buck Regulator Applications
P-Channel HEXFET
Low VF Schottky Rectifier
SO-8 Footprint
1
8
K
A
2
7
K
S
3
6
D
G
4
5
D
A
VDSS = -40V
RDS(on) = 112mΩ
Schottky Vf = 0.51V
T op V ie w
Description
The FETKYTM family of Co-packaged HEXFETs and
Schottky diodes offer the designer an innovative board
space saving solution for switching regulator and
power management applications. HEXFETs utilize
advanced processing techniques to achieve extremely
low on-resistance per silicon area. Combining this
technology with International Rectifier's low forward
drop Schottky rectifiers results in an extremely efficient
device suitable for use in a wide variety of portable
electronics applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics. The
SO-8 package is designed for vapor phase, infrared or
wave soldering techniques.
SO-8
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Parameter
Maximum
Units
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current ➀
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
-3.4
-2.7
-27
2.0
1.3
16
± 20
-55 to +150
A
W
mW/°C
V
°C
Thermal Resistance
Symbol
RθJL
RθJA
RθJA
Parameter
Junction-to-Drain Lead, MOSFET
Junction-to-Ambient , MOSFET
Junction-to-Ambient , SCHOTTKY
Typ.
Max.
Units
–––
–––
–––
20
62.5
62.5
°C/W
Notes:
Repetitive rating – pulse width limited by max. junction temperature (see fig. 11)
Pulse width ≤ 400µs – duty cycle ≤ 2%
Surface mounted on 1 inch square copper board, t ≤ 10sec.
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03/05/01
IRF5803D2
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-40
–––
–––
–––
-1.0
4.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
-0.03
–––
–––
–––
–––
–––
–––
–––
–––
25
4.5
3.5
43
550
88
50
1110
93
73
Max. Units
Conditions
–––
V
VGS = 0V, ID = -250µA
––– V/°C Reference to 25°C, I D = -1mA
112
VGS = -10V, ID = -3.4A
mΩ
190
VGS = -4.5V, ID = -2.7A
-3.0
V
VDS = VGS, ID = -250µA
–––
S
VDS = -10V, ID = -3.4A
-10
VDS = -32V, VGS = 0V
µA
-25
VDS = -32V, VGS = 0V, TJ = 70°C
-100
VGS = -20V
nA
100
VGS = 20V
37
ID = -3.4A
6.8
nC
VDS = -20V
5.3
VGS = -10V, See Fig. 6 & 14
65
VDD = -20V
825
ID = -1.0A
ns
130
RG = 6.0Ω
75
VGS = -10V,
–––
VGS = 0V
–––
pF
VDS = -25V
–––
ƒ = 100kHz, See Fig. 5
MOSFET Source-Drain Ratings and Characteristics
IS
I SM
VSD
trr
Qrr
Parameter
Min.
Continuous Source Current(Body Diode) –––
Pulsed Source Current (Body Diode)
–––
Body Diode Forward Voltage
–––
Reverse Recovery Time (Body Diode)
–––
Reverse Recovery Charge
–––
Typ. Max. Units
Conditions
––– -2.0
A
––– -27
––– -1.2
V
TJ = 25°C, IS = -2.0A, VGS = 0V
27
40
ns
TJ = 25°C, IF = -2.0A
34
50
nC
di/dt = 100A/µs
Schottky Diode Maximum Ratings
If (av)
ISM
Parameter
Max. Average Forward Current
Max. peak one cycle Non-repetitive
Surge current
Max. Units
3.0
A
340
70
A
Conditions
50% Duty Cycle. Rectangular Waveform, TA =30°C
See Fig.21
5µs sine or 3µs Rect. pulse
Following any rated
10ms sine or 6ms Rect. pulse load condition &
with Vrrm applied
Schottky Diode Electrical Specifications
Vfm
Parameter
Max. Forward Voltage Drop
Vrrm
Irm
Max. Working Peak Reverse Voltage
Max. Reverse Leakage Current
Ct
Max. Junction Capacitance
2
Max. Units
0.51
0.63
V
0.44
0.59
40
V
3.0 mA
37
405
pF
Conditions
If = 5.0A, Tj = 25°C
If = 10A, Tj = 25°C
If = 5.0A, Tj = 125°C
If = 10A, Tj = 125°C
Vr = 40V
Tj = 25°C
Tj = 125°C
Vr = 5Vdc ( 100kHz to 1 MHz) 25°C
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IRF5803D2
Power Mosfet Characteristics
100
VGS
TOP
-15V
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
BOTTOM - 2.7V
10
1
0.1
20µs PULSE WIDTH
Tj = 25°C
VGS
-15V
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
BOTTOM - 2.7V
TOP
-ID, Drain-to-Source Current (A)
-ID, Drain-to-Source Current (A)
100
10
1
-2.7V
0.1
20µs PULSE WIDTH
Tj = 125°C
-2.7V
0.01
0.01
0.1
1
10
0.1
100
Fig 1. Typical Output Characteristics
TJ = 25 ° C
TJ = 150 ° C
1
V DS = -25V
20µs PULSE WIDTH
3.0
4.0
5.0
6.0
7.0
Fig 3. Typical Transfer Characteristics
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8.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-I D , Drain-to-Source Current (A)
2.0
-VGS , Gate-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
100
0.1
2.0
10
-VDS, Drain-to-Source Voltage (V)
-VDS, Drain-to-Source Voltage (V)
10
1
ID = -3.4A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF5803D2
Power Mosfet Characteristics
12
VGS = 0V,
f = 100 KHZ
C iss
= Cgs + Cgd ,
SHORTED
Crss = Cgd
Coss = Cds + Cgd
1500
C, Capacitance(pF)
Cds
-VGS , Gate-to-Source Voltage (V)
2000
Ciss
1000
500
Coss
ID = -3.4A
V DS=-32V
V DS=-20V
10
8
6
4
2
Crss
0
0
1
10
0
100
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
15
20
25
30
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
-ID, Drain-to-Source Current (A)
-ISD , Reverse Drain Current (A)
10
QG , Total Gate Charge (nC)
- V , Drain-to-Source Voltage (V)
DS
TJ = 150 ° C
10
TJ = 25 ° C
1
0.1
0.4
V GS = 0 V
0.8
1.2
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
5
1.6
OPERATION IN THIS AREA
LIMITED BY RDS(on)
10
100µsec
1
1msec
TA = 25°C
TJ = 150°C
Single Pulse
10msec
0.1
1
10
100
-VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF5803D2
Power Mosfet Characteristics
3.5
RD
VDS
-ID , Drain Current (A)
3.0
VGS
D.U.T.
RG
2.5
+
2.0
V DD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
1.5
1.0
Fig 10a. Switching Time Test Circuit
0.5
td(on)
tr
t d(off)
tf
VGS
0.0
25
50
75
100
125
10%
150
TC , Case Temperature ( ° C)
90%
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
0.01
1
PDM
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF5803D2
RDS ( on ) , Drain-to-Source On Resistance (Ω )
(
RDS(on), Drain-to -Source On Resistance Ω)
Power Mosfet Characteristics
0.20
0.15
0.10
ID = -3.4A
0.05
0.00
4.0
8.0
12.0
16.0
0.40
VGS = -4.5V
0.30
0.20
VGS = -10V
0.10
0.00
0.0
5.0
-VGS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance Vs.
Gate Voltage
10.0
15.0
-ID , Drain Current ( A )
Fig 13. Typical On-Resistance Vs.
Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
QG
QGS
.2µF
.3µF
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 14a. Basic Gate Charge Waveform
6
12V
IG
ID
Current Sampling Resistors
Fig 14b. Gate Charge Test Circuit
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IRF5803D2
Power Mosfet Characteristics
30
2.8
25
20
Power (W)
-VGS(th) ( V )
ID = -250µA
2.4
15
10
2.0
5
0
1.6
-75
-50
-25
0
25
50
75
100
TJ , Temperature ( °C )
Fig 15. Typical Vgs(th) Vs.
Junction Temperature
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125
150
0.001
0.010
0.100
1.000
10.000
100.000
Time (sec)
Fig 16. Typical Power Vs. Time
7
IRF5803D2
Schottky Diode Characteristics
100
1 00
Re ve rse C urren t - I R (m A )
125 °C
10
1 00°C
1
75°C
0 .1
50 °C
0.01
25°C
T J = 15 0°C
0 .0 0 1
T J = 12 5°C
0
5
T J = 2 5°C
10
10
15
20
25
30
35
40
Reverse V oltag e - V R (V )
Fig. 18 - Typical Values of
Reverse Current Vs. Reverse Voltage
1000
1
0
0 .2 0 . 4 0 .6 0 .8
1
1 .2 1 .4 1. 6 1 .8
2
2 .2
Fo rw ard V o lta g e D ro p - V F M (V )
Jun ction C apacitance - C T (pF)
In sta n ta n e o u s F orw a rd C u rre n t - I F (A )
T J = 15 0°C
T J = 25°C
10 0
Fig. 17 - Maximum Forward Voltage Drop
Characteristics
0
5
10
15
20
25
30
35
40
45
Reverse V oltage - V R (V )
Fig. 19 - Typical Junction Capacitance
Vs. Reverse Voltage
8
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IRF5803D2
Schottky Diode Characteristics
100
Thermal Response (Z thJA )
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
PDM
t1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.01
0.00001
t2
Notes:
1. Duty factor D =t 1 / t 2
2. Peak TJ = P DM x ZthJA + TA
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 20. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Allowable Ambient Temprature - (°C)
180
160
RthJA = 62.5 °C/W
140
120
DC
100
80
60
see note (4)
40
Square wave ( D = 0.50)
20
80 % Rated V
R applied
0
0
1
2
3
4
5
6
Average Forward Current - F(AV)
I
(A)
Fig.21 - Maximum Allowable Ambient
Temp. Vs. Forward Current
Note (4) Formula used: TC = TJ - (Pd + PdREV) x RthJA ;
Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) ;
PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR
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IRF5803D2
SO-8 Package Details
D
5
A
8
6
7
6
5
H
0.25 [.010]
1
2
3
A
4
MAX
MIN
.0532
.0688
1.35
1.75
A1 .0040
.0098
0.10
0.25
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BAS IC
1.27 BAS IC
e1
6X
e
e1
C
.025 BAS IC
0.635 BAS IC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
y
0.10 [.004]
0.25 [.010]
MAX
K x 45°
A
8X b
MILLIMET ERS
MIN
A
E
INCHES
DIM
B
A1
8X L
8X c
7
C A B
F OOTPRINT
NOT ES:
1. DIMENSIONING & T OLERANCING PER AS ME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENSION: MILLIMET ER
3. DIMENSIONS ARE SHOWN IN MILLIMET ERS [INCHES ].
4. OUT LINE CONFORMS T O JEDEC OUT LINE MS-012AA.
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUS IONS .
MOLD PROTRUS IONS NOT T O EXCEED 0.15 [.006].
6 DIMENSION DOES NOT INCLUDE MOLD PROTRUS IONS .
MOLD PROTRUS IONS NOT T O EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENSION IS THE LENGTH OF LEAD F OR S OLDERING T O
A S UBST RATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: T HIS IS AN IRF7101 (MOS FET )
INTERNAT IONAL
RECTIFIER
LOGO
10
YWW
XXXX
F7101
DATE CODE (YWW)
Y = LAS T DIGIT OF THE YEAR
WW = WEEK
LOT CODE
PART NUMBER
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IRF5803D2
SO-8 Tape and Reel
T E R M IN A L N U M B E R 1
1 2 .3 ( .4 8 4 )
1 1 .7 ( .4 6 1 )
8 .1 ( .3 1 8 )
7 .9 ( .3 1 2 )
F E E D D IR E C T IO N
N O TES:
1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ).
3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 .
3 3 0 .0 0
(1 2 .9 9 2 )
MAX.
1 4 .4 0 ( .5 66 )
1 2 .4 0 ( .4 88 )
N O TE S :
1. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
2. O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 .
Data and specifications subject to change without notice.
This product has been designed and qualified for the consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.03/01
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11