IRF IRF5804

PD - 94333
IRF5804
HEXFET® Power MOSFET
l
l
l
l
l
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Low Gate Charge
VDSS
Ω)
RDS(on) max (mΩ)
ID
-40V
198@VGS = -10V
334@VGS = -4.5V
-2.5A
-2.0A
Description
These P-channel HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance
per silicon area. This benefit provides the designer
with an extremely efficient device for use in battery and
load management applications.
A
D
1
6
D
2
5
D
G
3
4
S
D
The TSOP-6 package with its customized leadframe
produces a HEXFET® power MOSFET with RDS(on)
60% less than a similar size SOT-23. This package is
ideal for applications where printed circuit board space
is at a premium. It's unique thermal design and RDS(on)
reduction enables a current-handling increase of nearly
300% compared to the SOT-23.
TSOP-6
T op V iew
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Drain- Source Voltage
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current 
Power Dissipation ƒ
Power Dissipation ƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
-40
-2.5
-2.0
-10
2.0
1.3
0.016
± 20
-55 to + 150
V
mW/°C
V
°C
Max.
Units
62.5
°C/W
A
W
Thermal Resistance
Parameter
RθJA
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Maximum Junction-to-Ambientƒ
1
10/04/01
IRF5804
FOR REVIEW ONLY
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-40
–––
–––
–––
-1.0
2.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.03
–––
–––
–––
–––
–––
–––
–––
–––
5.7
2.8
2.1
19
430
100
64
680
60
44
Max. Units
Conditions
–––
V
VGS = 0V, ID = -250µA
––– V/°C Reference to 25°C, ID = -1mA
198
VGS = -10V, ID = -2.5 ‚
mΩ
334
VGS = -4.5V, ID = -2.0A ‚
-3.0
V
VDS = VGS, ID = -250µA
–––
S
VDS = -10V, ID = -2.5A
-10
VDS = -32V, VGS = 0V
µA
-25
VDS = -32V, VGS = 0V, TJ = 70°C
-100
VGS = -20V
nA
100
VGS = 20V
8.5
ID = -2.5A
4.2
nC
VDS = -20V
3.2
VGS = -10V
–––
VDD = -20V ‚
–––
ID = -1.0A
ns
–––
RG = 6.0Ω
–––
VGS = -10V
–––
VGS = 0V
–––
pF
VDS = -25V
–––
ƒ = 1kHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
-2.5
–––
–––
-10
–––
–––
–––
–––
24
32
-1.2
36
49
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = -2.0A, VGS = 0V
TJ = 25°C, IF = -2.0A
di/dt = -100A/µs ‚
D
S
‚
Notes:
 Repetitive rating; pulse width limited by
ƒ Surface mounted on 1 in square Cu board
max. junction temperature.
‚ Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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FOR REVIEW ONLY
100
100
VGS
-10V
-7.0V
-5.0V
-4.5V
-4.0V
-3.7V
-3.5V
BOTTOM -3.0V
VGS
-10V
-7.0V
-5.0V
-4.5V
-4.0V
-3.7V
-3.5V
BOTTOM -3.0V
TOP
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
TOP
10
1
-3.0V
0.1
20µs PULSE WIDTH
Tj = 25°C
10
1
-3.0V
20µs PULSE WIDTH
Tj = 150°C
0.01
0.1
0.1
1
10
100
0.1
-V DS , Drain-to-Source Voltage (V)
R DS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
T J = 150°C
1.00
T J = 25°C
VDS = -25V
20µs PULSE WIDTH
3.0
3.5
4.0
4.5
-VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
10.00
0.10
1
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
-I D, Drain-to-Source Current (Α )
IRF5804
5.0
ID = -2.5A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
FOR REVIEW ONLY
10000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
C, Capacitance(pF)
Coss = Cds + Cgd
1000
Ciss
100
Coss
Crss
12
-VGS , Gate-to-Source Voltage (V)
IRF5804
10
10
-
VDS = 32V
VDS = 20V
10
8
6
4
2
0
100
2
4
6
8
10
QG , Total Gate Charge (nC)
-VDS, Drain-to-Source Voltage (V)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10
100
-I D , Drain-to-Source Current (A)
TJ = 150 ° C
-ISD , Reverse Drain Current (A)
0
1
1
TJ = 25 ° C
0.1
0.4
V GS = 0 V
0.6
0.7
0.9
1.1
1.2
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
ID = 2.5A
1.4
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
100µsec
1
1msec
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
1
10msec
10
100
1000
-V DS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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FOR REVIEW ONLY
IRF5804
2.5
VDS
VGS
-ID , Drain Current (A)
2.0
RD
D.U.T.
RG
+
VDD
1.5
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
1.0
Fig 10a. Switching Time Test Circuit
0.5
td(on)
tr
t d(off)
tf
VGS
0.0
25
50
75
100
125
10%
150
TC , Case Temperature ( °C)
90%
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
0.01
1
P DM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
0.1
0.00001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
FOR REVIEW ONLY
0.40
0.40
R DS (on) , Drain-to-Source On Resistance (Ω)
R DS(on) , Drain-to -Source On Resistance ( Ω )
IRF5804
0.35
0.30
0.25
0.20
ID = -2.5A
0.15
0.10
0.35
0.30
VGS = -4.5V
0.25
0.20
0.15
VGS = -10V
0.10
4.0
5.0
6.0
7.0
8.0
9.0
10.0
1
2
3
-V GS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance Vs.
Gate Voltage
4
5
6
7
8
9
-I D , Drain Current (A)
Fig 13. Typical On-Resistance Vs.
Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
QG
QGS
.2µF
.3µF
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 14a. Basic Gate Charge Waveform
6
12V
IG
ID
Current Sampling Resistors
Fig 14b. Gate Charge Test Circuit
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10
FOR REVIEW ONLY
70
60
50
2.5
ID = -250µA
Power (W)
VGS(th) Gate threshold Voltage (V)
3.0
IRF5804
40
30
2.0
20
10
1.5
0
-75
-50
-25
0
25
50
75
100
125
T J , Temperature ( °C )
Fig 15. Typical Threshold Voltage Vs.
Junction Temperature
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150
1.00
10.00
100.00
1000.00
Time (sec)
Fig 16. Typical Power Vs. Time
7
FOR REVIEW ONLY
IRF5804
TSOP-6 Package Outline
TSOP-6 Part Marking Information
W = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR
Y = YEAR
W = WEEK
PART NUMBER
T OP
PART NUMBER CODE REFERENCE:
A = SI3443DV
B = IRF5800
C = IRF5850
D = IRF5851
E = IRF5852
I = IRF5805
J = IRF5806
K = IRF5810
L = IRF5804
8
LOT
CODE
YEAR
Y
2001
2002
2003
2004
2005
1996
1997
1998
1999
2000
1
2
3
4
5
6
7
8
9
0
WORK
WEEK
W
01
02
03
04
A
B
C
D
24
25
26
X
Y
Z
W = (27-52) IF PRECEDED BY A LET TER
YEAR
Y
2001
2002
2003
2004
2005
1996
1997
1998
1999
2000
A
B
C
D
E
F
G
H
J
K
WORK
WEEK
W
27
28
29
30
A
B
C
D
50
51
X
Y
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FOR REVIEW ONLY
IRF5804
TSOP-6 Tape & Reel Information
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/01
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9