IRF IRF7604

PD - 9.1263E
IRF7604
HEXFET® Power MOSFET
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Generation V Technology
Ultra Low On-Resistance
P-Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
Fast Switching
A
D
1
8
S
2
7
D
S
3
6
D
G
4
5
D
S
VDSS = -20V
RDS(on) = 0.09Ω
T o p V ie w
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The new Micro8 package, with half the footprint area of the
standard SO-8, provides the smallest footprint available in
an SOIC outline. This makes the Micro8 an ideal device for
applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro8 will allow
it to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards.
M icro 8
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ, TSTG
Max.
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Units
-3.6
-2.9
-19
1.8
14
± 12
-5.0
-55 to + 150
A
W
mW/°C
V
V/ns
°C
Thermal Resistance
Parameter
RθJA
Maximum Junction-to-Ambient„
Typ.
Max.
Units
–––
70
°C/W
All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .
12/9/97
IRF7604
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V(BR)DSS
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-20
–––
–––
–––
-0.70
2.6
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
VGS = 0V, ID = -250µA
-0.022 ––– V/°C Reference to 25°C, ID = -1mA
––– 0.090
VGS = -4.5V, ID = -2.4A ƒ
Ω
––– 0.13
VGS = -2.7V, ID = -1.2A ƒ
––– –––
V
VDS = VGS, ID = -250µA
––– –––
S
VDS = -10V, ID = -1.2A
––– -1.0
VDS = -16V, VGS = 0V
µA
––– -25
VDS = -16V, VGS = 0V, TJ = 125°C
––– -100
VGS = -12V
nA
––– 100
VGS = 12V
13
20
ID = -2.4A
2.6 3.9
nC
VDS = -16V
5.6 9.0
VGS = -4.5V, See Fig. 6 and 9 ƒ
17 –––
VDD = -10V
53 –––
ID = -2.4A
ns
31 –––
RG = 6.0Ω
38 –––
RD = 4.0Ω, See Fig. 10 ƒ
590 –––
VGS = 0V
330 –––
pF
VDS = -15V
170 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
I SM
V SD
t rr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
-1.8
A
–––
–––
-19
–––
–––
–––
–––
41
38
-1.2
62
57
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = -2.4A, VGS = 0V ƒ
TJ = 25°C, IF = -2.4A
di/dt = 100A/µs ƒ
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ ISD ≤ -2.4A, di/dt ≤ -96A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
„ Surface mounted on FR-4 board, t ≤ 10sec.
D
G
S
IRF7604
100
100
VGS
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
VGS
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
TOP
10
-ID , D rain-to-S ource C urrent (A )
-I D , D rain-to-S ourc e C urrent (A )
TOP
1
0.1
-1 .5V
20µ s P U LS E W ID TH
TJ = 25°C
A
0.01
0.1
1
10
1
-1.5V
0.1
20µ s P U LS E W ID TH
TJ = 150°C
0.01
0.1
10
1
-VD S , D rain-to-S ource V oltage (V )
-V D S , D rain-to-S ource V oltage (V )
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
R D S (on ) , D rain-to-S ource O n R esistance
(N orm alized)
-I D , D rain-to -S o urc e C urre nt (A )
100
10
T J = 1 5 0 °C
1
T J = 2 5 °C
0.1
V D S = -1 0 V
2 0 µ s P U L S E W ID T H
0.01
1.5
2.5
3.5
A
10
4.5
-VG S , G a te -to -S o u rc e V o lta g e (V )
Fig 3. Typical Transfer Characteristics
A
I D = -2.4A
1.5
1.0
0.5
V G S = -4.5V
0.0
-60
-40
-20
0
20
40
60
80
100 120
T J , Junction T em perature (°C )
Fig 4. Normalized On-Resistance
Vs. Temperature
A
140 160
IRF7604
V GS
C iss
C rss
C oss
C , C apacitanc e (pF )
1000
=
=
=
=
10
0V ,
f = 1M H z
C gs + C gd , C ds S H O R TE D
C gd
C ds + C gd
-V G S , G ate-to-S ource V oltage (V )
1200
C is s
800
C os s
600
C rs s
400
200
0
10
8
6
4
2
FO R TE S T C IR C U IT
S E E FIG U R E 9
0
A
1
I D = -2.4A
V D S = -16V
0
100
4
-VD S , D rain-to-S ource V oltage (V )
12
16
A
20
Q G , Total G ate C harge (nC )
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
100
O P E R A TIO N IN TH IS A R E A LIM ITE D
B Y R D S (on)
-I D , D rain C urrent (A )
-I S D , R everse D rain C urrent (A )
8
10
T J = 150°C
T J = 25°C
1
V G S = 0V
0.1
0.4
0.6
0.8
1.0
-VS D , S ource-to-D rain V oltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
A
1.2
100µ s
10
1m s
10m s
1
0.1
T A = 25°C
T J = 150°C
S ingle P ulse
0.1
A
1
10
-V D S , D rain-to-S ource V oltage (V )
Fig 8. Maximum Safe Operating Area
100
IRF7604
VDS
QG
VGS
-4.5 V
QGS
QGD
D.U.T.
RG
+
VDD
VG
-4.5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Charge
Fig 9a. Basic Gate Charge Waveform
Fig 10a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
td(on)
50KΩ
12V
tr
t d(off)
tf
VGS
.2µF
.3µF
D.U.T.
10%
+VDS
VGS
90%
-3mA
VDS
IG
ID
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
PDM
0.01
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
100
IRF7604
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
ƒ
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
‚
-
-
„
+
**

• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
RG
VGS*
+
-
*
VDD
*
Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
D=
Period
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
[VDD]
Forward Drop
Inductor Curent
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 12. For P-Channel HEXFETS
[ ISD]
IRF7604
Package Outline
Micro8 Outline
Dimensions are shown in millimeters (inches)
L E A D A S S IG N M E N T S
IN C H E S
D IM
D
M IL LIM E TE R S
M IN
M AX
M IN
MAX
A
.0 36
.0 44
0 .9 1
1 .11
A1
.0 04
.0 08
0 .1 0
0 .20
B
.0 10
.0 14
0 .2 5
0 .36
C
.005
.0 07
0 .13
0.18
D
.116
.1 20
2 .95
3.05
e
.0 25 6 B A S IC
0 .6 5 B A S IC
e1
.0 12 8 B A S IC
0 .3 3 B A S IC
E
.1 16
.1 20
2.9 5
3 .0 5
H
.188
.1 98
4 .78
5 .03
e
L
.0 16
.0 26
0 .4 1
0 .6 6
6X
θ
0°
6°
3
-B-
D D D D
D1 D1 D2 D2
8 7 6 5
8 7 6 5
S IN G L E
DU AL
8 7 6 5
3
H
E
0.2 5 (.01 0)
-A-
M
A
M
1 2 3 4
1 2 3 4
S S S G
S1 G 1 S2 G 2
1 2 3 4
0°
6°
e1
R E C O M M E N D E D F O O T P R IN T
θ
1 .04
( .0 4 1 )
8X
A
-C -
0.10 (.00 4)
B
A1
8X
0.0 8 (.0 0 3)
M
C A S
L
8X
B S
0 .38
8X
( .0 15 )
C
8X
3 .2 0
( .1 2 6 )
4.24
5 .2 8
( .16 7 ) ( .2 08 )
NOTES:
1 D IM E N S IO N IN G A N D T O L E R A N C IN G P E R A N S I Y 1 4 .5 M -1 9 8 2 .
0.65 6X
( .02 56 )
2 C O N T R O L L IN G D IM E N S IO N : IN C H .
3 D IM E N S IO N S D O N O T IN C L U D E M O L D F L A S H .
Part Marking Information
Micro8
D A T E C O D E (YW W ) A
Y = LA S T D IG IT O F YE A R
W W = W EEK
E X AM PLE : TH IS IS A N IR F 7501
451
7501
PART NUMBER
TOP
IRF7604
Tape & Reel Information
Micro8
Dimensions are shown in millimeters (inches)
T ER M IN AL N U M B E R 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FE ED D IR EC T IO N
NOTES:
1 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 .
2 . C O N T R O L L IN G D IM E N SIO N : M IL L IM E T E R .
330.00
(12.992)
M AX.
14.40 ( .566 )
12.40 ( .488 )
N O TE S :
1. C O N T R O LLING D IM E N S IO N : M ILLIM E T E R .
2. O U T LINE C O N FO R M S TO E IA -481 & EIA -541.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
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IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
12/97