PD - 91479B
IRF6215
HEXFET® Power MOSFET
Advanced Process Technology
Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l P-Channel
l Fully Avalanche Rated
Description
l
D
l
VDSS = -150V
RDS(on) = 0.29Ω
G
ID = -13A
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
TO-220AB
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Max.
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
-13
-9.0
-44
110
0.71
± 20
310
-6.6
11
-5.0
-55 to + 175
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
Max.
Units
–––
0.50
–––
1.4
–––
62
°C/W
5/13/98
IRF6215
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
Min.
-150
–––
–––
–––
-2.0
3.6
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
–––
LS
Internal Source Inductance
–––
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
IGSS
Typ.
–––
-0.20
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
14
36
53
37
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
0.29
VGS = -10V, ID = -6.6A , TJ = 25°C
Ω
0.58
VGS = -10V, ID = -6.6A , TJ = 150°C
-4.0
V
VDS = VGS, ID = -250µA
–––
S
VDS = -50V, ID = -6.6A
-25
VDS = -150V, VGS = 0V
µA
-250
VDS = -120V, VGS = 0V, TJ = 150°C
100
VGS = 20V
nA
-100
VGS = -20V
66
ID = -6.6A
8.1
nC
VDS = -120V
35
VGS = -10V, See Fig. 6 and 13
–––
VDD = -75V
–––
ID = -6.6A
ns
–––
RG = 6.8Ω
–––
RD = 12Ω, See Fig. 10
D
Between lead,
4.5 –––
6mm (0.25in.)
nH
G
from package
7.5 –––
and center of die contact
S
860 –––
VGS = 0V
220 –––
pF
VDS = -25V
130 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Q rr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– -13
showing the
A
G
integral reverse
––– ––– -44
p-n junction diode.
S
––– ––– -1.6
V
TJ = 25°C, IS = -6.6A, VGS = 0V
––– 160 240
ns
TJ = 25°C, IF = -6.6A
––– 1.2 1.7
µC di/dt = -100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 14mH
RG = 25Ω, IAS = -6.6A. (See Figure 12)
ISD ≤ -6.6A, di/dt ≤ -620A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
IRF6215
100
100
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
TOP
-ID , D rain-to-S ource C urrent (A )
-ID , D rain-to-S ource C urrent (A )
TOP
10
20 µ s P U L S E W ID TH
TJc = 25 °C
A
-4 .5 V
1
1
10
10
-4 .5V
2 0µ s P U LS E W ID T H
TJ
C = 1 75 °C
1
100
1
10
-VD S , D rain-to-S ource V oltage (V )
-VD S , D rain-to-S ource V oltage (V )
Fig 1. Typical Output Characteristics,
Fig 2. Typical Output Characteristics,
2.5
R D S (on) , Drain-to-S ource O n Resistance
(N orm alized)
-I D , D rain-to-S ource C urrent (A)
100
TJ = 2 5 °C
T J = 1 7 5 °C
10
V D S = -5 0 V
2 0 µ s P U L S E W ID T H
1
4
5
6
7
8
9
-VG S , G a te -to -S o u rc e V o lta g e (V )
Fig 3. Typical Transfer Characteristics
A
100
10
A
I D = -11 A
2.0
1.5
1.0
0.5
VG S = -1 0V
0.0
-60
-40
-20
0
20
40
60
80
A
100 120 140 160 180
T J , Junction T em perature (°C )
Fig 4. Normalized On-Resistance
Vs. Temperature
IRF6215
V GS
C is s
C rs s
C o ss
C , Capacitance (pF)
1600
=
=
=
=
20
0V ,
f = 1M H z
C g s + C g d , Cd s S H O R T E D
C gd
C d s + C gd
-V G S , G ate-to-S ource V oltage (V )
2000
C iss
1200
C oss
800
C rss
400
0
10
16
12
8
4
FO R TE S T CIR C U IT
S E E FIG U R E 1 3
100
0
-VD S , D rain-to-S ourc e V oltage (V )
20
40
60
A
80
Q G , Total G ate C harge (nC )
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
100
O P E R A TIO N IN TH IS A R E A L IM ITE D
B Y R D S (o n)
10µ s
-I D , D rain C urrent (A)
-I S D , Reverse D rain Current (A )
V D S = -12 0V
V D S = -75 V
V D S = -30 V
0
A
1
I D = -6 .6 A
TJ = 17 5 °C
10
T J = 25 °C
1
100µ s
10
1m s
V G S = 0V
0.1
0.2
0.6
1.0
1.4
-VS D , S ourc e-to-D rain V oltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
A
1.8
T C = 25 °C
T J = 17 5°C
S ing le P u lse
1
1
10m s
10
100
-VD S , D rain-to-S ourc e V oltage (V )
Fig 8. Maximum Safe Operating Area
A
1000
IRF6215
15
RD
VDS
VGS
12
D.U.T.
-I D , Drain Current (A)
RG
+
VDD
9
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
6
Fig 10a. Switching Time Test Circuit
3
td(on)
tr
t d(off)
tf
VGS
10%
0
25
50
75
100
125
150
175
TC , Case Temperature ( ° C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
90%
VDS
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
0.1
0.01
0.00001
PDM
0.05
0.02
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1
IRF6215
D .U .T
RG
A
IA S
-2 0 V
tp
VD D
D R IV E R
0 .0 1Ω
15V
Fig 12a. Unclamped Inductive Test Circuit
IAS
E A S , S ingle Pulse Avalanc he E nergy (m J)
800
L
VDS
TOP
B O T TO M
ID
-2 .7A
-4 .7A
-6.6 A
600
400
200
0
A
25
50
75
100
125
150
S tarting T J , J unc tion T em perature (°C )
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
tp
V (BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
-10V
QGS
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 13a. Basic Gate Charge Waveform
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
175
IRF6215
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T*
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
RG
VGS
*
+
-
VDD
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
D=
Period
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
[VDD]
Forward Drop
Inductor Curent
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For P-Channel HEXFETS
[ ISD ]
IRF6215
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
2.87 (.11 3)
2.62 (.10 3)
10 .54 (.4 15)
10 .29 (.4 05)
3 .7 8 (.149 )
3 .5 4 (.139 )
-A -
-B 4.69 ( .18 5 )
4.20 ( .16 5 )
1 .32 (.05 2)
1 .22 (.04 8)
6.47 (.25 5)
6.10 (.24 0)
4
1 5.24 (.60 0)
1 4.84 (.58 4)
1.15 (.04 5)
M IN
1
2
1 4.09 (.55 5)
1 3.47 (.53 0)
4.06 (.16 0)
3.55 (.14 0)
3X
3X
L E A D A S S IG NM E NT S
1 - GATE
2 - D R A IN
3 - S O U RC E
4 - D R A IN
3
1 .4 0 (.0 55 )
1 .1 5 (.0 45 )
0.93 (.03 7)
0.69 (.02 7)
0 .3 6 (.01 4)
3X
M
B A M
2.54 (.10 0)
0.55 (.02 2)
0.46 (.01 8)
2 .92 (.11 5)
2 .64 (.10 4)
2X
N O TE S :
1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82.
2 C O N TR O L LIN G D IM E N S IO N : IN C H
3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 A B .
4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S .
Part Marking Information
TO-220AB
: IS
TH IS A
ISN AIR
N F1
IR0F1
E X AEMXPA LMEP :L ETH
1 00 1 0
W ITWH ITAHS SAESMS BE LMYB L Y
C EO D9EB 19MB 1 M
L O TL OCTO D
A
INRTE
N A TIO
IN TE
N ARTIO
N A LN A L
E C IE
TIFR IE R
R E CRTIF
IR F IR
10F110
0 10
L O GL O G O
9 2 4962 4 6
9B 9B1 M 1 M
A S SAESMS BE LMYB L Y
C EO D E
L O TL O TC O D
A
NB
U EMRB E R
P A RPTA RNTU M
D A TE
C EO D E
D A TE
COD
(Y Y(Y
W YWW) W )
Y Y Y=Y Y=E AYRE A R
W WW W
= W= EW
E KE E K
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http://www.irf.com/
Data and specifications subject to change without notice.
5/98