BetLux BL-L3522PD 5.1*3.0*7.4mm silicon photo diode Datasheet

SILICON PHOTO DIODES
BL-L3522PD
Features:
Ø
5.1*3.0*7.4mm SILICON PHOTO DIODES
Ø
Choice of various viewing angles.
Ø
Diffused and Water clear lens are available.
Ø
Ø
Ø
Ø
Ø
Ø
Ø
Fast response time.
High photo sensitivity.
Small junction capacitance.
The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAlAs IR
emitter.
Applications:
High speed photo detector
Camera
Infrared remote controller for TVs VCR, audio equipment, air conditioner, etc.
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Power Dissipation
Reverse Voltage
Operation Temperature
Storage Temperature
Pd
VR
TOPR
TSTG
Lead Soldering Temperature
TSOL
Rating
Unit
150
35
-40 to +80
-40 to +85
mW
V
°C
°C
Max.260±5°C for 3 sec Max.
(1.6mm from the base of the epoxy
bulb)
°C
Electronic Optical Characteristics at Ta=25°C
Items
Wavelength of Peak
Sensitivity
Open
Circuit
Voltage
Short
Circuit
Current
Reverse
Current
Light
Symbol
Min.
Typ.
Max.
Unit
Condition
¦ËP
-
940
-
nm
-
VOC
-
0.35
-
V
ISC
-
75
-
uA
H=5mW/cm2
¦ËP=940nm
IL
-
120
-
uA
ID
-
5
30
nA
Reverse
Dark
Current
Reverse
Break
down
Voltage
Viewing angle
VBR
35
170
-
V
2¦È1/2
-
35
-
Deg
Rise/Fall Time
Tr/Tf
-
50/50
-
nS
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H=5mW/cm2
¦ËP=940nm
VR=5V
H=0mW/cm2
VR=10V
H=0mW/cm2
IR=100uA
RL=1000¦¸
VR=10V
SILICON PHOTO DIODES
BL-L3522PD
Package configuration & Internal circuit diagram
Notes:
1. All dimensions are in millimeters (inches)
2. Tolerance is ±0.25(0.01")unless otherwise noted.
3. Specifications are subject to change without notice.
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SILICON PHOTO DIODES
BL-L3522PD
Typical electrical-optical characteristics curves:
(A)
1.0
(B )
(C)
( D)
(2)
(3)
(8)
( 4)
(1) (6)
( 5)
(9)
(10)
0.5
0
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
Wav elength(nm)
RELATIV E INTENS ITY Vs WA VELE NGT H(¦Ë p )
(1) - GaAsP/GaAs 655nm/Red
(9) - GaAlAs 880nm
(2) - GaP 570nm/Yellow Green
(3) - GaAsP/GaP 585nm/Yellow
(10) - GaAs/GaAs & GaAlAs/GaAs 940nm
(A) - GaN/SiC 430nm/Blue
(4) - GaAsp/GaP 635nm/Orange & Hi-Eff Red
(5) - GaP 700nm/Bright Red
(B) - InGaN/SiC 470nm/Blue
(C) - InGaN/SiC 505nm/Ultra Green
(6) - GaAlAs/GaAs 660nm/Super Red
(D) - InGaAl/SiC 525nm/Ultra Green
(8) - GaAsP/GaP 610nm/Super Red
F
O
R
W
A
R
D
C
U
R
R
E
N
T
(m
A
)
8
64 5
1
50
2 3
R
E
L
A
T
IV
E
L
U
M
IN
O
U
S
IN
T
E
N
S
IT
Y
40
30
20
10
0
1.2
1.6
2.0
2.4
2.6
3.0
4.0
F
O
R
W
A
R
D
C
U
R
R
E
N
T
(m
A
)
3.0
2.0
5
B
1.0
0
20
FORWARD VOLTAGE (Vf)
FORWARD CURRENT VS.
FORWARD VOLTAGE
R
E
L
A
T
IV 3
1
E 2
5
4
L
2
U
M 1 3
IN
O
U 0.5
S
IN
T
E
N
S 0.2
IT
Y
0.1
-30 -20
50
1
40
60
80
40
30
20
1
6
2,4,8,A
3
5
10
0
100
20
3KHz
300KHz
1KHz
100KHz F-REFRESH R ATE
10 10KH z
9
8
7
6
5
ID
C
M
A
X
.
Ip
e 4
a
k
M
A 3
X
.
2
-10
0
10
20
30
40
50
60
80
100
Ip
e
a
k
M
A
X
.
30KHz
3 KHz
300Hz
100KHz
10KHz 1KHz
100H z
10
9
8
7
6
5
4
3
2
70
1
AMBIENT TEM PER ATUR E Ta(℃ )
60
AMBIENT TEMPERATURE Ta( ℃)
FORWARD CURRENT VS. AMBIENT
TEMPERATURE
FORWARD CURRENT (mA)
RELATIVE LUMI NOUS
INTENSI TY VS. FORWARD
CURRENT
ID
C
M
A
X
.
40
1
10
100
1000
tp-PU LSE DU RATION uS
(1,2 ,3 ,4,6,8,B.D.J. K)
10,000
1
1
10
100
1000
tp-P ULSE DU RATION uS
(5)
NOTE:25℃ free air temperat ure unless otherw ise sp ecifie d
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10,000
SILICON PHOTO DIODES
BL-L3522PD
Packing and weighting
0.23g/pcs
1K pcs/bag
Maximum
6
Bag/Inner Box
3 Inner Box /Box
9 Inner Box /Box
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