BetLux BL-M23A881DUGUB Led dot matrix Datasheet

LED DOT MATRIX
BL-M23A881XXX
Features:
60.20mm (2.3”) Φ5.0 dot matrix LED display, RGB COLOR
Low current operation.
Excellent character appearance.
Easy mounting on P.C. Boards or sockets.
I.C. Compatible.
ROHS Compliance.
Electrical-optical characteristics: (Ta=25 )
Part No
Emitted
Row Cathode
Row Anode
Column Anode
Column Cathode
Color
BL-M23A881RGB-
BL-M23B881RGB-
XX
XX
BL-M23A881DUGU
BL-M23B881DUGU
B-XX
B-XX
Super Red
GaAlAs/GaAs,DH
660
Green
GaP/GaP
570
Ultra Blue
InGaN
470
Ultra Red
GaAlAs/GaAs,DDH
660
Ultra
Green
AlGaInP
574
1
.
w
w
Black
White
diffused
1.85
InGaN
470
2.20
Iv
TYP.(mcd
)
280
m
o
c
.
x
u
l
t
e
b
Ultra Blue
·-XX: Surface / Lens color
0
Number
Ref Surface Color
White
Epoxy Color
Water
clear
(Test Condition: IF=20mA)
VF
Chip
Unit:V
λP
Material
Typ
Max
(nm)
2.20
2.50
250
2.70
4.20
150
1.85
2.20
310
2.20
2.50
380
2.70
4.20
270
2
3
4
5
Gray
Red
Diffused
Red
Green
Diffused
Green
Yellow
Diffused
Absolute maximum ratings (Ta=25 )
w
Parameter
Forward Current IF
Power Dissipation Pd
Reverse Voltage VR
Peak Forward Current IPF
(Duty 1/10 @1KHZ)
Operation Temperature TOPR
Storage Temperature TSTG
Lead Soldering
Temperature
S
G
B
D
UG
UB
Unit
25
60
5
30
65
5
30
120
5
25
60
5
30
75
5
30
120
5
mA
mW
V
150
150
100
150
150
100
mA
-40 to +80
-40 to +85
Max.260±5 for 3 sec Max.
(1.6mm from the base of the epoxy bulb)
TSOL
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
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LED DOT MATRIX
BL-M23A881XXX
Package configuration & Internal circuit diagram
m
o
c
.
x
.
w
w
u
l
t
e
b
w
Notes:
1. All dimensions are in millimeters (inches)
2. Tolerance is ±0.25(0.01")unless otherwise noted.
3. Specifications are subject to change without notice.
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
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LED DOT MATRIX
BL-M23A881XXX
Typical electrical-optical characteristics curves:
(A)
1.0
(B)
(C)
(D)
(2)
(3)
(8)
(4)
(1) (6)
(5)
(9)
(10)
0.5
0
350
400
500
450
550
600
650
700
750
800
850
900
950
1000
Wavelength(nm)
RELATIVE INTENSITY Vs WAVELENGTH( p )
(1) - GaAsP/GaAs 655nm/Red
(2) - GaP 570nm/Yellow Green
(3) - GaAsP/GaP 585nm/Yellow
(4) - GaAsp/GaP 635nm/Orange & Hi-Eff Red
(5) - GaP 700nm/Bright Red
(6) - GaAlAs/GaAs 660nm/Super Red
(8) - GaAsP/GaP 610nm/Super Red
8
64 5
2 3
40
e
b
.
w
w
30
20
10
0
1.2
1.6
2.0
2.4
1
3.0
2.6
2.0
1.0
20
FORWARD VOLTAGE (Vf)
FORWARD CURRENT VS.
FORWARD VOLTAGE
1
5
4
2
3
60
80
0.2
-10
0
10
20
30
40
AMBIENT TEMPERATURE Ta( )
50
60
30
20
1
6
2,4,8,A
3
5
10
0
100
20
40
60
80
100
AMBIENT TEMPERATURE Ta( )
FORWARD CURRENT VS. AMBIENT
TEMPERATURE
300KHz
3KHz
10KHz
1KHz
100KHz F-REFRESH RATE
4
3
2
-20
40
3KHz
300Hz
30KHz
100KHz
10KHz 1KHz
100Hz
10
9
8
7
6
5
Ipeak MAX.
IDC MAX.
0.5
0.1
-30
40
10
9
8
7
6
5
Ipeak MAX.
IDC MAX.
RELATIVE LUMINOUS INTENSITY
1
B
FORWARD CURRENT (mA)
RELATIVE LUMINOUS
INTENSITY VS. FORWARD
CURRENT
w
3
2
5
50
0
3.0
m
o
c
.
x
lt u
4.0
FORWARD CURRENT(mA)
FORWARD CURRENT(mA)
RELATIVE LUMINOUS INTENSITY
1
50
(9) - GaAlAs 880nm
(10) - GaAs/GaAs & GaAlAs/GaAs 940nm
(A) - GaN/SiC 430nm/Blue
(B) - InGaN/SiC 470nm/Blue
(C) - InGaN/SiC 505nm/Ultra Green
(D) - InGaAl/SiC 525nm/Ultra Green
4
3
2
70
1
1
10
100
1000
tp-PULSE DURATION uS
(1,2,3,4,6,8,B.D.J.K)
NOTE:25
10,000
1
1
10
100
1000
tp-PULSE DURATION uS
(5)
free air temperature unless otherwise specified
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
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EMAIL: [email protected] , [email protected]
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