PHILIPS BLC6G10LS-160 Uhf power ldmos transistor Datasheet

BLC6G10-160; BLC6G10LS-160
UHF power LDMOS transistor
Rev. 01 — 12 May 2006
Objective data sheet
1. Product profile
1.1 General description
160 W LDMOS power transistor for base station applications at frequencies from
800 MHz to 1000 MHz.
Table 1:
Typical performance
Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.
Mode of operation
2-carrier W-CDMA
[1]
f
VDS
PL(AV)
Gp
ηD
ACPR
(MHz)
(V)
(W)
(dB)
(%)
(dBc)
920 to 960
32
32
23
28
−40[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 5 MHz
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
n Typical 2-carrier W-CDMA performance at frequencies of 920 MHz and 960 MHz, a
supply voltage of 32 V and an IDq of 1200 mA:
u Average output power = 32 W
u Power gain = 23 dB
u Efficiency = 28 %
u ACPR = −40 dBc
n Easy power control
n Integrated ESD protection
n Excellent ruggedness
n High efficiency
n Excellent thermal stability
n Designed for broadband operation (800 MHz to 1000 MHz)
n Internally matched for ease of use
1.3 Applications
n RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and
multi carrier applications in the 800 MHz to 1000 MHz frequency range.
BLC6G10-160; BLC6G10LS-160
Philips Semiconductors
UHF power LDMOS transistor
2. Pinning information
Table 2:
Pinning
Pin
Description
Simplified outline
Symbol
BLC6G10-160 (SOT895-1)
1
drain
2
gate
3
source
1
1
3
[1]
2
2
3
sym112
BLC6G10LS-160 (SOT896-1)
1
drain
2
gate
3
1
1
3
[1]
source
2
2
3
sym112
[1]
Connected to flange
3. Ordering information
Table 3:
Ordering information
Type number
Package
Name
Description
Version
BLC6G10-160
-
plastic flanged cavity package; 2 mounting slots; 2 leads
SOT895-1
plastic earless flanged cavity package; 2 leads
SOT896-1
BLC6G10LS-160 -
4. Limiting values
Table 4:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Min
Max
Unit
VDS
drain-source voltage
Conditions
-
65
V
VGS
gate-source voltage
−0.5
+13
V
ID
drain current
-
<tbd>
A
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
-
200
°C
BLC6G10-160_6G10LS-160_1
Objective data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 12 May 2006
2 of 9
BLC6G10-160; BLC6G10LS-160
Philips Semiconductors
UHF power LDMOS transistor
5. Thermal characteristics
Table 5:
Symbol
Thermal characteristics
Parameter
Conditions
Type
Min
Tcase = 80 °C; BLC6G10-160
Rth(j-case) thermal resistance
from junction to case PL = 32 W
BLC6G10LS-160
Typ
Max
Unit
<tbd> <tbd> <tbd> K/W
<tbd> 0.43
0.52
K/W
6. Characteristics
Table 6:
Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Min
Typ
Max
Unit
V(BR)DSS drain-source breakdown
voltage
VGS = 0 V; ID = 0.5 mA
65
-
-
V
VGS(th)
gate-source threshold voltage
VDS = 10 V; ID = 150 mA
<tbd> 2
VGSq
gate-source quiescent voltage
VDS = 28 V; ID = 950 mA
<tbd> <tbd> <tbd> V
<tbd> V
IDSS
drain leakage current
VGS = 0 V; VDS = 28 V
-
-
5
µA
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
32
39
-
A
IGSS
gate leakage current
VGS = 13 V; VDS = 0 V
-
-
450
nA
gfs
forward transconductance
VDS = 10 V; ID = 7.5 A
-
13.5
-
S
RDS(on)
drain-source on-state
resistance
VGS = VGS(th) + 3.75 V;
ID = 5.25 A
-
0.07
-
Ω
Crs
feedback capacitance
VGS = 0 V; VDS = 28 V;
f = 1 MHz
-
<tbd> -
pF
7. Application information
Table 7:
Application information
Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1-64 PDPCH; f1 = 922.5 MHz; f2 = 927.5 MHz; f3 = 952.5 MHz; f4 = 957.5 MHz;
RF performance at VDS = 28 V; IDq = 1200 mA; Tcase = 25 °C; unless otherwise specified; in a
class-AB production test circuit
Symbol
Parameter
Conditions
Min
PL(AV)
average output power
Gp
Typ
Max
Unit
-
32
-
W
power gain
PL(AV) = 32 W
21.5
23
24.5
dB
IRL
input return loss
PL(AV) = 32 W
-
−6.5
−4.7
dB
ηD
drain efficiency
PL(AV) = 32 W
26
28
-
%
ACPR
adjacent channel power ratio
PL(AV) = 32 W
-
−40
−37
dBc
7.1 Ruggedness in class-AB operation
The BLC6G10-160 and BLC6G10LS-160 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
VDS = 28 V; IDq = 1200 mA; PL = 160 W (CW); f = 960 MHz.
BLC6G10-160_6G10LS-160_1
Objective data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 12 May 2006
3 of 9
BLC6G10-160; BLC6G10LS-160
Philips Semiconductors
UHF power LDMOS transistor
8. Package outline
Plastic flanged cavity package; 2 mounting slots; 2 leads
SOT895-1
D
F
A
D1
U1
B
q
C
c
1
L
H
w1
M
A
M
p
U2
B
M
E
E1
3
A
2
w2
b
0
5
M
C
Q
M
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
c
D
D1
E
E1
F
H
L
p
Q
q
U1
U2
w1
w2
mm
4.1
3.3
12.83
12.57
0.17
0.14
19.9
19.7
20.42
20.12
9.53
9.27
9.78
9.53
1.14
0.89
19.94
18.92
5.3
4.5
3.38
3.12
1.75
1.50
27.94
34.16
33.91
9.98
9.65
0.25
0.6
1.345 0.392
0.161 0.505 0.0065 0.785 0.804 0.375 0.385 0.045 0.785 0.209 0.133 0.069
1.100
1.335 0.380
0.130 0.495 0.0055 0.775 0.792 0.365 0.375 0.035 0.745 0.177 0.123 0.059
0.01
0.023
inches
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
05-06-28
06-02-21
SOT895-1
Fig 1. Package outline SOT895-1
BLC6G10-160_6G10LS-160_1
Objective data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 12 May 2006
4 of 9
BLC6G10-160; BLC6G10LS-160
Philips Semiconductors
UHF power LDMOS transistor
Plastic earless flanged cavity package; 2 leads
SOT896-1
D
F
A
3
D1
D
c
U1
1
L
H
U2
E
E1
2
w2
b
0
5
M
D
Q
M
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
c
D
D1
E
E1
F
H
L
Q
U1
U2
w2
mm
4.1
3.3
12.83
12.57
0.17
0.14
19.9
19.7
20.42
20.12
9.53
9.27
9.78
9.53
1.14
0.89
19.94
18.92
5.3
4.5
1.75
1.50
20.70
20.45
9.98
9.65
0.6
inches
0.161 0.505 0.0065 0.785 0.804 0.375 0.385 0.045 0.785 0.209 0.069 0.815 0.392
0.023
0.130 0.495 0.0055 0.775 0.792 0.365 0.375 0.035 0.745 0.177 0.059 0.805 0.380
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
05-06-28
06-02-21
SOT896-1
Fig 2. Package outline SOT896-1
BLC6G10-160_6G10LS-160_1
Objective data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 12 May 2006
5 of 9
Philips Semiconductors
BLC6G10-160; BLC6G10LS-160
UHF power LDMOS transistor
9. Abbreviations
Table 8:
Abbreviations
Acronym
Description
3GPP
Third Generation Partnership Project
CCDF
Complementary Cumulative Distribution Function
CDMA
Code Division Multiple Access
CW
Continuous Wave
DPCH
Dedicated Physical CHannel
EDGE
Enhanced Data rates for GSM Evolution
GSM
Global System for Mobile communications
LDMOS
Laterally Diffused Metal Oxide Semiconductor
PAR
Peak-to-Average power Ratio
PDPCH
transmission Power of the Dedicated Physical CHannel
RF
Radio Frequency
VSWR
Voltage Standing Wave Ratio
W-CDMA
Wideband Code Division Multiple Access
BLC6G10-160_6G10LS-160_1
Objective data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 12 May 2006
6 of 9
BLC6G10-160; BLC6G10LS-160
Philips Semiconductors
UHF power LDMOS transistor
10. Revision history
Table 9:
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BLC6G10-160_6G10LS-160_1
20060512
Objective data sheet
-
-
BLC6G10-160_6G10LS-160_1
Objective data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 12 May 2006
7 of 9
Philips Semiconductors
BLC6G10-160; BLC6G10LS-160
UHF power LDMOS transistor
11. Legal information
11.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.semiconductors.philips.com.
11.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Philips Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Philips Semiconductors
sales office. In case of any inconsistency or conflict with the short data sheet,
the full data sheet shall prevail.
11.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, Philips Semiconductors does not give any representations
or warranties, expressed or implied, as to the accuracy or completeness of
such information and shall have no liability for the consequences of use of
such information.
Right to make changes — Philips Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — Philips Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a Philips Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Philips Semiconductors accepts no liability for inclusion and/or use
of Philips Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is for the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Philips Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and and
operation of the device at these or any other conditions above those given in
the Characteristics sections of this document is not implied. Exposure to
limiting values for extended periods may affect device reliability.
Terms and conditions of sale — Philips Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.semiconductors.philips.com/profile/terms, including those
pertaining to warranty, intellectual property rights infringement and limitation
of liability, unless explicitly otherwise agreed to in writing by Philips
Semiconductors. In case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: [email protected]
BLC6G10-160_6G10LS-160_1
Objective data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 12 May 2006
8 of 9
Philips Semiconductors
BLC6G10-160; BLC6G10LS-160
UHF power LDMOS transistor
13. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
7.1
8
9
10
11
11.1
11.2
11.3
11.4
12
13
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . .
General description. . . . . . . . . . . . . . . . . . . . . .
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pinning information . . . . . . . . . . . . . . . . . . . . . .
Ordering information . . . . . . . . . . . . . . . . . . . . .
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal characteristics. . . . . . . . . . . . . . . . . . .
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . .
Application information. . . . . . . . . . . . . . . . . . .
Ruggedness in class-AB operation. . . . . . . . . .
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . .
Revision history . . . . . . . . . . . . . . . . . . . . . . . . .
Legal information. . . . . . . . . . . . . . . . . . . . . . . .
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Contact information. . . . . . . . . . . . . . . . . . . . . .
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
1
1
1
2
2
2
3
3
3
3
4
6
7
8
8
8
8
8
8
9
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© Koninklijke Philips Electronics N.V. 2006.
All rights reserved.
For more information, please visit: http://www.semiconductors.philips.com.
For sales office addresses, email to: [email protected].
Date of release: 12 May 2006
Document identifier: BLC6G10-160_6G10LS-160_1
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