PHILIPS BLC6G22LS-100 Uhf power ldmos transistor Datasheet

BLC6G22-100; BLC6G22LS-100
UHF power LDMOS transistor
Rev. 01 — 30 January 2006
Objective data sheet
1. Product profile
1.1 General description
100 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
Table 1:
Typical performance
RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation
2-carrier W-CDMA
[1]
f
VDS
PL(AV)
Gp
ηD
IMD3
ACPR
(MHz)
(V)
(W)
(dB)
(%)
(dBc)
(dBc)
2110 to 2170
28
25
18
32
−37 [1]
−40 [1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 10 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
■ Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a
supply voltage of 28 V and an IDq of 950 mA:
◆ Output power = 25 W (AV)
◆ Gain = 18 dB
◆ Efficiency = 32 %
◆ IMD3 = −37 dBc
◆ ACPR = −40 dBc
■ Easy power control
■ Integrated ESD protection
■ Excellent ruggedness
■ High efficiency
■ Excellent thermal stability
■ Designed for broadband operation (2000 MHz to 2200 MHz)
■ Internally matched for ease of use
BLC6G22-100; BLC6G22LS-100
Philips Semiconductors
UHF power LDMOS transistor
1.3 Applications
■ RF power amplifiers for W-CDMA base stations and multi carrier applications in the
2000 MHz to 2200 MHz frequency range.
2. Pinning information
Table 2:
Pinning
Pin
Description
Simplified outline
Symbol
BLC6G22-100 (SOT895-1)
1
drain
2
gate
3
1
1
3
[1]
source
2
2
3
sym112
BLC6G22LS-100 (SOT896-1)
1
drain
2
gate
3
1
1
3
[1]
source
2
2
3
sym112
[1]
Connected to flange
3. Ordering information
Table 3:
Ordering information
Type number
BLC6G22-100
Package
Name
Description
Version
-
plastic flanged cavity package; 2 mounting slots; 2 leads
SOT895-1
plastic earless flanged cavity package; 2 leads
SOT896-1
BLC6G22LS-100 -
4. Limiting values
Table 4:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VDS
Conditions
Min
Max
Unit
drain-source voltage
-
65
V
VGS
gate-source voltage
−0.5
+13
V
ID
drain current
-
<tbd> A
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
-
225
°C
BLC6G22-100_6G22LS-100_1
Objective data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 30 January 2006
2 of 9
BLC6G22-100; BLC6G22LS-100
Philips Semiconductors
UHF power LDMOS transistor
5. Thermal characteristics
Table 5:
Thermal characteristics
Symbol
Parameter
Rth(j-case)
thermal resistance
Tcase = 80 °C; BLC6G22-100
from junction to case PL = 25 W
BLC6G22LS-100
Conditions
Type
Min
Typ
Max
Unit
<tbd> <tbd> <tbd> K/W
<tbd> 0.45
0.54
K/W
6. Characteristics
Table 6:
Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Min
Typ
Max
Unit
V(BR)DSS drain-source breakdown
voltage
VGS = 0 V; ID = 0.5 mA
65
-
-
V
VGS(th)
gate-source threshold voltage
VDS = 10 V; ID = 150 mA
<tbd> 2
VGSq
gate-source quiescent voltage
VDS = 28 V; ID = 950 mA
<tbd> <tbd> <tbd> V
<tbd> V
IDSS
drain leakage current
VGS = 0 V; VDS = 28 V
-
-
5
µA
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
23
27
-
A
IGSS
gate leakage current
VGS = 13 V; VDS = 0 V
-
-
450
nA
gfs
forward transconductance
VDS = 10 V; ID = 7.5 A
-
10.5
-
S
RDS(on)
drain-source on-state
resistance
VGS = VGS(th) + 3.75 V;
ID = 5.25 A
-
0.1
-
Ω
Crs
feedback capacitance
VGS = 0 V; VDS = 28 V;
f = 1 MHz
-
<tbd> -
pF
7. Application information
Table 7:
Application information
Mode of operation: 2-carrier W-CDMA; PAR 7 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1-64 PDPCH; f1 = 2112.5 MHz; f2 = 2122.5 MHz; f3 = 2157.5 MHz; f4 = 2167.5 MHz;
RF performance at VDS = 28 V; IDq = 950 mA; Tcase = 25 °C; unless otherwise specified; in a
class-AB production test circuit
Symbol Parameter
Conditions
Min
Typ
Max
Unit
-
PL(AV)
average output power
25
-
W
Gp
power gain
PL(AV) = 25 W
<tbd> 18
-
dB
IRL
input return loss
PL(AV) = 25 W
-
ηD
drain efficiency
PL(AV) = 25 W
<tbd> 32
IMD3
third order intermodulation distortion PL(AV) = 25 W
-
−37
<tbd> dBc
ACPR
adjacent channel power ratio
PL(AV) = 25 W
-
−40
<tbd> dBc
−9
<tbd> dB
-
%
7.1 Ruggedness in class-AB operation
The BLC6G22-100 and BLC6G22LS-100 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
VDS = 28 V; IDq = 950 mA; PL = 100 W (CW); f = 2170 MHz.
BLC6G22-100_6G22LS-100_1
Objective data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 30 January 2006
3 of 9
BLC6G22-100; BLC6G22LS-100
Philips Semiconductors
UHF power LDMOS transistor
8. Package outline
Plastic flanged cavity package; 2 mounting slots; 2 leads
SOT895-1
D
F
A
D1
U1
B
q
C
c
1
L
H
w1
M
A
M
p
U2
B
M
E
E1
3
A
2
w2
b
0
5
M
C
Q
M
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
c
D
D1
E
E1
F
H
L
p
Q
q
U1
U2
w1
w2
mm
4.1
3.3
12.83
12.57
0.17
0.14
19.9
19.7
20.42
20.12
9.53
9.27
9.78
9.53
1.14
0.89
19.94
18.92
5.3
4.5
3.38
3.12
1.75
1.50
27.94
34.16
33.91
9.91
9.65
0.25
0.6
1.345 0.390
0.161 0.505 0.0065 0.785 0.804 0.375 0.385 0.045 0.785 0.209 0.133 0.069
1.100
1.335 0.380
0.130 0.495 0.0055 0.775 0.792 0.365 0.375 0.035 0.745 0.177 0.123 0.059
0.01
0.023
inches
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
05-06-22
05-06-28
SOT895-1
Fig 1. Package outline SOT895-1
BLC6G22-100_6G22LS-100_1
Objective data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 30 January 2006
4 of 9
BLC6G22-100; BLC6G22LS-100
Philips Semiconductors
UHF power LDMOS transistor
Plastic earless flanged cavity package; 2 leads
SOT896-1
D
F
A
3
D1
D
c
U1
1
L
H
U2
E
E1
2
w2
b
0
5
M
D
Q
M
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
c
D
D1
E
E1
F
H
L
Q
U1
U2
w2
mm
4.1
3.3
12.83
12.57
0.17
0.14
19.9
19.7
20.42
20.12
9.53
9.27
9.78
9.53
1.14
0.89
19.94
18.92
5.3
4.5
1.75
1.50
20.70
20.45
9.91
9.65
0.6
inches
0.161 0.505 0.0065 0.785 0.804 0.375 0.385 0.045 0.785 0.209 0.069 0.815 0.390
0.023
0.130 0.495 0.0055 0.775 0.792 0.365 0.375 0.035 0.745 0.177 0.059 0.805 0.380
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
05-06-22
05-06-28
SOT896-1
Fig 2. Package outline SOT896-1
BLC6G22-100_6G22LS-100_1
Objective data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 30 January 2006
5 of 9
Philips Semiconductors
BLC6G22-100; BLC6G22LS-100
UHF power LDMOS transistor
9. Abbreviations
Table 8:
Abbreviations
Acronym
Description
3GPP
Third Generation Partnership Project
CCDF
Complementary Cumulative Distribution Function
CW
Continuous Wave
DPCH
Dedicated Physical CHannel
LDMOS
Laterally Diffused Metal Oxide Semiconductor
PAR
Peak-to-Average power Ratio
PDPCH
transmission Power of the Dedicated Physical CHannel
RF
Radio Frequency
VSWR
Voltage Standing Wave Ratio
W-CDMA
Wideband Code Division Multiple Access
BLC6G22-100_6G22LS-100_1
Objective data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 30 January 2006
6 of 9
Philips Semiconductors
BLC6G22-100; BLC6G22LS-100
UHF power LDMOS transistor
10. Revision history
Table 9:
Revision history
Document ID
Release date
Data sheet status
Change notice Doc. number
Supersedes
BLC6G22-100_6G22
LS-100_1
20060130
Objective data sheet
-
-
BLC6G22-100_6G22LS-100_1
Objective data sheet
-
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 30 January 2006
7 of 9
Philips Semiconductors
BLC6G22-100; BLC6G22LS-100
UHF power LDMOS transistor
11. Data sheet status
Level
Data sheet status [1]
Product status [2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
[2]
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
12. Definitions
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
makes no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
14. Trademarks
13. Disclaimers
Notice — All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
15. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: [email protected]
BLC6G22-100_6G22LS-100_1
Objective data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 30 January 2006
8 of 9
Philips Semiconductors
BLC6G22-100; BLC6G22LS-100
UHF power LDMOS transistor
16. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
7.1
8
9
10
11
12
13
14
15
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . .
General description. . . . . . . . . . . . . . . . . . . . . .
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pinning information . . . . . . . . . . . . . . . . . . . . . .
Ordering information . . . . . . . . . . . . . . . . . . . . .
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal characteristics. . . . . . . . . . . . . . . . . . .
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . .
Application information. . . . . . . . . . . . . . . . . . .
Ruggedness in class-AB operation. . . . . . . . . .
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . .
Revision history . . . . . . . . . . . . . . . . . . . . . . . . .
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . .
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Contact information . . . . . . . . . . . . . . . . . . . . .
1
1
1
2
2
2
2
3
3
3
3
4
6
7
8
8
8
8
8
© Koninklijke Philips Electronics N.V. 2006
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 30 January 2006
Document number: BLC6G22-100_6G22LS-100_1
Published in The Netherlands
Similar pages