BLF7G20LS-140P Power LDMOS transistor Rev. 2 — 17 August 2010 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(AV) Gp ηD ACPR400k ACPR600k EVMrms (MHz) (mA) (V) (W) (dB) (%) (dBc) (dBc) (%) CW 1805 to 1880 850 28 125 17 54 - - - GSM EDGE 1805 to 1880 850 28 60 17.5 41 −61 −75 2.7 1.2 Features and benefits Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for broadband operation (1800 MHz to 2000 MHz) Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent pre-distortability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications RF power amplifiers for base stations and multi carrier applications in the 1800 MHz to 2000 MHz frequency range BLF7G20LS-140P NXP Semiconductors Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description 1 drain1 2 drain2 3 gate1 4 gate2 5 Simplified outline 1 Graphic symbol 1 2 5 3 5 [1] source 3 4 4 2 sym117 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description BLF7G20LS-140P - Version earless flanged LDMOST ceramic package; 4 leads SOT1121B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS Conditions Min Max Unit drain-source voltage - 65 V VGS gate-source voltage −0.5 +13 V Tstg storage temperature −65 +150 °C Tj junction temperature - 200 °C 5. Thermal characteristics Table 5. BLF7G20LS-140P Product data sheet Thermal characteristics Symbol Parameter Conditions Typ Rth(j-c) thermal resistance from junction to case Tcase = 80 °C; PL = 100 W 0.41 K/W All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 August 2010 Unit © NXP B.V. 2010. All rights reserved. 2 of 13 BLF7G20LS-140P NXP Semiconductors Power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C; per section unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.9 mA 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 90 mA 1.5 1.9 2.3 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 2 μA IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 14 - - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 200 nA gfs forward transconductance VDS = 10 V; ID = 2.5 A - 6.45 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 3.15 A - 0.15 - Ω 7. Test information Table 7. Application information f = 1805 MHz and 1880 MHz; RF performance at VDS = 28 V; IDq = 850 mA; Tcase = 25 °C; 2 sections combined unless otherwise specified; in a class-AB production test circuit. Symbol Parameter Conditions Min Typ Max Unit Mode of operation: GSM EDGE; PL(AV) = 60 W Gp power gain 16.3 17.5 - dB RLin input return loss - −15 −8 dB ηD drain efficiency 37 41 - % ACPR400k adjacent channel power ratio (400 kHz) - −61 −56.5 dBc ACPR600k adjacent channel power ratio (600 kHz) - −75 −69.5 dBc EVMrms RMS EDGE signal distortion error - 2.7 4.0 % EVMM peak EDGE signal distortion error - 8.5 12.5 % Mode of operation: CW; PL(AV) = 125 W Gp power gain 16 17 - dB ηD drain efficiency 48 54 - % 7.1 Ruggedness in class-AB operation The BLF7G20LS-140P is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 850 mA; PL = 140 W (CW); f = 1805 MHz. BLF7G20LS-140P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 August 2010 © NXP B.V. 2010. All rights reserved. 3 of 13 BLF7G20LS-140P NXP Semiconductors Power LDMOS transistor 7.2 One-tone CW 001aam399 20 Gp (dB) 19 70 ηD (%) 60 Gp 18 17 50 40 ηD 16 30 15 20 14 10 13 0 30 60 90 120 0 150 180 PL (W) VDS = 28 V; IDq = 850 mA; f = 1880 MHz. Fig 1. One-tone CW power gain and drain efficiency as function of load power; typical values 7.3 Two-tone CW 001aam400 19 Gp (dB) 18.5 60 ηD (%) 50 001aam401 0 IMD (dBc) −10 IMD3 −20 18 40 Gp 17.5 30 −30 IMD5 −40 IMD7 ηD 17 20 16.5 10 −50 −60 16 0 20 40 60 80 0 100 PL (W) −70 −80 VDS = 28 V; IDq = 850 mA; f1 = 1879.95 MHz; f2 = 1880.05 MHz. Fig 2. Two-tone CW power gain and drain efficiency as function of load power; typical values BLF7G20LS-140P Product data sheet 0 20 40 60 80 100 PL (W) VDS = 28 V; IDq = 850 mA; f1 = 1879.95 MHz; f2 = 1880.05 MHz. Fig 3. Two-tone CW intermodulation distortion as a function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 August 2010 © NXP B.V. 2010. All rights reserved. 4 of 13 BLF7G20LS-140P NXP Semiconductors Power LDMOS transistor 7.4 GSM EDGE 001aam402 19 Gp (dB) 18.5 001aam403 −45 ACPR (dBc) −50 60 ηD (%) 50 −55 18 40 −60 Gp 17.5 30 ACPR400k −65 17 20 ηD −70 ACPR600k 16.5 10 16 0 20 40 60 80 −75 −80 0 100 PL (W) VDS = 28 V; IDq = 850 mA; f = 1880 MHz. Fig 4. 0 20 40 60 80 100 PL (W) VDS = 28 V; IDq = 850 mA; f = 1880 MHz. GSM EDGE power gain and drain efficiency as function of load power; typical values Fig 5. GSM EDGE ACPR at 400 kHz and at 600 kHz as function of load power; typical values 001aam404 50 EVM (%) 40 30 EVMM 20 EVMrms 10 0 0 20 40 60 80 100 PL (W) VDS = 28 V; IDq = 850 mA; f = 1880 MHz. Fig 6. BLF7G20LS-140P Product data sheet GSM-EDGE RMS EVM and peak EVM as function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 August 2010 © NXP B.V. 2010. All rights reserved. 5 of 13 BLF7G20LS-140P NXP Semiconductors Power LDMOS transistor 7.5 Single carrier IS-95 Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz. 001aam405 19 ηD (%) Gp (dB) 001aam406 −30 40 ACPR (dBc) ACPR885k −40 30 18.5 Gp −50 20 18 ACPR1980k ηD −60 10 17.5 17 0 10 20 −70 −80 0 40 30 0 10 20 PL (W) 40 PL (W) VDS = 28 V; IDq = 1080 mA; f = 1880 MHz. Fig 7. 30 VDS = 28 V; IDq = 1080 mA; f = 1880 MHz. Single carrier IS-95 power gain and drain efficiency as function of load power; typical values Fig 8. Single carrier IS-95 ACPR at 885 kHz and at 1980 kHz as function of load power; typical values 001aam407 11 PAR 10 9 8 7 6 5 0 10 20 30 40 PL (W) VDS = 28 V; IDq = 1080 mA; f = 1880 MHz. Fig 9. BLF7G20LS-140P Product data sheet Single carrier IS-95 peak-to-average power ratio as a function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 August 2010 © NXP B.V. 2010. All rights reserved. 6 of 13 BLF7G20LS-140P NXP Semiconductors Power LDMOS transistor 7.6 Single carrier W-CDMA 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. Channel bandwidth is 3.84 MHz. 001aam408 19.5 Gp (dB) 19 18.5 001aam409 −20 60 ηD (%) 50 ACPR (dBc) ACPR5M −30 40 −40 Gp 18 ACPR10M 30 ηD −50 17.5 20 17 10 16.5 0 20 40 60 80 −60 −70 0 100 PL (W) VDS = 28 V; IDq = 1080 mA; f = 1880 MHz. 0 15 30 45 60 75 90 PL (W) VDS = 28 V; IDq = 1080 mA; f = 1880 MHz. Fig 10. Single carrier W-CDMA power gain and drain efficiency as function of load power; typical values Fig 11. Single carrier W-CDMA ACPR at 5 MHz and at 10 MHz as function of load power; typical values 7.7 Test circuit Table 8. List of components For test circuit see Figure 12. BLF7G20LS-140P Product data sheet Component Description Value C1, C2, C3 multilayer ceramic chip capacitor 24 pF [1] C4, C5 multilayer ceramic chip capacitor 4.7 μF [2] C6, C7, C8 multilayer ceramic chip capacitor 11 pF [3] C9, C10 multilayer ceramic chip capacitor 10 μF [2] C11 electrolytic capacitor 470 μF; 63 V R1, R2 SMD resistor 12 Ω [1] American Technical Ceramics type 100A or capacitor of same quality. [2] TDK or capacitor of same quality. [3] American Technical Ceramics type 100B or capacitor of same quality. All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 August 2010 Remarks Philips 1206 © NXP B.V. 2010. All rights reserved. 7 of 13 BLF7G20LS-140P NXP Semiconductors Power LDMOS transistor C11 C4 C2 C9 C6 R1 C8 C1 BLF7G20L-140P OUTPUT REV 1 BLF7G20L-140P INPUT REV 1 R2 C5 C7 C3 C10 001aal830 Printed-Circuit Board (PCB): Taconic RF35; εr = 3.5 F/m; thickness = 0.76 mm; thickness copper plating = 35 μm. See Table 8 for a list of components. Fig 12. Component layout for class-AB production test circuit 7.8 Impedance information Table 9. Typical impedance Typical values valid for both section in parallel unless otherwise specified. f ZS ZL MHz Ω Ω 1800 1.1 − j3.8 1.8 − j2.8 1840 1.3 − j3.7 1.7 − j2.6 1880 1.2 − j3.8 1.6 − j2.5 gate drain ZS ZL 001aal831 Fig 13. Definition of transistor impedance BLF7G20LS-140P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 August 2010 © NXP B.V. 2010. All rights reserved. 8 of 13 BLF7G20LS-140P NXP Semiconductors Power LDMOS transistor 8. Package outline Earless flanged LDMOST ceramic package; 4 leads SOT1121B D A F 5 D1 D U1 w2 H1 H c D 2 1 U2 E1 E 4 3 b Q w3 e 0 5 10 mm scale Dimensions Unit(1) mm A max 4.75 nom min 3.45 b c D D1 3.94 0.18 20.02 19.96 3.68 0.08 19.61 19.66 e E E1 F H H1 Q U1 U2 w2 w3 9.53 9.53 1.14 19.94 12.83 1.70 20.70 9.91 8.89 0.51 0.25 9.27 9.27 0.89 18.92 12.57 1.45 20.45 9.65 max 0.187 0.155 0.007 0.788 0.786 0.375 0.375 0.045 0.785 0.505 0.067 0.815 0.39 inches nom 0.35 0.02 0.01 min 0.136 0.145 0.003 0.772 0.774 0.365 0.365 0.035 0.745 0.495 0.057 0.805 0.38 Note 1. millimeter dimensions are derived from the original inch dimensions. 2. dimension is measured 0.030 inch (0.76 mm) from the body. Outline version References IEC JEDEC JEITA sot1121b_po European projection Issue date 09-10-12 09-12-14 SOT1121B Fig 14. Package outline SOT1121B BLF7G20LS-140P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 August 2010 © NXP B.V. 2010. All rights reserved. 9 of 13 BLF7G20LS-140P NXP Semiconductors Power LDMOS transistor 9. Abbreviations Table 10. Abbreviations Acronym Description CW Continuous Wave EDGE Enhanced Data rates for GSM Evolution ESD ElectroStatic Discharge GSM Global System for Mobile communications IS-95 Interim Standard 95 LDMOS Laterally Diffused Metal Oxide Semiconductor LDMOST Laterally Diffused Metal Oxide Semiconductor Transistor RF Radio Frequency SMD Surface Mounted Device VSWR Voltage Standing Wave Ratio W-CDMA Wideband Code Division Multiple Access 10. Revision history Table 11. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF7G20LS-140P v.2 20100817 Product data sheet - BLF7G20L-140P_ 7G20LS-140P v.1 Modifications: BLF7G20L-140P_7G20LS-140P v.1 BLF7G20LS-140P Product data sheet • • • • • • • • • This document now only describes the BLF7G20LS-140P. Table 1 on page 1: changed some values. Table 4 on page 2: removed drain current specification. Table 6 on page 3: added typical value for gfs. Table 7 on page 3: changed some values. Section 7.2 on page 4: updated the figures. Section 7.3 on page 4: updated the figures. Section 7.4 on page 5: updated the figures. Section 7.5 on page 6: updated the figures. 20100421 Objective data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 August 2010 - - © NXP B.V. 2010. All rights reserved. 10 of 13 BLF7G20LS-140P NXP Semiconductors Power LDMOS transistor 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. 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All rights reserved. 11 of 13 BLF7G20LS-140P NXP Semiconductors Power LDMOS transistor Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BLF7G20LS-140P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 August 2010 © NXP B.V. 2010. All rights reserved. 12 of 13 BLF7G20LS-140P NXP Semiconductors Power LDMOS transistor 13. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 7.5 7.6 7.7 7.8 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 3 One-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Two-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 4 GSM EDGE . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Single carrier IS-95 . . . . . . . . . . . . . . . . . . . . . . 6 Single carrier W-CDMA . . . . . . . . . . . . . . . . . . 7 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Impedance information . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 17 August 2010 Document identifier: BLF7G20LS-140P