PHILIPS BLF7G27L-150P Power ldmos transistor Datasheet

BLF7G27L-150P;
BLF7G27LS-150P
Power LDMOS transistor
Rev. 2 — 12 July 2013
Product data sheet
1. Product profile
1.1 General description
150 W LDMOS power transistor for base station applications at frequencies from
2500 MHz to 2700 MHz.
Table 1.
Typical performance
Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Mode of operation
f
IS-95
Single carrier W-CDMA 2500 to 2700
D
IDq
VDS PL(AV)
Gp
ACPR885k ACPR5M
(MHz)
(mA)
(V)
(W)
(dB) (%) (dBc)
2500 to 2700
1200
28
30
16.5 26
47[1]
-
1200
28
45
16.5 31
-
38[2]
(dBc)
[1]
Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at
[2]
3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. Channel bandwidth is 3.84
MHz.
0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
1.2 Features and benefits









Excellent ruggedness
High efficiency
Low Rth providing excellent thermal stability
Designed for broadband operation (2500 MHz to 2700 MHz)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 RF power amplifiers for base stations and multi carrier applications in the 2500 MHz to
2700 MHz frequency range
BLF7G27L-150P; BLF7G27LS-150P
NXP Semiconductors
Power LDMOS transistor
2. Pinning information
Table 2.
Pinning
Pin
Description
Simplified outline
Graphic symbol
BLF7G27L-150P (SOT539A)
1
drain1
2
drain2
3
gate1
4
gate2
5
1
2
1
5
3
3
4
5
4
[1]
source
2
sym117
BLF7G27LS-150P (SOT539B)
1
drain1
2
drain2
3
gate1
4
gate2
5
source
1
2
1
5
3
3
4
5
4
[1]
2
sym117
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name Description
Version
BLF7G27L-150P
-
flanged balanced LDMOST ceramic package;
2 mounting holes; 4 leads
SOT539A
BLF7G27LS-150P
-
earless flanged balanced LDMOST ceramic package;
4 leads
SOT539B
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
-
65
V
VGS
gate-source voltage
0.5
+13
V
ID
drain current
-
37
A
Tstg
storage temperature
65
+150
C
Tj
junction temperature
-
225
C
BLF7G27L-150P_7G27LS-150P
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Product data sheet
Rev. 2 — 12 July 2013
© NXP B.V. 2013. All rights reserved.
2 of 14
NXP Semiconductors
BLF7G27L-150P; BLF7G27LS-150P
Power LDMOS transistor
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol
Parameter
Conditions
Typ
Unit
Rth(j-c)
thermal resistance from junction to case
Tcase = 80 C; PL = 30 W
0.25
K/W
6. Characteristics
Table 6.
Characteristics
Tj = 25 C unless otherwise specified.
Symbol Parameter
Conditions
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 1 mA
Min
Typ
Max Unit
65
-
-
V
VGS(th)
gate-source threshold voltage
VDS = 10 V; ID = 100 mA
1.3
1.9
2.3
V
IDSS
drain leakage current
VGS = 0 V; VDS = 28 V
-
-
5
A
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
16.75 19
-
A
IGSS
gate leakage current
VGS = 11 V; VDS = 0 V
-
-
500
nA
gfs
forward transconductance
VDS = 10 V; ID = 3.57 A
-
0.86
-
S
RDS(on)
drain-source on-state resistance VGS = VGS(th) + 3.75 V;
ID = 3.5 A
-
0.14
-

7. Test information
Remark: All testing performed in a class-AB production test circuit.
Table 7.
Functional test information
Mode of operation: 1-carrier N-CDMA, single carrier IS-95 with pilot, paging, sync and 6 traffic
channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF, channel bandwidth
is 1.2288 MHz; f1 = 2500 MHz; f2 = 2700 MHz; RF performance at VDS = 28 V; IDq = 1200 mA;
Tcase = 25 C; unless otherwise specified.
Symbol
Parameter
Conditions
Min Typ Max Unit
PL(AV)
average output power
-
-
W
Gp
power gain
14.8 16.5 -
dB
RLin
input return loss
-
10 -
dB
D
drain efficiency
22
26
%
ACPR885k
adjacent channel power ratio (885 kHz)
43 47 -
30
-
dBc
7.1 Ruggedness in class-AB operation
The BLF7G27L-150P and BLF7G27LS-150P are capable of withstanding a load
mismatch corresponding to VSWR = 20 : 1 through all phases under the following
conditions: VDS = 28 V; IDq = 1200 mA; PL = 35 W (IS-95); f = 2500 MHz.
BLF7G27L-150P_7G27LS-150P
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Product data sheet
Rev. 2 — 12 July 2013
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3 of 14
BLF7G27L-150P; BLF7G27LS-150P
NXP Semiconductors
Power LDMOS transistor
7.2 Single carrier IS-95
Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13).
PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
001aam987
17
ηD
(%)
(3)
Gp
(dB)
001aam988
50
40
(1)
(3)
(2)
16
30
(1)
(2)
20
15
10
0
14
0
20
40
60
80
100
PL (W)
0
VDS = 28 V; IDq = 1200 mA.
20
60
80
100
PL (W)
VDS = 28 V; IDq = 1200 mA.
(1) f = 2500 MHz
(1) f = 2500 MHz
(2) f = 2600 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
(3) f = 2700 MHz
Fig 1.
40
Single carrier IS-95 power gain as a function of
load power; typical values
Fig 2.
Single carrier IS-95 drain efficiency as a
function of load power; typical values
BLF7G27L-150P_7G27LS-150P
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Product data sheet
Rev. 2 — 12 July 2013
© NXP B.V. 2013. All rights reserved.
4 of 14
BLF7G27L-150P; BLF7G27LS-150P
NXP Semiconductors
Power LDMOS transistor
001aam989
0
ACPR885
(dBc)
−10
001aam990
0
ACPR1980
(dBc)
−20
−20
−30
(3)
(2)
(1)
−40
(3)
(2)
(1)
−40
−50
−60
−60
−70
0
20
40
60
80
100
PL (W)
−80
VDS = 28 V; IDq = 1200 mA.
0
20
(1) f = 2500 MHz
(2) f = 2600 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
(3) f = 2700 MHz
Single carrier IS-95 ACPR at 885 kHz as a
function of load power; typical values
001aam991
12
60
80
100
PL (W)
VDS = 28 V; IDq = 1200 mA.
(1) f = 2500 MHz
Fig 3.
40
Fig 4.
Single carrier IS-95 ACPR at 1980 kHz as a
function of load power; typical values
001aam992
250
PL(M)
(W)
PAR
200
(1)
(2)
(3)
8
150
100
(1)
(2)
(3)
4
50
0
0
0
20
40
60
80
100
PL (W)
0
VDS = 28 V; IDq = 1200 mA.
20
60
80
100
PL (W)
VDS = 28 V; IDq = 1200 mA.
(1) f = 2500 MHz
(1) f = 2500 MHz
(2) f = 2600 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
(3) f = 2700 MHz
Fig 5.
40
Single carrier IS-95 peak-to-average power
ratio as a function of load power;
typical values
Fig 6.
Single carrier IS-95 peak power as a function
of load power; typical values
BLF7G27L-150P_7G27LS-150P
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Product data sheet
Rev. 2 — 12 July 2013
© NXP B.V. 2013. All rights reserved.
5 of 14
BLF7G27L-150P; BLF7G27LS-150P
NXP Semiconductors
Power LDMOS transistor
7.3 Pulsed CW
001aam993
17
001aam994
60
Gp
(dB)
ηD
(%)
16
15
(1)
(3)
(2)
40
(3)
(2)
(1)
14
20
13
12
0
0
40
80
120
160
200
PL (W)
0
VDS = 28 V; IDq = 1200 mA.
40
120
160
200
PL (W)
VDS = 28 V; IDq = 1200 mA.
(1) f = 2500 MHz
(1) f = 2500 MHz
(2) f = 2600 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
(3) f = 2700 MHz
Fig 7.
80
Pulsed CW power gain as a function of load
power; typical values
Fig 8.
Pulsed CW drain efficiency as a function of
load power; typical values
BLF7G27L-150P_7G27LS-150P
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Product data sheet
Rev. 2 — 12 July 2013
© NXP B.V. 2013. All rights reserved.
6 of 14
BLF7G27L-150P; BLF7G27LS-150P
NXP Semiconductors
Power LDMOS transistor
7.4 Single carrier W-CDMA
3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
Channel bandwidth is 3.84 MHz.
001aam995
17
001aam996
50
ηD
(%)
Gp
(dB)
40
16
(3)
(1)
(2)
(1)
(3)
(2)
30
20
15
10
0
14
0
40
80
120
0
40
PL (W)
120
PL (W)
VDS = 28 V; IDq = 1200 mA.
VDS = 28 V; IDq = 1200 mA.
(1) f = 2500 MHz
(1) f = 2500 MHz
(2) f = 2600 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
(3) f = 2700 MHz
Fig 9.
80
Single carrier W-CDMA power gain as a
function of load power; typical values
Fig 10. Single carrier W-CDMA drain efficiency as a
function of load power; typical values
BLF7G27L-150P_7G27LS-150P
All information provided in this document is subject to legal disclaimers.
Product data sheet
Rev. 2 — 12 July 2013
© NXP B.V. 2013. All rights reserved.
7 of 14
BLF7G27L-150P; BLF7G27LS-150P
NXP Semiconductors
Power LDMOS transistor
001aam997
0
001aam998
0
ACPR10M
(dBc)
−10
ACPR5M
(dBc)
−20
−20
−30
−40
(2)
(1)
(3)
−40
(2)
(1)
(3)
−50
−60
−60
0
40
80
120
−70
0
40
80
PL (W)
120
PL (W)
VDS = 28 V; IDq = 1200 mA.
VDS = 28 V; IDq = 1200 mA.
(1) f = 2500 MHz
(1) f = 2500 MHz
(2) f = 2600 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
(3) f = 2700 MHz
Fig 11. Single carrier W-CDMA ACPR at 5 MHz as a
function of load power; typical values
001aam999
8
Fig 12. Single carrier W-CDMA ACPR at 10 MHz as a
function of load power; typical values
001aan000
300
PAR
PL(M)
(W)
6
200
(2)
(1)
(3)
(3)
(1)
(2)
4
100
2
0
0
0
40
80
120
0
40
PL (W)
80
120
PL (W)
VDS = 28 V; IDq = 1200 mA.
VDS = 28 V; IDq = 1200 mA.
(1) f = 2500 MHz
(1) f = 2500 MHz
(2) f = 2600 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
(3) f = 2700 MHz
Fig 13. Single carrier W-CDMA peak-to-average power
ratio as a function of load power;
typical values
Fig 14. Single carrier W-CDMA peak output power as a
function of load power; typical values
BLF7G27L-150P_7G27LS-150P
All information provided in this document is subject to legal disclaimers.
Product data sheet
Rev. 2 — 12 July 2013
© NXP B.V. 2013. All rights reserved.
8 of 14
BLF7G27L-150P; BLF7G27LS-150P
NXP Semiconductors
Power LDMOS transistor
8. Package outline
Flanged balanced ceramic package; 2 mounting holes; 4 leads
SOT539A
D
A
F
D1
U1
B
q
C
w2 M C M
H1
1
c
2
E1
p
H U2
5
L
3
A
E
w1 M A M B M
4
w3 M
b
Q
e
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
mm
4.7
4.2
inches
b
c
D
D1
e
E
E1
11.81 0.18 31.55 31.52
9.50
13.72
11.56 0.10 30.94 30.96
9.30
9.53
9.27
F
H
H1
L
1.75 17.12 25.53 3.48
1.50 16.10 25.27 2.97
p
Q
q
3.30
3.05
2.26
2.01
35.56
U1
U2
w1
41.28 10.29
0.25
41.02 10.03
w2
w3
0.51
0.25
0.374 0.375 0.069 0.674 1.005 0.137 0.130 0.089
0.185 0.465 0.007 1.242 1.241
1.625 0.405
1.400
0.010 0.020 0.010
0.540
0.366 0.365 0.059 0.634 0.995 0.117 0.120 0.079
0.165 0.455 0.004 1.218 1.219
1.615 0.395
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
10-02-02
12-05-02
SOT539A
Fig 15. Package outline SOT539A
BLF7G27L-150P_7G27LS-150P
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Product data sheet
Rev. 2 — 12 July 2013
© NXP B.V. 2013. All rights reserved.
9 of 14
BLF7G27L-150P; BLF7G27LS-150P
NXP Semiconductors
Power LDMOS transistor
Earless flanged balanced ceramic package; 4 leads
SOT539B
D
A
F
5
D1
D
U1
H1
w2
1
c
D
2
E1
U2
H
E
L
3
4
w3
b
Q
e
0
5
10 mm
scale
Dimensions
Unit(1)
w2
w3
0.25
0.25
max 0.185 0.465 0.007 1.242 1.241 0.374 0.375
0.069 0.674 1.005 0.137 0.089 1.275 0.405
0.54
inches nom
0.01
min 0.165 0.455 0.004 1.218 1.219 0.366 0.365
0.059 0.634 0.995 0.117 0.079 1.265 0.395
0.01
mm
max
nom
min
A
b
E
E1
4.7
11.81
0.18 31.55 31.52
c
D
D1
9.5
9.53
e
4.2
11.56
0.10 30.94 30.96
9.3
9.27
F
H
H1
L
Q
U1
U2
1.75 17.12 25.53 3.48
2.26 32.39 10.29
1.50 16.10 25.27 2.97
2.01 32.13 10.03
13.72
Note
1. millimeter dimensions are derived from the original inch dimensions.
Outline
version
References
IEC
JEDEC
JEITA
sot539b_po
European
projection
Issue date
12-05-02
13-05-24
SOT539B
Fig 16. Package outline SOT539B
BLF7G27L-150P_7G27LS-150P
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Product data sheet
Rev. 2 — 12 July 2013
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BLF7G27L-150P; BLF7G27LS-150P
NXP Semiconductors
Power LDMOS transistor
9. Abbreviations
Table 8.
Abbreviations
Acronym
Description
CCDF
Complementary Cumulative Distribution Function
CW
Continuous Wave
IS-95
Interim Standard 95
ESD
ElectroStatic Discharge
LDMOS
Laterally Diffused Metal Oxide Semiconductor
LDMOST
Laterally Diffused Metal Oxide Semiconductor Transistor
N-CDMA
Narrowband Code Division Multiple Access
PAR
Peak-to-Average power Ratio
RF
Radio Frequency
VSWR
Voltage Standing Wave Ratio
W-CDMA
Wideband Code Division Multiple Access
10. Revision history
Table 9.
Revision history
Document ID
Release
date
Data sheet status Change notice Supersedes
BLF7G27L-150P_7G27LS-150P v.2 20130712 Product data sheet Modifications:
•
•
BLF7G27L-150P_7G27LS-150P v.1
The package outline Figure 16 is updated.
Translation disclaimer added to the legal text.
BLF7G27L-150P_7G27LS-150P v.1 20101112 Product data sheet -
BLF7G27L-150P_7G27LS-150P
All information provided in this document is subject to legal disclaimers.
Product data sheet
Rev. 2 — 12 July 2013
-
© NXP B.V. 2013. All rights reserved.
11 of 14
NXP Semiconductors
BLF7G27L-150P; BLF7G27LS-150P
Power LDMOS transistor
11. Legal information
11.1
Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
11.2
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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BLF7G27L-150P_7G27LS-150P
All information provided in this document is subject to legal disclaimers.
Product data sheet
Rev. 2 — 12 July 2013
© NXP B.V. 2013. All rights reserved.
12 of 14
NXP Semiconductors
BLF7G27L-150P; BLF7G27LS-150P
Power LDMOS transistor
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
11.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BLF7G27L-150P_7G27LS-150P
All information provided in this document is subject to legal disclaimers.
Product data sheet
Rev. 2 — 12 July 2013
© NXP B.V. 2013. All rights reserved.
13 of 14
NXP Semiconductors
BLF7G27L-150P; BLF7G27LS-150P
Power LDMOS transistor
13. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
7.1
7.2
7.3
7.4
8
9
10
11
11.1
11.2
11.3
11.4
12
13
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation . . . . . . . . . 3
Single carrier IS-95 . . . . . . . . . . . . . . . . . . . . . . 4
Pulsed CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Single carrier W-CDMA . . . . . . . . . . . . . . . . . . 7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Contact information. . . . . . . . . . . . . . . . . . . . . 13
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2013.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 12 July 2013
Document identifier: BLF7G27L-150P_7G27LS-150P
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