PHILIPS BLS2731-110 Microwave power transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BLS2731-110
Microwave power transistor
Product specification
Supersedes data of 1997 Nov 05
1998 Jan 30
Philips Semiconductors
Product specification
Microwave power transistor
BLS2731-110
PINNING - SOT423A
FEATURES
• Suitable for short and medium pulse applications
PIN
• Internal input and output matching networks for an easy
circuit design
• Emitter ballasting resistors improve ruggedness
• Gold metallization ensures excellent reliability
DESCRIPTION
1
collector
2
emitter
3
base; connected to flange
• Interdigitated emitter-base structure provides high
emitter efficiency
• Multicell geometry improves power sharing and reduces
thermal resistance.
1
dbook, halfpage
APPLICATIONS
• Common base class-C pulsed power amplifiers for radar
applications in the 2.7 to 3.1 GHz band.
3
3
2
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a 2-lead rectangular flange package with a ceramic cap
(SOT423A) with the common base connected to the
flange.
MBK052
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common base class-C test circuit.
MODE OF OPERATION
Pulsed class-C
f
(GHz)
VCB
(V)
PL
(W)
Gp
(dB)
ηC
(%)
2.7 to 3.1
40
>110
>7
>35
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1998 Jan 30
2
Philips Semiconductors
Product specification
Microwave power transistor
BLS2731-110
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
75
V
VCES
collector-emitter voltage
RBE = 0
−
75
V
VEBO
emitter-base voltage
open collector
−
2
V
ICM
peak collector current
tp ≤ 100 µs; δ ≤ 10%
−
12
A
Ptot
total power dissipation
tp = 100 µs; δ = 10%; Tmb = 25 °C
−
500
W
Tstg
storage temperature
−65
+200
°C
Tj
operating junction temperature
−
200
°C
Tsld
soldering temperature
−
235
°C
up to 0.2 mm from ceramic cap; t ≤ 10 s
THERMAL CHARACTERISTICS
SYMBOL
Zth j-h
PARAMETER
CONDITIONS
thermal impedance from junction to heatsink
VALUE
tp = 100 µs; δ = 10%; note 1
0.24
UNIT
K/W
Note
1. Equivalent thermal impedance under pulsed microwave operating conditions.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V(BR)CBO
collector-base breakdown voltage
IC = 30 mA; open emitter
75
−
V
V(BR)CES
collector-emitter breakdown voltage
IC = 30 mA; VBE = 0
75
−
V
ICBO
collector leakage current
VCB = 40 V; IE = 0
−
3
mA
ICES
collector leakage current
VCE = 40 V; VBE = 0
−
6
mA
IEBO
emitter leakage current
VEB = 1.5 V; IC = 0
−
0.6
mA
hFE
DC current gain
VCE = 5 V; IC = 3 A
40
100
APPLICATION INFORMATION
RF performance at Th = 25 °C in a common base test circuit.
MODE OF OPERATION
Class-C; tp = 100 µs; δ = 10%
1998 Jan 30
f
(GHz)
VCE
(V)
PL
(W)
GP
(dB)
ηC
(%)
2.7 to 3.1
40
≥110
≥7
≥35
2.7 to 2.9
40
typ. 130
typ. 8
typ. 42
2.9 to 3.1
40
typ. 120
typ. 7.5
typ. 40
3
Philips Semiconductors
Product specification
Microwave power transistor
BLS2731-110
MBK284
10
handbook, halfpage
Gp
(dB)
8
ηC
50
ηC
MBK285
140
PL halfpage
handbook,
2.7
(W)
120
(%)
3.1
2.9 GHz
40
Gp
100
6
30
4
20
80
60
40
10
2
20
0
2.7
2.8
2.9
3
f (GHz)
0
3.1
0
10
VCE = 40 V; class-C; tp = 100 µs; δ = 10%.
Fig.2
12
14
18
16
PD (W)
20
VCE = 40 V; class-C; tp = 100 µs; δ = 10%.
Power gain and efficiency as functions of
frequency; typical values.
Fig.3
MGM538
Load power as a function of drive power;
typical values.
MGM539
8
12
handbook, halfpage
handbook, halfpage
ZL
(Ω)
xi
Zi
RL
(Ω)
4
8
0
ri
4
−4
0
2.6
2.8
3
f (GHz)
−8
2.6
3.2
VCB = 40 V; class-C; PL = 110 W.
Fig.4
2.8
3
f (GHz)
3.2
VCB = 40 V; class-C; PL = 110 W.
Input impedance as function of frequency
(series components); typical values.
1998 Jan 30
XL
Fig.5
4
Load impedance as function of frequency
(series components); typical values.
Philips Semiconductors
Product specification
Microwave power transistor
BLS2731-110
30
handbook, full pagewidth
30
40
L8
C3
L11
L2
RC
C2
L6
L7
L1
L4
L10
L9
L3
C1
input
output
L13
L14
L5
L12
MGM540
Dimensions in mm.
The components are located on one side of the copper-clad printed-circuit board, the other side is unetched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by through metallization.
Fig.6 Component layout for 2.7 to 3.1 GHz class-C test circuit.
1998 Jan 30
5
Philips Semiconductors
Product specification
Microwave power transistor
BLS2731-110
List of components
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
C1, C2
multilayer ceramic chip
capacitor; note 1
100 pF
C3
multilayer ceramic chip
capacitor
100 nF
RC
multilayer ceramic chip
capacitor in series with SMD
resistor
100 nF + 5 Ω
L1
stripline; note 2
length 4.5 mm
width 10 mm
L2
stripline; note 2
length 2.5 mm
width 16.4 mm
L3
stripline; note 2
length 8.3 mm
width 1 mm
L4
stripline; note 2
length 8 mm
width 1.5 mm
L5
stripline; note 2
length 2 mm
width 8.9 mm
L6
stripline; note 2
length 12.7 mm
width 1.2 mm
L7
stripline; note 2
length 4.5 mm
width 10 mm
L8
stripline; note 2
length 2.5 mm
width 24.4 mm
L9
stripline; note 2
length 4.4 mm
width 1 mm
L10
stripline; note 2
length 5.2 mm
width 1 mm
L11
stripline; note 2
length 9.3 mm
width 1 mm
L12
stripline; note 2
length 2.5 mm
width 6 mm
L13
stripline; note 2
length 7.8 mm
width 1.2 mm
L14
stripline; note 2
length 7.5 mm
width 1.2 mm
CATALOGUE No.
Notes
1. American Technical Ceramics type 100A or capacitor of same quality.
2. The striplines are on double-clad printed-circuit board with Duroid dielectric (εr = 2.2); thickness = 0.38 mm.
1998 Jan 30
6
Philips Semiconductors
Product specification
Microwave power transistor
BLS2731-110
PACKAGE OUTLINE
Flanged hermetic ceramic package; 2 mounting holes; 2 leads
SOT423A
U1
D
A
F
3
D1
q
c
1
H
p
U2
E1
E
2
b
Q
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
c
D
D1
E
E1
F
H
p
Q
q
U1
U2
mm
5.58
5.04
9.53
9.27
0.16
0.10
12.02
11.76
12.83
12.57
8.82
8.56
10.29
10.03
1.58
1.46
19.18
18.92
3.43
3.17
3.42
2.88
16.64
16.38
22.99
22.73
9.91
9.65
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
SOT423A
1998 Jan 30
EUROPEAN
PROJECTION
ISSUE DATE
97-04-01
7
Philips Semiconductors
Product specification
Microwave power transistor
BLS2731-110
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Jan 30
8
Philips Semiconductors
Product specification
Microwave power transistor
BLS2731-110
NOTES
1998 Jan 30
9
Philips Semiconductors
Product specification
Microwave power transistor
BLS2731-110
NOTES
1998 Jan 30
10
Philips Semiconductors
Product specification
Microwave power transistor
BLS2731-110
NOTES
1998 Jan 30
11
Philips Semiconductors – a worldwide company
Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,
Tel. +61 2 9805 4455, Fax. +61 2 9805 4466
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010,
Fax. +43 160 101 1210
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773
Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 689 211, Fax. +359 2 689 102
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Colombia: see South America
Czech Republic: see Austria
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,
Tel. +45 32 88 2636, Fax. +45 31 57 0044
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615800, Fax. +358 9 61580920
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 23 53 60, Fax. +49 40 23 536 300
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,
Tel. +30 1 4894 339/239, Fax. +30 1 4814 240
Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Indonesia: see Singapore
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,
Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 3 301 6312, Fax. +34 3 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 632 2000, Fax. +46 8 632 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2686, Fax. +41 1 488 3263
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
© Philips Electronics N.V. 1998
SCA57
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125108/00/04/pp12
Date of release: 1998 Jan 30
Document order number:
9397 750 03234
Similar pages