NEC BP1A3M On-chip resistor pnp silicon epitaxial transistor for mid-speed switching Datasheet

DATA SHEET
COMPOUND TRANSISTOR
BP1 SERIES
on-chip resistor PNP silicon epitaxial transistor
For mid-speed switching
The BP1 Series is an N type small signal transistor and enables the reduction of component counts and downsizing
of sets due to on-chip resistors. This transistor is especially ideal for use in household electronic appliances and OA
equipments such as VCRs and TVs.
PACKAGE DRAWING (UNIT: mm)
FEATURES
• Up to 0.7 A current drive available
• On-chip bias resistor
• Low power consumption during drive
QUALITY GRADES
• Standard
Please refer to “Quality Grades on NEC Semiconductor
Devices” (Document No. C11531E) published by NEC Corporation
to know the specification of quality grade on the devices and its
recommended applications.
BP1 SERIES LISTS
Products
R1 (KΩ)
R2 (KΩ)
BP1A4A
−
10
BP1L2Q
0.47
4.7
BP1A3M
1.0
1.0
BP1F3P
2.2
10
BP1J3P
3.3
10
BP1L3N
4.7
10
BP1A4M
10
10
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D11740EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998
BP1 SERIES
ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)
Symbol
Ratings
Unit
Collector to base volgate
Parameter
VCBO
−25
V
Colletor to emitter voltage
VCEO
−25
V
Emitter to base voltage
VEBO
−10
V
Collector current (DC)
IC(DC)
−0.7
A
Collector current (Pulse)
Base current (DC)
Total power dissipation
−1.0
A
IB(DC)
−0.02
A
PT
250
mW
Note 1
IC(pulse)
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Note 1 PW ≤ 10 ms, duty cycle ≤ 50 %
BP1A4A
ELECTRICAL CHARACTERISTICS (Ta = 25°°C)
Parameter
Collector cutoff current
Symbol
ICBO
Conditions
MIN.
TYP.
VCB = −22 V, IE = 0
MAX.
Unit
−100
nA
DC current gain
hFE1Note 2
VCE = −2.0 V, IC = −0.1 A
200
−
DC current gain
Note 2
hFE2
VCE = −2.0 V, IC = −0.5 A
100
−
DC current gain
hFE3Note 2
VCE = −2.0 V, IC = −0.7 A
50
−
Collector saturation voltage
Note 2
VCE(sat)
IC = −0.3 A, IB = −6 mA
−0.28
VCE = −5.0 V, IC = −100 µA
−0.4
V
−0.3
V
Input resistance
R1
−
−
−
Ω
E-to-B resistance
R2
7
10
13
kΩ
MIN.
TYP.
MAX.
Unit
−100
nA
Low level input voltage
Note 2
VIL
Note 2 PW ≤ 350 µs, duty cycle ≤ 2 %
BP1L2Q
ELECTRICAL CHARACTERISTICS (Ta = 25°°C)
Parameter
Collector cutoff current
Symbol
ICBO
Conditions
VCB = −22 V, IE = 0
DC current gain
Note 2
hFE1
VCE = −2.0 V, IC = −0.1 A
150
350
−
DC current gain
hFE2Note 2
VCE = −2.0 V, IC = −0.5 A
100
300
−
DC current gain
Note 2
VCE = −2.0 V, IC = −0.7 A
50
200
−
Note 2
hFE3
Low level output voltage
VOL
VIN = −5.0 V, IC = −0.3 A
Low level input voltage
VILNote 2
VCE = −5.0 V, IC = −100 µA
Input resistance
E-to-B resistance
R1
329
R2
3.29
Note 2 PW ≤ 350 µs, duty cycle ≤ 2 %
2
−0.30
Data Sheet D11740EJ2V0DS
470
4.7
−0.4
V
−0.3
V
611
Ω
6.11
kΩ
BP1 SERIES
BP1A3M
ELECTRICAL CHARACTERISTICS (Ta = 25°°C)
Parameter
Collector cutoff current
Symbol
ICBO
Conditions
MIN.
TYP.
VCB = −22 V, IE = 0
MAX.
Unit
−100
nA
DC current gain
hFE1Note 2
VCE = −2.0 V, IC = −0.1 A
80
−
DC current gain
Note 2
VCE = −2.0 V, IC = −0.5 A
100
−
Note 2
50
hFE2
DC current gain
hFE3
VCE = −2.0 V, IC = −0.7 A
Low level output voltage
VOLNote 2
VIN = −5.0 V, IC = −0.2 A
Low level input voltage
VILNote 2
VCE = −5.0 V, IC = −100 µA
−
−0.3
−0.4
V
−0.3
V
Input resistance
R1
0.7
1.0
1.3
kΩ
E-to-B resistance
R2
0.7
1.0
1.3
kΩ
MIN.
TYP.
MAX.
Unit
−100
nA
Note 2 PW ≤ 350 µs, duty cycle ≤ 2 %
BP1F3P
ELECTRICAL CHARACTERISTICS (Ta = 25°°C)
Parameter
Collector cutoff current
Symbol
ICBO
Conditions
VCB = −22 V, IE = 0
Note 2
VCE = −2.0 V, IC = −0.1 A
200
−
DC current gain
Note 2
hFE2
VCE = −2.0 V, IC = −0.5 A
100
−
DC current gain
hFE3Note 2
VCE = −2.0 V, IC = −0.7 A
50
−
DC current gain
Low level output voltage
Low level input voltage
hFE1
Note 2
VOL
Note 2
VIL
VIN = −5.0 V, IC = −0.2 A
−0.4
VCE = −5.0 V, IC = −100 µA
−0.3
V
V
Input resistance
R1
1.54
2.2
2.86
kΩ
E-to-B resistance
R2
7
10
13
kΩ
MIN.
TYP.
MAX.
Unit
−100
nA
Note 2 PW ≤ 350 µs, duty cycle ≤ 2 %
BP1J3P
ELECTRICAL CHARACTERISTICS (Ta = 25°°C)
Parameter
Collector cutoff current
Symbol
ICBO
Conditions
VCB = −22 V, IE = 0
DC current gain
Note 2
hFE1
VCE = −2.0 V, IC = −0.1 A
200
470
−
DC current gain
hFE2Note 2
VCE = −2.0 V, IC = −0.5 A
100
300
−
DC current gain
Note 2
VCE = −2.0 V, IC = −0.7 A
50
Note 2
hFE3
Low level output voltage
VOL
VIN = −5.0 V, IC = −0.2 A
Low level input voltage
VILNote 2
VCE = −5.0 V, IC = −100 µA
−
200
−0.28
−0.4
V
−0.3
V
Input resistance
R1
2.3
3.3
4.3
kΩ
E-to-B resistance
R2
7
10
13
kΩ
Note 2 PW ≤ 350 µs, duty cycle ≤ 2 %
Data Sheet D11740EJ2V0DS
3
BP1 SERIES
BP1L3N
ELECTRICAL CHARACTERISTICS (Ta = 25°°C)
Parameter
Collector cutoff current
Symbol
ICBO
Conditions
MIN.
TYP.
VCB = −22 V, IE = 0
MAX.
Unit
−100
nA
DC current gain
hFE1Note 2
VCE = −2.0 V, IC = −0.1 A
200
−
DC current gain
Note 2
VCE = −2.0 V, IC = −0.5 A
100
−
Note 2
50
hFE2
DC current gain
hFE3
VCE = −2.0 V, IC = −0.7 A
Low level output voltage
VOLNote 2
VIN = −5.0 V, IC = −0.2 A
−0.45
Low level input voltage
VILNote 2
VCE = −5.0 V, IC = −100 µA
−0.3
V
−
V
Input resistance
R1
3.29
4.7
6.11
kΩ
E-to-B resistance
R2
7
10
13
kΩ
MIN.
TYP.
MAX.
Unit
−100
nA
Note 2 PW ≤ 350 µs, duty cycle ≤ 2 %
BP1A4M
ELECTRICAL CHARACTERISTICS (Ta = 25°°C)
Parameter
Collector cutoff current
Symbol
ICBO
Conditions
VCB = −22 V, IE = 0
Note 2
VCE = −2.0 V, IC = −0.1 A
200
−
DC current gain
Note 2
hFE2
VCE = −2.0 V, IC = −0.5 A
100
−
DC current gain
hFE3Note 2
VCE = −2.0 V, IC = −0.7 A
50
−
DC current gain
Low level output voltage
Low level input voltage
hFE1
Note 2
VOL
Note 2
VIL
VIN = −5.0 V, IC = −0.1 A
−0.4
VCE = −5.0 V, IC = −100 µA
−0.3
V
Input resistance
R1
7
10
13
kΩ
E-to-B resistance
R2
7
10
13
kΩ
Note 2 PW≤350 µs, duty cycle≤2 %
4
V
Data Sheet D11740EJ2V0DS
BP1 SERIES
TYPICAL CHARACTERISTICS (Ta = 25°°C)
Data Sheet D11740EJ2V0DS
5
BP1 SERIES
• The information in this document is current as of July, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
• NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
• While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
• NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4
Similar pages